10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet flow BOOST 0 600 V / 41 mΩ Features flow 0 12mm housing ● High efficiency dual or triple booster ● Low Inductance Layout ● Ultra fast switching frequency Schematic Target Applications ● solar inverter Types ● 10-FZ063BA040MF-M575L08 (triple booster) ● 10-FZ06B2A040MF01-M575L28 (dual booster) Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V 32 A 272 A 50 V/ns 97 W Boost Swich (T1*, T2, T3) Drain to source breakdown voltage V DS DC drain current ID Tj=Tjmax Pulsed drain current I Dpulse tp limited by Tjmax MOSFET dv/dt ruggedness dv /dt VDS=0...480V Tj=Tjmax Th=80°C Th=80°C Power dissipation P tot Gate-source peak voltage V GS ±20 V dv /dt 15 V/ns T jmax 150 °C V RRM 600 V 29 A 300 A 42 W 150 °C Reverse diode dv/dt Maximum Junction Temperature *not assembled in 10-FZ06B2A040MF01-M575L28 Boost Diode (D1*, D2, D3) Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Repetitive peak forward current I FSM 60Hz Single Half-Sine Wave Power dissipation P tot Tj=Tjmax Maximum Junction Temperature T jmax Th=80°C Th=80°C *not assembled in 10-FZ06B2A040MF01-M575L28 copyright Vincotech 1 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 630 V DC Link Capacitance (C1, C2) Max.DC voltage Tc=25°C V MAX Thermal Properties Storage temperature T stg -40…+125 °C Operation temperature under switching condition T op -40…+(Tjmax - 25) °C 4000 V min 12,7 mm 9,22 mm Insulation Properties Insulation voltage V is t=2s DC voltage Creepage distance Clearance Comparative tracking index copyright Vincotech CTI >200 2 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] or I C [A] or V GE [V] or V CE [V] or I F [A] or V GS [V] V DS [V] I D [A] Tj Unit Min Typ Max 51,8 2,4 41 85 3 Boost Swich (T1*, T2, T3) Static drain to source ON resistance r DS(on) VCE=VGE 44,4 V (GS)th 10 Gate to Source Leakage Current I GSS 0 600 Zero Gate Voltage Drain Current I DSS 20 0 Gate threshold voltage Turn On Delay Time Rise Time Turn off delay time Fall time t d(on) tr t d(off) tf Turn-on energy loss E on Turn-off energy loss E off Total gate charge Q GE Gate to source charge Q GS Gate to drain charge Q GD Input capacitance C iss Output capacitance C oss Rgoff=8 Ω Rgon=8 Ω R th(j-s) 0/10 480 0/10 480 44,4 44,4 3,6 100 5000 35 33 9 10 275 300 4 5 0,18 0,34 0,07 0,08 290 mΩ V nA nA ns mWs 36 nC 150 6530 f=1MHz Thermal resistance chip to heatsink 0,00296 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 0 25 Tj=25°C pF 360 Thermal grease thickness≤50um λ = 1 W/mK K/W 0,72 Boost Diode (D1*, D2, D3) Forward voltage VF Reverse leakage current I rm Peak recovery current I RRM Reverse recovery time t rr Reverse recovery charge Q rr Reverse recovered energy E rec Peak rate of fall of recovery current ( di rf/dt )max Thermal resistance chip to heatsink R th(j-s) 30 0/10 Rgon=8 Ω 300 0/10 300 30 30 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 2,11 1,59 2,8 100 17,57 29,54 14 32 0,15 0,56 0,02 0,07 5321 1723 Thermal grease thickness≤50um λ = 1 W/mK V µA A ns µC mWs A/µs 1,67 K/W 47 nF 22 Ω *not