10 xY07NPA150SM01 L364F08x D3 14

10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
flow NPC 1
650 V / 150 A
Features
flow 1 12mm housing
● NPC inverter topology
● Optimized for full rated bi-directional usage
(4 quadrant operation)
● High-speed IGBT in all switch positions
● NTC
● Low inductive design with integrated DC capacitor
● flow 1 12mm package
Solder Pin
Press-fit
Schematic
Target applications
● Solar inverter
● UPS
Types
● 10-FY07NPA150SM01-L364F08
● 10-PY07NPA150SM01-L364F08Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
83
A
450
A
128
W
Buck Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S =80 °C
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
650
V
Buck Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
T j = T jmax
T h = 80°C
68
A
Total power dissipation
P tot
T j = T jmax
T h = 80°C
112
W
Maximum Junction Temperature
T jmax
175
°C
Value
Unit
650
V
150
A
450
A
164
W
Parameter
Condition
Symbol
Out. Boost Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Value
Unit
650
V
82
A
200
A
106
W
175
°C
Parameter
T S =80 °C
Conditions
Symbol
Out. Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Copyright Vincotech
T j = T jmax
T j = T jmax
2
T s = 80°C
T s = 80°C
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
650
V
121
A
200
A
203
W
175
°C
Value
Unit
V MAX
630
V
T op
-55…+125
°C
Value
Unit
Out. Boost Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T h = 80°C
T j = T jmax
T h = 80°C
Conditions
Symbol
DC Link Capacitor
Maximum DC voltage
Operation Temperature
Parameter
Symbol
Conditions
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
Isolation Properties
Isolation voltage
AC voltage RMS
tp = 60s
2500
V
DC voltage
t p = 2s
6000
V
min 12,7
mm
8,07 \ 7,86
mm
Vi sol
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
solder pin \ Press-fit
>200
CTI
3
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Characteristic Values
Buck Switch
Parameter
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A] T j[ °C]
Unit
Min
Typ
Max
3,3
4
4,7
25
1,70
2,22
125
1,88
150
1,93
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
V GE=V CE
0,0015
15
150
Collec tor-emitter cut-off c urrent
I CES
0
650
Gate-emitter leakage current
I GES
20
0
Internal gate resistance
25
125
25
80
240
125
rg
none
Input capacitance
C ies
8600
Output capacitance
C oes
Reverse transfer c apac itanc e
C res
Gate c harge
f=1 MHz
0
V
125
25
25
25
150
V
µA
nA
Ω
pF
32
0
Qg
0
0
25
332
nC
0,74
K/W
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
t d(on)
R goff = 2 Ω
Rise time
Turn-off delay time
tr
R gon = 2 Ω
t d(off)
±15
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Copyright Vincotech
tf
E on
Q rFWD = 1,5 µC
Q rFWD = 3,7 µC
Q rFWD = 4,8 µC
E off
4
350
90
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
46
46
45
11
13
14
130
147
152
7
7
7
0,563
0,931
1,051
0,361
0,641
0,732
ns
mWs
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
2,50
2,6
125
2,19
Static
Forward voltage
VF
Reverse leakage current
Ir
100
25
650
20
V
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,85
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
Copyright Vincotech
di /dt = 7366 A/µs
di /dt = 6200 A/µs ±15
di /dt = 6600 A/µs
E rec
(di rf/dt )max
5
350
90
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
88
121
131
22
70
81
1,457
3,718
4,777
0,274
0,796
1,054
14960
6659
6303
A
ns
µC
mWs
A/µs
