10 FY12B2A040MR L387L68 T2 14

10-FY12B2A040MR-L387L68
target datasheet
flow BOOST 1 dual SiC
1200 V / 40 mΩ
Features
flow 1 12mm housing
● High frequency SiC MOSFET
● Compact and low inductive design
Schematic
Target applications
● Solar
Types
● 10-FY12B2A040MR-L387L68
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
41
A
137
A
66
W
Boost Switch
Drain-source voltage
V DSS
Drain current
ID
T j = T jmax
Peak drain current pulsed
I DP
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-source voltage
V GSS
-4/ +22
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
T s = 80°C
T s = 80°C
1
16 Mar. 2016 / Revision 2
10-FY12B2A040MR-L387L68
target datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
27
A
100
A
60
W
175
°C
1600
V
46
A
270
A
370
A s
56
W
Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T j = T jmax
T s = 80°C
T j = T jmax
T s = 80°C
Boost Sw. Protection Diode/Bypass Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
V RRM
IF
I FSM
2
T j = T jmax
T s = 80 °C
50 Hz Single Half Sine W ave
t p = 10 ms
T j = 150 °C
2
Surge current capability
I t
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
150
°C
V MAX
1000
V
T op
-55…+125
°C
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching
condition
T jop
-40…(T jmax - 25)
°C
4000
V
min. 12,7
mm
9,41
mm
T j = T jmax
T s = 80 °C
DC Link Capacitance
Maximum DC voltage
Operation Temperature
Module Properties
Thermal Properties
Isolation Properties
Isolation voltage
V isol
DC Test Voltage
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
CTI
tp = 2 s
> 200
2
16 Mar. 2016 / Revision 2
10-FY12B2A040MR-L387L68
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj[°C]
Min
Unit
Typ
Max
25
40
50
125
60
Boost Switch
Static
Drain-sourc e on-state resistanc e
R DS(on)
Gate-source threshold voltage
V GS(th)
18
20
10
0,01
25
2,7
4,5
mΩ
5,6
Gate to Sourc e Leakage Current
I GSS
-4
0
25
-100
Gate to Sourc e Leakage Current
I GSS
+22
0
25
100
Zero Gate Voltage Drain Current
I DSS
0
1200
25
10
nA
Internal gate resistance
rg
7
Gate c harge
Qg
107
Gate to source charge
Q GS
Gate to drain charge
Q GD
41
Short-circ uit input capacitance
C iss
1337
Short-circ uit output capacitance
C oss
Reverse transfer capac itance
C rss
18
f = 1MHz
0
600
20
25
25
800
µA
Ω
22
nC
76
pF
27
Thermal
Thermal resistance junction to sink
R th(j-s)
phase-c hange
material
λ=3,4 W/mK
1,45
K/W
Boost Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
20
1200
25
1,4
150
1,8
25
1,4
400
V
µA
Thermal
Thermal resistance junction to sink
Copyright Vincotech
R th(j-s)
phase-change
material
λ = 3,4 W/mK
1,58
3
K/W
16 Mar. 2016 / Revision 2
10-FY12B2A040MR-L387L68
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj[°C]
Min
Unit
Typ
Max
1,17
1,6
Boost Sw. Protection Diode/Bypass Diode
Static
Forward voltage
VF
Reverse leakage c urrent
Ir
35
1600
25
0,8
125
1,13
25
50
145
1100
V
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
λ = 3,4 W /mK
1,25
K/W
47
nF
DC Link Capacitance
Capacitance
C
Tolerance
-10
+10
%
Thermistor
Rated resistance
25
R
Deviation of R100
ΔR/R
Power dissipation
P
R100 = 1484 Ω
100
Power dissipation constant
22
-5
kΩ
5
%
25
5
mW
25
1,5
mW/K
B-value
B(25/50)
Tol. ±1%
25
3962
K
B-value
B(25/100) Tol. ±1%
25
4000
K
Vincotech NTC Reference
Copyright Vincotech
I
4
16 Mar. 2016 / Revision 2
10-FY12B2A040MR-L387L68
target datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with solder pins
with thermal paste 12mm housing with solder pins
Ordering Code
10-FY12B2A040MR-L387L68
10-FY12B2A040MR-L387L68-/3/
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
Datamatrix
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
52,2
0
Boost2
2
49,2
0
Boost2
not assembled
34,7
0
DC+In2
not assembled
3
4
5
6
31,7
0
DC+In2
7
20,5
0
DC+In1
8
17,5
0
9
10
DC+In1
not assembled
not assembled
11
12
13
3
0
14
0
6
DC+
15
0
9
DC+
16
0
20,5
DC-
17
0
23,5
18
0
Boost1
0
Boost1
not assembled
DCnot assembled
19
8,1
28,2
20
11,1
28,2
21
E1
not assembled
22
23,55
28,2
23
28,65
28,2
24
G1
NTC1
NTC2
not assembled
25
41,1
28,2
E2
26
44,1
28,2
G2
27
not assembled
Pin table [mm]
Pin
X
Y
30
52,2
9
52,2
28
52,2
23,5
DC-
31
29
52,2
20,5
DC-
32
Copyright Vincotech
Function
DC+
6
DC+
not assembled
5
16 Mar. 2016 / Revision 2
10-FY12B2A040MR-L387L68
target datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1,T2
MOSFET
1200 V
40 mΩ
Boost Switch
D1,D2
FWD
1200 V
20 A
Boost Diode
D5,D6
FWD
1600 V
35 A
Boost Sw. Protection Diode
D3,D4
Rectifier
1600 V
35 A
C1,C2
Capacitor
1000 V
NTC
NTC
Copyright Vincotech
Comment
Bypass Diode
DC Link Capacitance
Thermistor
6
16 Mar. 2016 / Revision 2
10-FY12B2A040MR-L387L68
target datasheet
Packaging instruction
Standard pac kaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotec h.com website.
Package data
Package data for flow 1 packages see vinc otech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotec h.com website.
Document No.:
Date:
Modification:
Pages
10-FY12B2A040MR-L387L68-T2-14
16 Mar. 2016
Capacitor and NTC changed
2,4
Product status definition
Datasheet Status
Product Status
Target
Formative or In Design
Definition
This datasheet contains the design specific ations for product development. Specifications
may change in any manner without notice. The data contained is exc lusively intended for
technically trained staff.
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
7
16 Mar. 2016 / Revision 2
Similar pages