10 PY126PA020MR L227F28Y D2 14

10-PY126PA020MR-L227F28Y
datasheet
flow PACK 1
1200 V / 20 mΩ
Features
flow 1 12mm housing
● Rohm Silicone Carbide Power MOSFET,
Trench Technology
● Sixpack with three separated legs
● Solderless Press-fit Mounting Technology
Schematic
Target applications
● Battery Charger
Types
● 10-PY126PA020MR-L227F28Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
58
A
274
A
123
W
Inverter Switch
Drain-source voltage
V DSS
Drain current
ID
T j = T jmax
Peak drain current
I DM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-source voltage
V GSS
-4/+22
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
Ts = 80 °C
Ts = 80 °C
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching
condition
T jop
-40…+(T jmax - 25)
°C
4000
V
min 12,7
mm
12,01
mm
Isolation Properties
Isolation voltage
V isol
DC voltage
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
t p=2s
>200
CTI
2
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Characteristic Values
Inverter Switch
Parameter
Symbol
Conditions
Value
V GS [V] V DS [V] I D [A] T j[ °C]
Min
Unit
Typ
Max
25
21
25
125
28
150
32
Static
Drain-sourc e on-state resistanc e
Gate-source threshold voltage
18
r DS(on)
40
10
V GS(th)
Gate to Sourc e Leakage Current
I GSS
+22
0
Gate to Sourc e Leakage Current
I GSS
-4
0
Zero Gate Voltage Drain Current
I DSS
0
1200
0,02
25
2,7
4,5
25
200
125
25
25
20
125
Gate c harge
Qg
214
Gate to source charge
Q GS
Gate to drain charge
Q GD
82
Input capacitance
C iss
2674
Output capacitance
C oss
Reverse transfer capac itance
C rss
0
nA
-200
3,5
f=1MHz
V
125
rg
600
5,6
125
Internal gate resistance
18
mΩ
40
800
25
25
44
152
µA
Ω
nC
pF
54
Reverse Diode Static
Forward voltage
40
Vsd
25
3,2
125
V
Thermal
Thermal resistance junction to sink
Copyright Vincotech
R th(j-s)
phase-c hange
material λ=3,4
W/mK
0,78
3
K/W
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switch
Parameter
Symbol
Conditions
Value
Unit
I C [A] or
V GE [V]
V r [V]
or
I F [A] or
V CE [V]
I D [A]
T j[ °C]
Min
Typ
Max
MOSFET Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 2 Ω
R gon = 2 Ω
t d(off)
-4/16
Fall time
600
60
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Q rFWD = 2,6 µC
Q rFWD = 2,3 µC
25
125
25
125
25
125
25
125
25
125
25
125
21
21
9
9
74
81
11
13
0,837
0,821
0,438
0,437
25
125
25
125
25
125
25
125
25
125
159
143
30
29
2,649
2,344
0,965
0,843
18333
16364
ns
mWs
Reverse Diode Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Qr
di /dt = 8533 A/µs
-4/16
di /dt = 9060 A/µs
600
60
E rec
(di rf/dt )max
A
ns
µC
mWs
A/µs
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
4
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switch Characteristics
MOSFET
Typical output characteristics
MOSFET
Typical output characteristics
I D = f(V DS)
I D= f(V DS)
200
ID (A)
ID (A)
200
160
160
120
120
80
80
40
40
0
0
-40
0
2
4
tp =
250
µs
V GS=
18
V
6
T j:
8
VDS (V)
10
-4
-2
0
2
4
8
10
VDS (V)
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GS from
0 V to 20 V in steps of 2 V
MOSFET
Typical transfer characteristics
6
µs
°C
Transient thermal impedance as a function of pulse width
I D = f(V GS)
MOSFET
Z th(j-s)= f(t p)
36
I D (A)
100
30
24
10-1
18
0,5
12
0,2
0,1
0,05
0,02
6
0,01
0,005
0
10-2
0
0
2
4
6
8
10
12
14
16
10-4
18
10-3
10-2
10-1
10
101
102
VGS (V)
tp =
100
µs
V DS =
10
V
T j:
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,78
K/W
150 °C
Copyright Vincotech
5
R (K/W)
Tau(s)
1,16E-01
1,43E+00
2,32E-01
1,77E-01
2,45E-01
6,03E-02
9,01E-02
8,37E-03
9,19E-02
1,21E-03
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Thermistor
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
6
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switching Characteristics
Figure 1.
MOSFET
Figure 2.
MOSFET
Typical swit ching energy losses as a f unction of collector current
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I D)
E = f(rg)
E ( mWs)
E (mWs)
1,2
Eon
Eon
E o ff
0,9
2
Eo n
Eon
1,5
Eoff
0,6
1
Eo ff
Eoff
0,3
0,5
0
0
0
20
40
60
80
100
120
0
I C (A)
25 °C
With an induc tive load at
600
V
V DS =
-4/16
V
V GS =
R gon =
2
Ω
R goff =
2
Ω
125 °C
T j:
1
2
3
4
ID =
Figure 3.
