10 R106PPA020SB01 M934A D2 14

10-R106PPA020SB01-M934A
datasheet
flow 90PIM 1 + PFC
600 V / 20 A
Features
flow 90 housing
● Clip in PCB mounting
● Trench Fieldstop IGBT's for low saturation losses
● Latest generation superjunction MOSFET for PFC
Schematic
Target applications
● Industrial Drives
● Embedded Drives
Types
● 10-R106PPA020SB01-M934A
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
600
V
23
A
159
A
1135
mJ
1,7
mJ
9,3
A
50
V/ns
90
W
PFC Mosfet
Drain-source voltage
V DS
Drain current
ID
Peak drain current
I Dpulse
Avalanche energy, single pulse
E AS
Avalanche energy, repetitive
E AR
Avalanche current, repetitive
I AR
MOSFET dv/dt ruggedness
dv /dt
T j = T jmax
T h=80°C
t p limited by T jmax
I D = 9,3
V DD = 50
I D = 9,3
V DD = 50
t p limited by T jmax
PAV = EAR*f
V DS = 0-480V
T j = T jmax
T h=80°C
Total power dissipation
P tot
Gate-source voltage
V GS
±20
V
Reverse diode dv/dt
dv /dt
15
V/ns
T jmax
150
°C
Maximum Junction Temperature
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1
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Parameter
Conditions
Symbol
Value
Unit
600
V
25
A
99
A
87
A
39
W
150
°C
Value
Unit
600
V
24
A
60
A
53
W
±20
V
PFC Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
T j = T jmax
T h = 80°C
Repetitive peak forward current
IFRM
Surge (non-repetitive) forward current
I FSM
50 Hz Single Half Sine Wave
Total power dissipation
P tot
T j = T jmax
Maximum Junction Temperature
T jmax
TParameter
j=
T h = 80°C
Condition
Symbol
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j=T jmax
T S=80°C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j=T jmax
Gate-emitter voltage
V GES
Short circuit ratings
Maximum Junction Temperature
Parameter
T S=80°C
t SC
Tj ≤ 150°C
6
µs
V CC
VGE = 15V
360
V
175
°C
Value
Unit
600
V
32
A
90
A
53
W
175
°C
T jmax
Conditions
Symbol
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
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T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
2
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Parameter
Conditions
Symbol
Value
Unit
1600
V
33
A
200
A
200
A s
43
W
150
°C
Rectifier Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
V RRM
IF
I FSM
2
Surge current capability
I t
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T h = 80°C
50 Hz Single Half Sine Wave
t p = 10 ms
T j = 150°C
T j = T jmax
T h = 80°C
Conditions
Symbol
2
Value
Unit
630
V
Value
Unit
DC Link Capacitor
Maximum DC voltage
Parameter
V MAX
Conditions
Symbol
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
min 12,7
mm
11,84
mm
Isolation Properties
Isolation voltage
V isol
DC voltage
Creepage distance
Clearance
Comparative Tracking Index
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t p=2s
>200
CTI
3
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Characteristic Values
PFC Mosfet
Symbol
Parameter
Conditions
Value
V GS [V] V DS [V] I D [A]
T j[ °C]
Min
Unit
Typ
Max
25
71
80
125
151
Static
Drain-source on-state resistance
r DS(on)
Gate-source threshold voltage
V GS(th)
10
25
V GS = V DS
0,00172
Gate to Sourc e Leakage Current
I GSS
20
0
Zero Gate Voltage Drain Current
I DSS
0
600
25
2,5
3
25
100
125
25
5
125
Internal gate resistance
rg
0,85
Gate c harge
Qg
170
Gate to source charge
Q GS
Gate to drain c harge
Q GD
87
Short-c irc uit input capacitance
C iss
3800
Short-c irc uit output capacitance
C oss
Reverse transfer c apac itanc e
C rss
0/10
f=1MHz
0
3,5
125
480
25,8
100
25
25
21
215
mΩ
V
nA
µA
Ω
nC
pF
35
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,8
K/W
MOSFET Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
Rgoff=4Ω
Rgon=4Ω
t d(off)
±15
Fall time
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
400
tf
3
25
23
125
21
25
4
125
3
25
253
125
327
25
-85
125
61
QrrFWD=0,1uC
25
0,084
QrrFWD=0,1uC
125