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switch
Parameter
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A] T j[ °C]
Unit
Min
Typ
Max
4,2
5
5,8
1,10
1,45
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
V GE=V CE
0,002
25
125
25
15
150
125
150
Collec tor-emitter cut-off c urrent
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
I CES
20
I GES
Gate c harge
80
125
25
0
200
125
none
rg
µA
nA
Ω
23250
C ies
f=1 MHz
Reverse transfer c apac itanc e
V
1,09
25
650
V
0
25
25
pF
60
C res
15
Qg
520
75
25
872
nC
0,58
K/W
Thermal
Thermal resistanc e junction to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
t d(on)
R goff = 2 Ω
Rise time
Turn-off delay time
tr
R gon = 2 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 3,2 µC
Q rFWD = 5,9 µC
Q rFWD = 6,7 µC
6
350
88
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
95
94
94
7
9
9
356
397
412
74
73
65
0,450
0,682
0,849
4,431
6,677
7,032
ns
mWs
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,50
1,77
125
1,43
150
1,40
Static
Forward voltage
Reverse leakage current
100
VF
25
650
Ir
V
5,3
150
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
0,90
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
Copyright Vincotech
di /dt = 8581 A/µs
di /dt = 8320 A/µs ±15
di /dt = 7500 A/µs
E rec
(di rf/dt )max
7
350
88
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
103
130
137
51
86
94
3,178
5,859
6,736
0,763
1,449
1,630
2631
2254
2303
A
ns
µC
mWs
A/µs
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Inverse Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,77
1,82
150
1,57
Static
Forward voltage
VF
Reverse leakage current
Ir
100
25
650
1,2
V
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,47
K/W
Value
Unit
DC Link Capacitor
Parameter
Symbol
Conditions
T j[°C]
Capacitance
Min
Typ
Max
200
C
Tolerance
-10
nF
+10
%
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
8
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
400
I C (A)
I C (A)
400
300
300
200
200
100
100
0
0
0
1
2
tp =
250
µs
V GE =
15
V
3
T j:
4
V C E (V)
0
5
1
2
4
5
V C E (V)
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
8 V to 17 V in steps of 1 V
Typical transfer characteristics
3
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
150
Z t h(j
h(j--s)(K/W)
I C (A)
100
120
90
10-1
60
0,5
0,2
0,1
0,05
30
0,02
0,01
0,005
0
10-2
10-5
0
0
1
2
3
4
5
6
7
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
T j:
25 °C
D =
125 °C
R th(j-s) =
150 °C
10
101
t p (s)
102
tp / T
0,74
K/W
IGBT thermal model values
R th (K/W)
Copyright Vincotech
10-1
9
1,09E-01
τ (s)
1,94E+00
2,21E-01
2,60E-01
2,87E-01
6,98E-02
8,43E-02
8,29E-03
3,94E-02
3,67E-04
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q G)
Safe operating area
IGBT
I C = f(V CE)
I C (A)
1000
V G E (V)
15
130V
520V
12,5
100
10
10
7,5
5
1
2,5
0
0,1
0
20
40
60
80
100
120
140
160
180
1
10
Q G (nC)
1000
V C E (V)
At
I C=
100
At
150
Copyright Vincotech
A
10
D =
single pulse
Th =
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
300
Z t h( jj--s) (K/W)
IF (A)
100
250
200
10-1
150
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
50
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,85
K/W
150 °C
FWD thermal model values
Copyright Vincotech
11
R (K/W)
9,18E-02
τ (s)
3,34E+00
1,92E-01
6,05E-01
3,65E-01
1,19E-01
1,13E-01
2,58E-02
5,25E-02
4,68E-03
3,80E-02
8,67E-04
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switch Characteristics
