V23990-P763-A-PM datasheet 600 V / 50 A flow PIM 2 3rd Features flow 2 housing ● 3~rectifier,BRC,Inverter, NTC ● Very Compact housing, easy to route ● IGBT3/ EmCon3 technology for low saturation losses and improved EMC behavior Target Applications Schematic ● Motor Drives ● Power Generation Types ● V23990-P763-A-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 80 80 A 700 A 2450 A 2s 95 144 W Tjmax 150 °C VCE 600 V 60 75 A 100 A 115 175 W ±20 V 6 360 µs V 175 °C Input Rectifier Diode Repetitive peak reverse voltage VRRM Forward current IFAV Surge forward current IFSM I2t-value I2 t Power dissipation Ptot Maximum Junction Temperature DC current Th=80°C Tc=80°C tp=10ms Tj=25°C Tj=Tjmax Th=80°C Tc=80°C Inverter IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current IC ICpulse Power dissipation Ptot Gate-emitter peak voltage VGE Short circuit ratings Maximum Junction Temperature copyright Vincotech tSC VCC Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Tj≤150°C VGE=15V Tjmax 1 Th=80°C Tc=80°C 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V 52 70 A 100 A 85 129 W Tjmax 175 °C VCE 600 V 30 30 A 90 A 84 128 W ±20 V 6 360 µs V Tjmax 175 °C VRRM 600 V Inverter FWD Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Brake IGBT Collector-emitter break down voltage DC collector current IC Tj=Tjmax Repetitive peak collector current ICpuls tp limited by Tjmax Power dissipation Ptot Tj=Tjmax Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Tj≤150°C VGE=15V Brake Inverse Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Brake Inverse Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C 15 15 A 40 A 54 82 W Tjmax 175 °C VRRM 600 V Th=80°C Tc=80°C Brake FWD Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation Ptot Tj=Tjmax Th=80°C Tc=80°C 28 30 A 40 A 51 78 W Tjmax 175 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+Tjmax-25 °C Maximum Junction Temperature Th=80°C Tc=80°C Thermal properties copyright Vincotech 2 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 4000 VDC Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation properties Insulation voltage copyright Vincotech Vis t=1min 3 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Min Unit Typ Max 1,11 1,04 0,91 0,78 0,004 0,005 1,7 Input Rectifier Diode Forward voltage VF Threshold voltage (for power loss calc. only) Vto Slope resistance (for power loss calc. only) rt Reverse current Ir Thermal resistance chip to heatsink RthJH Thermal resistance chip to case RthJC 50 1500 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C V Ω 0,05 1,1 Thermal grease thickness≤50µm λ = 0,61 W/m·K V mA 0,74 K/W 0,49 Inverter IGBT Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) VCE=VGE 0,0008 15 50 Collector-emitter cut-off current incl. Diode ICES 0 600 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time Rise time Turn-off delay time Fall time tr tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink RthJH Thermal resistance chip to case RthJC Coupled thermal resistance transistor-transistor RthJHT-T Coupled thermal resistance diode-transistor RthJHD-T 5 5,8 6,5 1,5 1,7 2,1 0,35 700 none