10 PZ12NMA080SH23 M260F03Y D1 14

10-PZ12NMA080SH23-M260F03Y
datasheet
flow MNPC 0
1200 V / 80 A
Features
●
●
●
●
●
flow 0 12mm housing
mixed voltage component topology
neutral point clamped inverter
reactive power capability
low inductance layout
improved LVRT
Schematic
Target applications
● Solar inverter
● UPS
Types
● 10-PZ12NMA080SH23-M260F03Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
67
A
240
A
153
W
Half Bridge Switch
Collector-emitter break down voltage
DC collector current
V CES
IC
T j=T jmax
Pulsed collector current
I CRM
t p limited by T jmax
Power dissipation
P tot
T j=T jmax
Gate-emitter peak voltage
V GE
Short circuit ratings
Maximum Junction Temperature
Copyright Vincotech
T h=80°C
T h=80°C
±20
V
t SC
Tj≤ 150°C
10
µs
V CC
VGE= 15V
800
V
175
°C
T jmax
1
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
1200
V
46
A
100
A
74
W
175
°C
Value
Unit
600
V
49
A
225
A
68
W
±20
V
Half Bridge Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
Symbol
Condition
Neutral Point Switch
Collector-emitter break down voltage
DC collector current
V CES
IC
T j=T jmax
T h=80°C
Pulsed collector current
I CRM
t p limited by T jmax
Power dissipation
P tot
T j=T jmax
Gate-emitter peak voltage
V GE
Short circuit ratings
Maximum Junction Temperature
Parameter
T h=80°C
t SC
Tj≤ 150°C
6
µs
V CC
VGE= 15V
360
V
175
°C
Value
Unit
650
V
49
A
150
A
59
W
175
°C
T jmax
Conditions
Symbol
Neutral Point Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Copyright Vincotech
T j = T jmax
T j = T jmax
2
T h = 80°C
T h = 80°C
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
min 12,7
mm
8,95
mm
Isolation Properties
Isolation voltage
V isol
DC voltage
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
t p=2s
>200
CTI
3
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Characteristic Values
Half Bridge Switch
Parameter
Symbol
Conditions
Value
V GE [V] V CE [V] I C [A]
Unit
T j[ °C]
Min
Typ
Max
25
5,3
5,8
6,3
1,7
1,99
2,4
Static
Gate emitter threshold voltage
V GE(th)
VG E =VC E
0,003
125
25
Collec tor-emitter saturation voltage
15
V CEsat
80
Collec tor-emitter cut-off
I CES
0
1200
Gate-emitter leakage current
I GES
20
0
Integrated Gate resistor
R gint
Input capacitance
C ies
2,33
150
2,41
25
V
10
125
25
240
125
none
µA
nA
Ω
4660
f = 1MHz
Reverse transfer c apac itanc e
125
V
0
25
25
pF
260
C rss
Thermal
Thermal resistanc e c hip to heatsink
R th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
0,62
K/W
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 4 Ω
R gon = 4 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 2,1 µC
Q rFWD = 3,8 µC
4
350
50
25
125
25
125
25
125
25
125
25
125
25
125
77
79
11
14
180
242
48
76
0,524
0,980
1,314
2,275
ns
mWs
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Characteristic Values
Neutral Point Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,53
1,77
125
1,49
150
1,47
Static
Forward voltage
Reverse leakage current
75
VF
25
650
Ir
V
3,8
150
-
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
1,61
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Copyright Vincotech
Qr
di /dt = 5245 A/µs
±15
di /dt = 3680 A/µs
E rec
(di rf/dt )max
5
350
50
25
125
25
125
25
125
25
125
25
125
63
73
52
92
2,059