assembled in 10-FZ06B2A040MF01-M575L28 DC Link Capacitance (C1, C2) C value C Thermistor Rated resistance R Deviation of R100 Δ R/R Power dissipation P T=25°C R100=1486 Ω T=25°C Power dissipation constant -12 12 T=25°C 200 mW T=25°C 2 mW/K K B-value B (25/50) Tol. ±3% T=25°C 3950 B-value B (25/100) Tol. ±3% T=25°C 3998 Vincotech NTC Reference copyright Vincotech % K B 3 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3) *not assembled in 10-FZ06B2A040MF01-M575L28 Figure 1 Typical output characteristics I D = f(V DS) Boost Swich (T1*, T2, T3) Figure 2 Typical output characteristics I D = f(V DS) 70 ID (A) ID (A) 70 Boost Swich (T1*, T2, T3) 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0 At tp = Tj = V GS from 1 2 3 4 V DS (V) 5 0 At tp = Tj = V GS from 250 µs 25 °C 3 V to 13 V in steps of 1 V Figure 3 Typical transfer characteristics 1 Boost Swich (T1*, T2, T3) 2 3 4 V DS (V) 5 6 250 µs 125 °C 3 V to 13 V in steps of 1 V Figure 4 Boost Diode (D1*, D2, D3) Typical diode forward current as a function of forward voltage I F = f(V F) I D = f(V GS) 100 ID (A) IF (A) 20 16 80 12 60 8 40 Tj = Tjmax-25°C Tj = Tjmax-25°C 20 4 Tj = 25°C Tj = 25°C 0 0 0 At tp = V DS = 1 250 10 copyright Vincotech 2 3 4 V GS (V) 0,0 5 At tp = µs V 4 0,5 250 1,0 1,5 2,0 2,5 3,0 V F (V) 3,5 µs 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3) *not assembled in 10-FZ06B2A040MF01-M575L28 Figure 5 Typical switching energy losses as a function of drain current E = f(I D) Boost Swich (T1*, T2, T3) Figure 6 Typical switching energy losses as a function of gate resistor E = f(R G) E (mWs) E (mWs) 0,6 Eon Boost Swich (T1*, T2, T3) 0,6 0,5 0,5 0,4 0,4 Eon Eon Eon Eoff 0,3 0,3 Eoff Eoff 0,2 0,2 Eoff 0,1 0,1 0,0 0,0 0 5 10 15 20 25 I D (A) 0 30 10 20 R G ( Ω ) 40 30 With an inductive load at 25/125 Tj = 25/125 °C V DS = 400 V V GS = ±15 V R gon = 8,01 Ω R goff = 8 Ω With an inductive load at 25/125 Tj = 25/125 °C V DS = 400 V V GS = ±15 V ID = 15 A Figure 7 Boost Swich (T1*, T2, T3) Typical reverse recovery energy loss as a function of drain current E rec = f(I D) Figure 8 Boost Swich (T1*, T2, T3) Typical reverse recovery energy loss as a function of gate resistor E rec = f(R G) 0,12 E (mWs) E (mWs) 0,12 Erec 0,10 0,10 0,08 0,08 Tj = Tjmax -25°C 0,06 0,06 0,04 0,04 Tj = Tjmax - 25°C Erec 0,02 Erec 0,02 Tj = 25°C Tj = 25°C Erec 0,00 0,00 0 5 10 15 20 25 I D (A) 0 30 With an inductive load at 25/125 Tj = 25/125 °C V DS = 400 V V GS = ±15 V R gon = 8,01 Ω R goff = 8 Ω copyright Vincotech 10 20 30 R G ( Ω ) 40 With an inductive load at 25/125 Tj = 25/125 °C V DS = 400 V V GS = ±15 V ID = 15 A 5 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3) *not assembled in 10-FZ06B2A040MF01-M575L28 Figure 9 Typical switching times as a as a function of drain current t = f(I D) Boost Swich (T1*, T2, T3) Figure 10 Typical switching times as a function of gate resistor t = f(R G) 1,00 tdoff t ( µs) t ( µs) 1,00 Boost Swich (T1*, T2, T3) tdoff 0,10 0,10 tdon tdon tr tf tr 0,01 0,01 tf 0,00 0,00 0 5 10 15 20 25 I D (A) 30 0 5 10 15 20 25 30 R G ( Ω ) 35 