0,040
25
0,037
125
0,019
4
ns
mWs
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Diode
Symbol
Parameter
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,40
1,7
125
1,55
150
-
Static
Forward voltage
24
VF
Reverse leakage current
600
Ir
V
25
4,8
150
24
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
1,82
K/W
FWD Switching
Peak rec overy current
I RRM
Reverse rec overy time
t rr
Rec overed c harge
Reverse rec overed energy
Peak rate of fall of rec overy c urrent
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Qr
E rec
(di rf/dt )max
di/dt=1792A/µs
25
9
di/dt=1540A/µs
125
8
di/dt=1792A/µs
25
11
di/dt=1540A/µs
125
12
di/dt=1792A/µs
25
0,092
di/dt=1540A/µs
±15
400
3
125
0,079
di/dt=1792A/µs
25
0,013
di/dt=1540A/µs
125
0,011
di/dt=1792A/µs
25
2688
di/dt=1540A/µs
125
1876
5
A
ns
µC
mWs
A/µs
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
5
5,8
6,5
1,1
1,52
1,9
Static
Gate-emitter threshold voltage
V GE(th) V GE=V CE
0,00029
25
125
25
Collec tor-emitter saturation voltage
15
V CEsat
20
Collec tor-emitter cut-off c urrent
I CES
0
600
Gate-emitter leakage current
I GES
20
0
Internal gate resistance
125
-
150
1,84
25
1,1
300
125
rg
none
Input capacitance
C ies
1100
Output capacitance
C oes
Reverse transfer c apac itanc e
C res
Gate c harge
f=1 MHz
0
V
125
25
25
25
71
V
µA
nA
Ω
pF
32
15
Qg
480
20
25
120
nC
1,81
K/W
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
25
t d(on)
tr
R goff = 16 Ω
R gon = 16 Ω
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
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65
25
20
125
t d(off)
400
15
66
125
21
25
142
125
167
25
125
76
86
Q rFWD = 0,9 µC
25
Q rFWD = 1,8 µC
125
0,667
25
0,385
125
0,523
6
ns
0,450
mWs
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,65
1,95
125
1,62
150
-
Static
Forward voltage
Reverse leakage current
30
VF
25
600
Ir
V
200
150
-
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
1,80
K/W
FWD Switching
Peak recovery current
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
25
I RRM
10
125
di /dt = 731 A/µs
±15
di /dt = 708 A/µs
400
15
E rec
(di rf/dt )max
A
14
25
174
125
233
25
ns
0,883
125
1,790
25
0,236
125
0,474
25
36
125
85
µC
mWs
A/µs
Rectifier Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,22
1,9
125
1,21
Static
Forward voltage
VF
Reverse leakage current
Ir
25
1600
25
50
150
1100
V
µA
Thermal
Thermal resistanc e junction to sink
Copyright Vincotech
R th(j-s)
Phase-Change
Material
ʎ =3,4W /mK
1,61
7
K/W
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
V CE [V]
ΔR/R
Power dissipation
P
T j[ °C]
Min
25
R
Deviation of R100
Value
I C [A]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
F
DC Link Capacitor
Parameter
Symbol
Conditions
Value
T j[°C]
Capacitance
Copyright Vincotech
Min
Typ
100
C
8
Unit
Max
nF
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
60
I C (A)
I C (A)
60
45
45
30
30
15
15
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
25 °C
tp =
250
V GE=
15
V
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
T j:
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
20
Z t h( jj--s)(K/W)
I C (A)
101
15
100
10
0,5
10-1
0,2
0,1
5
0,05
0,02
0,01
0,005
0
10-2
10-4
0
0
2
4
6
8
10
12
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
V CE =
10
V
125 °C
R th(j-s) =
T j:
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150 °C
10-1
100
t p (s)
101
tp / T
1,81
K/W
IGBT thermal model values
R th (K/W)
9
6,63E-02
τ (s)
3,68E+00
1,83E-01
4,61E-01
8,24E-01
8,38E-02
3,93E-01
1,82E-02
1,96E-01
3,57E-03
1,49E-01
3,52E-04
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q G)
V G E (V)
20
17,5
15
120V
480V
12,5
10
7,5
5
2,5
0
0
20
40
60
80
100
120
140
160
Q G (nC)
At
20
I C=
A
Short circuit duration as a function of V GE
IGBT
IGBT
I SC = f(VGE)
350
14
I sc (A)
t pS C (µS)
t pSC = f(V GE)