td(on) td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Rgoff=8 Ω Rgon=8 Ω ±15 300 50 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω 105 106 13 17 161 188 105 126 0,49 0,72 1,27 1,81 ns mWs 3140 f=1MHz 25 0 Tj=25°C 200 pF 90 ±15 480 50 Tj=25°C nC 310 0,82 Thermal grease thickness≤50µm λ = 0,61 W/m·K 0,54 K/W 0,12 0,2 Inverter FWD Diode forward voltage Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current VF IRRM trr Qrr Erec Thermal resistance chip to heatsink RthJH Thermal resistance chip to case RthJC copyright Vincotech Rgon=8 Ω ±15 300 di(rec)max /dt Reverse recovered energy Coupled thermal resistance transistor-diode 50 50 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,42 1,29 52 76,8 118 146 2,06 4,37 3668 3903 0,53 0,99 2,1 V A ns µC A/µs mWs 1,12 Thermal grease thickness≤50µm λ = 0,61 W/m·K 0,74 RthJHT-D K/W 0,18 4 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 1,5 1,77 2 Brake IGBT Gate emitter threshold voltage Collector-emitter saturation voltage VGE(th) VCE=VGE VCE(sat) 0,00043 15 30 Collector-emitter cut-off incl diode ICES 0 600 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink RthJH Thermal resistance chip to case RthJC 0,14 400 none tr td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Rgoff=16 Ω Rgon=16 Ω ±15 300 30 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω 96 98 14 18 141 170 103 121 0,38 0,51 0,71 0,98 ns mWs 1630 f=1MHz 0 25 ±15 480 Tj=25°C 108 Tj=25°C 167 pF 50 30 Thermal grease thickness≤50µm λ = 0,61 W/m·K nC 1,13 K/W 0,74 Brake Inverse Diode Diode forward voltage VF Thermal resistance chip to heatsink RthJH Thermal resistance chip to case RthJC 10 Tj=25°C Tj=150°C 1,2 Thermal grease thickness≤50µm λ = 0,61 W/m·K 1,85 1,88 2,1 V 1,77 K/W 1,17 K/W Brake FWD Diode forward voltage VF Reverse leakage current Ir Peak reverse recovery current ±15 300 30 IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current 20 Rgon=16 Ω ±15 300 di(rec)max /dt 30 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Reverse recovery energy Erec Thermal resistance chip to heatsink RthJH Thermal resistance chip to case RthJC Thermal grease thickness≤50µm λ = 0,61 W/m·K Rated resistance R25 Tol. ±5% Tj=25°C Deviation of R100 DR/R R100=1486.1Ω Tc=100°C 1,66 1,6 2,1 140 30 33 22 146 0,47 1,81 4805 2381 0,21 0,42 V µA A ns µC A/µs mWs 1,82 K/W 1,20 Thermistor Power dissipation given Epcos-Typ B-value copyright Vincotech P B(25/100) Tol. ±3% 5 20,9 22 23,1 kΩ 2,9 %/K Tj=25°C 210 mW Tj=25°C 4000 K 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Output Inverter Figure 1 Typical output characteristics IC = f(VCE) Output inverter IGBT Figure 2 Typical output characteristics IC = f(VCE) 150 IC (A) IC (A) 150 Output inverter IGBT 125 125 100 100 75 75 50 50 25 25 0 0 0 1 2 3 4 VCE (V) 5 0 At tp = Tj = 2 3 4 VCE (V) 5 At tp = Tj = 250 µs 25 °C VGE from 7 V to 17 V in steps of 1 V Figure 3 Typical transfer characteristics Ic = f(VGE) 1 250 µs 150 °C VGE from 7 V to 17 V in steps of 1 V Output inverter IGBT Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) 150 IC (A) IF (A) 60 Output inverter FWD 50 125 40 100 30 75 Tj = Tjmax-25°C 20 