20 1B06IPB010RC02 L815A49 T1 14

20-1B06IPB010RC02-L815A49
target datasheet
flow IPM 1B
600 V / 10 A
Features
flow IPM 1B
● CIP-topology (converter + inverter + PFC)
● Optimized for PFC frequencies up to 150kHz
● Integrated PFC controller circuit with programmable
DC output voltage and PWM frequency
● Inverter gate drive inclusive bootstrap for high side
power supply
● Over current and short circuit protection
● Open emitter or emitter shunts
● Temperature sensor
Target Applications
Schematic
● Embedded drives
● Industrial drives
Types
● 20-1B06IPB010RC02-L815A49
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1600
V
16
21
A
130
A
80
A2s
19
29
W
Input Rectifier Diode
Repetitive peak reverse voltage
V RRM
DC forward current
I FAV
Surge forward current
I FSM
T j = T jmax
T h = 80 °C
T c = 80 °C
t p = 10 ms
50 Hz half sine wave
T j = 150 °C
T j = T jmax
T h = 80 °C
T c = 80 °C
I 2t-value
I 2t
Power dissipation
P tot
Maximum Junction Temperature
T jmax
150
°C
V CE
650
V
19
20
A
t p limited by T jmax
90
A
V CE ≤ 650 V, T j ≤ T op max
90
A
37
56
W
PFC IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
IC
I CRM
Turn off safe operating area
T j = T jmax
T j = T jmax
T h = 80 °C
T c = 80 °C
T h = 80 °C
T c = 80 °C
Power dissipation
P tot
Gate-emitter peak voltage
V GE
±20
V
T jmax
175
°C
Maximum Junction Temperature
copyright Vincotech
1
08 Apr. 2016 / Revision 1
20-1B06IPB010RC02-L815A49
target datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
6
8
A
12
A
12
19
W
PFC Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
V RRM
IF
T j = T jmax
T h = 80 °C
T c = 80 °C
Repetitive peak forward current
I FRM
t p limited by T jmax
Power dissipation
P tot
T j = T jmax
Maximum Junction Temperature
T jmax
175
°C
V RRM
650
V
13
16
A
180
A
130
A2s
60
A
25
37
W
T h = 80 °C
T c = 80 °C
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
2
I t-value
IF
I FSM
I 2t
T j = T jmax
T h = 80 °C
T c = 80 °C
t p = 8,3 ms
60 Hz half sine wave
Repetitive peak forward current
I FRM
t p limited by T jmax
Power dissipation
P tot
T j = T jmax
Maximum Junction Temperature
T jmax
175
°C
V CE
600
V
9
12
A
t p limited by T jmax
30
A
V CE ≤ 600 V, T j ≤ 150 °C
20
A
20
31
W
±20
V
5
400
µs
V
175
°C
600
V
T h = 80 °C
T c = 80 °C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
IC
I CRM
Turn off safe operating area
Power dissipation
P tot
Gate-emitter peak voltage
V GE
Short circuit ratings
t SC
V CC
Maximum Junction Temperature
T j = T jmax
T j = T jmax
T h = 80 °C
T c = 80 °C
T h = 80 °C
T c = 80 °C
T j ≤ 150 °C
V GE = 15 V
T jmax
Inverter Diode
Peak Repetitive Reverse Voltage
V RRM
IF
T j = T jmax
Power dissipation
P tot
T j = T jmax
Maximum Junction Temperature
T jmax
DC forward current
copyright Vincotech
T h = 80 °C
T c = 80 °C
T h = 80 °C
T c = 80 °C
8
11
17
25
175
2
A
W
°C
08 Apr. 2016 / Revision 1
20-1B06IPB010RC02-L815A49
target datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
PFC Shunt
DC forward current
Power dissipation
IF
T c = 25 °C
10
A
P tot
T c = 25 °C
10
W
26
V
PFC Controller*
VCC supply voltage
V CC
V CC common with gate driver IC
VSENSE voltage
V VSENSE
5,3
V
Vsense Current
I VSENSE
±1
mA
FREQ pin voltage
V FREQ
5,3
V
Maximum Junction Temperature
T jmax
125
°C
IF
8
A
P tot
2
W
500
V
* for more information see infineon's datasheet ICE3PCS02
DC - Shunt
DC forward current
Power dissipation
DC link Capacitor
Maximum DC voltage
T c = 25 °C
V MAX
Gate Driver*
Supply voltage
U CC
20
V
Input voltage (LIN, HIN, EN)
U IN
10
V
U OUT
VCC+0,5
V
Output voltage (FAULT)
* for more information see infineon's datasheet 6ED003L02-F2
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching condition
T op