3,800
0,474
0,845
1198
852
A
ns
µC
mWs
A/µs
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Characteristic Values
Neutral Point Switch
Parameter
Symbol
Conditions
Value
V GE [V] V CE [V] I C [A]
Unit
T j[ °C]
Min
Typ
Max
25
5
5,8
6,5
1,45
1,85
Static
Gate emitter threshold voltage
V GE(th)
VG E =VC E
0,0012
125
25
Collec tor-emitter saturation voltage
Collec tor-emitter cut-off
15
V CEsat
0
I CES
1,05
125
1,59
150
1,64
25
600
3,8
25
Integrated Gate resistor
R gint
none
Input capacitance
C ies
4620
Output capacitance
C oss
Reverse transfer c apac itanc e
C rss
0
0
600
I GES
f=1 MHz
V
125
Gate-emitter leakage current
Gate c harge
20
75
125
25
25
288
V
µA
nA
Ω
pF
137
15
QG
480
75
25
470
nC
1,40
K/W
Thermal
Thermal resistanc e c hip to heatsink
R th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
25
t d(on)
tr
R goff = 4 Ω
R gon = 4 Ω
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
85
25
11
125
t d(off)
350
55
84
125
12
25
177
125
205
25
125
87
105
Q rFWD = 5,3 µC
25
Q rFWD = 8,2 µC
125
0,747
25
1,860
125
2,500
6
ns
0,528
mWs
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Characteristic Values
Half Bridge Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,73
2,05
125
1,70
150
1,68
Static
Forward voltage
Reverse leakage current
50
VF
25
1200
Ir
V
10
150
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
1,29
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Qr
25
106
125
118
25
102
125
di /dt = 6090 A/µs
±15
di /dt = 5325 A/µs
350
55
E rec
(di rf/dt )max
A
ns
148
25
5,316
125
8,219
25
1,551
125
2,418
25
6904
125
4951
µC
mWs
A/µs
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
22
-12
kΩ
+12
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100) Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
7
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
250
IC(A)
IC (A)
250
200
200
150
150
100
100
50
50
0
0
0
1
2
3
4
0
5
1
2
3
4
5
VCE (V)
VCE (V)
tp =
250
µs
V GE=
15
V
T j:
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
IGBT
µs
°C
Transient thermal impedance as a function of pulse width
I C = f(V CE)
IGBT
Z thJH = f(t p)
1
ZthJH (K/W)
IC (A)
80
70
60
50
0,1
40
30
0,5
0,2
0,1
20
0,05
0,02
0,01
10
0,005
0
0,01
1,00E-04
0
0
2
4
6
8
10
12
1,00E-03
1,00E-02
1,00E-01
tp =
100
µs
10
V
T j:
25 °C
D =
125 °C
R thJH =
150 °C
Copyright Vincotech
1,00E+01
1,00E+02
tp(s)
VCE (V)
V CE =
1,00E+00
tp / T
0,6
K/W
IGBT thermal model values
8
R (K/W)
Tau (s)
1,00E-01
1,75E+00
3,00E-01
2,50E-01
1,60E-01
6,33E-02
3,61E-02
6,32E-03
2,47E-02
3,87E-04
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Gate voltage vs Gate charge
IGBT
V GE = f(Q g)
VGE (V)
16
240V
14
960V
12
10
8
6
4
2
0
0
50
100
150
200
250
300
350
400
450
Qg (nC)
At
I C=
80
A
IGBT
Short circuit withstand time as a function of VGE
Typical short circuit collector current as a function of VGE
t sc = f(V GE)
I SC = f(V GE)
700
IC (sc)
45
tsc (µS)
IGBT
40
600
35
500
30
400
25
20
300
15
200
10
100
5
0
0
10
12
14
16
18
12
20
13
14
VGE(V)
16
17
18
VGE(V)
At
V CE =
600
V
At
V CE ≤
600
V
Tj ≤
150
ºC
Tj ≤
25
ºC
Copyright Vincotech
15
9
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
250
Z t h(j
h(j--s) (K/W)
IF (A)
101
200
100
150
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