50 Tj = Tjmax-25°C Tj = 25°C 10 Tj = 25°C 25 0 0 0 At tp = VCE = 3 250 10 copyright Vincotech 6 9 V GE (V) 12 0 At tp = µs V 6 0,5 1 250 µs 1,5 2 2,5 VF (V) 3 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Output Inverter Output inverter IGBT Figure 6 Typical switching energy losses as a function of gate resistor E = f(RG) 3 Output inverter IGBT 2,5 E (mWs) E (mWs) Figure 5 Typical switching energy losses as a function of collector current E = f(Ic) Eoff 2,5 Eon Eoff 2 Eon Eoff 2 Eoff 1,5 1,5 Eon 1 1 Eon: 0,5 0,5 0 0 0 20 40 60 80 I C (A) 100 0 With an inductive load at Tj = 25/150 °C 25/150 VCE = 300 V VGE = ±15 V Rgon = 8 Ω Rgoff = 8 Ω 8 16 24 32 RG(Ω) 40 With an inductive load at Tj = 25/150 °C 25/150 VCE = 300 V VGE = ±15 V IC = 50 A Figure 7 Typical reverse recovery energy loss as a function of collector current Erec = f(Ic) Output inverter IGBT Figure 8 Typical reverse recovery energy loss as a function of gate resistor Erec = f(RG) E (mWs) 1 E (mWs) 1,5 Output inverter IGBT Erec 1,2 Erec 0,8 0,9 0,6 Erec 0,6 0,4 0,3 0,2 0 Erec 0 0 20 40 60 80 I C (A) 100 0 With an inductive load at Tj = 25/150 25/150 °C VCE = 300 V VGE = ±15 V Rgon = 8 Ω copyright Vincotech 8 16 24 32 RG(Ω) 40 With an inductive load at Tj = 25/150 25/150 °C VCE = 300 V VGE = ±15 V IC = 50 A 7 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Output Inverter Figure 10 Typical switching times as a function of gate resistor t = f(RG) 1 1 t ( µs) Output inverter IGBT t ( µs) Figure 9 Typical switching times as a function of collector current t = f(IC) Output inverter IGBT tdoff tdon tdoff tdon 0,1 tf 0,1 tf tr tr 0,01 0,01 0,001 0,001 0 20 40 60 80 I C (A) 100 0 With an inductive load at Tj = 150 °C VCE = 300 V VGE = ±15 V Rgon = 8 Ω Rgoff = 8 Ω 8 16 24 RG (Ω ) 32 40 With an inductive load at Tj = 150 °C VCE = 300 V VGE = ±15 V IC = 50 A Figure 11 Typical reverse recovery time as a function of collector current trr = f(Ic) Output inverter FWD Figure 12 Typical reverse recovery time as a function of IGBT turn on gate resistor trr = f(Rgon) Output inverter FWD 0,35 t rr( µs) t rr( µs) 0,16 trr trr 0,3 trr trr 0,12 0,25 0,2 0,08 0,15 0,1 0,04 0,05 0 0 0 At Tj = VCE = VGE = Rgon = 20 25/150 25/150 300 ±15 8 copyright Vincotech 40 60 80 I C (A) 100 0 At Tj = VR = IF = VGE = °C V V Ω 8 8 25/150 25/150 300 50 ±15 16 24 32 R Gon ( Ω ) 40 °C V A V 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Output Inverter Figure 13 Typical reverse recovery charge as a function of collector current Qrr = f(Ic) Output inverter FWD Figure 14 Typical reverse recovery charge as a function of IGBT turn on gate resistor Qrr = f(Rgon) Qrr ( µC) 5 Qrr ( µC) 6 Output inverter FWD Qrr Qrr 5 4 4 3 Qrr 3 Qrr 2 2 1 1 0 0 0 At At Tj = VCE = VGE = Rgon = 20 25/150 25/150 300 ±15 8 40 60 80 I C (A) 100 0 8 At Tj = VR = IF = VGE = °C V V Ω Figure 15 Typical reverse recovery current as a function of collector current IRRM = f(Ic) Output inverter FWD 16 25/150 25/150 300 50 ±15 24 R Gon ( Ω) 40 °C V A V Figure 16 Typical reverse recovery current as a function of IGBT turn on gate resistor IRRM = f(Rgon) Output inverter FWD IRRM (A) 120 IRRM (A) 100 32 IRRM 100 80 IRRM 80 60 60 40 40 IRRM IRRM 20 20 0 0 0 At Tj = VCE = VGE = Rgon = 20 25/150 25/150 300 ±15 8 copyright Vincotech 40 60 80 I C (A) 100 0 At Tj = VR = IF = VGE = °C V V Ω 9 8 25/150 25/150 300 50 ±15 16 24 32 R Gon ( Ω ) 40 °C V A V 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Output Inverter Figure 17 Typical rate of fall of forward and reverse recovery current as a function of collector current dI0/dt,dIrec/dt = f(Ic) Output inverter FWD Figure 18 Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(R gon) 9000 direc / dt (A/ µs) direc / dt (A/ µs) 5000 Output inverter FWD 4000 dIrec/dt 8000 dI0/dt 7000 6000 3000 5000 4000 2000 3000 dIrec/dt 2000 1000 1000 dI0/dt 0 0 0 At Tj = VCE = VGE = Rgon = 20 25/150 25/150 300 ±15 8 40 60 I C (A) 80 100 0 At Tj = VR = IF = VGE = °C V V Ω Figure 19 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) Output inverter IGBT 25/150 25/150 300 50 ±15 16 24 R Gon ( Ω) 40 32 °C V A V Figure 20 FWD transient thermal impedance as a function of pulse width ZthJH = f(tp) Output inverter FWD 101 ZthJH (K/W) ZthJH (K/W) 101 100 100 10 8 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10-2 10-2 10-5 10-4 10-3 10-2 At D= RthJH = 10-1 tp / T RthJH = 0,823 K/W 0,94 Single device heated AlI devices heated IGBT thermal model values 100 t p (s) 10-5 10110 10-4 10-3 10-2 At D= RthJH = tp / T RthJH = 1,12 K/W 1,12 Single device heated AlI devices heated FWD thermal model values K/W R (K/W) Tau (s) R (K/W) R (K/W) Tau (s) R (K/W) 0,02 0,08 0,19 0,38 0,09 0,06 9,2E+00 1,2E+00 1,6E-01 3,7E-02 7,1E-03 5,8E-04 0,14 0,08 0,19 0,38 0,09 0,06 0,02 0,08 0,22 0,49 0,20 0,11 9,2E+00 1,2E+00 1,3E-01 2,8E-02 5,9E-03 5,5E-04 0,02 0,08 0,22 0,49 0,20 0,11 copyright Vincotech 10-1 10 100 t p (s) 10110 K/W 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Output Inverter Figure 21 Power dissipation as a function of heatsink temperature Ptot = f(Th) Output inverter IGBT Figure 22 Collector current as a function of heatsink temperature IC = f(Th) 80 IC (A) Ptot (W) 250 Output inverter IGBT 200 60 150 40 100 20 50 0 0 0 At Tj = 50 175 100 °C 150 Th ( o C) 200 0 At Tj = single heating overall heating Figure 23 Power dissipation as a function of heatsink temperature Ptot = f(Th) 100 150 Th ( o C) 200 °C V Figure 24 Forward current as a function of heatsink temperature IF = f(Th) Output inverter FWD 80 Ptot (W) IF (A) 160 120 60 80 40 40 20 0 0 0 At Tj = 175 15 VGE = Output inverter FWD 50 50 175 copyright Vincotech 100 150 Th ( o C) 200 0 At Tj = °C 11 50 175 100 150 Th ( o C) 200 °C 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Output Inverter Figure 25 Safe operating area as a function of collector-emitter voltage IC = f(VCE) Output inverter IGBT Figure 26 Gate voltage vs Gate charge Output inverter IGBT VGE = f(Qg) 103 IC (A) VGE (V) 18 15 10 100uS 2 120V 10uS 480V 12 10mS 100mS 1mS 9 101 6 DC 100 3 0 10-1 0 10 At D= Th = VGE = Tj = 10 1 10 2 V CE (V) 0 103 At IC = single pulse 80 ºC ±15 V Tjmax ºC copyright Vincotech 12 50 50 100 150 200 250 300 350 400 Qg (nC) A 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Brake Figure 1 