10 xY07NPA200SM02 L366F08x D3 14

10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
flow NPC 1
650 V / 200 A
Features
flow 1 12mm housing
● NPC inverter topology
● Optimized for full rated bi-directional usage
(4 quadrant operation)
● High-speed IGBT in all switch positions
● NTC
● Low inductive design with integrated DC capacitor
● flow 1-12mm package
Solder Pin
Press-fit
Schematic
Target applications
● Solar
● UPS
Types
● 10-FY07NPA200SM02-L366F08
● 10-PY07NPA200SM02-L366F08Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
94
A
600
A
145
W
Buck Switch / Out. Boost Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S =80 °C
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
650
V
107
A
400
A
131
W
175
°C
Value
Unit
650
V
124
A
400
A
164
W
175
°C
Value
Unit
V MAX
500
V
T op
-55…+125
°C
Value
Unit
Buck Diode\Out. Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T h = 80°C
T j = T jmax
T h = 80°C
Conditions
Symbol
Out. Boost Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
IFRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T h = 80°C
T j = T jmax
T h = 80°C
Conditions
Symbol
DC Link Capacitor
Maximum DC voltage
Operation Temperature
Parameter
Symbol
Conditions
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
Isolation Properties
Isolation voltage
AC voltage RMS
tp = 60s
2500
V
DC voltage
t p = 2s
6000
V
min 12,7
mm
8,07 \ 7,86
mm
Vi sol
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
solder pin \ Press-fit
>200
CTI
2
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Characteristic Values
Buck Switch
Parameter
Symbol
Conditions
Value
V GE [V] V CE [V] I C [A] T j[ °C]
Unit
Min
Typ
Max
3,2
4
4,8
25
1,69
2,1
125
1,86
150
1,96
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
V GE(th)
V GE=V CE
0,002
15
V CEsat
200
Collec tor-emitter c ut-off current
I CES
0
650
Gate-emitter leakage c urrent
I GES
20
0
Internal gate resistance
25
125
25
200
200
125
rg
none
Input capacitance
C ies
13120
Output capacitance
C oes
Reverse transfer capac itance
C res
Gate c harge
f=1 MHz
0
V
125
25
25
25
194
V
µA
nA
Ω
pF
42
15
Qg
520
200
25
420
nC
0,65
K/W
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 4 Ω
R gon = 4 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 4,6 µC
Q rFWD = 9,1 µC
3
350
120
25
125
25
125
25
125
25
125
25
125
25
125
67
66
11
12
158
174
7
9
1,101
1,637
0,576
0,922
ns
mWs
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,65
2,65
125
1,60
150
1,58
Static
Forward voltage
Reverse leakage c urrent
200
VF
25
650
Ir
V
10,6
150
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,73
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Copyright Vincotech
Qr
di /dt = 9293 A/µs
±15
di /dt = 7591 A/µs
E rec
(di rf/dt )max
4
350
120
25
125
25
125
25
125
25
125
25
125
114
160
59
91
4,639
9,105
0,966
1,930
3621
2111
A
ns
µC
mWs
A/µs
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switch
Parameter
Symbol
Conditions
Value
V GE [V] V CE [V] I C [A] T j[ °C]
Unit
Min
Typ
Max
3,2
4
4,8
25
1,69
2,1
125
1,86
150
1,96
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
V GE=V CE
0,002
15
200
Collec tor-emitter c ut-off current
I CES
0
650
Gate-emitter leakage c urrent
I GES
20
0
Internal gate resistance
25
125
25
200
200
125
rg
none
Input capacitance
C ies
13120
Output capacitance
C oes
Reverse transfer capac itance
C res
Gate c harge
f=1 MHz
0
V
125
25
25
25
194
V
µA
nA
Ω
pF
42
15
Qg
520
200
25
420
nC
0,65
K/W
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 4 Ω
R gon = 4 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 4,5 µC
Q rFWD = 9,2 µC
5
350
120
25
125
25
125
25
125
25
125
25
125
