10-FZ063BA040MF-M575L08 L28-D3-14

10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
flow BOOST 0
600 V / 41 mΩ
Features
flow 0 12mm housing
● High efficiency dual or triple booster
● Low Inductance Layout
● Ultra fast switching frequency
Schematic
Target Applications
● solar inverter
Types
● 10-FZ063BA040MF-M575L08 (triple booster)
● 10-FZ06B2A040MF01-M575L28 (dual booster)
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
32
A
272
A
50
V/ns
97
W
Boost Swich (T1*, T2, T3)
Drain to source breakdown voltage
V DS
DC drain current
ID
Tj=Tjmax
Pulsed drain current
I Dpulse
tp limited by Tjmax
MOSFET dv/dt ruggedness
dv /dt
VDS=0...480V
Tj=Tjmax
Th=80°C
Th=80°C
Power dissipation
P tot
Gate-source peak voltage
V GS
±20
V
dv /dt
15
V/ns
T jmax
150
°C
V RRM
600
V
29
A
300
A
42
W
150
°C
Reverse diode dv/dt
Maximum Junction Temperature
*not assembled in 10-FZ06B2A040MF01-M575L28
Boost Diode (D1*, D2, D3)
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
I FSM
60Hz Single Half-Sine Wave
Power dissipation
P tot
Tj=Tjmax
Maximum Junction Temperature
T jmax
Th=80°C
Th=80°C
*not assembled in 10-FZ06B2A040MF01-M575L28
copyright Vincotech
1
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
630
V
DC Link Capacitance (C1, C2)
Max.DC voltage
Tc=25°C
V MAX
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching condition
T op
-40…+(Tjmax - 25)
°C
4000
V
min 12,7
mm
9,22
mm
Insulation Properties
Insulation voltage
V is
t=2s
DC voltage
Creepage distance
Clearance
Comparative tracking index
copyright Vincotech
CTI
>200
2
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Tj
Unit
Min
Typ
Max
51,8
2,4
41
85
3
Boost Swich (T1*, T2, T3)
Static drain to source ON resistance
r DS(on)
VCE=VGE
44,4
V (GS)th
10
Gate to Source Leakage Current
I GSS
0
600
Zero Gate Voltage Drain Current
I DSS
20
0
Gate threshold voltage
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
t d(on)
tr
t d(off)
tf
Turn-on energy loss
E on
Turn-off energy loss
E off
Total gate charge
Q GE
Gate to source charge
Q GS
Gate to drain charge
Q GD
Input capacitance
C iss
Output capacitance
C oss
Rgoff=8 Ω
Rgon=8 Ω
R th(j-s)
0/10
480
0/10
480
44,4
44,4
3,6
100
5000
35
33
9
10
275
300
4
5
0,18
0,34
0,07
0,08
290
mΩ
V
nA
nA
ns
mWs
36
nC
150
6530
f=1MHz
Thermal resistance chip to heatsink
0,00296
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0
25
Tj=25°C
pF
360
Thermal grease
thickness≤50um
λ = 1 W/mK
K/W
0,72
Boost Diode (D1*, D2, D3)
Forward voltage
VF
Reverse leakage current
I rm
Peak recovery current
I RRM
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Reverse recovered energy
E rec
Peak rate of fall of recovery current
( di rf/dt )max
Thermal resistance chip to heatsink
R th(j-s)
30
0/10
Rgon=8 Ω
300
0/10
300
30
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,11
1,59
2,8
100
17,57
29,54
14
32
0,15
0,56
0,02
0,07
5321
1723
Thermal grease
thickness≤50um
λ = 1 W/mK
V
µA
A
ns
µC
mWs
A/µs
1,67
K/W
47
nF
22
Ω
*not assembled in 10-FZ06B2A040MF01-M575L28
DC Link Capacitance (C1, C2)
C value
C
Thermistor