Typical output characteristics IC = f(VCE) Brake IGBT Figure 2 Typical output characteristics IC = f(VCE) 90 IC (A) IC (A) 90 Brake IGBT 75 75 60 60 45 45 30 30 15 15 0 0 0 1 2 3 V CE (V) 4 5 0 At tp = Tj = 1 2 3 V CE (V) 4 5 At tp = Tj = 250 µs 25 °C VGE from 7 V to 17 V in steps of 1 V 250 µs 150 °C VGE from 7 V to 17 V in steps of 1 V Figure 3 Typical transfer characteristics IC = f(VGE) Brake IGBT Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) 60 IC (A) IF (A) 30 Brake FWD Tj = 25°C 25 50 20 40 Tj = Tjmax-25°C 15 30 Tj = 25°C 10 20 Tj = Tjmax-25°C 5 10 0 0 0 At tp = VCE = 2 250 10 copyright Vincotech 4 6 8 10 V GE (V) 12 0 At tp = µs V 13 0,5 1 250 µs 1,5 2 2,5 V F (V) 3 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Brake Figure 5 Typical switching energy losses as a function of collector current E = f(IC) Brake IGBT Figure 6 Typical switching energy losses as a function of gate resistor E = f(RG) 1,6 E (mWs) E (mWs) 1,6 Brake IGBT Eoff 1,4 Eon 1,4 Eon 1,2 1,2 Eoff 1 Eoff 1 Eon 0,8 0,8 Eoff Eon 0,6 0,6 0,4 0,4 0,2 0,2 0 0 0 10 20 30 40 50 I C (A) 60 0 With an inductive load at Tj = 25/150 25/150 °C VCE = 300 V VGE = ±15 V Rgon = 16 Ω Rgoff = 16 Ω 30 45 60 R G ( Ω ) 75 With an inductive load at Tj = 25/150 25/150 °C VCE = 300 V VGE = ±15 V IC = 30 A Figure 7 Typical reverse recovery energy loss as a function of collector current Erec = f(Ic) Brake IGBT Figure 8 Typical reverse recovery energy loss as a function of gate resistor Erec = f(RG) 0,7 E (mWs) E (mWs) 15 Erec 0,6 Brake IGBT 0,6 0,5 0,5 0,4 0,4 Erec 0,3 0,3 Erec 0,2 0,2 Erec 0,1 0,1 0 0 0 10 20 30 40 50 I C (A) 60 0 With an inductive load at Tj = 25/150 25/150 °C VCE = 300 V VGE = ±15 V Rgon = 16 Ω copyright Vincotech 15 30 45 60 RG (Ω ) 75 With an inductive load at Tj = 25/150 25/150 °C VCE = 300 V VGE = ±15 V IC = 30 A 14 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Brake Figure 9 Typical switching times as a function of collector current t = f(IC) Brake IGBT Figure 10 Typical switching times as a function of gate resistor t = f(RG) t ( µs) 1 t ( µs) 1 Brake IGBT tdoff tdoff tdon tf tf 0,1 0,1 tdon tr 0,01 0,01 tr 0,001 0,001 0 10 20 30 40 50 IC (A) 60 0 With an inductive load at Tj = 150 °C VCE = 300 V VGE = ±15 V Rgon = 16 Ω Rgoff = 16 Ω Figure 11 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) Brake IGBT 30 45 R G ( Ω ) 75 60 Figure 12 FWD transient thermal impedance as a function of pulse width ZthJH = f(tp) Brake IGBT ZthJH (K/W) 101 ZthJH (K/W) 101 100 10 15 With an inductive load at Tj = 150 °C VCE = 300 V VGE = ±15 V IC = 30 A 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 10-2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10-2 10-5 At D= RthJH = 10-4 tp / T 1,13 copyright Vincotech 10-3 10-2 10-1 100 t p (s) 101 10 10-5 At D= RthJH = K/W 15 10-4 tp / T 1,82 10-3 10-2 10-1 100 t p (s) 101 10 K/W 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Brake Figure 13 Power dissipation as a function of heatsink temperature Ptot = f(Th) Brake IGBT Figure 14 Collector current as a function of heatsink temperature IC = f(Th) 40 IC (A) Ptot (W) 175 Brake IGBT 150 30 125 100 20 75 50 