Typical short circuit current as a function of V GE
12
300
10
250
8
200
6
150
4
100
2
50
0
0
10
11
12
13
14
12
15
13
14
15
16
17
18
19
20
V G E (V)
V G E (V)
At
At
V CE =
600
V
V CE ≤
600
V
Tj ≤
175
ºC
Tj ≤
175
ºC
Copyright Vincotech
10
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Diode Characteristics
FWD
Typical forward characteristics
Z th(j-s) = f(t p)
90
101
Z t h( jj--s) (K/W)
IF (A)
I F = f(V F)
FWD
Transient thermal impedance as a function of pulse width
75
100
60
45
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
30
15
0
10-2
0
1
2
3
4
5
10-5
10-4
10-3
VF (V)
tp =
250
µs
10-2
10-1
100
101
t p (s)
25 °C
T j:
125 °C
D=
tp / T
150 °C
R th(j-s) =
1,80
K/W
FWD thermal model values
Copyright Vincotech
11
R (K/W)
7,95E-02
τ (s)
3,72E+00
2,06E-01
4,02E-01
7,04E-01
8,35E-02
4,39E-01
1,56E-02
2,12E-01
2,93E-03
1,68E-01
3,31E-04
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switch Characteristics
Typical output characteristics
MOSFET
I D = f(V DS)
Typical output characteristics
MOSFET
I D= f(V DS)
60
ID (A)
I D (A)
60
50
50
40
40
30
30
20
20
10
10
0
0
2
4
6
8
0
10
0
VGS (V)
tp =
250
µs
V GS=
10
V
T j:
1
2
3
4
5
7
8
9
10
VGS (V)
25 °C
tp =
250
125 °C
Tj =
25oC
150 °C
V GS from
0 V to 20 V in steps of 2 V
MOSFET
Typical transfer characteristics
6
I D = f(V DS)
µs
°C
Transient thermal impedance as a function of pulse width
MOSFET
Z thJH = f(t p)
1
ZthJH (K/W)
I D (A)
25
20
15
0,1
10
0,5
0,2
0,1
0,05
5
0,02
0,01
0,005
0
0,01
1,00E-04
0
0
1
2
3
4
5
6
1,00E-03
1,00E-02
1,00E-01
100
µs
V DS =
0
V
Tj :
1,00E+01
1,00E+02
tp(s)
VGS (V)
tp =
1,00E+00
25 °C
D =
tp / T
125 °C
R thJH =
0,78
K/W
150 °C
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12
R (K/W)
Tau (s)
2,79E-02
1,48E+01
9,18E-02
1,22E+00
4,16E-01
2,24E-01
1,49E-01
5,85E-02
6,36E-02
1,29E-02
3,14E-02
1,19E-03
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switch Characteristics
Gate voltage vs Gate charge
MOSFET
UGS (V)
V GS = f(Q g)
10
9
120V
8
480V
7
6
5
4
3
2
1
0
0
50
100
150
200
Qg (nC)
At
I C=
25
A
PFC Diode Characteristics
FWD
Typical forward characteristics
Z th(j-s) = f(t p)
24
101
Z t h( jj--s) (K/W)
IF (A)
I F = f(V F)
FWD
Transient thermal impedance as a function of pulse width
20
100
16
12
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
8
4
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D =
tp / T
125 °C
R th(j-s) =
1,82
K/W
150 °C
FWD thermal model values
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13
R (K/W)
8,90E-02
τ (s)
3,09E+00
4,63E-01
3,43E-01
8,81E-01
8,40E-02
2,39E-01
1,66E-02
1,44E-01
2,77E-03
7,55E-02
3,37E-04
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Rectifier Diode Characteristics
Rectifier Diode
Typical forward characteristics
Rectifier Diode
Z th(j-s) = f(t p)
75
101
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F)
Transient thermal impedance as a function of pulse width
60
100
45
30
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
15
10-2
0
0
0,5
1
1,5
2
2,5
10-4
3
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,61
K/W
150 °C
Diode thermal model values
R (K/W)
6,72E-02
τ (s)
2,72E+00
1,48E-01
4,14E-01
8,68E-01
8,33E-02
2,53E-01
2,89E-02
1,69E-01
5,15E-03
1,06E-01
9,10E-04
Thermistor Characteristics
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
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14
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
E = f(I C)
E = f(r g)
1,6
1,6
E (mWs)
Typical switching energy losses as a f unct ion of gat e resist or
E (mWs)
Typical swit ching energy losses as a f unct ion of collect or current
Eon
1,2
Eon
1,2
Eo n
Eo n
Eoff
0,8
0,8
E o ff
Eoff
0,4
0,4
0
Eo ff
0
0
5
10
15
20
25
30
0
I C (A)
25 °C
With an inductive load at
400
V
V CE =
V GE =
±15
V
R gon =
16
Ω
R goff =
16
Ω
T j:
10
20
30
125 °C
150 °C
V GE =
±15
V
15
A
IC =
FWD
Figure 3.