Typical output characteristics
IGBT
I C = f(V CE)
Typical output characteristics
IGBT
I C = f(V CE)
500
I C (A)
I C (A)
500
400
400
300
300
200
200
100
100
0
0
0
0,5
1
tp =
250
µs
V GE =
15
V
1,5
2
T j:
2,5
V C E (V)
0
3
0,5
1
2
2,5
V C E (V)
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
1,5
IGBT
I C = f(V GE)
µs
°C
Transient Thermal Impedance as function of Pulse duration
IGBT
Z th(j-s) = f(t p)
120
Z t h(j
h(j--s)(K/W)
I C (A)
100
90
10-1
60
0,5
10-2
0,2
0,1
30
0,05
0,02
0,01
0,005
0
10-3
10-5
0
0
2
4
6
8
10
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
T j:
25 °C
D =
125 °C
R th(j-s) =
150 °C
100
101
t p (s)
102
tp / T
0,58
K/W
IGBT thermal model values
R th (K/W)
Copyright Vincotech
10-1
12
1,24E-01
τ (s)
1,33E+00
2,59E-01
1,40E-01
1,21E-01
4,38E-02
5,87E-02
9,56E-03
1,74E-02
1,21E-03
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
17,5
1000
130V
15
IGBT
I C (A)
I C = f(V CE)
V G E (V)
V GE = f(Q G)
520V
100
12,5
10
10
7,5
5
1
2,5
0
0,1
0
200
400
600
800
1000
1
1200
10
Q G (nC)
1000
V C E (V)
At
I C=
100
At
150
Copyright Vincotech
A
13
D =
single pulse
Th =
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
300
Z t h( jj--s) (K/W)
IF (A)
100
250
200
10-1
150
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
50
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,90
K/W
150 °C
FWD thermal model values
Copyright Vincotech
14
R (K/W)
7,42E-02
τ (s)
3,64E+00
1,41E-01
5,85E-01
3,41E-01
1,04E-01
1,94E-01
2,64E-02
9,09E-02
6,04E-03
5,85E-02
5,72E-04
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Inverse Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
300
Z t h(j
h(j--s) (K/W)
IF (A)
100
250
200
10-1
150
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
50
10-2
0
0
1
2
3
10-4
4
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,47
K/W
150 °C
FWD thermal model values
R (K/W)
4,73E-02
τ (s)
4,12E+00
6,76E-02
9,18E-01
1,01E-01
1,37E-01
1,41E-01
3,83E-02
6,28E-02
8,98E-03
4,92E-02
1,99E-03
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
15
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
2
E (mWs)
E ( mWs)
Typical swit ching energy losses as a f unct ion of collect or current
1,6
2
Eon
Eon
1,5
Eon
Eon
Eoff
1,2
Eoff
1
Eon
Eo n
0,8
Eoff
Eoff
E o ff
0,5
0,4
Eo ff
0
0
10
30
50
70
90
110
130
150
170
0
I C (A)
25 °C
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
2
Ω
R goff =
2
Ω
125 °C
T j:
1
2
3
4
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
90
A
5
T j:
E rec = f(r g )
E ( mWs)
E (mWs)
9
125 °C
1,2
Erec
0,9
Erec
R g ( Ω)
FWD
E rec = f(I c)
1,2
8
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
7
150 °C
Typical reverse recovered energy loss as a f unct ion of collect or current
1,6
6
25 °C
With an inductive load at
350
V
V CE =
Erec
0,6
0,8
Erec
0,3
0,4
Erec
0
0
10
30
50
70
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
2
Ω
Copyright Vincotech
90
110
130
150
I C (A)
0
170
25 °C
T j:
1
2
3
With an inductive load at
350
V
V CE =
125 °C
150 °C
V GE =
IC=
16
±15
V
90
A
4
5
6
7
8
r g (Ω)
9
25 °C
T j:
125 °C
150 °C
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
0,1
0,1
td(on)
td(on)
tr
tr
0,01
0,01
tf
tf
0,001
0,001
10
30
50
70
90
110
130
150
170
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
1
2
3
V CE =
350
V
V CE =
350
V
V GE =
±15
V
V GE =
±15
V
IC =
90
A
R gon =
2
Ω
R goff =
2
Ω
4
5
6
Figure 7.