FWD
60
5
T j:
7
8
FWD
E rec = f(I D)
E rec = f(r g )
E (mWs)
Erec
9
125 °C
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
1,6
R g ( Ω)
A
Typical reverse recovered energy loss as a f unction of collector current
E (mWs)
6
25 °C
With an inductive load at
600
V
V DS =
-4/16
V
V GS =
2,4
2
Erec
1,2
1,6
1,2
0,8
0,8
0,4
0,4
Erec
Erec
0
0
0
20
40
With an induc tive load at
600
V
V DS =
-4/16
V
V GS =
R gon =
2
Copyright Vincotech
60
80
100
I D (A)
0
120
25 °C
T j:
1
2
3
With an inductive load at
600
V
V DS =
-4/16
V
V GS =
125 °C
Ω
ID =
7
60
4
5
6
7
8
r g (Ω)
9
25 °C
T j:
125 °C
A
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switching Characteristics
Figure 5.
MOSFET
Figure 6.
MOSFET
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I D)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(off )
0,1
0,1
td(off )
td(on)
td(on)
tr
tr
0,01
0,01
tf
tf
0,001
0,001
0
20
40
60
80
100
120
0
(A )
I D (A)
With an induc tive load at
125
°C
Tj=
600
V
V DS =
V GS =
-4/16
V
R gon =
2
Ω
R goff =
2
Ω
1
2
3
4
5
6
7
8
9
r g (Ω)
With an inductive load at
125
°C
Tj=
600
V
V DS =
V GS =
ID =
Figure 7.
FWD
-4/16
V
60
A
Figure 8.
FWD
Typical reverse recovery t ime as a f unction of collector current
Typical reverse recovery t ime as a f unct ion of MOSFET turn on gat e resist or
t rr = f(I D)
t rr = f(R gon)
0,035
t rr (μs)
t rr (μs)
0,04
trr
trr
0,03
0,03
0,025
trr
trr
0,02
0,02
0,015
0,01
0,01
0,005
0
0
0
20
40
60
80
100
120
0
I D (A)
At
V DS=
V GS =
R gon =
600
V
-4/16
V
2
Ω
Copyright Vincotech
2
3
4
5
6
7
8
9
R g on (Ω)
25 °C
T j:
1
At
125 °C
8
V DS =
V GS =
ID =
600
V
-4/16
V
60
A
25 °C
T j:
125 °C
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a f unction of collector current
Typical recoved charge as a f unct ion of MOSFET t urn on gate resistor
Qr = f(I D)
Q r = f(R gon)
Q r (µC)
Q r (μ C)
4
Qr
4
Qr
3
3
2
2
1
1
Qr
Qr
0
At
0
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
I D (A)
A
V DS =
V GS =
R gon =
600
V
-4/16
V
2
Ω
25 °C
T j:
At
V DS =
V GS =
ID=
125 °C
Figure 11.
FWD
600
V
-4/16
V
60
A
9
R g o n (Ω)
25 °C
T j:
125 °C
Figure 12.
Typical peak reverse recovery current current as a f unct ion of collect or current
FWD
Typical peak reverse recovery current as a f unct ion of MOSFET t urn on gate resistor
I RM = f(I D)
I RM = f(R gon)
200
250
I R M (A)
I R M (A)
IRM
I RM
200
150
150
100
100
I RM
IRM
50
50
0
0
0
At
20
600
40
V DS =
V GS =
-4/16
V
R gon =
2
Ω
Copyright Vincotech
60
80
V
100
I D (A)
0
120
T j:
1
2
3
4
5
6
7
8
9
R g o n (Ω)
25 °C
At
125 °C
9
V DS =
V GS =
600
V
-4/16
V
ID =
60
A
25 °C
T j:
125 °C
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unction of MOSFET t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
25000
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
25000
diF / dt
dir r/dt
diF / dt
di r r/ dt
20000
20000
15000
15000
10000
10000
5000
5000
0
0
0
20
40
60
80
100
0
120
1
2
3
4
5
6
I C (A)
At
V DS =
V GS =
R gon =
600
V
-4/16
V
2
Ω
Copyright Vincotech
25 °C
T j:
At
125 °C
10
V DS =
V GS =
I D=
600
V
25 °C
-4/16
V
125 °C
60
A
7
8
9
R g o n (Ω)
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switching Definitions
General conditions
=
125 °C
=
2Ω
Tj
R gon
=
R goff
Figure 1.
MOSFET
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
2Ω
Figure 2.
