V23990-P627-F88-PM V23990-P627-F89-PM datasheet fastPack 0 H 1200 V / 15 A Features ● ● ● ● ● flow 0 housing High efficient H-bridge High-speed IGBT Ultra high switching frequency Ultra low inductive design Clip-in PCB mounting 12mm housing 17mm housing Schematic Target applications ● ● ● ● Solar SMPS UPS Welding Types ● V23990-P627-F88-PM ● V23990-P627-F89-PM Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 1200 V 22 A 45 A 71 W H-Bridge Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T s =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T s =80 °C 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet Parameter Conditions Symbol Value Unit 1200 V 16 A 65 A T j = °C 21 A s T h = 80°C 42 W 175 °C H-Bridge Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current V RRM IF I FSM 2 T h = 80°C T j = T jmax 50 Hz Single Half Sine Wave Surge current capability I t t p = 10 ms 50 Hz sine Total power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax Parameter Conditions Symbol 2 Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 9,55 / >12,7 mm Isolation Properties Isolation voltage V isol DC voltage t p=2s Creepage distance Clearance Comparative Tracking Index Copyright Vincotech 12mm housing / 17mm housing >200 CTI 2 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet Characteristic Values TParameter j= Symbol Conditions H-Bridge Switch V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 5,3 5,8 6,3 1,78 1,89 2,42 Static Gate-emitter threshold voltage V GE(th) V GE=V CE Collec tor-emitter saturation voltage V CEsat 0,0005 25 125 25 15 15 125 150 Collec tor-emitter cut-off c urrent I CES 0 1200 Gate-emitter leakage current I GES 20 0 Internal gate resistance Input capacitance 2 125 25 120 125 none µA nA Ω 875 C ies f=1 MHz Reverse transfer c apac itanc e V 2,28 25 rg V 0 25 25 pF 45 C res Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W /mK 1,35 K/W IGBT Switching Turn-on delay time t d(on) R goff = 32 Ω Rise time Turn-off delay time tr R gon = 32 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 1,1 µC Q rFWD = 2,1 µC Q rFWD = 2,6 µC 3 600 15 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 84 85 86 24 25 26 174 221 230 42 63 69 0,894 1,283 1,444 0,512 0,815 0,890 ns mWs 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet Parameter Symbol Conditions H-Bridge Diode Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,37 2,71 125 2,47 Static Forward voltage 15 VF V 150 Reverse leakage current 25 1200 Ir 60 150 1800 µA Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 2,46 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current di /dt = 615 A/µs di /dt = 691 A/µs di /dt = 576 A/µs ±15 600 15 E rec (di rf/dt )max 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 12 15 16 250 429 466 1,122 2,063 2,610 0,439 0,830 1,075 133 101 94 A ns µC mWs A/µs Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] 100 R100=1486 Ω Power dissipation constant Typ Unit Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 4 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 50 I C (A) I C (A) 50 40 40 30 30 20 20 10 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE = 15 V 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 15 Z t h( jj--s)(K/W) I C (A) 101 12 100 9 6 0,5 10-1 0,2 0,1 0,05 3 0,02 0,01 0,005 0 10-2 0 0 2 4 6 8 10 10-4 12 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= tp / T V CE = 10 V 125 °C R th(j-s) = 1,35 T j: Copyright Vincotech 150 °C 10-1 10 101 t p (s) 102 K/W IGBT thermal model values R th (K/W) 5 1,62E-01 τ (s) 5,85E-01 6,34E-01 9,42E-02 2,82E-01 2,85E-02 1,64E-01 6,73E-03 8,75E-02 9,43E-04 1,75E-02 3,79E-04 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet Gate voltage vs Gate charge IGBT V GE = f(Q G) V G E (V) 20 17,5 240V 15 