50
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,61
K/W
150 °C
FWD thermal model values
Copyright Vincotech
10
R (K/W)
9,80E-02
τ (s)
5,80E+00
3,03E-01
8,55E-01
6,51E-01
1,83E-01
3,18E-01
4,73E-02
1,83E-01
1,14E-02
5,88E-02
1,69E-03
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Switch Characteristics
Typical output characteristics
IGBT
I C = f(V CE)
Typical output characteristics
IGBT
I C = f(V CE)
250
IC(A)
IC (A)
250
200
200
150
150
100
100
50
50
0
0
0
1
2
3
4
0
5
0,5
1
1,5
2
2,5
3
3,5
4
4,5
tp =
250
µs
V GE=
15
V
T j:
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
5
VCE (V)
VCE (V)
IGBT
I C = f(V CE)
µs
°C
Transient thermal impedance as a function of pulse width
IGBT
Z thJH = f(t p)
10
ZthJH (K/W)
IC (A)
75
60
1
45
30
0,5
0,1
0,2
0,1
0,05
15
0,02
0,01
0,005
0
0,01
1,00E-04
0
0
2
4
6
8
10
12
1,00E-03
1,00E-02
1,00E-01
tp =
100
µs
10
V
T j:
25 °C
D =
125 °C
R thJH =
150 °C
Copyright Vincotech
1,00E+01
1,00E+02
tp(s)
VCE (V)
V CE =
1,00E+00
tp / T
1,40
K/W
IGBT thermal model values
11
R (K/W)
Tau (s)
8,57E-02
4,79E+00
2,12E-01
8,67E-01
6,54E-01
1,48E-01
2,51E-01
4,86E-02
9,58E-02
9,17E-03
6,26E-02
6,32E-04
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Gate voltage vs Gate charge
IGBT
V GE = f(Q g)
VGE (V)
15
120V
480V
12,5
10
7,5
5
2,5
0
0
50
100
150
200
250
300
350
400
450
500
Qg (nC)
At
I C=
75
A
IGBT
Short circuit withstand time as a function of VGE
t sc = f(V GE)
IGBT
Typical short circuit collector current as a function of VGE
I SC = f(V GE)
1400
IC (sc)
tsc (µS)
14
12
1200
10
1000
8
800
6
600
4
400
2
200
0
0
10
11
12
13
14
12
15
13
14
15
VGE(V)
17
18
19
20
VGE(V)
At
V CE =
600
V
At
V CE ≤
600
V
Tj ≤
175
ºC
Tj ≤
175
ºC
Copyright Vincotech
16
12
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
150
Z t h(j
h(j--s) (K/W)
IF (A)
101
120
100
90
60
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
30
0
10-2
0
1
2
3
4
5
10-4
10-3
10-2
VF (V)
tp =
250
µs
10-1
100
101
102
t p (s)
25 °C
T j:
125 °C
D=
tp / T
150 °C
R th(j-s) =
1,29
K/W
FWD thermal model values
R (K/W)
7,18E-02
τ (s)
3,30E+00
3,55E-01
2,92E-01
6,00E-01
6,90E-02
1,46E-01
1,13E-02
5,33E-02
1,66E-03
6,20E-02
2,38E-04
Thermistor
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
13
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
4
2,5
E (mWs)
E ( mWs)
Typical swit ching energy losses as a f unct ion of collect or current
Eoff
Eoff
2
3
Eon
Eon
1,5
E off
Eo ff
2
Eon
1
E on
1
0,5
0
0
0
20
40
60
80
100
0
I C (A)
25 °C
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
T j:
4
8
12
125 °C
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
50
A
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
E ( mWs)
20
150 °C
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E (mWs)
R g ( Ω)
125 °C
T j:
Typical reverse recovered energy loss as a f unct ion of collect or current
1,6
16
25 °C
With an inductive load at
350
V
V CE =
1,2
Erec
1,2
0,9
0,8
0,6
Erec
Erec
Erec
0,3
0,4
-1,33E-15
0
0
20
40
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
4
Ω
Copyright Vincotech
60
80
I C (A)
0
100
25 °C
T j:
4
8
With an inductive load at
350
V
V CE =
125 °C
150 °C
V GE =
IC=
14
±15
V
50
A
12
16
r g (Ω)
20
25 °C
T j:
125 °C
150 °C