40
T j:
E rec = f(r g)
E (mWs)
70
FWD
E rec = f(I c)
E (mWs)
R g ( Ω)
125 °C
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
0,6
60
150 °C
Typical reverse recovered energy loss as a f unct ion of collect or current
0,7
50
25 °C
With an inductive load at
400
V
V CE =
0,6
0,5
Erec
Erec
0,5
0,4
0,4
Erec
0,3
0,3
0,2
Erec
0,2
0,1
0,1
0
0
0
5
10
With an inductive load at
400
V
V CE =
V GE =
±15
V
R gon =
16
Ω
Copyright Vincotech
15
20
25
I C (A)
0
30
25 °C
T j:
10
20
With an inductive load at
400
V
V CE =
125 °C
150 °C
V GE =
IC =
15
±15
V
15
A
30
40
50
60
r g (Ω)
70
25 °C
T j:
125 °C
150 °C
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(on)
td(off )
tf
td(on)
tr
0,1
0,1
tf
tr
0,01
0,01
0,001
0,001
0
5
10
15
20
25
30
0
I C (A)
(A)
With an inductive load at
125
°C
Tj =
10
20
30
40
50
60
r g (Ω)
70
With an inductive load at
125
°C
Tj =
V CE =
400
V
V CE =
400
V
V GE =
±15
V
V GE =
±15
V
R gon =
16
Ω
IC =
15
A
R goff =
16
Ω
FWD
Figure 7.
FWD
Figure 8.
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,3
t rr (μs)
t rr (μs)
0,4
trr
0,25
trr
0,3
trr
trr
0,2
0,15
0,2
0,1
0,1
0,05
0
0
0
5
10
15
20
25
30
0
I C (A)
At
V CE=
400
V
V GE =
±15
V
R gon =
16
Ω
Copyright Vincotech
20
30
40
50
60
70
R g o n (Ω)
25 °C
T j:
10
V CE =
400
V
125 °C
At
V GE =
±15
V
150 °C
IC =
15
A
16
25 °C
T j:
125 °C
150 °C
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C )
Q r = f(R gon)
2,5
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
Qr
2
Qr
2
1,5
1,5
1
Qr
1
Qr
0,5
0,5
0
At
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
I C (A)
V CE =
400
V
V GE =
±15
V
R gon =
16
Ω
At
25 °C
T j:
V CE=
400
V
125 °C
At
V GE =
±15
V
150 °C
I C=
15
A
Figure 11.
FWD
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
16
70
R g on (Ω)
I R M (A)
I R M (A)
50
IR M
40
12
IRM
30
8
20
4
10
I RM
IRM
0
0
0
At
5
10
V CE =
400
V
V GE =
±15
V
R gon =
16
Ω
Copyright Vincotech
15
20
25
I C (A)
0
30
T j:
10
20
30
40
50
60
70
R go n (Ω)
25 °C
At
V CE =
400
V
125 °C
V GE =
±15
V
150 °C
IC =
15
A
17
25 °C
T j:
125 °C
150 °C
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
diF/dt,dirr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
1200
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F / dt
dir r/dt
8000
di F / dt
di r r/ dt
900
6000
600
4000
300
2000
0
0
0
5
10
15
20
25
0
30
10
20
I C (A)
At
V CE =
400
V
V GE =
±15
V
R gon =
16
Ω
25 °C
T j:
At
V CE =
400
125 °C
V GE =
±15
V
150 °C
I C=
15
A
Figure 15.
