10 PY126PA020ME L227F18Y D1 14

10-PY126PA020ME-L227F18Y
datasheet
flow PACK 1
1200 V / 20 mΩ
Features
flow 1 12mm housing
● Wolfspeed(Cree)™ Silicon Carbide Power MOSFET,
C2M™ MOSFET Technology
● Sixpack with three separated legs
● Solderless Press-fit Mounting Technology
Schematic
Target applications
● Battery Charger
Types
● 10-PY126PA020ME-L227F18Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
53
A
320
A
4000
mJ
104
W
Inverter Switch
Drain-source voltage
V DSS
Drain current
ID
T j = T jmax
Peak drain current
I DM
t p limited by T jmax
Ts = 80 °C
I D = 80 A
Avalanche energy, single pulse
E AS
Total power dissipation
P tot
Gate-source voltage
V GSS
-10/+25
V
Maximum Junction Temperature
T jmax
150
°C
Copyright Vincotech
V DD = 50 V
T j = T jmax
1
Ts = 80 °C
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
min 12,7
mm
12,01
mm
Isolation Properties
Isolation voltage
V isol
DC voltage
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
t p=2s
>200
CTI
2
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Characteristic Values
Inverter Switch
Parameter
Symbol
Conditions
Value
V GS [V] V DS [V] I D [A] T j[ °C]
Min
Unit
Typ
Max
25
22
26
125
33
150
35
Static
Drain-sourc e on-state resistanc e
Gate-source threshold voltage
20
r DS(on)
V GS(th)
80
V GS = V DS
0,02
Gate to Sourc e Leakage Current
I GSS
20
0
Zero Gate Voltage Drain Current
I DSS
0
1200
25
2,4
2,8
25
500
125
25
2
0,9
Gate c harge
Qg
230
Gate to source charge
Q GS
Gate to drain charge
Q GD
74
Short-circ uit input capacitance
C iss
3786
Short-circ uit output capacitance
C oss
Reverse transfer capac itance
C rss
f=1MHz
0
200
125
rg
800
V
125
Internal gate resistance
-5/20
mΩ
80
1000
25
25
nA
µA
Ω
56
nC
pF
300
20
Reverse Diode Static
Diode Forward Voltage
Continuous Diode Forward Current
-5
VSD
40
25
3,3
150
3,1
T C=25°C
IS
V
120
A
Thermal
Thermal resistance junction to sink
Copyright Vincotech
R th(j-s)
phase-c hange
material λ=3,4
W/mK
0,67
3
K/W
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switch
Parameter
Symbol
Conditions
V GE [V]
Value
V r [V] I C [A] or
or
I F [A] or
V CE [V]
I D [A]
T j[ °C]
Min
Typ
Unit
Max
MOSFET Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 2 Ω
R gon = 2 Ω
t d(off)
-5/16
Fall time
600
60
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Q rFWD = 0,9 µC
Q rFWD = 1,5 µC
25
125
25
125
25
125
25
125
25
125
25
125
31
30
9
9
64
67
20
18
0,518
0,509
0,212
0,177
25
125
25
125
25
125
25
125
25
125
88
156
18
21
0,871
1,479
0,200
0,296
15261
32554
ns
mWs
Reverse Diode Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Qr
di /dt = 10171 A/µs
-5/16
di /dt = 9687 A/µs
600
60
E rec
(di rf/dt )max
A
ns
µC
mWs
A/µs
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
Value
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
4
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switch Characteristics
MOSFET
Typical output characteristics
MOSFET
Typical output characteristics
I D = f(V DS)
I D= f(V DS)
200
I D (A)
I D (A)
200
160
160
120
120
80
80
40
40
0
0
-40
0
2
4
tp =
250
µs
V GS=
20
V
6
8
T j:
VDS (V)
10
-6
-4
-2
0
2
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GS from
0 V to 20 V in steps of 2 V
MOSFET
Typical transfer characteristics
4
6
8
µs
°C
Transient thermal impedance as a function of pulse width
I D = f(V GS)
10
VDS (V)
MOSFET
Z th(j-s)= f(t p)
35
ID (A)
100
30
25
20
10-1
15
0,5
0,2
10
0,1
0,05
0,02
5
0,01
0,005
0
10-2
10-4
0
0
2
4
6
8
10
12
14
16
10-3
10-2
10-1
100
101
102
VGS (V)
tp =
100
µs
V DS =
10
V
T j:
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,67
K/W
150 °C
Copyright Vincotech
5
R (K/W)
Tau(s)
1,01E-01
1,43E+00
2,02E-01
1,77E-01
2,13E-01
6,03E-02
7,84E-02
8,37E-03
7,99E-02
1,21E-03
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switch Characteristics
MOSFET
Gate voltage vs Gate charge
VGS (V)
V GS = f(Q g)
25
20
800 V
15
10
5
0
-5
0
50
100
150
200
250
Qg (nC)
At
I C=
80
A
Thermistor
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
6
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switching Characteristics
Figure 1.
MOSFET
Figure 2.