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
td(on)
td(on)
0,1
0,1
tf
tf
tr
tr
0,01
0,01
0,001
0,001
0
20
40
60
80
100
0
I C (A)
(A)
With an inductive load at
125
°C
Tj=
4
8
V CE =
350
V
V CE =
350
V
V GE =
±15
V
V GE =
±15
V
IC =
50
A
R gon =
4
Ω
R goff =
4
Ω
12
16
r g (Ω)
20
With an inductive load at
125
°C
Tj =
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,12
0,16
t rr (μs)
t rr (μs)
trr
trr
0,09
0,12
trr
0,06
0,08
0,03
0,04
0
0
0
20
40
60
80
100
0
I C (A)
At
trr
350
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
8
12
16
20
R g o n (Ω)
25 °C
T j:
4
At
V CE =
125 °C
V GE =
150 °C
IC=
15
350
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a f unct ion of collect or current
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
Q r (µC)
Q r (μC)
6
Qr
4,5
4
Qr
3
Qr
3
2
Qr
1,5
1
0
At
0
0
20
40
60
80
100
0
4
8
12
16
20
R g on (Ω)
I C (A)
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
VCE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
350
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
100
I R M (A)
I R M (A)
100
I RM
80
80
I RM
60
60
40
40
I RM
IRM
20
20
0
0
0
At
20
40
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
60
80
I C (A)
0
100
T j:
4
8
12
16
20
R go n (Ω)
25 °C
At
V CE =
125 °C
V GE =
150 °C
IC=
16
350
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
6000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
diF / dt
di r r /dt
5000
6000
di F / dt
di r r/ dt
5000
4000
4000
3000
3000
2000
2000
1000
1000
0
0
0
20
40
60
80
0
100
4
8
I C (A)
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
350
V
±15
V
50
A
12
16
20
R g o n (Ω)
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
180
I C MAX
160
I c CHIP
140
120
MODULE
100
80
Ic
60
V CE MAX
40
20
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
17
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
General conditions
=
125 °C
=
4Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
4Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
125
250
tdoff
%
IC
%
VCE
100
200
VGE 90%
VCE 90%
75
150
VGE
IC
50
100
VCE
tEoff
VGE
tdon
25
50
IC 1%
0
VGE 10%
0
VCE 3%
IC 10%
tEon
-25
-0,2
-0,05
0,1
0,25
0,4
0,55
-50
2,95
0,7
t (µs)
3
3,05
3,1
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
700
V
V C (100%) =
700
V
I C (100%) =
50
A
I C (100%) =
50
A
t doff =
0,242
µs
t don =
0,079
µs
t Eoff =
Figure 3.
0,615
µs
t Eon =
Figure 4.
0,214
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,15
3,2
3,25
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
250
%
fitted
IC
%
VCE
100
IC
200
IC 90%
75
150
IC 60%
VCE
50
100
IC 90%
tr
IC 40%
25
50
IC10%
0
tf
IC 10%
0
-25
0
0,1
0,2
0,3
0,4
0,5
-50
3,05
0,6
t (µs)
3,07
3,09
3,11
3,13
3,17
3,19
t (µs)
V C (100%) =
700
V
V C (100%) =
700
V
I C (100%) =
50
A
I C (100%) =
50
A
tf=
0,076
µs
tr =
0,014
µs
Copyright Vincotech
3,15
18
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
125
%
Poff
100
%
IC 1%
75
75
50
50
25
Eon
Pon
100
Eoff
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
tEon
-25
-25
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
2,9
3
3,1
3,2
P off (100%) =
35,05
kW
P on (100%) =
35,05
kW
E off (100%) =
2,28
mJ
E on (100%) =
0,98
mJ
t Eoff =
0,615
µs
t Eon =
0,214
µs
Figure 7.