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Isolation Properties
Insulation voltage
Comparative tracking index
copyright Vincotech
V is
t=2s
CTI
DC voltage
>200
3
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20-1B06IPB010RC02-L815A49
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V]
I C [A] or
V GE [V] or or
I [A] or
V CE [V] or F
V GS [V]
I D [A]
V DS [V]
T j [°C]
Min
Typ
Unit
Max
Input Rectifier Diode
Forward voltage
VF
7
Threshold voltage (for power loss calc. only)
V to
7
Slope resistance (for power loss calc. only)
rt
Reverse current
Ir
Thermal resistance chip to heatsink
7
1200
R th(j-s)
phase-change
material
λ = 3,4W/mK
V GE(th)
V CE = V GE
25
125
25
125
25
125
1,04
0,97
0,87
0,74
25
33
25
V
V
mΩ
0,01
mA
K/W
3,66
PFC IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
V CEsat
15
Collector-emitter cut-off
I CES
0
650
Gate-emitter leakage current
IGES
20
0
Integrated Gate resistor
Rgint
Input capacitance
C ies
Output capacitance
C oss
Reverse transfer capacitance
C rss
Thermal resistance chip to heatsink
R th(j-s)
0,0003
25
30
25
125
3,3
4
4,7
2,12
2,44
2,22
25
0,04
25
125
25
125
120
none
V
V
mA
nA
Ω
2100
f = 1 MHz
25
0
25
45
pF
7,7
phase-change
material
λ = 3,4W/mK
2,56
K/W
PFC Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
VF
R th(j-s)
10
25
125
1,23
phase-change
material
λ = 3,4W/mK
1,12
0,97
1,87
7,75
V
K/W
PFC Diode
Forward voltage
VF
Reverse leakage current
I rm
Thermal resistance chip to heatsink
R th(j-s)
400
15
25
125
10
25
1,92
1,97
2,22
1,6
phase-change
material
λ = 3,4W/mK
V
µA
3,87
K/W
40
mΩ
PFC Shunt
R4 value
R
Inverter Transistor
Gate emitter threshold voltage
V GE(th)
Collector-emitter saturation voltage*
V CEsat
Collector-emitter cut-off current incl. Diode
V CE = V GE
15
0,00017
25
4,4
5
5,6
10
25
125
0,8
2,20
2,32
2,62
I CES
0
600
25
20
0
25
Gate-emitter leakage current
I GES
Integrated Gate resistor
R gint
none
Input capacitance
C ies
655
Output capacitance
C oss
Reverse transfer capacitance
C rss
Gate charge
QG
Thermal resistance chip to heatsink
R th(j-s)
f = 1 MHz
0
25
25
37
V
V
0,1
mA
120
nA
Ω
pF
22
15
phase-change
material
λ = 3,4W/mK
480
10
25
64
nC
4,72
K/W
* chip data
** including gate driver
copyright Vincotech
4
08 Apr. 2016 / Revision 1
20-1B06IPB010RC02-L815A49
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V]
I C [A] or
V GE [V] or or
I [A] or
V CE [V] or F
V GS [V]
I D [A]
V DS [V]
Unit
T j [°C]
Min
Typ
Max
25
125
0,7
2,23
2,18
2,8
Inverter Diode
Diode forward voltage
Thermal resistance chip to heatsink
VF
R th(j-s)
10
phase-change
material
λ = 3,4W/mK
V
5,72
K/W
30
mΩ
100
nF
DC - Shunt
R1,R2,R3 value
25
R
DC link Capacitor
C Value
C
Gate Driver
Supply voltage
U CC
Quiescent Vcc supply current
I QCC
13
U LIN = 0 V; U HIN=3,3 V
15
17,5
V
1,3
2
mA
Input voltage (LIN, HIN, EN)
U IN
0
Logic "0" input voltage (LIN, HIN)
UIH
1,7
2,1
2,4
Logic "1" input voltage (LIN, HIN)
U IL
U CC = 15 V
5
0,7
0,9
1,1
Positive going threshold voltage (EN)
U EN, TH+
1,9
2,1
2,3
Negative going threshold voltage (EN)
U EN, TH-
1,1
1,3
1,5
9
10,3
12
380
445
510
70
100
V
Input clamp voltage (LIN, HIN, EN)
ITRIP positive going threshold
U IN, CLAMP I IN = 4 mA
U TR, TH+
Input bias current LIN high
I LIN+
U LIN = 3,3 V
Input bias current LIN low
I LIN-
U LIN = 0 V
Input bias current HIN high
I HIN+
U HIN = 3,3 V
Input bias current HIN low
I HIN-
U HIN = 0 V
Input bias current EN high
I EN+-
U HIN = 3,3 V
Output voltage (FAULT)
U FLT
Low on resistor of pull down trans. (FAULT)
Pulse width for ON or OFF
R ON, FLT
25
Turn-on propagation delay (LIN, HIN)
t ON
t OFF
FAULT reset time
t RST
Fixed deadtime between high and low side
t DT
200
70
100