25
125
76
62
12
14
153
171
7
12
1,709
2,573
0,542
1,009
ns
mWs
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,65
2,65
125
1,60
150
1,58
Static
Forward voltage
Reverse leakage c urrent
200
VF
25
650
Ir
V
10,6
150
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,73
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Copyright Vincotech
Qr
di /dt = 6472 A/µs
±15
di /dt = 5169 A/µs
E rec
(di rf/dt )max
6
350
120
25
125
25
125
25
125
25
125
25
125
91
129
70
103
4,495
9,160
0,800
1,676
2015
1571
A
ns
µC
mWs
A/µs
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Inverse Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,77
1,9
125
1,69
150
1,66
Static
Forward voltage
Reverse leakage c urrent
200
VF
25
650
Ir
V
54
150
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,58
K/W
Value
Unit
DC Link Capacitor
Parameter
Symbol
Conditions
T j[°C]
Capacitance
Min
Typ
Max
300
C
Tolerance
-10
nF
+10
%
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
7
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switch\ Out. Boost Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
600
I C (A)
I C (A)
600
500
500
400
400
300
300
200
200
100
100
0
0
0
1
2
tp =
250
µs
V GE =
15
V
3
T j:
4
V C E (V)
0
5
1
2
4
5
V C E (V)
25 °C
tp =
250
125 °C
Tj =
125
150 °C
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
3
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
200
Z t h( jj--s)(K/W)
I C (A)
101
150
100
100
10-1
0,5
0,2
0,1
10-2
50
0,05
0,02
0,01
0,005
0
10-3
0
0
2
4
6
10-5
8
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
0
V
T j:
25 °C
D =
125 °C
R th(j-s) =
150 °C
10
101
t p (s)
102
tp / T
0,65
K/W
IGBT thermal model values
R th (K/W)
Copyright Vincotech
10-1
8
7,51E-02
τ (s)
3,22E+00
1,27E-01
5,51E-01
3,27E-01
1,11E-01
7,19E-02
2,69E-02
3,44E-02
6,17E-03
1,81E-02
5,82E-04
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switch\ Out. Boost Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
V GE = f(Q G)
IGBT
I C = f(V CE)
1000
I C (A)
V G E (V)
15
130V
520V
12,5
100
10
7,5
10
5
1
2,5
0
0,1
0
50
100
150
200
1
250
10
Q G (nC)
1000
V C E (V)
At
I C=
100
At
200
Copyright Vincotech
A
9
D =
single pulse
Th =
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Diode\Out. Boost Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
600
Z t h(j
h(j--s) (K/W)
IF (A)
100
500
400
10-1
300
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
200
100
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,73
K/W
150 °C
FWD thermal model values
Copyright Vincotech
10
R (K/W)
8,64E-02
τ (s)
3,05E+00
1,38E-01
6,75E-01
3,34E-01
1,25E-01
1,06E-01
3,99E-02
4,34E-02
6,89E-03
1,90E-02
7,34E-04
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Inverse Diode Characteristics
Diode
Typical forward characteristics
I F = f(V F )
Transient thermal impedance as a function of pulse width
Diode
Z th(j-s) = f(t p)
600
Z t h(j
h(j--s) (K/W)
IF (A)
100
500
400
10-1
300
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
200
100
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,58
K/W
150 °C
Diode thermal model values
R (K/W)
5,80E-02
τ (s)
8,20E+00
8,03E-02
1,08E+00
1,46E-01
1,95E-01
2,11E-01
6,41E-02
6,77E-02
1,10E-02
1,80E-02
2,03E-03
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
11
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
2
E ( mWs)
E (mWs)
Typical swit ching energy losses as a f unction of collector current
Eon
5
Eon
4
Eo n
1,5
3
E on
1
Eoff
2
Eo ff
E o ff
0,5
Eoff
1
0
0
0
20
40
60
80
100
120
140
0
I C (A)
25 °C
With an induc tive load at
350
V
V CE =
±15
V
V GE =
R gon =
4
Ω
R goff =
4
Ω
T j:
2
4
6
8
120
IC =
Figure 3.