3,3
3,4
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
0
IRRM 10%
Vd
-50
fitted
-100
-150
3,05
IRRM 90%
IRRM 100%
3,1
3,15
3,2
3,25
t (µs)
V d (100%) =
700
V
I d (100%) =
50
A
I RRM (100%) =
-73
A
t rr =
0,092
µs
Copyright Vincotech
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1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Id
Qrr
100
100
50
Erec
tErec
75
tQrr
0
50
-50
25
-100
0
Prec
-150
3
3,08
3,16
3,24
3,32
-25
3,4
3
t (µs)
3,1
3,2
3,4
t (µs)
I d (100%) =
50
A
P rec (100%) =
35,05
kW
Q rr (100%) =
3,80
µC
E rec (100%) =
0,85
mJ
t Qrr =
0,197
µs
t Erec =
0,197
µs
Copyright Vincotech
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1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
4
E (mWs)
E ( mWs)
Typical swit ching energy losses as a f unct ion of collect or current
3
Eoff
2,5
Eoff
Eon
3
Eo n
2
E o ff
Eo ff
2
1,5
1
Eon
1
Eo n
0,5
0
0
0
20
40
60
80
100
0
I C (A)
25 °C
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
T j:
2
4
6
8
125 °C
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
55
A
10
T j:
16
R g ( Ω)
FWD
E rec = f(I c)
E rec = f(r g )
E ( mWs)
3
Erec
2,5
3
18
125 °C
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E (mWs)
14
150 °C
Typical reverse recovered energy loss as a f unct ion of collect or current
4
12
25 °C
With an inductive load at
350
V
V CE =
Erec
2
1,5
2
Erec
Erec
1
1
0,5
0
0
0
20
40
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
4
Ω
Copyright Vincotech
60
80
I C (A)
0
100
25 °C
T j:
2
4
6
With an inductive load at
350
V
V CE =
125 °C
150 °C
V GE =
IC=
21
±15
V
55
A
8
10
12
14
16
r g (Ω)
18
25 °C
T j:
125 °C
150 °C
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(on)
td(off )
0,1
tf
0,1
tf
td(on)
tr
tr
0,01
0,01
0,001
0,001
0
10
20
30
40
50
60
70
80
90
100
0
I C (A)
(A)
With an inductive load at
125
°C
Tj=
2
4
6
8
10
12
14
16
r g (Ω)
18
With an inductive load at
125
°C
Tj =
V CE =
350
V
V CE =
350
V
V GE =
±15
V
V GE =
±15
V
R gon =
4
Ω
IC =
55
A
R goff =
4
Ω
Figure 7.
FWD
Figure 8.
FWD
t rr = f(I C)
t rr = f(R gon)
0,16
0,5
t rr (μs)
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr (μs)
Typical reverse recovery t ime as a f unct ion of collect or current
trr
trr
0,4
0,12
trr
0,3
trr
0,08
0,2
0,04
0,1
0
0
0
10
20
30
40
50
60
70
80
90
100
0
I C (A)
At
350
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
4
6
8
10
12
14
16
18
R g o n (Ω)
25 °C
T j:
2
At
V CE =
125 °C
V GE =
150 °C
IC=
22
350
V
±15
V
55
A
25 °C
T j:
125 °C
150 °C
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
12
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
12
Qr
9
Qr
9
6
6
Qr
Qr
3
3
0
At
0
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
I C (A)
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
VCE=
At
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
350
V
±15
V
55
A
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
160
18
R g on (Ω)
25 °C
I R M (A)
I R M (A)
160
I RM
IRM
120
120
80
80
IRM
IRM
40
40
0
0
0
At
20
40
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
60
80
I C (A)
0
100
4
6
8
10
12
14
16
18
R go n (Ω)
25 °C
T j:
2
At
V CE =
125 °C
V GE =
150 °C
IC=
23
350
V
±15
V
55
A
25 °C
T j:
125 °C
150 °C
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
12000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
10000
di F / dt
dir r/dt
8000
di F / dt
di r r/ dt
9000
6000
6000
4000
3000
2000
0
0
0
10
20
30
40
50
60
70
80
90
0
100
5
10
I C (A)
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
350
V
±15
V
55
A
15
20
R g o n (Ω)
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
180
I C MAX
I c CHIP
160
140
120
MODULE
100
Ic
80
60
V CE MAX
40
20
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
24
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Switching Characteristics
General conditions
=
125 °C
=
4Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
4Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
125
350
IC
%
%
300
tdoff
100
VCE
VCE 90%
VGE 90%
250
75
200
IC
50
VGE
150
tEoff
VGE
VCE
100
25
tdon
IC 1%
50
0
VCE 3%
IC 10%
VGE 10%
0
tEon
-25
-0,1
0
0,1
0,2
0,3
0,4
0,5
-50
2,95
0,6
t (µs)
3
3,05
3,1
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
56
A
I C (100%) =
56
A
t doff =
0,205
µs
t don =
0,085
µs
t Eoff =
Figure 3.
