10 PY12NBB100SH04 L019L38Y T1 14

10-PY12NBB100SH04-L019L38Y
target datasheet
flow BOOST 1 symmetric
1200 V / 100 A
Features
flow 1 12mm housing
● 10kVA UPS Boost
● Fast IGBT + Fast Diode
Schematic
Target applications
● UPS
Types
● 10-PY12NBB100SH04-L019L38Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
650
V
65
A
225
A
123
W
±20
V
Positive Boost Switch
Collector-emitter voltage
Collector current
VCES
IC
Tj = Tjmax
TS =80 °C
Repetitive peak collector current
ICRM
tp limited by Tjmax
Total power dissipation
Ptot
Tj = Tjmax
Gate-emitter voltage
VGES
Short circuit ratings
Maximum Junction Temperature
Copyright Vincotech
tSC
Tj ≤ 150°C
VCC
VGE = 15V
TS =80 °C
Tjmax
1
5
µs
400
V
175
°C
02 Mar. 2016 / Revision 1
10-PY12NBB100SH04-L019L38Y
target datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
650
V
52
A
100
A
67
W
175
°C
650
V
20
A
30
A
36
W
Positive Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
VRRM
IF
Repetitive peak forward current
IFRM
Total power dissipation
Ptot
Maximum Junction Temperature
Tjmax
Tj = Tjmax
Ts = 80°C
Tj = Tjmax
Ts = 80°C
Positive Boost Protection Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
VRRM
IF
Tj = Tjmax
Ts = 80°C
Repetitive peak forward current
IFRM
Total power dissipation
Ptot
Maximum Junction Temperature
Tjmax
175
°C
VCES
1200
V
120
A
480
A
211
W
Tj = Tjmax
Ts = 80°C
Negative Boost Switch
Collector-emitter voltage
Collector current
IC
Tj = Tjmax
Ts = 80 °C
Repetitive peak collector current
ICRM
tp limited by Tjmax
Total power dissipation
Ptot
Tj = Tjmax
Gate-emitter voltage
VGES
±20
V
Maximum junction temperature
Tjmax
175
°C
VRRM
1200
V
Ts = 80 °C
Negative Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
IF
Tj = Tjmax
Ts = 80 °C
51
A
Total power dissipation
Ptot
Tj = Tjmax
Ts = 80 °C
109
W
Maximum Junction Temperature
Tjmax
175
°C
Copyright Vincotech
2
02 Mar. 2016 / Revision 1
10-PY12NBB100SH04-L019L38Y
target datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
21
A
30
A
52
W
Negative Boost Protection Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
VRRM
IF
Tj = Tjmax
Ts = 80°C
Repetitive peak forward current
IFRM
Total power dissipation
Ptot
Maximum Junction Temperature
Tjmax
175
°C
VRRM
1600
V
53
A
490
A
1200
A2s
86
W
Tj = Tjmax
Ts = 80°C
Rectifier Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
IF
Tj = Tjmax
Ts = 80°C
50 Hz Single Half Sine Wave
tp = 10 ms
Tj = 150°C
Tj = Tjmax
Ts = 80°C
IFSM
Surge current capability
I2t
Total power dissipation
Ptot
Maximum Junction Temperature
Tjmax
150
°C
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Tjop
-40…(Tjmax - 25)
°C
4000
V
Creepage distance
min. 12,7
mm
Clearance
min. 12,7
mm
Module Properties
Thermal Properties
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
Visol
DC Voltage
tp = 2 s
CTI
> 200
3
02 Mar. 2016 / Revision 1
10-PY12NBB100SH04-L019L38Y
target datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Unit
Min
Typ
Max
25
4,2
5,1
5,6
25
1,38
1,72
2,22
Positive Boost Switch
Static
Gate-emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCEsat
VGE=VCE
0,0012
15
75
125
1,91
150
1,97
V
V
Collector-emitter cut-off current
ICES
0
650
25
3,8
µA
Gate-emitter leakage current
IGES
20
0
25
150
nA
Internal gate resistance
rg
Input capacitance
Cies
none
4620
f=1 MHz
Reverse transfer capacitance
Ω
0
25
25
pF
137
Cres
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
ʎ=3,4W/mK
0,77
K/W
Positive Boost Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
50
650
25
125
150
1,35