FWD
T j:
R g ( Ω)
E rec = f(r g )
E (mWs)
18
125 °C
FWD
E rec = f(I c)
E (mWs)
16
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
14
A
Typical reverse recovered energy loss as a f unction of collector current
2
12
25 °C
With an inductive load at
350
V
V CE =
±15
V
V GE =
125 °C
10
2,5
2
1,5
1,5
Erec
Erec
1
1
0,5
Erec
0,5
0
0
0
20
40
With an induc tive load at
350
V
V CE =
±15
V
V GE =
R gon =
4
Copyright Vincotech
60
80
100
120
I C (A)
0
140
25 °C
T j:
2
4
6
With an inductive load at
350
V
V CE =
±15
V
V GE =
125 °C
Ω
IC=
12
120
8
10
12
14
16
r g (Ω)
18
25 °C
T j:
125 °C
A
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(off )
td(off )
td(on)
0,1
0,1
td(on)
tr
tr
tf
0,01
0,01
tf
0,001
0,001
0
20
40
60
80
100
120
140
0
(A)
I C (A)
With an induc tive load at
125
°C
Tj=
350
V
V CE =
2
4
6
8
10
12
16
r g (Ω)
18
With an inductive load at
125
°C
Tj=
350
V
V CE =
V GE =
±15
V
V GE =
±15
V
R gon =
4
Ω
IC =
120
A
R goff =
4
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unction of collector current
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,1
t rr (μs)
t rr (μs)
0,15
trr
0,08
trr
0,12
trr
trr
0,06
0,09
0,04
0,06
0,02
0,03
0
0
0
20
40
60
80
100
120
140
0
I C (A)
At
14
350
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
4
6
8
10
12
14
16
18
R g on (Ω)
25 °C
T j:
2
At
125 °C
13
350
V
V GE =
±15
V
IC=
120
A
V CE =
25 °C
T j:
125 °C
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
10
Q r (µC)
Q r (μ C)
Typical recovered charge as a f unction of collector current
Qr
10
Qr
8
8
6
6
Qr
4
4
2
2
0
At
Qr
0
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
14
16
I C (A)
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
FWD
V
V GE =
±15
V
I C=
120
A
VCE=
125 °C
Figure 11.
350
T j:
125 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
200
18
R g o n (Ω)
25 °C
I R M (A)
I R M (A)
250
I RM
200
150
IRM
150
100
I RM
100
IRM
50
50
0
0
0
At
20
40
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
60
80
100
120
I C (A)
0
140
4
6
8
10
12
14
16
18
R g o n (Ω)
25 °C
T j:
2
At
125 °C
14
350
V
V GE =
±15
V
IC=
120
A
V CE =
25 °C
T j:
125 °C
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
18000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
15000
diF / dt
di r r /dt
di F / dt
di r r/ dt
15000
12000
12000
9000
9000
6000
6000
3000
3000
0
0
0
20
40
60
80
100
120
0
140
2
4
6
8
10
12
I C (A)
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
125 °C
Figure 15.
350
V
V GE =
±15
V
I C=
120
A
V CE =
14
16
18
R g o n (Ω)
25 °C
T j:
125 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C MAX
400
I c CHIP
I C (A)
450
350
300
MODULE
250
Ic
200
150
V CE MAX
100
50
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
15
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Definitions
General conditions
=
125 °C
=
4Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
4Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
175
250
%
%
IC
150
200
125
tdoff
VCE
150
100
VCE 90%
VGE 90%
75
VCE
100
IC
VGE
VGE
tdon
50
tEoff
50
25
VGE 10%
VCE 3%
IC 10%
0
IC 1%
0
tEon
-25
-0,05
0
0,05
0,1
0,15
0,2
0,25
0,3
-50
2,95
0,35
2,99
3,03
3,07
3,11
3,15
t (µs)
3,19
t (µs)
0
V
V GE (100%) =
20
V
V C (100%) =
350
V
I C (100%) =
120
A
I C (100%) =
t doff =
0,174
µs
t don =
0,066
µs
t Eoff =
Figure 3.
0,188
µs
t Eon =
Figure 4.
