20-1B06IPB010RC02-L815A49 target datasheet flow IPM 1B 600 V / 10 A Features flow IPM 1B ● CIP-topology (converter + inverter + PFC) ● Optimized for PFC frequencies up to 150kHz ● Integrated PFC controller circuit with programmable DC output voltage and PWM frequency ● Inverter gate drive inclusive bootstrap for high side power supply ● Over current and short circuit protection ● Open emitter or emitter shunts ● Temperature sensor Target Applications Schematic ● Embedded drives ● Industrial drives Types ● 20-1B06IPB010RC02-L815A49 Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 16 21 A 130 A 80 A2s 19 29 W Input Rectifier Diode Repetitive peak reverse voltage V RRM DC forward current I FAV Surge forward current I FSM T j = T jmax T h = 80 °C T c = 80 °C t p = 10 ms 50 Hz half sine wave T j = 150 °C T j = T jmax T h = 80 °C T c = 80 °C I 2t-value I 2t Power dissipation P tot Maximum Junction Temperature T jmax 150 °C V CE 650 V 19 20 A t p limited by T jmax 90 A V CE ≤ 650 V, T j ≤ T op max 90 A 37 56 W PFC IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current IC I CRM Turn off safe operating area T j = T jmax T j = T jmax T h = 80 °C T c = 80 °C T h = 80 °C T c = 80 °C Power dissipation P tot Gate-emitter peak voltage V GE ±20 V T jmax 175 °C Maximum Junction Temperature copyright Vincotech 1 08 Apr. 2016 / Revision 1 20-1B06IPB010RC02-L815A49 target datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 6 8 A 12 A 12 19 W PFC Inverse Diode Peak Repetitive Reverse Voltage DC forward current V RRM IF T j = T jmax T h = 80 °C T c = 80 °C Repetitive peak forward current I FRM t p limited by T jmax Power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax 175 °C V RRM 650 V 13 16 A 180 A 130 A2s 60 A 25 37 W T h = 80 °C T c = 80 °C PFC Diode Peak Repetitive Reverse Voltage DC forward current Surge forward current 2 I t-value IF I FSM I 2t T j = T jmax T h = 80 °C T c = 80 °C t p = 8,3 ms 60 Hz half sine wave Repetitive peak forward current I FRM t p limited by T jmax Power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax 175 °C V CE 600 V 9 12 A t p limited by T jmax 30 A V CE ≤ 600 V, T j ≤ 150 °C 20 A 20 31 W ±20 V 5 400 µs V 175 °C 600 V T h = 80 °C T c = 80 °C Inverter Transistor Collector-emitter break down voltage DC collector current Repetitive peak collector current IC I CRM Turn off safe operating area Power dissipation P tot Gate-emitter peak voltage V GE Short circuit ratings t SC V CC Maximum Junction Temperature T j = T jmax T j = T jmax T h = 80 °C T c = 80 °C T h = 80 °C T c = 80 °C T j ≤ 150 °C V GE = 15 V T jmax Inverter Diode Peak Repetitive Reverse Voltage V RRM IF T j = T jmax Power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax DC forward current copyright Vincotech T h = 80 °C T c = 80 °C T h = 80 °C T c = 80 °C 8 11 17 25 175 2 A W °C 08 Apr. 2016 / Revision 1 20-1B06IPB010RC02-L815A49 target datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit PFC Shunt DC forward current Power dissipation IF T c = 25 °C 10 A P tot T c = 25 °C 10 W 26 V PFC Controller* VCC supply voltage V CC V CC common with gate driver IC VSENSE voltage V VSENSE 5,3 V Vsense Current I VSENSE ±1 mA FREQ pin voltage V FREQ 5,3 V Maximum Junction Temperature T jmax 125 °C IF 8 A P tot 2 W 500 V * for more information see infineon's datasheet ICE3PCS02 DC - Shunt DC forward current Power dissipation DC link Capacitor Maximum DC voltage T c = 25 °C V MAX Gate Driver* Supply voltage U CC 20 V Input voltage (LIN, HIN, EN) U IN 10 V U OUT