10-PY126PA020MR-L227F28Y datasheet flow PACK 1 1200 V / 20 mΩ Features flow 1 12mm housing ● Rohm Silicone Carbide Power MOSFET, Trench Technology ● Sixpack with three separated legs ● Solderless Press-fit Mounting Technology Schematic Target applications ● Battery Charger Types ● 10-PY126PA020MR-L227F28Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 58 A 274 A 123 W Inverter Switch Drain-source voltage V DSS Drain current ID T j = T jmax Peak drain current I DM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-source voltage V GSS -4/+22 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 Ts = 80 °C Ts = 80 °C 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Parameter Conditions Symbol Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 12,01 mm Isolation Properties Isolation voltage V isol DC voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 2 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Characteristic Values Inverter Switch Parameter Symbol Conditions Value V GS [V] V DS [V] I D [A] T j[ °C] Min Unit Typ Max 25 21 25 125 28 150 32 Static Drain-sourc e on-state resistanc e Gate-source threshold voltage 18 r DS(on) 40 10 V GS(th) Gate to Sourc e Leakage Current I GSS +22 0 Gate to Sourc e Leakage Current I GSS -4 0 Zero Gate Voltage Drain Current I DSS 0 1200 0,02 25 2,7 4,5 25 200 125 25 25 20 125 Gate c harge Qg 214 Gate to source charge Q GS Gate to drain charge Q GD 82 Input capacitance C iss 2674 Output capacitance C oss Reverse transfer capac itance C rss 0 nA -200 3,5 f=1MHz V 125 rg 600 5,6 125 Internal gate resistance 18 mΩ 40 800 25 25 44 152 µA Ω nC pF 54 Reverse Diode Static Forward voltage 40 Vsd 25 3,2 125 V Thermal Thermal resistance junction to sink Copyright Vincotech R th(j-s) phase-c hange material λ=3,4 W/mK 0,78 3 K/W 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switch Parameter Symbol Conditions Value Unit I C [A] or V GE [V] V r [V] or I F [A] or V CE [V] I D [A] T j[ °C] Min Typ Max MOSFET Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 2 Ω R gon = 2 Ω t d(off) -4/16 Fall time 600 60 tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Q rFWD = 2,6 µC Q rFWD = 2,3 µC 25 125 25 125 25 125 25 125 25 125 25 125 21 21 9 9 74 81 11 13 0,837 0,821 0,438 0,437 25 125 25 125 25 125 25 125 25 125 159 143 30 29 2,649 2,344 0,965 0,843 18333 16364 ns mWs Reverse Diode Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Qr di /dt = 8533 A/µs -4/16 di /dt = 9060 A/µs 600 60 E rec (di rf/dt )max A ns µC mWs A/µs Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] R100=1486 Ω 100 Power dissipation constant Typ Unit Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 4 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switch Characteristics MOSFET Typical output characteristics MOSFET Typical output characteristics I D = f(V DS) I D= f(V DS) 200 ID (A) ID (A) 200 160 160 120 120 80 80 40 40 0 0 -40 0 2 4 tp = 250 µs V GS= 18 V 6 T j: 8 VDS (V) 10 -4 -2 0 2 4 8 10 VDS (V) 25 °C tp = 250 125 °C Tj = 150 150 °C V GS from 0 V to 20 V in steps of 2 V MOSFET Typical transfer characteristics 6 µs °C Transient thermal impedance as a function of pulse width I D = f(V GS) MOSFET Z th(j-s)= f(t p) 36 I D (A) 100 30 24 10-1 18 0,5 12 0,2 0,1 0,05 0,02 6 0,01 0,005 0 10-2 0 0 2 4 6 8 10 12 14 16 10-4 18 10-3 10-2 10-1 10 101 102 VGS (V) tp = 100 µs V DS = 10 V T j: 25 °C D= tp / T 125 °C R th(j-s) = 0,78 K/W 150 °C Copyright Vincotech 5 R (K/W) Tau(s) 1,16E-01 1,43E+00 2,32E-01 1,77E-01 2,45E-01 6,03E-02 9,01E-02 8,37E-03 9,19E-02 1,21E-03 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Thermistor Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 6 