0,154
µs
V GE (0%) =
0
V
V GE (100%) =
20
V
V C (100%) =
350
V
120
A
V GE (0%) =
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
175
250
%
IC
%
150
200
VCE
125
fitted
IC
150
100
IC 90%
VCE
75
100
IC 90%
IC 60%
50
IC 40%
tr
50
25
-25
0,15
IC10%
tf
0
0,17
0,19
0,21
0,23
IC 10%
0
0,25
-50
0,27
3
t ( µs)
3,03
3,06
3,09
V
V C (100%) =
350
I C (100%) =
120
A
I C (100%) =
120
A
tf=
0,009
µs
tr =
0,012
µs
Copyright Vincotech
3,12
3,15
3,18
t (µs)
350
V C (100%) =
16
V
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
125
%
%
IC 1%
Eoff
100
Eon
100
Pon
75
75
50
50
25
25
VGE 90%
VCE 3%
VGE 10%
Poff
0
0
tEon
tEoff
-25
2,95
-25
0
0,05
0,1
0,15
0,2
0,25
0,3
3
3,05
3,1
P off (100%) =
41,86
kW
P on (100%) =
41,86
kW
E off (100%) =
0,92
mJ
E on (100%) =
1,64
mJ
t Eoff =
0,188
µs
t Eon =
0,154
µs
Figure 7.
3,15
3,2
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
Id
100
trr
50
fitted
Vd
0
IRRM 10%
-50
-100
IRRM 90%
IRRM 100%
-150
3
3,05
3,1
3,15
3,2
3,25
3,3
t (µs)
V d (100%) =
350
V
I d (100%) =
120
A
I RRM (100%) =
-160
A
t rr =
0,091
µs
Copyright Vincotech
17
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Buck Switching Definitions
Figure 8.
FWD
Figure 9.
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
125
150
%
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
%
Id
Erec
Qrr
100
100
tQrr
50
75
0
50
-50
25
-100
0
tErec
Prec
-150
2,95
3,03
3,11
3,19
3,27
-25
2,95
3,35
t (µs)
3,03
3,11
3,19
3,27
3,35
t (µs)
I d (100%) =
120
A
P rec (100%) =
41,86
kW
Q rr (100%) =
9,11
µC
E rec (100%) =
1,93
mJ
t Qrr =
0,18
µs
t Erec =
0,18
µs
BUCK IGBT
BOOST FRED
T11-T15
BOOST IGBT
-15V
BUCK FRED
3*470uF
VDC
Vcc
Vce
D11
47kohm
47kohm
700
T13-T17
-15V
V
L2
V
115uH
T14-T18
3*470uF
D12
+15V
Vge
L
1mH
V
T12-T16
A
0.00001
Q
Q
+15V
0.000003
Q
Q
Rgon
Rgoff
-15V
Q
Q
Copyright Vincotech
18
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
3
E ( mWs)
E (mWs)
Typical swit ching energy losses as a f unction of collector current
Eon
2,5
2
6
Eon
5
Eo n
4
Eon
1,5
3
1
Eoff
Eoff
E off
0,5
Eo ff
2
1
0
0
0
20
40
60
80
100
120
140
0
I C (A)
25 °C
With an induc tive load at
350
V
V CE =
±15
V
V GE =
R gon =
4
Ω
R goff =
4
Ω
T j:
2
4
6
8
120
IC =
Figure 3.
