10 FZ073BA030SM02 M575L38 D2 14

10-FZ073BA030SM02-M575L38
datasheet
flowBOOST 0
650 V / 30 A
Features
●
●
●
●
flow 0 12mm housing
High efficient triple booster
Included capacitor
Very high switching frequency
Very compact design
Schematic
Target applications
● Solar Inverter
Types
● 10-FZ073BA030SM02-M575L38
Maximum Ratings
Tj=25°C, unless otherwise specified
TParameter
j=
Condition
Symbol
Value
Unit
650
V
28
A
90
A
57
W
Boost Switch
Collector-emitter voltage
Collector current
V CES
IC
T j=T jmax
T S=80°C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j=T jmax
Gate-emitter voltage
V GES
±20
V
Maximum Junction Temperature
T jmax
175
°C
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1
T S=80°C
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Parameter
Conditions
Symbol
Value
Unit
650
V
29
A
180
A
52
W
175
°C
Value
Unit
650
V
30
A
150
A
58
W
175
°C
Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
IFRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
Conditions
Symbol
Boost Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
T j=T jmax
T h =80°C
Surge (non-repetitive) forward current
I FSM
50Hz Single Half Sine Wave
Total power dissipation
P tot
T j=T jmax
Maximum Junction Temperature
T jmax
Parameter
T h=80°C
Conditions
Value
Unit
V MAX
1000
V
T op
-55…+125
°C
Value
Unit
Symbol
DC Link Capacitor
Maximum DC voltage
Operation Temperature
Module Properties
Parameter
Conditions
Symbol
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
min 12,7
mm
9,22
mm
Isolation Properties
Isolation voltage
V isol
DC voltage
Creepage distance
Clearance
Comparative Tracking Index
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t p=2s
>200
CTI
2
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Characteristic Values
Boost Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
3,3
4
4,7
25
1,69
2,22
125
1,92
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
V GE(th)
V GE=V CE
0,0003
15
V CEsat
30
25
125
V
V
150
Collec tor-emitter c ut-off current
I CES
0
650
Gate-emitter leakage c urrent
I GES
20
0
Internal gate resistance
Input capacitance
40
125
25
120
125
none
rg
µA
nA
Ω
2100
C ies
f=1MHz
Reverse transfer capac itance
25
0
25
25
pF
7,7
C res
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
1,67
K/W
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 16 Ω
R gon = 16 Ω
t d(off)
15/0
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 0,3 µC
Q rFWD = 1,1 µC
3
400
30
25
125
25
125
25
125
25
125
25
125
25
125
22
21
6
8
158
175
3
5
0,385
0,512
0,138
0,252
ns
mWs
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
2,46
2,6
125
2,03
150
-
Static
Forward voltage
Reverse leakage c urrent
30
VF
25
665
Ir
V
10
150
-
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
1,83
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
di /dt = 4188 A/µs
15/0
di /dt = 3749 A/µs
400
30
E rec
(di rf/dt )max
25
125
25
125
25
125
25
125
25
125
28
36
17
77
0,336
1,091
0,040
0,251
6280
2364
A
ns
µC
mWs
A/µs
Boost Inverse Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
2,48
2,93
125
1,73
Static
Forward voltage
15
VF
V
150
Reverse leakage c urrent
650
Ir
25
10
150
µA
Thermal
Thermal resistance junc tion to sink
Copyright Vincotech
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
1,65
4
K/W
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
DC Link Capacitor
Parameter
Symbol
Conditions
Value
T j[°C]
Min
Typ
Unit
Max
Static
Capacitance per leg
47
C
Tolerance
-10
nF
+10
%
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
22
-12
kΩ
+12
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100) Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
5
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
90
I C (A)
I C (A)
90
75
75
60
60
45
45
30
30
15
15
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
25 °C
tp =
250
V GE=
15
V
125 °C
Tj =
125
150 °C
V GE from
7 V to 17 V in steps of 1 V
T j:
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
30
Z t h(j
h(j--s)(K/W)
I C (A)
101
25
100
20
15
0,5
10-1
10
0,2
0,1
0,05
0,02
5
0,01
0,005
0
10-2
10-4
0
0
2
4
6
8
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
tp / T
V CE =
10
V
125 °C
R th(j-s) =
1,67
T j:
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150 °C
10-1
10
101
t p (s)
102
K/W
IGBT thermal model values
R th (K/W)
6
1,80E-01
τ (s)
1,06E+00
3,72E-01
1,72E-01
6,39E-01
5,52E-02
3,20E-01
1,27E-02
1,54E-01
3,03E-03
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q G )
V G E (V)
15
130V
12,5
520V
10
7,5
5
2,5
0
0
10
20
30
40
50
60
70
80
Q G (nC)
At
30
I C=
A
Boost Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
Z th(j-s) = f(t p)
101
90
Z t h( jj--s) (K/W)
IF (A)
FWD
Transient thermal impedance as a function of pulse width
75
100
60
45
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