0,582
µs
t Eon =
Figure 4.
0,157
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,15
3,2
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
350
fitted
%
VCE
IC
IC
%
300
100
IC 90%
250
75
200
IC 60%
50
150
IC 40%
VCE
100
25
IC 90%
tr
IC10%
0
50
tf
IC 10%
0
-25
0
0,1
0,2
0,3
0,4
-50
0,5
3
t (µs)
3,05
3,1
3,2
t (µs)
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
56
A
I C (100%) =
56
A
tf=
0,105
µs
tr =
0,012
µs
Copyright Vincotech
3,15
25
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Switching Characteristics
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
125
%
%
IC 1%
Eoff
Poff
100
75
75
50
50
25
Eon
Pon
100
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEon
tEoff
-25
-25
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
2,9
3
3,1
P off (100%) =
19,56
kW
P on (100%) =
19,56
kW
E off (100%) =
2,50
mJ
E on (100%) =
0,75
mJ
t Eoff =
0,58
µs
t Eon =
0,16
µs
Figure 7.
3,2
3,3
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
fitted
0
IRRM 10%
-50
Vd
-100
-150
IRRM 90%
IRRM 100%
-200
-250
3
3,1
3,2
3,3
3,4
t (µs)
V d (100%) =
350
V
I d (100%) =
56
A
I RRM (100%) =
-118
A
t rr =
0,148
µs
Copyright Vincotech
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1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Neutral Point Switching Characteristics
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
150
150
%
%
Qrr
Id
100
Erec
100
50
tErec
50
tQrr
Prec
0
0
-50
-50
-100
-100
-150
3
3,2
3,4
3,6
3,8
4
-150
4,2
3
t (µs)
3,2
3,4
3,6
4
4,2
t (µs)
I d (100%) =
56
A
P rec (100%) =
19,56
kW
Q rr (100%) =
8,22
µC
E rec (100%) =
2,42
mJ
t Qrr =
1,00
µs
t Erec =
1,00
µs
Copyright Vincotech
3,8
27
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Ordering Code & Marking
Version
without thermal paste with Press-fit pins
Vinco WWYY
NNNNNNNVV UL
LLLLL SSSS
Ordering Code
10-PZ12NMA080SH23-M260F03Y
Text
Datamatrix
in DataMatrix as
M260F03Y
in packaging barcode as
M260F03Y
Vinco
Date code
Name&Ver
UL
Lot
Serial
Vinco
WWYY
NNNNNNNVV
UL
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table
Pin
X
Y
1
33,6
0
2
30,8
0
3
22
0
4
19,2
0
5
10,1
0
6
2,8
0
7
0
0
8
0
7,1
9
0
9,9
10
0
12,7
11
0
15,5
12
0
22,6
13
2,8
22,6
14
10,1
22,6
15
19,2
22,6
16
22
22,6
17
30,8
22,6
18
33,6
22,6
19
33,6
14,8
20
33,6
8,2
Copyright Vincotech
28
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1,T2
IGBT
1200V
80A
Half Bridge Switch
D1,D2
FWD
1200V
50A
Half Bridge Diode
T3,T4
IGBT
600V
75A
Neutral Point Switch
D3,D4
FWD
650V
75A
Neutral Point Diode
T
NTC
-
-
Thermistor
Copyright Vincotech
29
Comment
1 Jul. 2015 / Revision 1
10-PZ12NMA080SH23-M260F03Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
135
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.
Document No.:
Date:
10-PZ12NMA080SH23-M260F03Y-D1-14
1 Jul. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
1 Jul. 2015 / Revision 1
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