110
120
45
120
0
U FAULT = 0,5 V
45,0
t IN
Turn-off propagation delay (LIN, HIN)
110
mV
µA
U CC
V
100
Ω
1
µs
400
530
800
360
490
760
U LIN/HIN = 0 V or 3,3 V
ns
U LIN/HIN = 0 V & 3,3 V
4
ms
150
310
ns
PFC Controller
VCC turn-on threshold
V CCon
11,5
12,0
12,9
VCC turn-off threshold
V CCUVLO
10,5
11,0
11,9
V
6,4
8,5
mA
3,5
4,7
C L = 1 nF
Operating current with active GATE
I CCHG
Operating current during standby
I CCstby
PFC switching frequency
F SWnom
Set with an internal resistor R FREQ = 220 kΩ*
DC2+
Set with an internal resistor divider**
DC link voltage
DC link treshold (OVP1) low to high
V OVP1L2H
DC link treshold (OVP1) high to low
V OVP1H2L
Blanking time for OVP1
t OVP1
20
339
25
350
361
100
%
12
µs
V OVP1_HYS
6
8
11
DC link treshold (OVP2) low to high
V OVP2_L2H
428
443
460
DC link treshold (OVP2) high to low
V OVP2_H2L relative to OVP2
t OVP2
V
%
DC link treshold (OVP1) hysteresis
Blanking time for OVP2
mA
kHz
108
relative to output voltage
OVP1 values varies with external resistor
Feedback voltage V DClink/130 can be measured at
VSENSE pin
V
%
V
92
%
12
µs
*switching frequency is setable by an external resistor between pins 32 (see figure 1 for values)
**DC link voltage is setable by an external resistor between pins 32 (see figure 2 for values)
copyright Vincotech
5
08 Apr. 2016 / Revision 1
20-1B06IPB010RC02-L815A49
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
V r [V]
I C [A] or
V GE [V] or or
I [A] or
V CE [V] or F
V GS [V]
I D [A]
V DS [V]
Value
T j [°C]
Min
Typ
Unit
Max
Thermistor
Rated resistance
R
Deviation of R 100
ΔR/R
Power dissipation
P
25
R 100 = 1486 Ω
100
Power dissipation constant
B-value
B (25/50)
B-value
B ( 25/100) Tol. ±3%
Tol. ±3%
Vincotech NTC Reference
copyright Vincotech
Ω
12
%
25
200
mW
25
2
mW/K
25
3950
K
25
3998
25
6
22000
-12
K
B
08 Apr. 2016 / Revision 1
20-1B06IPB010RC02-L815A49
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste 17mm housing with solder pins
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Ordering Code
20-1B06IPB010RC02- L815A49
Text
Datamatrix
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table
X
Y
Pin
1
2
3
4
5
6
7
45,2
42,2
39,2
36,2
33,2
30,2
27,2
0
0
0
0
0
0
0
28
29
30
31
32
33
34
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
24,2
21,2
18,2
15,2
12,2
9,2
6,2
3,2
0,2
0
5
10
15
20
22,7
25,4
30,4
33,1
38,1
43,1
0
0
0
0
0
0
0
0
0
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
Pin
Pin table
X
45,4
28,3
27,3
32,4
34,9
41,5
39
Y
21,9
20,1
17,6
14,2
14,2
10,9
6,3
Pinout
copyright Vincotech
7
08 Apr. 2016 / Revision 1
20-1B06IPB010RC02-L815A49
target datasheet
Packaging instruction
Standard packaging quantity (SPQ)
>SPQ
100
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1B packages see vincotech.com website.
Package data
Package data for flow 1B packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
20-1B06IPB010RC02-L815A49-T1-14
08 Apr. 2016
Modification:
Pages
Product status definition
Datasheet Status
Product Status
Definition
Target
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice. The data contained
is exclusively intended for technically trained staff.
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be
accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes
without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or
completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that
the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for
reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use provided in la
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
copyright Vincotech
8
08 Apr. 2016 / Revision 1
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