960V 12,5 10 7,5 5 2,5 0 0 10 20 30 40 50 60 70 80 Q G (nC) At I C= 15 Copyright Vincotech A 6 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Diode Characteristics FWD Typical forward characteristics I F = f(V F ) Z th(j-s) = f(t p) 50 101 Z t h(j h(j--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 40 100 30 20 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 2,24 K/W 150 °C FWD thermal model values R (K/W) 7,47E-02 τ (s) 2,62E+00 1,66E-01 3,82E-01 9,90E-01 7,20E-02 4,45E-01 1,82E-02 3,36E-01 3,41E-03 2,26E-01 6,98E-04 Thermistor Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 7 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Switching Definition Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) 4 E (mWs) E ( mWs) Typical swit ching energy losses as a f unct ion of collect or current Eon 3 4 Eon 3 Eon Eon Eo n Eo n 2 2 Eoff Eoff 1 E o ff Eoff 1 Eoff Eo ff 0 0 0 5 10 15 20 25 30 0 I C (A) 25 °C With an inductive load at 600 V V CE = V GE = ±15 V R gon = 32 Ω R goff = 32 Ω T j: 20 40 60 125 °C 150 °C V GE = IC = Figure 3. FWD ±15 V 15 A 80 T j: 120 140 R g ( Ω) 125 °C 150 °C Figure 4. FWD Typical reverse recovered energy loss as a f unct ion of collect or current Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) 1,6 1,6 E ( mWs) E (mWs) 100 25 °C With an inductive load at 600 V V CE = Erec 1,2 1,2 Erec Erec 0,8 0,8 Erec Erec 0,4 0,4 Erec 0 0 0 5 10 With an inductive load at 600 V V CE = V GE = ±15 V R gon = 32 Ω Copyright Vincotech 15 20 25 I C (A) 0 30 25 °C T j: 20 40 With an inductive load at 600 V V CE = 125 °C 150 °C V GE = IC= 8 ±15 V 15 A 60 80 100 T j: 125 °C 120 140 r g (Ω) 25 °C 150 °C 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Switching Definitions Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(on) td(off ) 0,1 tr 0,1 td(on) tf tf tr 0,01 0,01 0,001 0,001 0 5 10 15 20 25 30 0 I C (A) (A) With an inductive load at 150 °C Tj= 20 40 V CE = 600 V V CE = 600 V V GE = ±15 V V GE = ±15 V IC = 15 A R gon = 32 Ω R goff = 32 Ω 60 80 100 120 140 r g (Ω) With an inductive load at 150 °C Tj = Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,8 t rr (μs) t rr (μs) 0,8 trr trr trr trr 0,6 0,6 trr 0,4 0,4 trr 0,2 0,2 0 0 0 5 10 15 20 25 30 0 I C (A) At 600 V V GE = ±15 V R gon = 32 Ω V CE= Copyright Vincotech 40 60 80 100 120 140 R g o n (Ω) 25 °C T j: 20 At V CE = 125 °C V GE = 150 °C IC= 9 600 V ±15 V 15 A 25 °C T j: 125 °C 150 °C 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Switching Definition Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unct ion of collect or current Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) Q r (µC) Q r (μC) 4 3 Qr 2,5 Qr 2 Qr 3 2 Qr 1,5 Qr 1 Qr 1 0,5 0 At 0 0 5 10 15 20 25 30 0 20 40 60 80 100 120 I C (A) 600 V V GE = ±15 V R gon = 32 Ω At V CE = 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 600 V ±15 V 15 A T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 20 140 R g on (Ω) 25 °C I R M (A) I R M (A) 50 40 IRM 15 I RM I RM 30 10 20 5 10 0 0 0 At IRM IRM IRM 5 10 600 V V GE = ±15 V R gon = 32 Ω V CE = Copyright Vincotech 15 20 25 I C (A) 0 30 40 60 80 100 120 140 R go n (Ω) 25 °C T j: 20 At V CE = 125 °C V GE = 150 °C IC= 10 600 V ±15 V 15 A 25 °C T j: 125 °C 150 °C 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Switching Definition Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 800 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current di F / dt dir r/dt 4000 di F / dt di r r/ dt 600 3000 400 2000 200 1000 0 0 0 5 10 15 20 25 0 30 20 40 I C (A) 600 V V GE = ±15 V R gon = 32 Ω At V CE = 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 600 V ±15 V 15 A 60 80 100 120 140 R g o n (Ω) IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 35 I C MAX I c CHIP 30 25 MODULE 20 Ic 15 