10-PY07N3A050SM- M896F04Y-T1-14

10-PY07N3A050SM- M896F04Y
target datasheet
flow 3xNPC 1
650 V / 50 A
Features
flow 1 housing
● Neutral-point-Clamped inverter
●
●
●
●
Ultra fast switching
Low Inductance layout
Very compact design
IGBT H5 and IGBT L5 technology
Schematic
Target Applications
● Solar inverters
● UPS
● SMPS
Types
● 10-PY07N3A050SM- M896F04Y
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
75
A
225
A
77
W
BOOST IGBT
Collector-emitter break down voltage
DC collector current
V CE
IC
Tj=Tjmax
Th=80°C
Pulsed collector current
I CRM
tp limited by Tjmax
Power dissipation
P tot
Tj=Tjmax
Gate-emitter peak voltage
V GE
±20
V
Maximum Junction Temperature
T jmax
175
°C
V RRM
650
V
20
A
40
A
34
W
175
°C
Th=80°C
BOOST IGBT Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
I FRM
Tvj<150°C
Power dissipation
P tot
Tj=Tjmax
Maximum Junction Temperature
T jmax
copyright Vincotech
1
Th=80°C
Th=80°C
21 Nov. 2014 / Revision 1
10-PY07N3A050SM- M896F04Y
target datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
35
A
150
A
90
A
63
W
Buck IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
V CE
IC
I CRM
Turn off safe operation area
Tj=Tjmax
Th=80°C
tp limited by Tjmax
VCE≤650V; TVj≤175°C
Tj=Tjmax
Th=80°C
Power dissipation
P tot
Gate-emitter peak voltage
V GE
±20
V
Maximum Junction Temperature
T jmax
175
°C
V RRM
650
V
29
A
120
A
52
W
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Th=80°C
tp limited by Tjmax
Repetitive peak forward current
I FRM
Power dissipation
P tot
Maximum Junction Temperature
T jmax
175
°C
V RRM
650
V
20
A
40
A
34
W
60Hz single half-sine wave
Tj=Tjmax
Th=80°C
BOOST Diode
Peak Repetitive Reverse Voltage
IF
Tj=Tjmax
Repetitive peak forward current
I FRM
Tvj<150°C
BOOST Diode
P tot
Tj=Tjmax
Maximum Junction Temperature
T jmax
175
°C
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching condition
T op
-40…+Tjmax - 25
°C
4000
VDC
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
DC forward current
Th=80°C
Th=80°C
Thermal Properties
Insulation Properties
Insulation voltage
copyright Vincotech
V is
t=2s
2
21 Nov. 2014 / Revision 1
10-PY07N3A050SM- M896F04Y
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
4,2
5
5,8
1,05
1,45
BOOST IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
V GE(th)
0,001
VCE=VGE
V CEsat
15
75
Collector-emitter cut-off current incl. Diode
I CES
0
650
Gate-emitter leakage current
I GES
20
0
Integrated Gate resistor
R gint
Turn-on delay time
t d(on)
Rise time
Turn-off delay time
tr
t d(off)
E on
Turn-off energy loss
E off
Input capacitance
C ies
300
75
Reverse transfer capacitance
C rss
Gate charge
QG
R th(j-s)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
mA
nA
Ω
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
ns
mWs
11625
f=1MHz
Thermal resistance chip to heatsink
±15
tf
Turn-on energy loss
100
none
Rgon=X Ω
Fall time
0,04
V
0
pF
Tj=25°C
25
30
Vcc=480 V
15
75
Tj=25°C
Thermal grease
thickness≤50um
λ = 1 W/mK
tbd
nC
1,20
K/W
BOOST Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
VF
20
I RRM
t rr
Q rr
Rgon=X Ω
300
±15
15
( di rf/dt )max
E rec
R th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
V GE(th)
VCE=VGE
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,23
1,55
1,87
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
V
A
ns
nC
A/µs
mWs
2,81
K/W
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
V CEsat
Collector-emitter cut-off incl diode
I CES
Gate-emitter leakage current
I GES
Integrated Gate resistor
R gint
Turn-on delay time
Rise time
Turn-off delay time
Fall time
15
0
650
20
0
t d(off)
tf
Turn-off energy loss
E off
Input capacitance
C ies
Reverse transfer capacitance
C rss
Gate charge
QG
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3,3
4
4,7
1
1,82
2
2,22
0,04
120
none
tr
E on
Rgon=X Ω
Rgoff=X Ω
f=1MHz
copyright Vincotech
50
t d(on)
Turn-on energy loss
Thermal resistance chip to heatsink
0,0005
±15
300
0
50
520
R th(j-s)
3
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
mA
nA
Ω
ns
ns
ns
ns
mWs
mWs
3000
pF
11
pF
120
nC
1,5
K/W
Tj=25°C
25
±15
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
V
50
Tj=25°C
21 Nov. 2014 / Revision 1
10-PY07N3A050SM- M896F04Y
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Tj
Min
Unit
Typ
Max
2,46
2,03
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
2,6
Buck Diode
Diode forward voltage
Peak reverse recovery current
VF
I RRM
Reverse recovery time
t rr
Reverse recovered charge
Q rr
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink
30
Rgon=X Ω
±15
300
15
( di rf/dt )max
E rec
R th(j-s)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Thermal grease
thickness≤50um
λ =1 W/mK
V
A
ns
nC
A/µs
mWs
1,80
K/W
Boost IGBT Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
VF
10
Tj=25°C
Tj=125°C
1,23
R th(j-s)
1,55
1,87
V
2,81
K/W
21511
Ω
Thermistor
Rated resistance
Tj=25°C
R
Deviation of R100
Δ R/R
Power dissipation
P
R100=1486 Ω
T=100°C
Power dissipation constant
-4,5
+4,5
Tj=25°C
210
mW
T=25°C
3,5
mW/K
K
B-value
B (25/50)
T=25°C
3884
B-value
B (25/100)
T=25°C
3964
Vincotech NTC Reference
copyright Vincotech
%
K
F
4
21 Nov. 2014 / Revision 1
10-PY07N3A050SM- M896F04Y
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Standard in flow1 12mm housing
Ordering Code
in DataMatrix as
10-PY07N3A050SM- M896F04Y
M896F04Y
in packaging barcode as
M896F04Y
Outline
Pinout
copyright Vincotech
5
21 Nov. 2014 / Revision 1
10-PY07N3A050SM- M896F04Y
target datasheet
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are
presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete
and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any
changes without further notice to any products to improve reliability, function or design. No representation, guarantee
or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application
or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or
that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and
determine the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the
express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labelling can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
6
21 Nov. 2014 / Revision 1
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