10 PZ07NIA075S5 P926F53Y T1 14

10-PZ07NIA075S5-P926F53Y
target datasheet
flow NPC 0
650 V / 75 A
Features
flow 0 12mm housing
● Three-level topology
● High efficient with latest chip technology
● Low inductive package
Schematic
Target applications
● Solar
Types
● 10-PZ07NIA075S5-P926F53Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
650
V
62
A
225
A
86
W
Buck Switch
Collector-emitter voltage
Collector current
VCES
IC
Tj = Tjmax
Ts = 80 °C
Repetitive peak collector current
ICRM
tp limited by Tjmax
Total power dissipation
Ptot
Tj = Tjmax
Gate-emitter voltage
VGES
±20
V
Maximum junction temperature
Tjmax
175
°C
Copyright Vincotech
Ts = 80 °C
1
25 Apr. 2016 / Revision 1
10-PZ07NIA075S5-P926F53Y
target datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
650
V
59
A
150
A
78
W
Buck Diode
Peak Repetitive Reverse Voltage
VRRM
Continuous (direct) forward current
IF
Tj = Tjmax
Ts = 80 °C
Repetitive peak forward current
IFRM
Total power dissipation
Ptot
Maximum Junction Temperature
Tjmax
175
°C
VCES
650
V
89
A
225
A
99
W
Tj = Tjmax
Ts = 80 °C
Boost Switch
Collector-emitter voltage
Collector current
IC
Tj = Tjmax
Ts = 80 °C
Repetitive peak collector current
ICRM
tp limited by Tjmax
Total power dissipation
Ptot
Tj = Tjmax
Gate-emitter voltage
VGES
±20
V
Maximum junction temperature
Tjmax
175
°C
VRRM
650
V
50
A
100
A
64
W
175
°C
650
V
48
A
100
A
70
W
175
°C
Ts = 80 °C
Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
IF
Repetitive peak forward current
IFRM
Total power dissipation
Ptot
Maximum Junction Temperature
Tjmax
Tj = Tjmax
Ts = 80 °C
Tj = Tjmax
Ts = 80 °C
Boost Sw. Protection Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
VRRM
IF
Repetitive peak forward current
IFRM
Total power dissipation
Ptot
Maximum Junction Temperature
Tjmax
Copyright Vincotech
Tj = Tjmax
Ts = 80 °C
Tj = Tjmax
Ts = 80 °C
2
25 Apr. 2016 / Revision 1
10-PZ07NIA075S5-P926F53Y
target datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Tjop
-40…(Tjmax - 25)
°C
4000
V
min. 12,7
mm
9
mm
Isolation Properties
Isolation voltage
Visol
DC Test Voltage
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
CTI
tp = 2 s
> 200
3
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10-PZ07NIA075S5-P926F53Y
target datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Unit
Min
Typ
Max
3,2
4
4,8
1,42
1,55
1,75
Buck Switch
Static
Gate-emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCEsat
VGE = VCE
0,00075 25
15
75
25
125
V
V
Collector-emitter cut-off current
ICES
0
650
25
50
µA
Gate-emitter leakage current
IGES
20
0
25
100
nA
Internal gate resistance
rg
none
Input capacitance
Cies
4500
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
Qg
f = 1 MHz
0
25
25
Ω
130
pF
17
15
520
75
25
164
nC
1,11
K/W
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
Buck Diode
Static
Forward voltage
Reverse leakage current
75
VF
650
Ir
25
1,53
125
1,49
150
1,47
25
1,77
V
3,8
µA
Thermal
Thermal resistance junction to sink
Copyright Vincotech
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,23
4
K/W
25 Apr. 2016 / Revision 1
10-PZ07NIA075S5-P926F53Y
target datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Unit
Min
Typ
Max
4,2
5
5,8
V
1,05
1,45
V
Boost Switch
Static
Gate-emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCEsat
VGE = VCE
0,001
15
25
75
25
Collector-emitter cut-off current
ICES
0
650
25
40
µA
Gate-emitter leakage current
IGES
20
0
25
100
nA
Internal gate resistance
rg
Input capacitance
Cies
none
11625
f = 1 MHz
Reverse transfer capacitance
Ω
0
25
25
pF
30
Cres
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
0,96
K/W
Boost Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
50
650
25
125
150
1,35
1,32
1,28
25
1,77
V
2,65
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,48
K/W
Boost Sw. Protection Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
50
650
25
125
1,63
1,54
25
1,9
27
V
µA
Thermal
Thermal resistance junction to sink
Copyright Vincotech
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,36
5
K/W
25 Apr. 2016 / Revision 1
10-PZ07NIA075S5-P926F53Y
target datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Typ
Unit
Max
Thermistor
Rated resistance
R
Deviation of R100
ΔR/R
Power dissipation
25
R100 = 1484 Ω
100
P
Power dissipation constant
22
-5
kΩ
5
%
25
5
mW
25
1,5
mW/K
B-value
B(25/50)
Tol. ±1 %
25
3962
K
B-value
B(25/100)
Tol. ±1 %
25
4000
K
Vincotech NTC Reference
Copyright Vincotech
I
6
25 Apr. 2016 / Revision 1
10-PZ07NIA075S5-P926F53Y
target datasheet
Ordering Code & Marking
Version
without thermal paste with Press-fit pins 12mm housing
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Ordering Code
10-PZ07NIA075S5-P926F53Y
Text
Datamatrix
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
33,6
0
G12
2
30,8
0
S12
3
22
0
DC-
4
19,2
0
DC-
5
10,1
0
GND
6
2,8
0
S14
7
0
0
G14
8
0
7,1
Ph
9
0
9,9
Ph
10
0
12,7
Ph
11
12
0
0
15,5
22,6
Ph
G13
13
2,8
22,6
S13
14
10,1
22,6
GND
15
19,2
22,6
DC+
16
22
22,6
DC+
17
30,8
22,6
S11
18
33,6
22,6
G11
19
33,6
14,8
Therm1
20
33,6
8,2
Therm2
21
22
Not assembled
Not assembled
Copyright Vincotech
7
25 Apr. 2016 / Revision 1
10-PZ07NIA075S5-P926F53Y
target datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11,T12
IGBT
650 V
75 A
Buck Switch
D11,D12
FWD
650 V
75 A
Buck Diode
T13,T14
IGBT
650 V
75 A
Boost Switch
D13,D14
FWD
650 V
50 A
Boost Diode
D43,D44
FWD
650 V
50 A
Boost Sw. Protection Diode
Rt
Thermistor
Copyright Vincotech
Comment
Thermistor
8
25 Apr. 2016 / Revision 1
10-PZ07NIA075S5-P926F53Y
target datasheet
Packaging instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
10-PZ07NIA075S5-P926F53Y-T1-14
25 Apr. 2016
Modification:
Pages
Product status definition
Datasheet Status
Product Status
Target
Formative or In Design
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
9
25 Apr. 2016 / Revision 1
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