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switching Characteristics Figure 1. MOSFET Figure 2. MOSFET Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I D) E = f(rg) E ( mWs) E (mWs) 1,2 Eon Eon E o ff 0,9 2 Eo n Eon 1,5 Eoff 0,6 1 Eo ff Eoff 0,3 0,5 0 0 0 20 40 60 80 100 120 0 I C (A) 25 °C With an induc tive load at 600 V V DS = -4/16 V V GS = R gon = 2 Ω R goff = 2 Ω 125 °C T j: 1 2 3 4 ID = Figure 3. FWD 60 5 T j: 7 8 FWD E rec = f(I D) E rec = f(r g ) E (mWs) Erec 9 125 °C Figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or 1,6 R g ( Ω) A Typical reverse recovered energy loss as a f unction of collector current E (mWs) 6 25 °C With an inductive load at 600 V V DS = -4/16 V V GS = 2,4 2 Erec 1,2 1,6 1,2 0,8 0,8 0,4 0,4 Erec Erec 0 0 0 20 40 With an induc tive load at 600 V V DS = -4/16 V V GS = R gon = 2 Copyright Vincotech 60 80 100 I D (A) 0 120 25 °C T j: 1 2 3 With an inductive load at 600 V V DS = -4/16 V V GS = 125 °C Ω ID = 7 60 4 5 6 7 8 r g (Ω) 9 25 °C T j: 125 °C A 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switching Characteristics Figure 5. MOSFET Figure 6. MOSFET Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I D) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) 0,1 0,1 td(off ) td(on) td(on) tr tr 0,01 0,01 tf tf 0,001 0,001 0 20 40 60 80 100 120 0 (A ) I D (A) With an induc tive load at 125 °C Tj= 600 V V DS = V GS = -4/16 V R gon = 2 Ω R goff = 2 Ω 1 2 3 4 5 6 7 8 9 r g (Ω) With an inductive load at 125 °C Tj= 600 V V DS = V GS = ID = Figure 7. FWD -4/16 V 60 A Figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of MOSFET turn on gat e resist or t rr = f(I D) t rr = f(R gon) 0,035 t rr (μs) t rr (μs) 0,04 trr trr 0,03 0,03 0,025 trr trr 0,02 0,02 0,015 0,01 0,01 0,005 0 0 0 20 40 60 80 100 120 0 I D (A) At V DS= V GS = R gon = 600 V -4/16 V 2 Ω Copyright Vincotech 2 3 4 5 6 7 8 9 R g on (Ω) 25 °C T j: 1 At 125 °C 8 V DS = V GS = ID = 600 V -4/16 V 60 A 25 °C T j: 125 °C 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unction of collector current Typical recoved charge as a f unct ion of MOSFET t urn on gate resistor Qr = f(I D) Q r = f(R gon) Q r (µC) Q r (μ C) 4 Qr 4 Qr 3 3 2 2 1 1 Qr Qr 0 At 0 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 I D (A) A V DS = V GS = R gon = 600 V -4/16 V 2 Ω 25 °C T j: At V DS = V GS = ID= 125 °C Figure 11. FWD 600 V -4/16 V 60 A 9 R g o n (Ω) 25 °C T j: 125 °C Figure 12. Typical peak reverse recovery current current as a f unct ion of collect or current FWD Typical peak reverse recovery current as a f unct ion of MOSFET t urn on gate resistor I RM = f(I D) I RM = f(R gon) 200 250 I R M (A) I R M (A) IRM I RM 200 150 150 100 100 I RM IRM 50 50 0 0 0 At 20 600 40 V DS = V GS = -4/16 V R gon = 2 Ω Copyright Vincotech 60 80 V 100 I D (A) 0 120 T j: 1 2 3 4 5 6 7 8 9 R g o n (Ω) 25 °C At 125 °C 9 V DS = V GS = 600 V -4/16 V ID = 60 A 25 °C T j: 125 °C 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unction of MOSFET t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 25000 d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 25000 diF / dt dir r/dt diF / dt di r r/ dt 20000 20000 15000 15000 10000 10000 5000 5000 0 0 0 20 40 60 80 100 0 120 1 2 3 4 5 6 I C (A) At V DS = V GS = R gon = 600 V -4/16 V 2 Ω Copyright Vincotech 25 °C T j: At 125 °C 10 V DS = V GS = I D= 600 V 25 °C -4/16 V 125 °C 60 A 7 8 9 R g o n (Ω) 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switching Definitions General conditions = 125 °C = 2Ω Tj R gon = R goff Figure 1. MOSFET Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) 2Ω Figure 2. MOSFET Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 150 400 % % 350 tdoff 100 VGS 90% VDS 90% ID ID 300 250 50 200 tEoff VGS VDS 150 ID 1% 0 VDS 100 VGS tdon 50 -50 VGS 10% 0 VDS 3% ID 10% tEon -100 -0,02 0 0,02 0,04 0,06 0,08 0,1 0,12 -50 2,98 0,14 t (µs) V GS (0%) = V GS (100%) = -4 V 16 V DS (100%) = 600 I D (100%) = 61 3 3,02 3,04 -4 V V V GS (0%) = V GS (100%) = 16 V V V DS (100%) = 600 V A I D (100%) = t don = 61 A t doff = 0,081 µs t Eoff = Figure 3. 