FWD
8
9
r g (Ω)
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,12
t rr (μs)
t rr (μs)
0,12
trr
trr
0,09
0,09
0,06
0,06
0,03
trr
trr
0,03
trr
trr
0
0
10
30
50
70
90
110
130
150
170
0
I C (A)
At
7
With an inductive load at
150
°C
Tj =
350
V
V GE =
±15
V
R gon =
2
Ω
V CE=
Copyright Vincotech
2
3
4
5
6
7
8
9
R g o n (Ω)
25 °C
T j:
1
At
V CE =
125 °C
V GE =
150 °C
IC=
17
350
V
±15
V
90
A
25 °C
T j:
125 °C
150 °C
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
8
5
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
Qr
Qr
4
6
Qr
Qr
3
4
2
Qr
2
Qr
1
0
At
0
10
30
50
70
90
110
130
150
170
0
1
2
3
4
5
6
7
8
I C (A)
350
V
V GE =
±15
V
R gon =
2
Ω
At
V CE =
25 °C
T j:
At
VCE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
350
V
±15
V
90
A
9
R g on (Ω)
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
160
I R M (A)
I R M (A)
160
IRM
IR M
120
120
IRM
IRM
IRM
80
80
I RM
40
40
0
0
10
At
30
50
70
350
V
V GE =
±15
V
R gon =
2
Ω
V CE =
Copyright Vincotech
90
110
130
150
I C (A)
0
170
2
3
4
5
6
7
8
9
R go n (Ω)
25 °C
T j:
1
At
V CE =
125 °C
V GE =
150 °C
IC=
18
350
V
±15
V
90
A
25 °C
T j:
125 °C
150 °C
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
20000
di F / dt
dir r/dt
16000
di F / dt
di r r/ dt
15000
12000
10000
8000
5000
4000
0
0
10
30
50
70
90
110
130
150
0
170
2
4
6
8
I C (A)
350
V
V GE =
±15
V
R gon =
2
Ω
At
V CE =
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
350
V
±15
V
90
A
10
R g o n (Ω)
25 °C
T j:
125 °C
150 °C
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
350
I C MAX
I c CHIP
300
250
MODULE
200
Ic
150
V CE MAX
100
50
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
2
Ω
R goff =
2
Ω
Tj =
Copyright Vincotech
19
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switching Definition
General conditions
=
125 °C
=
2Ω
Without internal capacitor
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
2Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
200
300
%
%
IC
150
200
tdoff
100
VCE 90%
VGE 90%
100
VGE
VCE
IC
50
tdon
tEoff
VCE
0
IC 1%
0
VGE 10%
VCE 3%
IC 10%
VGE
tEon
-50
-0,05
0
0,05
0,1
0,15
-100
2,96
0,2
t (µs)
3
3,04
3,08
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
20
V
V GE (100%) =
20
V
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
89
A
I C (100%) =
89
A
t doff =
t Eoff =
0,147
0,165
µs
µs
t don =
t Eon =
0,046
0,126
µs
µs
Figure 3.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,12
Figure 4.
3,16
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
150
250
VCE
%
%
125
200
fitted
IC
100
IC 90%
150
75
VCE
IC 60%
100
50
50
25
IC10%
0
-25
0,12
IC
tf
0,14
0,16
IC 10%
0
0,18
-50
3,01
0,2
t (µs)
3,023
3,036
3,049
3,062
3,075
t (µs)
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
89
A
I C (100%) =
89
A
tf=
0,007
µs
tr =
0,013
µs
Copyright Vincotech
IC 90%
tr
IC 40%
20
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switching Definition
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
125
%
%
IC 1%
100
Eon
100
Eoff
Poff
75
75
50
50
25
Pon
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
-25
-0,01
0,04
0,09
tEon
0,14
-25
2,97
0,19
3
3,03
3,06
P off (100%) =
31,13
kW
P on (100%) =
31,13
kW
E off (100%) =
0,64
mJ
E on (100%) =
0,93
mJ
t Eoff =
0,16
µs
t Eon =
0,13
µs
Figure 7.
3,09
3,12
3,15
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
Id
%
100
trr
50
0
fitted
Vd
IRRM 10%
-50
-100
-150
3,02
IRRM 90%
IRRM 100%
3,06
3,1
3,14
3,18
t (µs)
V d (100%) =
350
V
I d (100%) =
89
A
I RRM (100%) =
-121
A
t rr =
0,070
µs
Copyright Vincotech
21
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switching Definition
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Id
Qrr
100
Erec
100
50
75
tQrr
Prec
0
50
-50
25
-100
0
-150
3,01
3,08
3,15
3,22
3,29
-25
3,01
3,36
t (µs)
tErec
3,08
3,15
3,22
3,36
t (µs)
I d (100%) =
89
A
P rec (100%) =
31,13
kW
Q rr (100%) =
3,72
µC
E rec (100%) =
0,80
mJ