With an inductive load at Tj = 125 °C V DS = 400 V V GS = ±15 V R gon = 8,01 Ω R goff = 8 Ω With an inductive load at Tj = 125 °C V DS = 400 V V GS = ±15 V IC = 15 A Figure 11 Boost Diode (D1*, D2, D3) Typical reverse recovery time as a as a function of drain current t rr = f(I c) Figure 12 Boost Diode (D1*, D2, D3) Typical reverse recovery time as a function of MOSFET turn on gate resistor t rr = f(R gon) 0,04 trr t rr( µs) t rr( µs) 0,08 trr 0,035 0,06 0,03 Tj = Tjmax-25°C 0,025 0,04 0,02 trr 0,015 0,02 0,01 trr Tj = 25°C 0,005 0,00 0 0 0 At Tj = V CE = V GE = R gon = 5 25/125 25/125 400 ±15 8,01 copyright Vincotech 10 15 20 25 I D (A) 5 10 30 At Tj = VR= IF= V GS = °C V V Ω 6 25/125 25/125 400 15 ±15 15 20 25 30 35 R gon ( Ω ) °C V A V 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3) *not assembled in 10-FZ06B2A040MF01-M575L28 Figure 13 Boost Diode (D1*, D2, D3) Typical reverse recovery charge as a as a function of drain current Q rr = f(I D) Figure 14 Boost Diode (D1*, D2, D3) Typical reverse recovery charge as a function of MOSFET turn on gate resistor Q rr = f(R gon) Qrr ( µC) 0,8 Qrr ( µC) 0,8 Qrr 0,7 0,7 0,6 0,6 Tj = Tjmax - 25°C 0,5 0,5 Qrr Tj = Tjmax - 25°C 0,4 0,4 0,3 0,3 Qrr 0,2 0,2 Tj = 25°C Tj = 25°C 0,1 0,1 0,0 0,0 Qrr 0 At At Tj = V CE = V GE = R gon = 5 25/125 25/125 400 ±15 8,01 10 15 20 25 I D (A) 0 30 At Tj = °C V V Ω 25/125 25/125 400 15 ±15 VR= IF= V GS = Figure 15 Boost Diode (D1*, D2, D3) Typical reverse recovery current as a function of drain current I RRM = f(I D) 5 10 15 20 25 30 R gon ( Ω) 35 °C V A V Figure 16 Boost Diode (D1*, D2, D3) Typical reverse recovery current as a function of MOSFET turn on gate resistor I RRM = f(R gon) IrrM (A) IrrM (A) 60 60 50 50 40 40 IRRM Tj = Tjmax - 25°C 30 30 Tj = Tjmax -25°C IRRM 20 20 Tj = 25°C Tj = 25°C IRRM 10 10 IRRM 0 0 0 0 At Tj = V CE = V GE = R (K/W) 5 25/125 25/125 400 ±15 8,01 copyright Vincotech 10 15 20 25 I C (A) 5 10 30 At Tj = VR= IF= °C V V Ω R (K/W) 7 25/125 25/125 400 15 ±15 15 20 25 30 R gon ( Ω ) 35 °C V A V 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3) *not assembled in 10-FZ06B2A040MF01-M575L28 Figure 17 Boost Diode (D1*, D2, D3) Typical rate of fall of forward and reverse recovery current as a function of drain current dI 0/dt ,dI rec/dt = f(I D) Figure 18 Boost Diode (D1*, D2, D3) Typical rate of fall of forward and reverse recovery current as a function of MOSFET turn on gate resistor dI 0/dt ,dI rec/dt = f(R gon) 10000 dI0/dt direc / dt (A/ µs) direc / dt (A/ µs) 10000 dIrec/dt 8000 dI0/dt dIrec/dt 8000 6000 6000 4000 4000 2000 2000 0 0 0 At Tj = V DS = V GS = R gon = 5 25/125 25/125 400 ±15 8 10 15 20 I C (A) 25 0 30 At Tj = VR= IF = V GS = °C V V Ω Figure 19 Boost Swich (T1*, T2, T3) MOSFET transient thermal impedance as a function of pulse width Z thJH = f(t p) 5 25/125 25/125 400 15 ±15 10 15 20 25 30 R gon ( Ω) 35 °C V A V Figure 20 Boost Diode (D1*, D2, D3) FWD transient thermal impedance as a function of pulse width Z thJH = f(t p) 101 ZthJH (K/W) ZthJH (K/W) 101 100 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-2 