Rated resistance
R
Deviation of R100
Δ R/R
Power dissipation
P
T=25°C
R100=1486 Ω
T=25°C
Power dissipation constant
-12
12
T=25°C
200
mW
T=25°C
2
mW/K
K
B-value
B (25/50)
Tol. ±3%
T=25°C
3950
B-value
B (25/100)
Tol. ±3%
T=25°C
3998
Vincotech NTC Reference
copyright Vincotech
%
K
B
3
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3)
*not assembled in 10-FZ06B2A040MF01-M575L28
Figure 1
Typical output characteristics
I D = f(V DS)
Boost Swich (T1*, T2, T3)
Figure 2
Typical output characteristics
I D = f(V DS)
70
ID (A)
ID (A)
70
Boost Swich (T1*, T2, T3)
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
At
tp =
Tj =
V GS from
1
2
3
4
V DS (V)
5
0
At
tp =
Tj =
V GS from
250
µs
25
°C
3 V to 13 V in steps of 1 V
Figure 3
Typical transfer characteristics
1
Boost Swich (T1*, T2, T3)
2
3
4
V DS (V)
5
6
250
µs
125
°C
3 V to 13 V in steps of 1 V
Figure 4
Boost Diode (D1*, D2, D3)
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I D = f(V GS)
100
ID (A)
IF (A)
20
16
80
12
60
8
40
Tj = Tjmax-25°C
Tj = Tjmax-25°C
20
4
Tj = 25°C
Tj = 25°C
0
0
0
At
tp =
V DS =
1
250
10
copyright Vincotech
2
3
4
V GS (V)
0,0
5
At
tp =
µs
V
4
0,5
250
1,0
1,5
2,0
2,5
3,0
V F (V) 3,5
µs
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3)
*not assembled in 10-FZ06B2A040MF01-M575L28
Figure 5
Typical switching energy losses
as a function of drain current
E = f(I D)
Boost Swich (T1*, T2, T3)
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R G)
E (mWs)
E (mWs)
0,6
Eon
Boost Swich (T1*, T2, T3)
0,6
0,5
0,5
0,4
0,4
Eon
Eon
Eon
Eoff
0,3
0,3
Eoff
Eoff
0,2
0,2
Eoff
0,1
0,1
0,0
0,0
0
5
10
15
20
25
I D (A)
0
30
10
20
R G ( Ω ) 40
30
With an inductive load at
25/125
Tj =
25/125
°C
V DS =
400
V
V GS =
±15
V
R gon =
8,01
Ω
R goff =
8
Ω
With an inductive load at
25/125
Tj =
25/125
°C
V DS =
400
V
V GS =
±15
V
ID =
15
A
Figure 7
Boost Swich (T1*, T2, T3)
Typical reverse recovery energy loss
as a function of drain current
E rec = f(I D)
Figure 8
Boost Swich (T1*, T2, T3)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,12
E (mWs)
E (mWs)
0,12
Erec
0,10
0,10
0,08
0,08
Tj = Tjmax -25°C
0,06
0,06
0,04
0,04
Tj = Tjmax - 25°C
Erec
0,02
Erec
0,02
Tj = 25°C
Tj = 25°C
Erec
0,00
0,00
0
5
10
15
20
25
I D (A)
0
30
With an inductive load at
25/125
Tj =
25/125
°C
V DS =
400
V
V GS =
±15
V
R gon =
8,01
Ω
R goff =
8
Ω
copyright Vincotech
10
20
30
R G ( Ω ) 40
With an inductive load at
25/125
Tj =
25/125
°C
V DS =
400
V
V GS =
±15
V
ID =
15
A
5
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3)
*not assembled in 10-FZ06B2A040MF01-M575L28
Figure 9
Typical switching times as a
as a function of drain current
t = f(I D)
Boost Swich (T1*, T2, T3)
Figure 10
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
tdoff
t ( µs)
t ( µs)
1,00
Boost Swich (T1*, T2, T3)
tdoff
0,10
0,10
tdon
tdon
tr
tf
tr
0,01
0,01
tf
0,00
0,00
0
5
10
15
20
25
I D (A)
30
0
5
10
15
20
25
30 R G ( Ω ) 35
With an inductive load at
Tj =
125
°C
V DS =
400
V
V GS =
±15
V
R gon =
8,01
Ω
R goff =
8
Ω
With an inductive load at
Tj =
125
°C
V DS =