VCC+0,5 V Output voltage (FAULT) * for more information see infineon's datasheet 6ED003L02-F2 Thermal Properties Storage temperature T stg -40…+125 °C Operation temperature under switching condition T op -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Insulation voltage Comparative tracking index copyright Vincotech V is t=2s CTI DC voltage >200 3 08 Apr. 2016 / Revision 1 20-1B06IPB010RC02-L815A49 target datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] I C [A] or V GE [V] or or I [A] or V CE [V] or F V GS [V] I D [A] V DS [V] T j [°C] Min Typ Unit Max Input Rectifier Diode Forward voltage VF 7 Threshold voltage (for power loss calc. only) V to 7 Slope resistance (for power loss calc. only) rt Reverse current Ir Thermal resistance chip to heatsink 7 1200 R th(j-s) phase-change material λ = 3,4W/mK V GE(th) V CE = V GE 25 125 25 125 25 125 1,04 0,97 0,87 0,74 25 33 25 V V mΩ 0,01 mA K/W 3,66 PFC IGBT Gate emitter threshold voltage Collector-emitter saturation voltage V CEsat 15 Collector-emitter cut-off I CES 0 650 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss Thermal resistance chip to heatsink R th(j-s) 0,0003 25 30 25 125 3,3 4 4,7 2,12 2,44 2,22 25 0,04 25 125 25 125 120 none V V mA nA Ω 2100 f = 1 MHz 25 0 25 45 pF 7,7 phase-change material λ = 3,4W/mK 2,56 K/W PFC Inverse Diode Diode forward voltage Thermal resistance chip to heatsink VF R th(j-s) 10 25 125 1,23 phase-change material λ = 3,4W/mK 1,12 0,97 1,87 7,75 V K/W PFC Diode Forward voltage VF Reverse leakage current I rm Thermal resistance chip to heatsink R th(j-s) 400 15 25 125 10 25 1,92 1,97 2,22 1,6 phase-change material λ = 3,4W/mK V µA 3,87 K/W 40 mΩ PFC Shunt R4 value R Inverter Transistor Gate emitter threshold voltage V GE(th) Collector-emitter saturation voltage* V CEsat Collector-emitter cut-off current incl. Diode V CE = V GE 15 0,00017 25 4,4 5 5,6 10 25 125 0,8 2,20 2,32 2,62 I CES 0 600 25 20 0 25 Gate-emitter leakage current I GES Integrated Gate resistor R gint none Input capacitance C ies 655 Output capacitance C oss Reverse transfer capacitance C rss Gate charge QG Thermal resistance chip to heatsink R th(j-s) f = 1 MHz 0 25 25 37 V V 0,1 mA 120 nA Ω pF 22 15 phase-change material λ = 3,4W/mK 480 10 25 64 nC 4,72 K/W * chip data ** including gate driver copyright Vincotech 4 08 Apr. 2016 / Revision 1 20-1B06IPB010RC02-L815A49 target datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] I C [A] or V GE [V] or or I [A] or V CE [V] or F V GS [V] I D [A] V DS [V] Unit T j [°C] Min Typ Max 25 125 0,7 2,23 2,18 2,8 Inverter Diode Diode forward voltage Thermal resistance chip to heatsink VF R th(j-s) 10 phase-change material λ = 3,4W/mK V 5,72 K/W 30 mΩ 100 nF DC - Shunt R1,R2,R3 value 25 R DC link Capacitor C Value C Gate Driver Supply voltage U CC Quiescent Vcc supply current I QCC 13 U LIN = 0 V; U HIN=3,3 V 15 17,5 V 1,3 2 mA Input voltage (LIN, HIN, EN) U IN 0 Logic "0" input voltage (LIN, HIN) UIH 1,7 2,1 2,4 Logic "1" input voltage (LIN, HIN) U IL U CC = 15 V 5 0,7 0,9 1,1 Positive going threshold voltage (EN) U EN, TH+ 1,9 2,1 2,3 Negative going threshold voltage (EN) U EN, TH- 1,1 1,3 1,5 9 10,3 12 380 445 510 70 100 V Input clamp voltage (LIN, HIN, EN) ITRIP positive going threshold U IN, CLAMP I IN = 4 mA U TR, TH+ Input bias current LIN high I LIN+ U LIN = 3,3 V Input bias current LIN low I LIN- U LIN = 0 V Input bias current HIN high I HIN+ U HIN = 3,3 V Input bias current HIN low I HIN- U HIN = 0 V Input bias current EN high I EN+- U HIN = 