10-2 10 -5 At D = R thJH = 10 -4 10 -3 10 -2 10 -1 10 0 t p (s) 10-5 1 10 10 At D = R thJH = tp/T 0,72 K/W 10-4 10-3 1,67 FWD thermal model values Thermal grease R (K/W) 0,02 0,11 0,35 0,16 0,05 0,03 R (C/W) 0,000 0,000 0,000 0,000 0,000 0,000 R (K/W) 0,06 0,24 0,84 0,32 0,17 0,05 copyright Vincotech 8,77E+00 1,31E+00 2,19E-01 6,50E-02 1,06E-02 7,41E-04 8 t p (s) 100 10110 K/W Phase change interface Tau (s) 0,00E+00 0,00E+00 0,00E+00 0,00E+00 0,00E+00 0,00E+00 10-1 tp/T IGBT thermal model values Thermal grease Tau (s) 10-2 Tau (s) Phase change interface R (C/W) Tau (s) 3,60E+00 4,21E-01 8,48E-02 1,50E-02 1,83E-03 2,72E-04 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3) *not assembled in 10-FZ06B2A040MF01-M575L28 Figure 21 Boost Swich (T1*, T2, T3) Power dissipation as a function of heatsink temperature P tot = f(T h) Figure 22 Boost Swich (T1*, T2, T3) Collector/Drain current as a function of heatsink temperature I D = f(T h) 50 Ptot (W) ID (A) 240 200 40 160 30 120 20 80 10 40 0 0 0 At Tj = 30 150 60 90 120 T h ( o C) 150 0 At Tj = V GS = ºC Figure 23 Boost Diode (D1*, D2, D3) Power dissipation as a function of heatsink temperature P tot = f(T h) 30 150 10 60 90 120 T h ( o C) 150 ºC V Figure 24 Boost Diode (D1*, D2, D3) Forward current as a function of heatsink temperature I F = f(T h) 50 IF (A) Ptot (W) 100 80 40 60 30 40 20 20 10 0 0 0 At Tj = 30 150 copyright Vincotech 60 90 120 T h ( o C) 150 0 At Tj = ºC 9 30 150 60 90 120 T h ( o C) 150 ºC 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Boost Swich (T1*, T2, T3) / Boost Diode (D1*, D2, D3) *not assembled in 10-FZ06B2A040MF01-M575L28 Figure 25 Boost Swich (T1*, T2, T3) Safe operating area as a function of drain-source voltage I D = f(V DS) Boost Swich (T1*, T2, T3) Gate voltage vs Gate charge V GS = f(Q g) 3 VGS (V) 8 ID (A) 10 Figure 26 10uS 7 100uS 120V 1mS 102 480V 6 10mS 100mS DC 5 101 4 3 2 100 1 0 10-1 100 10 At D = 10 1 2 103 V DS (V) 0 At ID = single pulse 80 ºC V ±15 T jmax ºC Th = V GS = Tj = Figure 27 Reverse bias safe operating area 50 50 100 150 200 Qg (nC) 250 A Boost Swich (T1*, T2, T3) I D = f(V DS) ID (A) 100 90 ID MAX 80 70 MODULE ID CHIP 60 ID 50 40 30 VDS MAX 20 10 0 0 100 200 300 400 500 600 700 V DS (V) At Tj = R gon = R goff = 150 °C 8Ω 8Ω copyright Vincotech 10 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Thermistor Figure 1 Typical NTC characteristic as a function of temperature R T = f(T ) Thermistor NTC-typical temperature characteristic R (Ω) 24000 20000 16000 12000 8000 4000 0 25 copyright Vincotech 50 75 100 T (°C) 125 11 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Switching Definitions Boost General Tj R gon R goff conditions = 125 °C = 11 Ω = 6,3 Ω Figure 1 Boost Swich Turn-off Switching Waveforms & definition of t doff, t Eoff (t E off = integrating time for E off) 120 Figure 2 Boost Swich Turn-on Switching Waveforms & definition of t don, t Eon (t E on = integrating time for E on) 300 tdoff % % IC VDS 100 VGE 90% 250 ID VCE 90% 80 200 60 150 VGS 40 VCE 100 tEoff tdon 20 