400
V
V GS =
±15
V
IC =
15
A
Figure 11
Boost Diode (D1*, D2, D3)
Typical reverse recovery time as a
as a function of drain current
t rr = f(I c)
Figure 12
Boost Diode (D1*, D2, D3)
Typical reverse recovery time as a
function of MOSFET turn on gate resistor
t rr = f(R gon)
0,04
trr
t rr( µs)
t rr( µs)
0,08
trr
0,035
0,06
0,03
Tj = Tjmax-25°C
0,025
0,04
0,02
trr
0,015
0,02
0,01
trr
Tj = 25°C
0,005
0,00
0
0
0
At
Tj =
V CE =
V GE =
R gon =
5
25/125
25/125
400
±15
8,01
copyright Vincotech
10
15
20
25
I D (A)
5
10
30
At
Tj =
VR=
IF=
V GS =
°C
V
V
Ω
6
25/125
25/125
400
15
±15
15
20
25
30
35
R gon ( Ω )
°C
V
A
V
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3)
*not assembled in 10-FZ06B2A040MF01-M575L28
Figure 13
Boost Diode (D1*, D2, D3)
Typical reverse recovery charge as a
as a function of drain current
Q rr = f(I D)
Figure 14
Boost Diode (D1*, D2, D3)
Typical reverse recovery charge as a
function of MOSFET turn on gate resistor
Q rr = f(R gon)
Qrr ( µC)
0,8
Qrr ( µC)
0,8
Qrr
0,7
0,7
0,6
0,6
Tj = Tjmax - 25°C
0,5
0,5
Qrr
Tj = Tjmax - 25°C
0,4
0,4
0,3
0,3
Qrr
0,2
0,2
Tj = 25°C
Tj = 25°C
0,1
0,1
0,0
0,0
Qrr
0
At
At
Tj =
V CE =
V GE =
R gon =
5
25/125
25/125
400
±15
8,01
10
15
20
25
I D (A)
0
30
At
Tj =
°C
V
V
Ω
25/125
25/125
400
15
±15
VR=
IF=
V GS =
Figure 15
Boost Diode (D1*, D2, D3)
Typical reverse recovery current as a
function of drain current
I RRM = f(I D)
5
10
15
20
25
30 R gon ( Ω) 35
°C
V
A
V
Figure 16
Boost Diode (D1*, D2, D3)
Typical reverse recovery current as a
function of MOSFET turn on gate resistor
I RRM = f(R gon)
IrrM (A)
IrrM (A)
60
60
50
50
40
40
IRRM
Tj = Tjmax - 25°C
30
30
Tj = Tjmax -25°C
IRRM
20
20
Tj = 25°C
Tj = 25°C
IRRM
10
10
IRRM
0
0
0
0
At
Tj =
V CE =
V GE =
R (K/W)
5
25/125
25/125
400
±15
8,01
copyright Vincotech
10
15
20
25
I C (A)
5
10
30
At
Tj =
VR=
IF=
°C
V
V
Ω
R (K/W)
7
25/125
25/125
400
15
±15
15
20
25
30
R gon ( Ω )
35
°C
V
A
V
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3)
*not assembled in 10-FZ06B2A040MF01-M575L28
Figure 17
Boost Diode (D1*, D2, D3)
Typical rate of fall of forward
and reverse recovery current as a
function of drain current
dI 0/dt ,dI rec/dt = f(I D)
Figure 18
Boost Diode (D1*, D2, D3)
Typical rate of fall of forward
and reverse recovery current as a
function of MOSFET turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
10000
dI0/dt
direc / dt (A/ µs)
direc / dt (A/ µs)
10000
dIrec/dt
8000
dI0/dt
dIrec/dt
8000
6000
6000
4000
4000
2000
2000
0
0
0
At
Tj =
V DS =
V GS =
R gon =
5
25/125
25/125
400
±15
8
10
15
20
I C (A)
25
0
30
At
Tj =
VR=
IF =
V GS =
°C
V
V
Ω
Figure 19
Boost Swich (T1*, T2, T3)
MOSFET transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
5
25/125
25/125
400
15
±15
10
15
20
25
30
R gon ( Ω)
35
°C
V
A
V
Figure 20
Boost Diode (D1*, D2, D3)
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
ZthJH (K/W)
ZthJH (K/W)
101
100
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10-2
10-2
10
-5
At
D =
R thJH =
10
-4
10
-3
10
-2
10
-1
10
0
t p (s)
10-5
1
10 10
At
D =
R thJH =
tp/T
0,72
K/W