30
40
50
60
70
R g o n (Ω)
V
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
70
I C MAX
I c CHIP
60
50
MODULE
40
Ic
30
V CE MAX
20
10
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
Tj =
16
Ω
R goff =
16
Ω
Copyright Vincotech
18
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switching Definition
General conditions
125 °C
Tj
R gon
=
=
16 Ω
R goff
=
16 Ω
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
140
200
%
%
IC
tdoff
VCE
150
100
VGE 90%
VCE 90%
VCE
100
IC
60
VGE
VGE
tdon
tEoff
50
20
VCE 3%
IC 10%
VGE 10%
0
IC 1%
tEon
-20
-0,1
-50
0
0,1
0,2
0,3
0,4
0,5
2,9
t (µs)
V GE (0%) =
3
3,1
3,2
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
21
A
I C (100%) =
21
A
t doff =
0,145
µs
t don =
0,067
µs
t E off =
Figure 3.
0,400
µs
t E on =
Figure 4.
0,245
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,3
3,4
t ( µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
200
fitted
%
%
VCE
IC
IC
100
150
IC 90%
75
VCE
100
IC 60%
IC 90%
50
IC 40%
tr
50
25
IC10%
0
IC 10%
0
tf
-25
0
0,08
0,16
0,24
-50
0,32
3
t (µs)
3,08
3,16
3,24
3,4
t (µs)
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
21
A
I C (100%) =
21
A
tf =
0,075
µs
tr =
0,029
µs
Copyright Vincotech
3,32
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17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switching Definition
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
150
%
Poff
Pon
%
IC 1%
Eoff
100
125
Eon
100
75
75
50
50
25
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
tEon
-25
-25
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
2,9
3
3,1
3,2
P off (100%) =
8,37
kW
P on (100%) =
8,37
E off (100%) =
0,71
mJ
E on (100%) =
0,96
mJ
t E off =
0,40
µs
t E on =
0,24
µs
Figure 7.
3,3
3,4
t (µs)
t (µs)
kW
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
IRRM 10%
0
Vd
fitted
-50
IRRM 90%
IRRM 100%
-100
-150
3
3,1
3,2
3,3
3,4
3,5
t (µs)
V d (100%) =
400
V
I d (100%) =
21
A
I RRM (100%) =
-13
A
t rr =
0,257
µs
Copyright Vincotech
20
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Inverter Switching Definition
Figure 8.
FWD
Turn-on Swit ching Wavef orms & def inition of t Qrr (t Qrr = int egrat ing t ime f or Qrr)
Figure 9.
FWD
Turn-on Swit ching Wavef orms & def init ion of t Erec (t Erec = int egrat ing t ime f or Erec )
125
150
%
%
Erec
Qrr
Id
100
100
75
50
tQrr
tErec
Prec
50
0
25
-50
0
-100
3
3,1
3,2
3,3
3,4
3,5
3,6
-25
3,7
3
t (µs)
3,1
3,2
3,3
3,4
3,6
3,7
t (µs)
I d (100%) =
21
A
P rec (100%) =
8,37
kW
Q rr (100%) =
2,01
µC
E rec (100%) =
0,54
mJ
t Qrr =
0,52
µs
t Erec =
0,52
µs
Copyright Vincotech
3,5
21
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switching Characteristics
Figure 1.
MOSFET
Figure 2.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(I D)
E = f(R G )
0,25
E (mWs)
E (mWs)
0,25
Eon
Eon
0,2
Eoff
0,2
Eon
0,15
0,15
Eoff
0,1
0,1
Eoff
Eon
0,05
0,05
Eoff
0
0
0
5
10
15
20
25
0
30
5
10
15
20
25
30
25 °C
With an inductive load at
V DS =
400
V
V GS =
±15
V
R gon =
4
Ω
R goff =
4
Ω
T j:
With an inductive load at
25 °C
125 °C
V DS =
400
V
150 °C
V GS =
±15
V
ID =
3
A
Figure 3.
FWD
T j:
125 °C
150 °C
Figure 4.
FWD
Typical reverse recovery energy loss as a function of drain current
Typical reverse recovery energy loss as a function of gate resistor
E rec = f(I D)
E rec = f(R G )
E (mWs)
0,035
E (mWs)
35
RG (Ω )
ID (A)
t rr
0,02
0,018
Erec
0,03
0,016
Qr
Erec
0,025
0,014
Erec
0,02E rec
Erec
0,012
0,01
0,015
(di rf/dt )max
0,008
0,006
0,01
0,004
0,005
0,002
0
0
0
5
10
15
20
With an inductive load at
I D (A)
0
30
25 °C
V DS =
400
V
V GS =
±15
V
R gon =
4
Ω
R goff =
4
Ω
Copyright Vincotech
25
T j:
5
10
15
20
With an inductive load at
30
RG (Ω )
35
25 °C
125 °C
V DS =
400
V
150 °C
V GS =
±15
V
ID =
3
A
22
25
T j:
125 °C
150 °C
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switching Characteristics
Figure 5.