30
15
0
10-2
0
1
2
3
4
5
10-4
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
1032
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,83
K/W
150 °C
FWD thermal model values
Copyright Vincotech
7
R (K/W)
6,05E-02
τ (s)
3,63E+00
1,50E-01
6,48E-01
8,27E-01
7,70E-02
4,06E-01
1,51E-02
2,16E-01
3,45E-03
1,73E-01
7,36E-04
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Inverse Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
Z th(j-s) = f(t p)
50
101
Z t h( jj--s) (K/W)
IF (A)
FWD
Transient thermal impedance as a function of pulse width
40
100
30
20
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10
0
10-2
0
1
2
3
4
5
10-4
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,65
K/W
150 °C
FWD thermal model values
R (K/W)
5,16E-02
τ (s)
4,05E+00
1,04E-01
5,69E-01
7,15E-01
7,94E-02
4,04E-01
1,99E-02
2,10E-01
4,66E-03
1,69E-01
9,24E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
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8
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
1,2
1
E ( mWs)
E (mWs)
Typical swit ching energy losses as a f unction of collector current
Eon
0,75
Eon
Eon
0,9
E on
0,5
0,6
Eoff
Eo ff
E off
0,25
Eoff
0,3
0
0
0
10
20
30
40
50
60
0
I C (A)
25 °C
With an induc tive load at
400
V
V CE =
15/0
V
V GE =
R gon =
16
Ω
R goff =
16
Ω
T j:
16
32
150 °C
IC =
Figure 3.
FWD
30
R g ( Ω)
150 °C
A
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
0,6
0,3
E (mWs)
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
0,45
0,225
0,3
0,15
0,15
0,075
80
125 °C
T j:
Typical reverse recovered energy loss as a f unction of collector current
E (mWs)
64
25 °C
With an inductive load at
400
V
V CE =
15/0
V
V GE =
125 °C
48
Erec
Erec
Erec
0
0
0
10
20
With an induc tive load at
400
V
V CE =
15/0
V
V GE =
R gon =
16
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30
40
50
I C (A)
0
60
25 °C
T j:
16
32
With an inductive load at
400
V
V CE =
15/0
V
V GE =
125 °C
150 °C
Ω
IC=
9
30
48
64
r g (Ω)
80
25 °C
T j:
125 °C
150 °C
A
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(off )
td(off )
0,1
0,1
td(on)
tr
td(on)
tr
0,01
0,01
tf
tf
0,001
0,001
0
10
20
30
40
50
60
0
I C (A)
(A)
With an induc tive load at
125
°C
Tj=
400
V
V CE =
16
32
48
64
r g (Ω)
80
With an inductive load at
125
°C
Tj=
400
V
V CE =
V GE =
15/0
V
V GE =
R gon =
16
Ω
IC =
R goff =
16
Ω
Figure 7.
FWD
15/0
V
30
A
Figure 8.
FWD
Typical reverse recovery t ime as a f unction of collector current
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,12
t rr (μs)
t r r (μs)
0,16
trr
trr
0,09
0,12
0,06
0,08
0,03
0,04
trr
trr
0
0
0
10
20
30
40
50
60
0
I C (A)
At
400
V
V GE =
15/0
V
R gon =
16
Ω
V CE=
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32
48
64
80
R g on (Ω)
25 °C
T j:
16
At
V CE =
125 °C
V GE =
150 °C
IC=
10
400
V
15/0
V
30
A
25 °C
T j:
125 °C
150 °C
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a f unction of collector current
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
1,2
Q r (µC)
Q r (μ C)
2
Qr
Qr
1,5
0,9
1
0,6
0,5
0,3
Qr
Qr
0
At
0
0
10
20
30
40
50
60
0
16
32
48
64
80
R g o n (Ω)
I C (A)
V CE =
At
400
V
V GE =
15/0
V
R gon =
16
Ω
25 °C
T j:
At
VCE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
400
V
15/0
V
30
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
50
60
I R M (A)
I R M (A)
IR M
40
45
IRM
30
30
20
IRM
15
IRM
10
0
0
0
At
10
20
400
V
V GE =
15/0
V
R gon =
16
Ω
V CE =
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30
40
50
I C (A)
0
60
32
48
64
80
R g o n (Ω)
25 °C
T j:
16
At
V CE =
125 °C
V GE =
150 °C
IC=
11
400
V
15/0
V
30
A
25 °C
T j:
125 °C
150 °C
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
16000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
15000
diF / dt
dir r /dt
12000
di F / dt
di r r/ dt
12000
9000
8000
6000
4000
3000
0
0
0
10
20
30
40
50
0
60
16
32
I C (A)
V CE =
At
400
25 °C
V
V GE =
15/0
V
R gon =
16
Ω
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
400
48
64
80
R g o n (Ω)
V
15/0
V
30
A
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
70
I C MAX
I c CHIP
60
50
MODULE
40
Ic
30
V CE MAX
20
10
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
16
Ω
R goff =
16
Ω
Tj =
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12
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Definitions
General conditions
=
125 °C
=
16 Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
16 Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
125
250
tdoff
%
%
VCE
100
IC
200
VGE 90%
VCE 90%
75
150
VGE
IC
VCE
50
100
VGE
tdon
tEoff
25
50
IC 1%
VGE 10%
0
VCE 3%
IC 10%
0
tEon
-25
-0,15
-0,08
-0,01
0,06
0,13
0,2
-50
2,95
0,27
2,99
3,03
3,07
3,11
t (µs)
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
30
A
I C (100%) =
30
A
t doff =
0,175
µs
t don =
0,021
µs
t Eoff =
Figure 3.