10-4
10-3
1,67
FWD thermal model values
Thermal grease
R (K/W)
0,02
0,11
0,35
0,16
0,05
0,03
R (C/W)
0,000
0,000
0,000
0,000
0,000
0,000
R (K/W)
0,06
0,24
0,84
0,32
0,17
0,05
copyright Vincotech
8,77E+00
1,31E+00
2,19E-01
6,50E-02
1,06E-02
7,41E-04
8
t p (s)
100
10110
K/W
Phase change interface
Tau (s)
0,00E+00
0,00E+00
0,00E+00
0,00E+00
0,00E+00
0,00E+00
10-1
tp/T
IGBT thermal model values
Thermal grease
Tau (s)
10-2
Tau (s)
Phase change interface
R (C/W)
Tau (s)
3,60E+00
4,21E-01
8,48E-02
1,50E-02
1,83E-03
2,72E-04
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3)
*not assembled in 10-FZ06B2A040MF01-M575L28
Figure 21
Boost Swich (T1*, T2, T3)
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Figure 22
Boost Swich (T1*, T2, T3)
Collector/Drain current as a
function of heatsink temperature
I D = f(T h)
50
Ptot (W)
ID (A)
240
200
40
160
30
120
20
80
10
40
0
0
0
At
Tj =
30
150
60
90
120
T h ( o C)
150
0
At
Tj =
V GS =
ºC
Figure 23
Boost Diode (D1*, D2, D3)
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
30
150
10
60
90
120
T h ( o C)
150
ºC
V
Figure 24
Boost Diode (D1*, D2, D3)
Forward current as a
function of heatsink temperature
I F = f(T h)
50
IF (A)
Ptot (W)
100
80
40
60
30
40
20
20
10
0
0
0
At
Tj =
30
150
copyright Vincotech
60
90
120
T h ( o C) 150
0
At
Tj =
ºC
9
30
150
60
90
120
T h ( o C)
150
ºC
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3)
*not assembled in 10-FZ06B2A040MF01-M575L28
Figure 25
Boost Swich (T1*, T2, T3)
Safe operating area as a function
of drain-source voltage
I D = f(V DS)
Boost Swich (T1*, T2, T3)
Gate voltage vs Gate charge
V GS = f(Q g)
3
VGS (V)
8
ID (A)
10
Figure 26
10uS
7
100uS
120V
1mS
102
480V
6
10mS
100mS
DC
5
101
4
3
2
100
1
0
10-1
100
10
At
D =
10
1
2
103
V DS (V)
0
At
ID =
single pulse
80
ºC
V
±15
T jmax
ºC
Th =
V GS =
Tj =
Figure 27
Reverse bias safe operating area
50
50
100
150
200
Qg (nC) 250
A
Boost Swich (T1*, T2, T3)
I D = f(V DS)
ID (A)
100
90
ID MAX
80
70
MODULE
ID CHIP
60
ID
50
40
30
VDS MAX
20
10
0
0
100
200
300
400
500
600
700
V DS (V)
At
Tj =
R gon =
R goff =
150 °C
8Ω
8Ω
copyright Vincotech
10
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Thermistor
Figure 1
Typical NTC characteristic
as a function of temperature
R T = f(T )
Thermistor
NTC-typical temperature characteristic
R (Ω)
24000
20000
16000
12000
8000
4000
0
25
copyright Vincotech
50
75
100
T (°C)
125
11
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Switching Definitions Boost
General
Tj
R gon
R goff
conditions
= 125 °C
= 11 Ω
= 6,3 Ω
Figure 1
Boost Swich
Turn-off Switching Waveforms & definition of t doff, t Eoff
(t E off = integrating time for E off)
120
Figure 2
Boost Swich
Turn-on Switching Waveforms & definition of t don, t Eon
(t E on = integrating time for E on)
300
tdoff
%
%
IC
VDS
100
VGE 90%
250
ID
VCE 90%
80
200
60
150
VGS
40
VCE
100
tEoff
tdon
20
VGE
50
VGE10%
IC 1%
0
VCE 3%
IC10%
0
tEon
-20
-0,1
0
0,1
0,2
0,3
0,4
-50
2,95
0,5
3,03
3,11
3,19
time (us)
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t E off =
0
10