t Qrr =
0,14
µs
t Erec =
0,14
µs
Copyright Vincotech
3,29
22
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of collect or current
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
E (mWs)
E ( mWs)
12
Eoff
Eoff
9
8
Eoff
Eoff
6
E o ff
Eoff
6
4
3
2
Eon
Eon
Eo n
Eon
Eon
E on
0
10
30
50
70
90
110
130
0
150
170
0
I C (A)
25 °C
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
2
Ω
R goff =
2
Ω
125 °C
T j:
1
2
3
4
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
88
A
5
T j:
E rec = f(r g )
E ( mWs)
E (mWs)
R g ( Ω)
9
125 °C
FWD
E rec = f(I c)
Erec
8
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
7
150 °C
Typical reverse recovered energy loss as a f unct ion of collect or current
2,5
6
25 °C
With an inductive load at
350
V
V CE =
2
2
Erec
1,5
Erec
1,5
1
Erec
1
Erec
0,5
0,5
0
0
10
30
50
70
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
2
Ω
Copyright Vincotech
90
110
130
150
I C (A)
0
170
25 °C
T j:
1
2
3
With an inductive load at
350
V
V CE =
125 °C
150 °C
V GE =
IC=
23
±15
V
88
A
4
5
6
7
8
r g (Ω)
9
25 °C
T j:
125 °C
150 °C
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
td(on)
tf
td(on)
0,1
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
10
30
50
70
90
110
130
150
170
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
1
2
3
4
5
6
7
8
9
r g (Ω)
With an inductive load at
150
°C
Tj =
V CE =
350
V
V CE =
350
V
V GE =
±15
V
V GE =
±15
V
R gon =
2
Ω
IC =
88
A
R goff =
2
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,16
t rr (μs)
t rr (μs)
0,12
trr
trr
0,12
trr
0,09
trr
0,08
0,06
trr
trr
0,04
0,03
0
0
10
30
50
70
90
110
130
150
170
0
I C (A)
At
350
V
V GE =
±15
V
R gon =
2
Ω
V CE=
Copyright Vincotech
2
3
4
5
6
7
8
9
R g o n (Ω)
25 °C
T j:
1
At
V CE =
125 °C
V GE =
150 °C
IC=
24
350
V
±15
V
88
A
25 °C
T j:
125 °C
150 °C
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
12
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
8
Qr
Qr
9
6
Qr
Qr
6
4
Qr
Qr
3
2
0
At
0
10
30
50
70
90
110
130
150
170
0
1
2
3
4
5
6
7
8
I C (A)
350
V
V GE =
±15
V
R gon =
2
Ω
V CE =
At
25 °C
T j:
VCE=
At
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
350
V
±15
V
88
A
9
R g on (Ω)
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
160
I R M (A)
I R M (A)
160
IRM
IR M
120
120
IRM
IRM
IRM
IRM
80
80
40
40
0
0
10
At
30
50
70
350
V
V GE =
±15
V
R gon =
2
Ω
V CE =
Copyright Vincotech
90
110
130
150
I C (A)
0
170
2
3
4
5
6
7
8
9
R go n (Ω)
25 °C
T j:
1
At
V CE =
125 °C
V GE =
150 °C
IC=
25
350
V
±15
V
88
A
25 °C
T j:
125 °C
150 °C
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
12000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
12000
di F / dt
dir r/dt
di F / dt
di r r/ dt
9000
9000
6000
6000
3000
3000
0
0
10
30
50
70
90
110
130
150
0
170
2
4
6
8
I C (A)
350
V
V GE =
±15
V
R gon =
2
Ω
V CE =
At
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
350
V
±15
V
88
A
10
R g o n (Ω)
25 °C
T j:
125 °C
150 °C
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
350
I C MAX
I c CHIP
300
250
MODULE
200
Ic
150
V CE MAX
100
50
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
2
Ω
R goff =
2
Ω
Tj =
Copyright Vincotech
26
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switching Definitons
General conditions
=
125 °C
=
2Ω
Without internal capacitor
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
2Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
250
125
tdoff
%
%
VCE
IC
200
100
VCE 90%
VGE 90%
150
75
IC
VGE
100
VCE
50
tdon
tEoff
50
25
IC 10%
VGE 10%
0
IC 1%
VCE 3%
VGE
tEon
0
-50
-25
-0,1
0,1
0,3
0,5
0,7
-100
2,98
0,9
t (µs)
3,01
3,04
3,07
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
20
V
V GE (100%) =
20
V
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
90
A
I C (100%) =
90
A
t doff =
t Eoff =
0,397
0,848
µs
µs
t don =
t Eon =
0,094
0,120
µs
µs
Figure 3.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,1
3,13
Figure 4.