0,089 µs MOSFET Turn-of f Swit ching Wavef orms & def init ion of t f t E on = Figure 4. 0,021 µs 0,054 µs 3,06 t (µs) 3,08 MOSFET Turn-on Swit ching Wavef orms & def init ion of tr 150 350 % ID % 125 300 fitted ID VDS 100 250 ID 90% 75 200 ID 60% 50 150 ID 40% VDS 25 100 ID 10% tf 0 50 -25 -50 0,065 IC 10% 0 0,075 0,085 0,095 0,105 0,115 -50 0,125 3 t ( µs) V DS (100%) = 600 V I D (100%) = tf = 61 A 0,013 µs Copyright Vincotech IC 90% tr 3,01 3,02 3,03 3,04 3,05 3,06 3,07 t (µs) 11 V DS (100%) = 600 V I D (100%) = tr = 61 A 0,009 µs 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switching Definitions Figure 5. MOSFET Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. MOSFET Turn-on Swit ching Wavef orms & def init ion of t Eon 125 150 ID 1% % % 125 100 Pon Eoff Eon 100 75 Poff 75 50 50 25 VGS 90% 25 VDS 3% VGS 10% 0 tEoff 0 -25 tEon -25 -50 -50 0 0,02 0,04 0,06 0,08 0,1 3 0,12 3,01 3,02 3,03 3,04 P off (100%) = 36,42 kW P on (100%) = 36,42 kW E off (100%) = 0,44 mJ E on (100%) = 0,82 mJ t Eoff = 0,09 µs t E on = 0,05 µs Figure 7. 3,05 3,06 3,07 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 Id % 100 trr 50 Vd fitted 0 IRRM 10% -50 -100 -150 -200 IRRM 90% IRRM 100% -250 -300 3,01 3,03 3,05 3,07 3,09 t (µs) V d (100%) = 600 V I d (100%) = 61 A I RRM (100%) = -143 A t rr = 0,029 µs Copyright Vincotech 12 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. 250 150 Qrr Id % FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) % 100 200 Prec tQrr 50 150 Erec 0 100 -50 50 -100 0 -150 -50 -200 -100 -250 3,01 3,03 3,05 3,07 3,09 -150 3,03 3,11 t (µs) tErec 3,04 3,05 3,06 3,07 3,09 3,1 t (µs) I d (100%) = 61 A P rec (100%) = 36,42 kW Q rr (100%) = 2,34 µC E rec (100%) = 0,84 mJ t Q rr = 0,06 µs t E rec = 0,06 µs Copyright Vincotech 3,08 13 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Ordering Code & Marking Version without thermal paste 12mm housing with thermal paste 12mm housing Ordering Code 10-PY126PA020MR-L227F28Y 10-PY126PA020MR-L227F28Y-/3/ NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L227F28Y L227F28Y in packaging barcode as L227F28Y L227F28Y-/3/ Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Pos 1 52,2 2,7 DC-3 2 52,2 0 DC-3 3 45,5 12 G15 4 42,5 13 S15 5 41,2 0 DC+3 6 38,5 0 DC+3 7 33,1 0 DC+2 8 30,4 0 DC+2 9 25 10 G13 10 22 11 S13 11 19,4 0 DC-2 12 16,7 0 DC-2 13 13,7 0 DC-1 14 11 0 DC-1 15 8,7 12 G11 16 5,7 13 S11 17 0 0 DC+1 18 0 2,7 DC+1 19 14,3 15,6 Therm2 20 16,1 12,6 Therm1 21 0 28,2 22 2,7 28,2 Ph1 Ph1 23 5,7 26,7 24 8,7 25,7 S12 G12 Pin X Y Pos 25 19,4 28,2 Ph2 29 36,3 28,2 Ph3 26 22,1 28,2 Ph2 30 39 28,2 Ph3 27 28 23,1 26,1 25,2 24,2 S14 G14 31 32 42 45 26,7 25,7 S16 G16 Copyright Vincotech Pin table [mm] 14 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Pinout Identification ID Component Voltage Current Function T11-T16 MOSFET 1200 V 20 mΩ Inverter Switch Rt NTC - - Thermistor Copyright Vincotech 15 Comment 09 Nov. 2015 / Revision 2 10-PY126PA020MR-L227F28Y datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. Document No.: Date: Modification: Pages 10-PY126PA020MR-L227F28Y-D2-14 09 Nov. 2015 Inverter switch characteristic values and switcing values correction 3,4,7-11 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 16 09 Nov. 2015 / Revision 2