410
15
0,30
0,32
time(us)
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t E on =
V
V
V
A
µs
µs
Boost Swich
Figure 3
0
10
410
15
0,03
0,07
V
V
V
A
µs
µs
Boost Swich
Figure 4
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
140
300
Ic
%
%
120
fitted
IC
250
VCE
100
200
IC 90%
80
150
IC 60%
60
100
40
VCE
IC 40%
tr
IC90%
50
20
IC10%
IC10%
0
0
tf
-20
0,27
0,28
0,29
0,3
-50
2,98
0,31
3
3,02
3,04
V C (100%) =
I C (100%) =
tf =
copyright Vincotech
410
15
0,00
3,06
3,08
time(us)
time (us)
V C (100%) =
I C (100%) =
tr =
V
A
µs
12
410
15
0,01
V
A
µs
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Switching Definitions Boost
Boost Swich
Figure 5
Boost Swich
Figure 6
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
120
250
%
Eoff
Pon
%
100
200
80
150
Eon
60
100
40
50
20
VGE 90%
IC 1%
0
VCE 3%
VGE 10%
Poff
0
tEoff
-20
-0,1
0
tEon
0,1
0,2
0,3
-50
2,94
0,4
2,98
3,02
time (us)
P off (100%) =
E off (100%) =
t E off =
6,17
0,08
0,32
3,06
3,1
time(us)
P on (100%) =
E on (100%) =
t E on =
kW
mJ
µs
6,17
0,34
0,07
kW
mJ
µs
Boost Diode
Figure 7
Turn-off Switching Waveforms & definition of t rr
150
Id
%
100
trr
50
Vd
fitted
0
IRRM10%
-50
-100
-150
IRRM90%
IRRM100%
-200
-250
2,95
3
V d (100%) =
I d (100%) =
I RRM (100%) =
t rr =
copyright Vincotech
3,05
410
15
-30
0,03
3,1
time(us)
3,15
V
A
A
µs
13
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Switching Definitions Boost
Boost Diode
Figure 8
Boost Diode
Figure 9
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec)
125
100
Qrr
%
%
50
Erec
100
tQrr
75
Id
tErec
0
50
-50
25
0
-100
Prec
-25
-150
-50
-200
2,98
-75
3
I d (100%) =
Q rr (100%) =
t Q rr =
copyright Vincotech
3,02
15
0,56
0,06
3,04
3,06
3,08
3,1
time(us)
3,12
3
P rec (100%) =
E rec (100%) =
t E rec =
A
µC
µs
14
3,02
3,04
6,17
0,08
0,06
3,06
3,08
time(us)
3,1
kW
mJ
µs
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
without thermal paste 12mm housing (triple booster)
Version
Ordering Code
10-FZ063BA040MF-M575L08
in DataMatrix as
without thermal paste 12mm housing (dual booster)
10-FZ06B2A040MF01-M575L28
M575L08
M575L28
in packaging barcode as
M575L08
M575L28
Outline
Pin
Pin table
X
Y
1
33,3
0
2
3
30,7
23,85
0
0
4
5
6
15,95
9,6
2,6
0
0
0
7
8
9
0
0
2,6
0
22,3
22,3
10
11
5,5
13,1
22,3
22,3
12
13
14
15,9
19,4
27,7
22,3
22,3
22,3
15
16
30,7
33,3
22,3
22,3
Pinout
Identification
ID
Component
Voltage
Current
Function
T1*,T2,T3
MOSFET
600V
41mΩ
Boost Switch
D1*,D2,D3
C1,C2
NTC
FWD
Capacitor
NTC
600V
630V
30A
Boost Diode
DC Link Capacitance
Thermistor
copyright Vincotech
15
Comment
24 Jul. 2015 / Revision 3
10-FZ063BA040MF-M575L08-PM
10-FZ06B2A040MF01-M575L28-PM
datasheet
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or
situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve
reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of
said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to
persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and
determine the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
16
24 Jul. 2015 / Revision 3
Similar pages