MOSFET
Typical swit ching energy losses as a f unct ion of collect or current
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I D)
E = f(rg)
1,6
E (mWs)
E (mWs)
0,8
Eo n
Eon
0,6
Eo n
1,2
Eon
E o ff
Eoff
0,4
0,8
0,2
0,4
Eoff
Eoff
0
0
0
20
40
60
80
100
120
0
I C (A)
25 °C
With an inductive load at
600
V
V DS =
V GS =
-5/16
125 °C
T j:
1
2
3
V
V GS =
-5/16
V
ID =
60
A
R gon =
2
Ω
R goff =
2
Ω
4
Figure 3.
FWD
5
T j:
8
E rec = f(I D)
E rec = f(r g )
E ( mWs)
0,6
Erec
R g ( Ω)
9
125 °C
FWD
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E (mWs)
7
Figure 4.
Typical reverse recovered energy loss as a f unct ion of collect or current
0,5
6
25 °C
With an inductive load at
600
V
V DS =
0,4
0,3
0,4
Erec
Erec
0,2
0,3
Erec
0,2
0,1
0,1
0
0
0
20
40
With an inductive load at
600
V
V DS =
60
80
100
I D (A)
0
120
25 °C
T j:
1
2
3
With an inductive load at
600
V
V DS =
125 °C
V GS =
-5/16
V
V GS =
-5/16
V
R gon =
2
Ω
ID =
60
A
Copyright Vincotech
7
4
5
6
7
8
r g (Ω)
9
25 °C
T j:
125 °C
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switching Characteristics
Figure 5.
MOSFET
Figure 6.
MOSFET
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I D)
t = f(r g)
0,1
t ( μs)
t ( μ s)
0,1
td(off )
td(off )
td(on)
td(on)
tf
tr
tf
0,01
0,01
tr
0,001
0,001
0
20
40
60
80
100
120
0
I D (A )
With an inductive load at
125
°C
Tj=
1
2
3
V DS =
600
V
V DS =
600
V
V GS =
-5/16
V
V GS =
-5/16
V
ID =
60
A
R gon =
2
Ω
R goff =
2
Ω
4
5
6
7
8
9
r g (Ω)
With an inductive load at
125
°C
Tj =
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of MOSFET t urn on gat e resist or
t rr = f(I D)
t rr = f(R gon)
0,025
t rr (μs)
t rr (μs)
0,03
trr
trr
0,025
0,02
trr
trr
0,02
0,015
0,015
0,01
0,01
0,005
0,005
0
0
0
20
40
60
80
100
120
0
I D (A)
At
600
V
V GS =
V DS=
-5/16
V
R gon =
2
Ω
Copyright Vincotech
2
3
4
5
6
7
8
9
R g o n (Ω)
25 °C
T j:
1
At
125 °C
8
600
V
V GS =
V DS =
-5/16
V
ID =
60
A
25 °C
T j:
125 °C
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a f unct ion of collect or current
Typical recoved charge as a f unction of MOSFET turn on gat e resist or
Qr = f(I D)
Q r = f(R gon)
Q r (µC)
Q r (μC)
2,5
Qr
2
2
1,5
Qr
1,5
Qr
1
1
Qr
0,5
0,5
0
At
0
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
I D (A)
A
V DS =
600
V
V GS =
-5/16
V
R gon =
2
Ω
25 °C
T j:
At
V DS =
600
V GS =
125 °C
ID=
Figure 11.
FWD
V
-5/16
V
60
A
9
R g on (Ω)
25 °C
T j:
125 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of MOSFET turn on gat e resist or
I RM = f(I D)
I RM = f(R gon)
250
I R M (A)
I R M (A)
250
I RM
200
200
150
150
IRM
100
100
50
50
I RM
0
0
0
At
IRM
20
V DS =
40
600
V
V GS =
-5/16
V
R gon =
2
Ω
Copyright Vincotech
60
80
100
I D (A)
0
120
2
3
4
5
6
7
8
9
R go n (Ω)
25 °C
T j:
1
At
125 °C
9
V DS =
600
V
V GS =
-5/16
V
ID =
60
A
25 °C
T j:
125 °C
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of MOSFET t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
60000
di F / dt
dir r/dt
50000
di F / dt
di r r/ dt
40000
40000
30000
30000
20000
20000
10000
10000
0
0
0
20
40
60
80
100
0
120
1
2
3
4
5
6
I C (A)
At
600
V
V GS =
V DS =
-5/16
V
R gon =
2
Ω
Copyright Vincotech
25 °C
T j:
At
125 °C
V DS =
V GS =
I D=
10
600
V
25 °C
-5/16
V
125 °C
60
A
7
8
9
R g o n (Ω)
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switching Definitions
General conditions
=
125 °C
=
2Ω
Tj
R gon
=
R goff
Figure 1.
MOSFET
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
2Ω
Figure 2.