3,3 V Output voltage (FAULT) U FLT Low on resistor of pull down trans. (FAULT) Pulse width for ON or OFF R ON, FLT 25 Turn-on propagation delay (LIN, HIN) t ON t OFF FAULT reset time t RST Fixed deadtime between high and low side t DT 200 70 100 110 120 45 120 0 U FAULT = 0,5 V 45,0 t IN Turn-off propagation delay (LIN, HIN) 110 mV µA U CC V 100 Ω 1 µs 400 530 800 360 490 760 U LIN/HIN = 0 V or 3,3 V ns U LIN/HIN = 0 V & 3,3 V 4 ms 150 310 ns PFC Controller VCC turn-on threshold V CCon 11,5 12,0 12,9 VCC turn-off threshold V CCUVLO 10,5 11,0 11,9 V 6,4 8,5 mA 3,5 4,7 C L = 1 nF Operating current with active GATE I CCHG Operating current during standby I CCstby PFC switching frequency F SWnom Set with an internal resistor R FREQ = 220 kΩ* DC2+ Set with an internal resistor divider** DC link voltage DC link treshold (OVP1) low to high V OVP1L2H DC link treshold (OVP1) high to low V OVP1H2L Blanking time for OVP1 t OVP1 20 339 25 350 361 100 % 12 µs V OVP1_HYS 6 8 11 DC link treshold (OVP2) low to high V OVP2_L2H 428 443 460 DC link treshold (OVP2) high to low V OVP2_H2L relative to OVP2 t OVP2 V % DC link treshold (OVP1) hysteresis Blanking time for OVP2 mA kHz 108 relative to output voltage OVP1 values varies with external resistor Feedback voltage V DClink/130 can be measured at VSENSE pin V % V 92 % 12 µs *switching frequency is setable by an external resistor between pins 32 (see figure 1 for values) **DC link voltage is setable by an external resistor between pins 32 (see figure 2 for values) copyright Vincotech 5 08 Apr. 2016 / Revision 1 20-1B06IPB010RC02-L815A49 target datasheet Characteristic Values Parameter Conditions Symbol V r [V] I C [A] or V GE [V] or or I [A] or V CE [V] or F V GS [V] I D [A] V DS [V] Value T j [°C] Min Typ Unit Max Thermistor Rated resistance R Deviation of R 100 ΔR/R Power dissipation P 25 R 100 = 1486 Ω 100 Power dissipation constant B-value B (25/50) B-value B ( 25/100) Tol. ±3% Tol. ±3% Vincotech NTC Reference copyright Vincotech Ω 12 % 25 200 mW 25 2 mW/K 25 3950 K 25 3998 25 6 22000 -12 K B 08 Apr. 2016 / Revision 1 20-1B06IPB010RC02-L815A49 target datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version without thermal paste 17mm housing with solder pins NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL VIN LLLLL SSSS Ordering Code 20-1B06IPB010RC02- L815A49 Text Datamatrix Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL VIN LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table X Y Pin 1 2 3 4 5 6 7 45,2 42,2 39,2 36,2 33,2 30,2 27,2 0 0 0 0 0 0 0 28 29 30 31 32 33 34 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 24,2 21,2 18,2 15,2 12,2 9,2 6,2 3,2 0,2 0 5 10 15 20 22,7 25,4 30,4 33,1 38,1 43,1 0 0 0 0 0 0 0 0 0 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 Pin Pin table X 45,4 28,3 27,3 32,4 34,9 41,5 39 Y 21,9 20,1 17,6 14,2 14,2 10,9 6,3 Pinout copyright Vincotech 7 08 Apr. 2016 / Revision 1 20-1B06IPB010RC02-L815A49 target datasheet Packaging instruction Standard packaging quantity (SPQ) >SPQ 100 Standard <SPQ Sample Handling instruction Handling instructions for flow 1B packages see vincotech.com website. Package data Package data for flow 1B packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: 20-1B06IPB010RC02-L815A49-T1-14 08 Apr. 2016 Modification: Pages Product status definition Datasheet Status Product Status Definition Target Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in la 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 8 08 Apr. 2016 / Revision 1