VGE 50 VGE10% IC 1% 0 VCE 3% IC10% 0 tEon -20 -0,1 0 0,1 0,2 0,3 0,4 -50 2,95 0,5 3,03 3,11 3,19 time (us) V GE (0%) = V GE (100%) = V C (100%) = I C (100%) = t doff = t E off = 0 10 410 15 0,30 0,32 time(us) V GE (0%) = V GE (100%) = V C (100%) = I C (100%) = t don = t E on = V V V A µs µs Boost Swich Figure 3 0 10 410 15 0,03 0,07 V V V A µs µs Boost Swich Figure 4 Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr 140 300 Ic % % 120 fitted IC 250 VCE 100 200 IC 90% 80 150 IC 60% 60 100 40 VCE IC 40% tr IC90% 50 20 IC10% IC10% 0 0 tf -20 0,27 0,28 0,29 0,3 -50 2,98 0,31 3 3,02 3,04 V C (100%) = I C (100%) = tf = copyright Vincotech 410 15 0,00 3,06 3,08 time(us) time (us) V C (100%) = I C (100%) = tr = V A µs 12 410 15 0,01 V A µs 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Switching Definitions Boost Boost Swich Figure 5 Boost Swich Figure 6 Turn-off Switching Waveforms & definition of t Eoff Turn-on Switching Waveforms & definition of t Eon 120 250 % Eoff Pon % 100 200 80 150 Eon 60 100 40 50 20 VGE 90% IC 1% 0 VCE 3% VGE 10% Poff 0 tEoff -20 -0,1 0 tEon 0,1 0,2 0,3 -50 2,94 0,4 2,98 3,02 time (us) P off (100%) = E off (100%) = t E off = 6,17 0,08 0,32 3,06 3,1 time(us) P on (100%) = E on (100%) = t E on = kW mJ µs 6,17 0,34 0,07 kW mJ µs Boost Diode Figure 7 Turn-off Switching Waveforms & definition of t rr 150 Id % 100 trr 50 Vd fitted 0 IRRM10% -50 -100 -150 IRRM90% IRRM100% -200 -250 2,95 3 V d (100%) = I d (100%) = I RRM (100%) = t rr = copyright Vincotech 3,05 410 15 -30 0,03 3,1 time(us) 3,15 V A A µs 13 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Switching Definitions Boost Boost Diode Figure 8 Boost Diode Figure 9 Turn-on Switching Waveforms & definition of t Qrr (t Q rr = integrating time for Q rr) Turn-on Switching Waveforms & definition of t Erec (t Erec= integrating time for E rec) 125 100 Qrr % % 50 Erec 100 tQrr 75 Id tErec 0 50 -50 25 0 -100 Prec -25 -150 -50 -200 2,98 -75 3 I d (100%) = Q rr (100%) = t Q rr = copyright Vincotech 3,02 15 0,56 0,06 3,04 3,06 3,08 3,1 time(us) 3,12 3 P rec (100%) = E rec (100%) = t E rec = A µC µs 14 3,02 3,04 6,17 0,08 0,06 3,06 3,08 time(us) 3,1 kW mJ µs 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking without thermal paste 12mm housing (triple booster) Version Ordering Code 10-FZ063BA040MF-M575L08 in DataMatrix as without thermal paste 12mm housing (dual booster) 10-FZ06B2A040MF01-M575L28 M575L08 M575L28 in packaging barcode as M575L08 M575L28 Outline Pin Pin table X Y 1 33,3 0 2 3 30,7 23,85 0 0 4 5 6 15,95 9,6 2,6 0 0 0 7 8 9 0 0 2,6 0 22,3 22,3 10 11 5,5 13,1 22,3 22,3 12 13 14 15,9 19,4 27,7 22,3 22,3 22,3 15 16 30,7 33,3 22,3 22,3 Pinout Identification ID Component Voltage Current Function T1*,T2,T3 MOSFET 600V 41mΩ Boost Switch D1*,D2,D3 C1,C2 NTC FWD Capacitor NTC 600V 630V 30A Boost Diode DC Link Capacitance Thermistor copyright Vincotech 15 Comment 24 Jul. 2015 / Revision 3 10-FZ063BA040MF-M575L08-PM 10-FZ06B2A040MF01-M575L28-PM datasheet DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 16 24 Jul. 2015 / Revision 3