FWD
T j:
16
R g ( Ω)
FWD
E rec = f(I c)
E rec = f(r g )
2
2,5
E (mWs)
18
125 °C
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E (mWs)
14
A
Typical reverse recovered energy loss as a f unction of collector current
Erec
12
25 °C
With an inductive load at
350
V
V CE =
±15
V
V GE =
125 °C
10
2
1,5
1,5
Erec
1
Erec
1
0,5
Erec
0,5
0
0
0
20
40
With an induc tive load at
350
V
V CE =
±15
V
V GE =
R gon =
4
Copyright Vincotech
60
80
100
120
I C (A)
0
140
25 °C
T j:
2
4
6
With an inductive load at
350
V
V CE =
±15
V
V GE =
125 °C
Ω
IC=
19
120
8
10
12
14
16
r g (Ω)
18
25 °C
T j:
125 °C
A
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(off )
td(off )
td(on)
0,1
0,1
td(on)
tr
tr
0,01
tf
0,01
tf
0,001
0,001
0
20
40
60
80
100
120
140
0
I C (A)
(A)
With an induc tive load at
125
°C
Tj=
350
V
V CE =
2
4
6
8
10
12
14
16
r g (Ω)
18
With an inductive load at
125
°C
Tj=
350
V
V CE =
V GE =
±15
V
V GE =
±15
V
R gon =
4
Ω
IC =
120
A
R goff =
4
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unction of collector current
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,12
t rr (μs)
t r r (μs)
0,15
trr
trr
0,1
0,12
trr
0,08
trr
0,09
0,06
0,06
0,04
0,03
0,02
0
0
0
20
40
60
80
100
120
140
0
I C (A)
At
350
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
4
6
8
10
12
14
16
18
R g on (Ω)
25 °C
T j:
2
At
125 °C
20
350
V
V GE =
±15
V
IC=
120
A
V CE =
25 °C
T j:
125 °C
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
10
Q r (µC)
Q r (μ C)
Typical recovered charge as a f unction of collector current
Qr
10
8
8
6
6
Qr
Qr
4
4
Qr
2
2
0
At
0
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
14
16
I C (A)
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
FWD
V
V GE =
±15
V
I C=
120
A
VCE=
125 °C
Figure 11.
350
T j:
125 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
150
18
R g o n (Ω)
25 °C
I R M (A)
I R M (A)
180
IR M
150
120
120
IRM
90
90
IRM
60
60
IRM
30
30
0
0
0
At
20
40
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
60
80
100
120
I C (A)
0
140
4
6
8
10
12
14
16
18
R g o n (Ω)
25 °C
T j:
2
At
125 °C
21
350
V
V GE =
±15
V
IC=
120
A
V CE =
25 °C
T j:
125 °C
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
12000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
10000
diF / dt
di r r /dt
8000
di F / dt
di r r/ dt
9000
6000
6000
4000
3000
2000
0
0
0
20
40
60
80
100
120
0
140
2
4
6
8
10
12
I C (A)
350
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
125 °C
Figure 15.
350
V
V GE =
±15
V
I C=
120
A
V CE =
14
16
18
R g o n (Ω)
25 °C
T j:
125 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C MAX
400
I c CHIP
I C (A)
450
350
300
250
M ODULE
200
Ic
150
V CE MAX
100
50
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
22
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Definitions
General conditions
=
125 °C
=
4Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
4Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
175
250
%
%
IC
150
200
125
tdoff
VCE
150
100
VCE 90%
VGE 90%
VCE
75
100
IC
VGE
VGE
tdon
50
tEoff
50
25
VGE 10%
IC 1%
VCE 3%
IC 10%
0
0
tEon
-25
-0,05
0
0,05
0,1
0,15
0,2
0,25
0,3
-50
2,95
0,35
2,99
3,03
3,07
3,11
3,15
3,19
t (µs)
0
V
V GE (100%) =
20
V
V C (100%) =
350
V
I C (100%) =
120
A
t doff =
0,171
t Eoff =
Figure 3.
0,189
V GE (0%) =
3,23
t (µs)
0
V
V GE (100%) =
20
V
V C (100%) =
350
V
I C (100%) =
120
A
µs
t don =
0,062
µs
µs
t Eon =
Figure 4.
0,165
µs
V GE (0%) =
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
150
250
%
IC
%
125
fitted
IC
200
VCE
100
IC 90%
150
75
VCE
IC 60%
100
50
IC 90%
tr
IC 40%
50
25
IC10%
0
IC 10%
0
tf
-25
0,12
0,145
0,17
0,195
0,22
-50
3,03
0,245
t ( µs)
V
V C (100%) =
I C (100%) =
120
A
tf=
0,012
µs
Copyright Vincotech
3,06
3,09
3,12
3,15
3,18
3,21
t (µs)
350
V C (100%) =
23
350
V
I C (100%) =
120
A
tr =
0,014
µs
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
125
%
IC 1%
100
%
Eoff
Pon
Eon
100
75
75
50
50
25
25
VGE 90%
VCE 3%
VGE 10%
Poff
0
0
tEon
tEoff
-25
-0,05
0
0,05
0,1
0,15
0,2
-25
2,95
0,25
3
3,05
3,1
P off (100%) =
42,14
kW
P on (100%) =
42,14
kW
E off (100%) =
1,01
mJ
E on (100%) =
2,57
mJ
t Eoff =
0,189
µs
t Eon =
0,165
µs
Figure 7.