10 25 0 0 0 50 At Tj = 175 100 150 Th ( o C) 200 0 At Tj = VGE = ºC Figure 15 Power dissipation as a function of heatsink temperature Ptot = f(Th) Brake FWD 50 175 15 100 150 200 ºC V Figure 16 Forward current as a function of heatsink temperature IF = f(Th) Brake FWD 30 IF (A) Ptot (W) 100 Th ( o C) 25 80 20 60 15 40 10 20 5 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 Th ( o C) 200 0 At Tj = ºC 16 50 175 100 150 Th ( o C) 200 ºC 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Brake Inverse Diode Figure 1 Typical diode forward current as a function of forward voltage IF = f(VF) Brake inverse diode Figure 2 Diode transient thermal impedance as a function of pulse width ZthJH = f(tp) 60 IF (A) 10 50 40 1 ZthJC (K/W) Tj = 25°C Brake inverse diode Tj = Tjmax-25°C 10 0 30 20 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10 0 0 At tp = 1 250 2 3 VF (V) 10 4 -2 10 -5 10 At D= RthJH = µs Figure 3 Power dissipation as a function of heatsink temperature Ptot = f(Th) Brake inverse diode -4 10 tp / T 1,77 -3 10 -2 -1 10 0 t p (s) 1 10 10 K/W Figure 4 Forward current as a function of heatsink temperature IF = f(Th) Brake inverse diode 20 IF (A) Ptot (W) 100 10 80 15 60 10 40 5 20 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 Th ( o C) 200 0 At Tj = ºC 17 50 175 100 150 Th ( o C) 200 ºC 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Input Rectifier Bridge Figure 1 Typical diode forward current as a function of forward voltage IF= f(VF) Rectifier diode Figure 2 Diode transient thermal impedance as a function of pulse width ZthJH = f(tp) 150 Rectifier diode ZthJC (K/W) IF (A) 100 125 100 75 10 -1 Tj = 25°C D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 50 Tj = Tjmax-25°C 25 0 0 0,3 0,6 0,9 1,2 1,5 VF (V) 10-2 1,8 10-5 At tp = 250 10-4 At D= RthJH = µs Figure 3 Power dissipation as a function of heatsink temperature Ptot = f(Th) Rectifier diode 10-3 tp / T 0,74 10-2 10-1 t p (s) 10110 K/W Figure 4 Forward current as a function of heatsink temperature IF = f(Th) Rectifier diode 80 IF (A) Ptot (W) 240 100 200 60 160 120 40 80 20 40 0 0 0 At Tj = 30 150 copyright Vincotech 60 90 120 Th ( o C) 150 0 At Tj = ºC 18 30 150 60 90 120 Th ( o C) 150 ºC 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Thermistor Figure 1 Typical NTC characteristic as a function of temperature RT = f(T) Thermistor NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 copyright Vincotech 50 75 100 T (°C) 125 19 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Switching Definitions Output Inverter General Tj Rgon Rgoff conditions = 150 °C = 8Ω = 8Ω Figure 1 Output inverter IGBT Turn-off Switching Waveforms & definition of t doff, tEoff (tEoff = integrating time for Eoff) Figure 2 Output inverter IGBT Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) 280 120 tdoff % % 240 UCE Ic 100 Uge 90% 200 Uce 90% Uge 80 160 Ic 120 60 Uce Uge 80 40 tdon tEoff 40 20 0 Ic10% Uce3% Uge10% Ic 1% 0 -0,1 0 0,1 0,2 0,3 -15 15 300 50 0,19 0,58 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdoff = tEoff = 0,4 0,5 0,6 tEon -40 2,95 0,7 0,8 time (µs) V V V A µs µs 3,05 3,1 -15 15 300 50 0,11 