MOSFET
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
150
400
%
VDS
%
125
350
tdoff
VDS 90%
VGS 90%
75
250
VGS
50
ID
300
ID
100
200
150
tEoff
VDS
100
25
VGS
tdon
50
ID 1%
0
-25
tEon
-50
-50
0
0,02
0,04
0,06
0,08
0,1
-100
2,99
0,12
t (µs)
3,01
3,03
V GS (0%) =
-5
V
V GS (0%) =
-5
V
V GS (100%) =
16
V
V GS (100%) =
16
V
V DS (100%) =
600
V
V DS (100%) =
600
V
I D (100%) =
60
A
I D (100%) =
60
A
t doff =
0,067
µs
t don =
0,030
µs
t Eoff =
Figure 3.
0,070
µs
t E on =
Figure 4.
0,055
µs
MOSFET
Turn-of f Swit ching Wavef orms & def init ion of tf
VGS 3%
ID 10%
VGS 10%
0
3,05
3,07
t (µs)
MOSFET
Turn-on Swit ching Wavef orms & def init ion of t r
150
400
%
%
350
125
fitted
100
300
ID
ID
ID 90%
250
75
200
ID 60%
50
150
VCE
ID 40%
100
25
IC 90%
tr
ID 10%
VDS
50
0
-25
0,06
0,07
0,08
0,09
IC 10%
0
tf
0,1
-50
3,025
0,11
t (µs)
3,035
3,045
3,065
t (µs)
V C (100%) =
600
V
V C (100%) =
600
V
I D (100%) =
60
A
I D (100%) =
60
A
tf =
0,017
µs
tr =
0,009
µs
Copyright Vincotech
3,055
11
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switching Definitions
Figure 5.
MOSFET
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
MOSFET
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
125
ID 1%
%
%
Eon
100
100
Eoff
Pon
75
75
50
50
25
Poff
VDS 3%
VGS 10%
25
0
VGS 90%
0
tEon
-25
tEoff
-50
-25
0,01
0,03
0,05
0,07
0,09
3
0,11
3,01
3,02
3,03
3,04
P off (100%) =
36,02
kW
P on (100%) =
36,02
kW
E off (100%) =
0,18
mJ
E on (100%) =
0,51
mJ
t Eoff =
0,07
µs
t E on =
0,05
µs
Figure 7.
3,05
3,06
3,07
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
200
%
Id
100
trr
Vd
0
fitted
IRRM 10%
-100
-200
IRRM 90%
IRRM 100%
-300
3
3,025
3,05
3,075
3,1
3,125
3,15
t (µs)
V d (100%) =
600
V
I d (100%) =
60
A
I RRM (100%) =
-156
A
t rr =
0,021
µs
Copyright Vincotech
12
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
350
200
%
%
Prec
Id
250
100
tQrr
Qrr
150
0
tErec
Erec
50
-100
-50
-200
-150
-300
3,02
3,03
3,04
3,05
3,06
3,07
3,08
3,09
3,1
3,11
-250
3,04
3,12
t (µs)
3,05
3,06
3,07
3,08
3,1
3,11
t (µs)
I d (100%) =
60
A
P rec (100%) =
36,02
kW
Q rr (100%) =
1,48
µC
E rec (100%) =
0,30
mJ
t Q rr =
0,04
µs
t E rec =
0,04
µs
Copyright Vincotech
3,09
13
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing
with thermal paste 12mm housing
Ordering Code
10-PY126PA020ME-L227F18Y
10-PY126PA020ME-L227F18Y-/3/
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
in DataMatrix as
L227F18Y
L227F18Y
in packaging barcode as
L227F18Y
L227F18Y-/3/
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Pos
1
52,2
2,7
DC-3
2
52,2
0
DC-3
3
45,5
12
G15
4
42,5
13
S15
5
41,2
0
DC+3
6
38,5
0
DC+3
7
33,1
0
DC+2
8
30,4
0
DC+2
9
25
10
G13
10
22
11
S13
11
19,4
0
DC-2
12
16,7
0
DC-2
13
13,7
0
DC-1
14
11
0
DC-1
15
8,7
12
G11
16
5,7
13
S11
17
0
0
DC+1
18
0
2,7
DC+1
19
14,3
15,6
Therm2
20
16,1
12,6
Therm1
21
0
28,2
22
2,7
28,2
Ph1
Ph1
23
5,7
26,7
24
8,7
25,7
S12
G12
Pin
X
Y
Pos
25
19,4
28,2
Ph2
29
36,3
28,2
Ph3
26
22,1
28,2
Ph2
30
39
28,2
Ph3
27
28
23,1
26,1
25,2
24,2
S14
G14
31
32
42
45
26,7
25,7
S16
G16
Copyright Vincotech
Pin table [mm]
14
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11-T16
MOSFET
1200 V
20 mΩ
Inverter Switch
Rt
NTC
-
-
Thermistor
Copyright Vincotech
15
Comment
29 Sep. 2015 / Revision 1
10-PY126PA020ME-L227F18Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Document No.:
Date:
10-PY126PA020ME-L227F18Y-D1-14
29 Sep. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
29 Sep. 2015 / Revision 1
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