0,216
µs
t Eon =
Figure 4.
0,118
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
125
250
fitted
%
3,15
t (µs)
%
VCE
IC
100
IC
200
IC 90%
75
150
IC 60%
VCE
50
100
IC 40%
IC 90%
tr
25
50
IC10%
0
IC 10%
0
tf
-25
0,07
0,09
0,11
0,13
0,15
0,17
-50
2,95
0,19
t ( µs)
V C (100%) =
400
2,98
3,01
3,04
V C (100%) =
400
3,1
3,13
V
I C (100%) =
30
A
I C (100%) =
30
A
tf=
0,005
µs
tr =
0,008
µs
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3,07
t (µs)
V
13
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
200
%
IC 1%
100
%
Pon
Eoff
Poff
150
75
Eon
100
50
50
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEon
tEoff
-50
-25
-0,15
-0,07
0,01
0,09
0,17
2,9
0,25
2,95
3
3,05
P off (100%) =
11,95
kW
P on (100%) =
11,95
kW
E off (100%) =
0,25
mJ
E on (100%) =
0,51
mJ
t Eoff =
0,216
µs
t Eon =
0,118
µs
Figure 7.
3,1
3,15
3,2
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
Id
100
trr
50
Vd
0
IRRM 10%
-50
fitted
-100
IRRM 90%
IRRM 100%
-150
2,9
2,95
3
3,05
3,1
3,15
3,2
t (µs)
V d (100%) =
400
V
I d (100%) =
30
A
I RRM (100%) =
-36
A
t rr =
0,077
µs
Copyright Vincotech
14
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Id
Qrr
100
Erec
100
tQrr
50
tErec
75
0
50
-50
25
-100
0
Prec
-150
2,95
3
3,05
3,1
3,15
-25
3,2
2,9
t (µs)
2,98
3,06
3,14
I d (100%) =
30
A
P rec (100%) =
11,95
kW
1,09
µC
E rec (100%) =
0,25
mJ
t Qrr =
0,152
µs
t Erec =
0,152
µs
Copyright Vincotech
3,3
t (µs)
Q rr (100%) =
125°C
3,22
25
25 ooC
C
25°C
15
125
125 ooCC
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Ordering Code
10-FZ073BA030SM02-M575L38
Text
Datamatrix
in DataMatrix as
M575L38
in packaging barcode as
M575L38
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
33,3
0
NTC1
2
30,7
0
NTC2
3
23,85
0
Boost3
4
15,95
0
Boost2
5
9,6
0
Boost1
6
2,6
0
DC+
7
0
0
DC+
8
0
22,3
DC-
9
2,6
22,3
G1
10
5,5
22,3
S1
11
12
13
13,1
15,9
19,4
22,3
22,3
22,3
DCS2
14
27,7
22,3
S3
15
30,7
22,3
16
33,3
22,3
G3
DC-
Copyright Vincotech
G2
16
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1,T2,T3
IGBT
650V
30A
Boost Switch
D10,D20,D30
FWD
650V
30A
Boost Diode
D1,D2,D3
FWD
650V
15A
Boost Inverse Diode
C1,C2
Capacitor
1000V
NTC
NTC
Copyright Vincotech
Comment
DC Link Capacitor
Thermistor
17
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
135
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ073BA030SM02-M575L38-D2-14
24 Jul. 2015
New topology name
1
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
24 Jul. 2015 / Revision 1
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