MOSFET
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
150
400
%
%
350
tdoff
100
VGS 90%
VDS 90%
ID
ID
300
250
50
200
tEoff
VGS
VDS
150
ID 1%
0
VDS
100
VGS
tdon
50
-50
VGS 10%
0
VDS 3%
ID 10%
tEon
-100
-0,02
0
0,02
0,04
0,06
0,08
0,1
0,12
-50
2,98
0,14
t (µs)
V GS (0%) =
V GS (100%) =
-4
V
16
V DS (100%) =
600
I D (100%) =
61
3
3,02
3,04
-4
V
V
V GS (0%) =
V GS (100%) =
16
V
V
V DS (100%) =
600
V
A
I D (100%) =
t don =
61
A
t doff =
0,081
µs
t Eoff =
Figure 3.
0,089
µs
MOSFET
Turn-of f Swit ching Wavef orms & def init ion of t f
t E on =
Figure 4.
0,021
µs
0,054
µs
3,06
t (µs)
3,08
MOSFET
Turn-on Swit ching Wavef orms & def init ion of tr
150
350
%
ID
%
125
300
fitted
ID
VDS
100
250
ID 90%
75
200
ID 60%
50
150
ID 40%
VDS
25
100
ID 10%
tf
0
50
-25
-50
0,065
IC 10%
0
0,075
0,085
0,095
0,105
0,115
-50
0,125
3
t ( µs)
V DS (100%) =
600
V
I D (100%) =
tf =
61
A
0,013
µs
Copyright Vincotech
IC 90%
tr
3,01
3,02
3,03
3,04
3,05
3,06
3,07
t (µs)
11
V DS (100%) =
600
V
I D (100%) =
tr =
61
A
0,009
µs
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switching Definitions
Figure 5.
MOSFET
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
MOSFET
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
150
ID 1%
%
%
125
100
Pon
Eoff
Eon
100
75
Poff
75
50
50
25
VGS 90%
25
VDS 3%
VGS 10%
0
tEoff
0
-25
tEon
-25
-50
-50
0
0,02
0,04
0,06
0,08
0,1
3
0,12
3,01
3,02
3,03
3,04
P off (100%) =
36,42
kW
P on (100%) =
36,42
kW
E off (100%) =
0,44
mJ
E on (100%) =
0,82
mJ
t Eoff =
0,09
µs
t E on =
0,05
µs
Figure 7.
3,05
3,06
3,07
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
Id
%
100
trr
50
Vd
fitted
0
IRRM 10%
-50
-100
-150
-200
IRRM 90%
IRRM 100%
-250
-300
3,01
3,03
3,05
3,07
3,09
t (µs)
V d (100%) =
600
V
I d (100%) =
61
A
I RRM (100%) =
-143
A
t rr =
0,029
µs
Copyright Vincotech
12
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
250
150
Qrr
Id
%
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
%
100
200
Prec
tQrr
50
150
Erec
0
100
-50
50
-100
0
-150
-50
-200
-100
-250
3,01
3,03
3,05
3,07
3,09
-150
3,03
3,11
t (µs)
tErec
3,04
3,05
3,06
3,07
3,09
3,1
t (µs)
I d (100%) =
61
A
P rec (100%) =
36,42
kW
Q rr (100%) =
2,34
µC
E rec (100%) =
0,84
mJ
t Q rr =
0,06
µs
t E rec =
0,06
µs
Copyright Vincotech
3,08
13
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing
with thermal paste 12mm housing
Ordering Code
10-PY126PA020MR-L227F28Y
10-PY126PA020MR-L227F28Y-/3/
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
in DataMatrix as
L227F28Y
L227F28Y
in packaging barcode as
L227F28Y
L227F28Y-/3/
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Pos
1
52,2
2,7
DC-3
2
52,2
0
DC-3
3
45,5
12
G15
4
42,5
13
S15
5
41,2
0
DC+3
6
38,5
0
DC+3
7
33,1
0
DC+2
8
30,4
0
DC+2
9
25
10
G13
10
22
11
S13
11
19,4
0
DC-2
12
16,7
0
DC-2
13
13,7
0
DC-1
14
11
0
DC-1
15
8,7
12
G11
16
5,7
13
S11
17
0
0
DC+1
18
0
2,7
DC+1
19
14,3
15,6
Therm2
20
16,1
12,6
Therm1
21
0
28,2
22
2,7
28,2
Ph1
Ph1
23
5,7
26,7
24
8,7
25,7
S12
G12
Pin
X
Y
Pos
25
19,4
28,2
Ph2
29
36,3
28,2
Ph3
26
22,1
28,2
Ph2
30
39
28,2
Ph3
27
28
23,1
26,1
25,2
24,2
S14
G14
31
32
42
45
26,7
25,7
S16
G16
Copyright Vincotech
Pin table [mm]
14
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11-T16
MOSFET
1200 V
20 mΩ
Inverter Switch
Rt
NTC
-
-
Thermistor
Copyright Vincotech
15
Comment
09 Nov. 2015 / Revision 2
10-PY126PA020MR-L227F28Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY126PA020MR-L227F28Y-D2-14
09 Nov. 2015
Inverter switch characteristic values and switcing values
correction
3,4,7-11
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LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
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As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
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Copyright Vincotech
16
09 Nov. 2015 / Revision 2
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