3,15
3,2
3,25
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
Id
100
trr
50
Vd
fitted
IRRM 10%
0
-50
IRRM 90%
IRRM 100%
-100
-150
3
3,05
3,1
3,15
3,2
3,25
3,3
t (µs)
V d (100%) =
350
I d (100%) =
120
A
I RRM (100%) =
-129
A
t rr =
0,103
µs
Copyright Vincotech
V
24
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Definitions
Figure 8.
FWD
Figure 9.
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
125
150
%
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
%
Id
Erec
Qrr
100
100
tQrr
50
75
0
50
-50
25
-100
0
tErec
Prec
-150
3,03
3,09
3,15
3,21
3,27
-25
2,95
3,33
t (µs)
3,03
3,11
3,19
3,27
3,35
t (µs)
I d (100%) =
120
A
P rec (100%) =
42,14
kW
Q rr (100%) =
9,16
µC
E rec (100%) =
1,68
mJ
t Qrr =
0,20
µs
t Erec =
0,20
µs
BUCK IGBT
BOOST FRED
T11-T15
BOOST IGBT
VDC
+350V
-15V
T13-T17
+15V
BUCK FRED
Vcc
Vce
D11
Ic
V
L2
V
A
T14-T18
115uH
D12
T12-T16
-15V
V Vge
0.00001
0.000003
Q
Q
Q
Q
+15V
Rgon
Rgoff
-15V
Q
Q
Copyright Vincotech
25
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with Solder pins
without thermal paste 12mm housing with Press-fit pins
Ordering Code
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
NN-NNNNNNNNNNNNNN
TTTTTTTVV WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTTVV
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
52,2
6,9
Therm1
2
52,2
0
Therm2
3
36,2
6,75
S4
4
33,2
7,9
G14
5
33,2
4,9
G18
6
9,2
5,75
S2
7
6,2
6,9
G12
8
6,2
3,9
G16
9
2,7
0
DC-
10
0
0
DC-
11
12
13
2,7
0
2,7
2,7
2,7
5,4
DCDC-
14
0
5,4
DC-
15
2,7
12,75
GND
16
0
12,75
GND
17
2,7
15,45
GND
18
0
15,45
19
2,7
22,8
GND
DC+
20
0
22,8
DC+
21
2,7
25,5
DC+
Pin
X
Y
22
0
25,5
DC+
30
46
24
Function
G13
23
2,7
28,2
DC+
31
52,2
20,1
Ph
24
0
28,2
DC+
32
49,5
22,8
Ph
25
18,3
22,45
S1
33
52,2
22,8
Ph
26
21,3
21,3
G15
34
49,5
25,5
Ph
27
21,3
24,3
G11
28
43
22,15
S3
29
46
21
G17
35
36
37
52,2
49,5
52,2
25,5
28,2
28,2
Ph
Ph
Ph
Copyright Vincotech
DC-
Pin table [mm]
26
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11,T12,T15,T16
IGBT
650V
100A
Buck Switch
D11,D12
FWD
650V
200A
Buck Diode
T13,T14,T17,T18
IGBT
650V
100A
Out. Boost Switch
D13,D14,D17,D18
FWD
650V
100A
Out. Boost Diode
D43,D44,D47,D48
FWD
650V
100A
Out. Boost Inverse Diode
C1,C2
Capacitor
500V
-
DC Link Capacitor
Rt
NTC
-
-
Thermistor
Copyright Vincotech
27
Comment
16 Nov. 2015 / Revision 3
10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY07NPA200SM02-L366F08-D3-14
16 Nov. 2015
Added Press-fit option
1, 30
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
16 Nov. 2015 / Revision 3
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