V CE MAX 10 5 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 32 Ω R goff = 32 Ω Tj = Copyright Vincotech 11 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Switching Definition General conditions = 125 °C = 32 Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 32 Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 150 250 % % 125 200 tdoff IC VCE 100 150 VCE 90% VGE 90% 75 VCE IC VGE 100 50 tdon tEoff 50 25 VGE IC 1% VCE 3% IC 10% VGE 10% 0 0 tEon -25 -0,1 0 0,1 0,2 0,3 -50 2,28 0,4 t (µs) 2,36 2,44 2,52 2,6 2,68 V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 15 A I C (100%) = 15 A t doff = 0,221 µs t don = 0,085 µs t Eoff = Figure 3. 0,403 µs t Eon = Figure 4. 0,329 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 2,76 2,84 2,92 3 3,08 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 200 225 % % 175 200 IC 175 150 150 125 fitted IC 100 VCE 125 IC 90% VCE 100 IC 90% 75 75 IC 60% 50 IC 40% tr 50 25 tf 0 25 IC10% IC 10% 0 -25 0 0,05 0,1 0,15 0,2 0,25 0,3 -25 0,35 2,5 t (µs) 2,55 2,6 2,65 2,7 2,8 2,85 t (µs) V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 15 A I C (100%) = 15 A tf= 0,063 µs tr = 0,025 µs Copyright Vincotech 2,75 12 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Switching Definition Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 200 % % IC 1% Pon Eoff 100 150 Poff 75 Eon 100 50 50 25 VCE 3% VGE 10% VGE 90% 0 0 tEoff -25 -0,1 -0,05 0 0,05 0,1 tEon 0,15 0,2 0,25 0,3 0,35 -50 2,45 0,4 2,5 2,55 2,6 2,65 t (µs) P off (100%) = 9,05 kW P on (100%) = 9,05 kW E off (100%) = 0,82 mJ E on (100%) = 1,28 mJ t Eoff = 0,40 µs t Eon = 0,33 µs Figure 7. 2,7 2,75 2,8 t (µs) 2,85 FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 % Id 100 trr 50 Vd 0 IRRM 10% -50 -100 fitted IRRM 90% IRRM 100% -150 2,5 2,6 2,7 2,8 2,9 3 3,1 t (µs) V d (100%) = 600 V I d (100%) = 15 A I RRM (100%) = -15 A Copyright Vincotech 13 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet H-Bridge Switching Definition Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. 150 150 % FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) Id % Qrr 125 100 tQrr 50 Erec 100 75 0 tErec 50 Prec -50 25 -100 0 -150 2,45 2,55 2,65 2,75 2,85 2,95 3,05 3,15 3,25 3,35 3,45 -25 3,55 2,5 t (µs) 2,6 2,7 2,8 2,9 3 3,1 3,3 3,4 3,5 3,6 t (µs) I d (100%) = 15 A P rec (100%) = 9,05 kW Q rr (100%) = 2,06 µC E rec (100%) = 0,83 mJ t Qrr = 0,86 µs t Erec = 0,86 µs Copyright Vincotech 3,2 14 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet Ordering Code & Marking Version without thermal paste 12mm housing without thermal paste 17mm housing Vinco WWYY NNNNNNNVV UL LLLLL SSSS Ordering Code V23990-P627-F88 V23990-P627-F89 Text Datamatrix in DataMatrix as P627F88 P627F89 in packaging barcode as P627F88 P627F89 Vinco Date code Name&Ver UL Lot Serial Vinco WWYY NNNNNNNVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 0 22,5 G11 2 2,9 22,5 S11 3 8,3 22,5 DC- 4 10,8 22,5 DC- 5 19,6 22,5 DC+ 6 22,1 22,5 DC+ 7 29,1 22,5 S12 8 32 22,5 G12 9 33,5 17,8 OUT1 10 33,5 15,3 OUT1 11 33,5 7,2 OUT2 12 33,5 4,7 OUT2 13 32 0 G14 14 29,1 0 S14 15 22,1 0 DC+ 16 19,6 0 DC+ 17 10,8 0 DC- 18 8,3 0 DC- 19 2,9 0 S13 20 0 0 G13 21 0 8 22 0 14,5 Therm1 Therm2 Copyright Vincotech 15 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet Pinout Identification ID Component Voltage Current Function T11-T14 IGBT 1200V 15A H-Bridge Switch D11-D14 FWD 1200V 15A H-Bridge Diode Rt NTC - - Thermistor Copyright Vincotech 16 Comment 22 Okt. 2015 / Revision 2 V23990-P627-F88-PM V23990-P627-F89-PM datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Document No.: Date: Modification: Pages V23990-P627-F8x-D2-14 22 Okt. 2015 Module properties correction 2 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 22 Okt. 2015 / Revision 2