0,24 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdon = tEon = Figure 3 Output inverter IGBT Turn-off Switching Waveforms & definition of t f 3,15 3,2 3,25 3,3 time(µs) V V V A µs µs Figure 4 Output inverter IGBT Turn-on Switching Waveforms & definition of tr 120 260 fitted % 3 UCE Ic % 100 220 Ic 90% 80 180 Ic Ic 60% 60 140 Uce Ic 40% 40 100 Ic90% tr 20 60 Ic10% 0 -20 0,15 20 tf 0,2 VC (100%) = IC (100%) = tf = copyright Vincotech 0,25 300 50 0,13 0,3 Ic10% 0,35 0,4 -20 3,05 0,45 0,5 time (µs) V A µs VC (100%) = IC (100%) = tr = 20 3,1 3,15 300 50 0,02 3,2 time(µs) 3,25 V A µs 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Switching Definitions Output Inverter Figure 5 Output inverter IGBT Turn-off Switching Waveforms & definition of t Eoff 120 % Figure 6 Output inverter IGBT Turn-on Switching Waveforms & definition of tEon 150 Eoff Poff 100 % Pon 120 Eon 80 90 60 60 40 30 20 Uge10% Uce3% Uge90% 0 0 tEon tEoff -20 -0,1 Ic 1% -30 0,05 Poff (100%) = Eoff (100%) = tEoff = 0,2 15,03 1,81 0,58 0,35 0,5 0,65 2,9 0,8 0,95 time (µs) 3 3,1 3,2 3,3 3,4 time(µs) kW mJ µs 15,03 0,72 0,24 Pon (100%) = Eon (100%) = tEon = kW mJ µs Figure 7 Output inverter FWD Turn-off Switching Waveforms & definition of t rr 120 % Id 80 trr 40 Ud fitted 0 IRRM10% -40 -80 -120 IRRM90% IRRM100% -160 -200 3,05 Vd (100%) = Id (100%) = IRRM (100%) = trr = copyright Vincotech 21 3,1 3,15 3,2 300 50 -77 0,15 V A A µs 3,25 3,3 3,35 time(µs) 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Switching Definitions Output Inverter Figure 8 Output inverter FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9 Output inverter FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 140 200 % % Erec 110 Qrr Id 100 80 tQrr tErec 50 0 20 -100 Prec -10 -200 2,95 3,1 Id (100%) = Qrr (100%) = tQint = copyright Vincotech 3,25 50 4,37 0,29 3,4 3,55 time(µs) -40 2,95 3,7 A µC µs Prec (100%) = Erec (100%) = tErec = 22 3,15 3,35 15,03 0,99 0,29 3,55 time(µs) 3,75 kW mJ µs 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Ordering Code in DataMatrix as V23990-P760-A-PM without thermal paste 12mm housing P760-A in packaging barcode as P760-A Outline Pin X Pin table Y Pin X Y 1 2 3 4 5 6 DCDCDCDCDC+ DC+ 71,2 68,7 66,2 63,7 55,95 53,45 0 0 0 0 0 0 33 34 35 36 37 38 G G E V V V 10,6 18,45 21,25 24,05 26,55 29,05 37,2 37,2 37,2 37,2 37,2 37,2 7 8 9 10 11 12 13 14 DC+ DC+ DC+ DC+ E DCG DC- 55,95 53,45 48,4 45,9 38,9 36,1 38,9 36,1 2,8 2,8 0 0 0 0 2,8 2,8 39 40 41 42 43 44 45 46 W W W E G L1 L1 L1 36,1 38,6 41,1 43,9 46,7 53,7 56,2 58,7 37,2 37,2 37,2 37,2 37,2 37,2 37,2 37,2 15 16 17 18 19 20 DCE DCG R2 R1 31,3 28,5 31,3 28,5 19,3 19,3 0 0 2,8 2,8 0 2,8 47 48 49 50 51 52 L2 L2 L2 L3 L3 L3 71,2 71,2 71,2 71,2 71,2 71,2 37,2 34,7 32,2 25,2 22,7 20,2 21 22 23 24 DC+ DC+ DC+ DC+ 12,3 9,8 12,3 9,8 0 0 2,8 2,8 53 54 55 56 BrC BrC BrG BrE 71,2 68,7 71,2 71,2 12,8 12,8 5,6 2,8 25 26 27 28 29 E DCG DCU 2,8 0 2,8 0 0 0 0 2,8 2,8 37,2 2,5 5 7,8 37,2 37,2 37,2 30 U 31 U 32 E Pinout copyright Vincotech 23 23 Dec 2014 / Revision: 4 V23990-P763-A-PM datasheet DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 24 23 Dec 2014 / Revision: 4