1,32
1,28
25
1,77
V
2,65
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
ʎ=3,4W/mK
1,42
K/W
Positive Boost Protection Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
15
650
25
125
1,79
1,67
25
1,87
0,18
V
µA
Thermal
Thermal resistance junction to sink
Copyright Vincotech
Rth(j-s)
phase-change
material
ʎ = 3,4 W/mK
2,65
4
K/W
02 Mar. 2016 / Revision 1
10-PY12NBB100SH04-L019L38Y
target datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Unit
Min
Typ
Max
Negative Boost Switch
Static
Gate-emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCEsat
VGE = VCE
15
0,12
25
5
6,77
7,3
V
120
25
1,5
1,80
2,5
V
Collector-emitter cut-off current
ICES
0
1200
25
150
µA
Gate-emitter leakage current
IGES
20
0
25
750
nA
Internal gate resistance
rg
none
Input capacitance
Cies
12900
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
Qg
f = 100 KHz
0
30
25
Ω
540
pF
300
15
600
120
25
1110
nC
0,45
K/W
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
Negative Boost Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
40
1200
25
2,65
25
3,8
V
100
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
ʎ=3,4W/mK
0,87
K/W
Negative Boost Protection Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
15
1200
25
150
1,80
1,77
25
2,05
3,5
V
µA
Thermal
Thermal resistance junction to sink
Copyright Vincotech
Rth(j-s)
phase-change
material
ʎ=3,4W/mK
1,83
5
K/W
02 Mar. 2016 / Revision 1
10-PY12NBB100SH04-L019L38Y
target datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Unit
Typ
Max
1,22
1,48
1,8
Rectifier Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
50
1600
25
125
25
150
50
1100
V
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
ʎ=3,4W/mK
0,82
K/W
22
kΩ
Thermistor
Rated resistance
R
Deviation of R100
ΔR/R
Power dissipation
P
25
R100=1486 Ω
100
Power dissipation constant
-12
+14
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100)
Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
6
02 Mar. 2016 / Revision 1
10-PY12NBB100SH04-L019L38Y
target datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with Press-fit pins
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Ordering Code
10-PY12NBB100SH04-L019L38Y
Text
Datamatrix
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
43
11,6
BA T S U RD O WN
2
43
8,6
BA T S U RD O WN
3
45,3
3
-400
4
45,3
0
-400
5
28,25
0
T2
6
25,25
0
T1
7
3
0
SURDOWN
8
0
0
SURDOWN
9
0
28
SURUP
10
3
28
SURUP
11
12
13
18
28
G1
21
28
E1
45,3
27,45
+400
14
45,3
24,45
+400
15
43
18,1
GND
16
40
18,1
GND
17
6,6
19,05
E2
18
6,6
16,05
G2
Copyright Vincotech
7
02 Mar. 2016 / Revision 1
10-PY12NBB100SH04-L019L38Y
target datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1
IGBT
650 V
75 A
Positive Boost Switch
D1
FWD
650 V
50 A
Positive Boost Diode
D4
Diode
650 V
15 A
Positive Boost Protection Diode
Negative Boost Switch
T2
IGBT
1200 V
120
D3
FWD
1200 V
75 A
Negative Boost Diode
D5
Diode
1200 V
15 A
Negative Boost Protection Diode
D2
Rectifier
1600 V
50 A
Rectifier Diode
NTC
NTC
Copyright Vincotech
Comment
Thermistor
8
02 Mar. 2016 / Revision 1
10-PY12NBB100SH04-L019L38Y
target datasheet
Packaging instruction
Standard packaging quantity (SPQ)100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
10-PY12NBB100SH04-L019L38Y-T1-14
02 Mar. 2016
Modification:
Pages
Product status definition
Datasheet Status
Product Status
Target
Formative or In Design
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
9
02 Mar. 2016 / Revision 1
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