3,16
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
250
fitted
%
%
VCE
IC
100
200
IC 90%
75
150
IC 60%
50
100
IC 40%
VCE
25
tr
IC 90%
50
IC10%
0
tf
0
IC 10%
IC
-25
0,1
0,3
0,5
0,7
-50
3,09
0,9
t (µs)
3,099
3,108
3,117
3,135
3,144
t (µs)
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
90
A
I C (100%) =
90
A
tf=
0,073
µs
tr =
0,009
µs
Copyright Vincotech
3,126
27
13 Nov. 2015 / Revision 3
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datasheet
Out. Boost Switching Definitons
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
250
125
%
%
200
Pon
100
Eon
Poff
150
75
Eoff IC 1%
100
50
50
25
VCE 3%
VGE 10%
VGE 90%
0
0
tEon
tEoff
-25
-50
-0,1
0,1
0,3
0,5
0,7
3
0,9
3,03
3,06
3,09
P off (100%) =
31,42
kW
P on (100%) =
31,42
kW
E off (100%) =
6,68
mJ
E on (100%) =
0,68
mJ
t Eoff =
0,85
µs
t Eon =
0,12
µs
Figure 7.
3,12
3,15
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
Id
%
100
trr
50
fitted
0
IRRM 10%
Vd
-50
-100
IRRM 90%
IRRM 100%
-150
-200
3,1
3,125
3,15
3,175
3,2
3,225
t (µs)
V d (100%) =
350
V
I d (100%) =
90
A
I RRM (100%) =
-130
A
t rr =
0,086
µs
Copyright Vincotech
28
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switching Definitons
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
300
150
%
%
Id
Qrr
tQrr
50
Prec
250
100
200
150
0
Erec
100
tErec
-50
50
-100
0
-150
3,08
3,13
3,18
3,23
3,28
-50
3,08
3,33
t (µs)
3,13
3,18
3,23
3,33
t (µs)
I d (100%) =
90
A
P rec (100%) =
31,42
kW
Q rr (100%) =
5,86
µC
E rec (100%) =
1,45
mJ
t Qrr =
0,17
µs
t Erec =
0,17
µs
Copyright Vincotech
3,28
29
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with solder pins
without thermal paste 12mm housing with Press-fit pins
Ordering Code
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
NN-NNNNNNNNNNNNNN
TTTTTTTVV WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTTVV
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
52,2
6,9
Therm1
2
52,2
0
Therm2
3
36,2
6,75
S4
4
33,2
7,9
G14
5
33,2
4,9
G18
6
9,2
5,75
S2
7
6,2
6,9
G12
8
6,2
3,9
G16
9
2,7
0
DC-
10
0
0
DC-
11
12
13
2,7
0
2,7
2,7
2,7
5,4
DCDC-
14
0
5,4
DC-
15
2,7
12,75
GND
16
0
12,75
GND
17
2,7
15,45
GND
18
0
15,45
19
2,7
22,8
GND
DC+
20
0
22,8
DC+
21
2,7
25,5
DC+
Pin
X
Y
22
0
25,5
DC+
30
46
24
Function
G13
23
2,7
28,2
DC+
31
52,2
20,1
Ph
24
0
28,2
DC+
32
49,5
22,8
Ph
25
18,3
22,45
S1
33
52,2
22,8
Ph
26
21,3
21,3
G15
34
49,5
25,5
Ph
27
21,3
24,3
G11
28
43
22,15
S3
29
46
21
G17
35
36
37
52,2
49,5
52,2
25,5
28,2
28,2
Ph
Ph
Ph
Copyright Vincotech
DC-
Pin table [mm]
30
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11,T12,T15,T16
IGBT
650V
75A
Buck Switch
D11, D12
FWD
650V
100A
Buck Diode
T13,T14,T17,T18
IGBT
650V
75A
Out. Boost Switch
D13,D14,D17,D18
FWD
650V
50A
Out. Boost Diode
D43,D44,D47,D48
FWD
650V
50A
Out. Boost Inverse Diode
C1,C2
Capacitor
630V
-
DC Link Capacitor
Rt
NTC
-
-
Thermistor
Copyright Vincotech
31
Comment
13 Nov. 2015 / Revision 3
10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY07NPA150SM01-L364F08-D3-14
13 Nov. 2015
Added Press-fit option
1, 30
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
13 Nov. 2015 / Revision 3
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