MOSFET
Figure 6.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(I D)
t = f(R G )
1
tdoff
t (μs)
t (μs)
1
tdoff
0,1
0,1
tf
tf
tdon
tdon
0,01
tr
0,01
tr
0,001
0,001
0
5
10
15
20
25
30
0
35
5
10
15
20
25
30
35
RG (Ω)
I D(A)
With an inductive load at
With an inductive load at
Tj =
125
°C
Tj =
125
°C
V DS =
400
V
V DS =
400
V
V GS =
±15
V
V GS =
±15
V
R gon =
4
Ω
ID =
3
A
R goff =
4
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
t rr = f(I D)
t rr = f(R gon)
0,02
0,07
t rr(μs)
t rr(μs)
trr
trr
0,06
0,015
0,05
trr
0,01
0,04
trr
0,03
0,02
0,005
0,01
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
I D (A)
At
400
V
V GS =
V DS =
±15
V
R gon =
4
Ω
Copyright Vincotech
35
RGon (Ω)
25 °C
T j:
30
At
V DS =
125 °C
V GS =
150 °C
ID =
23
400
V
±15
V
3
A
25 °C
T j:
125 °C
150 °C
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical reverse recovery charge as a function of drain current
Typical reverse recovery charge as a function of MOSFET turn on gate resistor
Q rr = f(I D)
Q rr = f(R gon)
0,16
Q rr (μC)
Qrr (µC)
0,12
0,14
0,1
0,12
Qrr
0,1
Qrr
Qrr
0,08
0,08
Qrr
0,06
0,06
0,04
0,04
0,02
0,02
At
0
0
0
5
10
15
20
25
0
30
5
10
15
20
25
30
I D (A)
400
V
V GS =
V DS =
±15
V
R gon =
4
Ω
At
25 °C
T j:
At
V DS =
125 °C
V GS =
150 °C
ID =
Figure 11.
35
RGon(Ω)
FWD
400
V
±15
V
3
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical reverse recovery current as a function of drain current
Typical reverse recovery current as a function of MOSFET turn on gate resistor
I RRM = f(I D)
I RRM = f(R gon)
I rrM (A)
I rrM (A)
14
12
25
20
IRRM
10
IRRM
15
8
6
10
4
5
IRRM
IRRM
2
0
0
0
5
10
15
20
25
0
30
5
10
15
20
25
At
400
V
V GS =
V DS =
±15
V
R gon =
4
Ω
Copyright Vincotech
25 °C
T j:
30
35
RGon(Ω)
I D (A)
At
V DS =
125 °C
V GS =
150 °C
ID =
24
400
V
±15
V
3
A
25 °C
T j:
125 °C
150 °C
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of
dI 0/dt ,dI rec/dt = f(I D)
MOSFET t urn on gate resistor
4000
direc / dt (A/µ s)
direc / dt (A/µ s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of drain current
dI0/dt
dIrec/dt
3500
7000
dI0/dt
dIrec/dt
6000
3000
5000
2500
4000
2000
3000
1500
2000
1000
1000
500
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
At
400
V
V GS =
V DS =
±15
V
R gon =
4
Ω
25 °C
T j:
At
V DS =
125 °C
V GS =
150 °C
ID =
Figure 15.
30
35
RGon(Ω)
ID (A)
400
V
±15
V
3
A
25 °C
T j:
125 °C
150 °C
MOSFET
Reverse bias safe operating area
I D = f(V DS)
I D (A)
30
ID MAX
ID CHIP
25
ID MODULE
20
15
VDS MAX
10
5
0
0
100
200
300
400
500
600
700
800
VDS (V)
At
Tj =
175
°C
R gon =
4
Ω
R goff =
4
Ω
Copyright Vincotech
25
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switching Definition
General conditions
Figure 1.
Tj
=
125 °C
R gon
R goff
=
=
8Ω
8Ω
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for E off)
Figure 2.
MOSFET
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for E on)
150
125
tdoff
%
100
%
ID
VDS
VGS 90%
100
VDS 90%
VGS
75
50
VDS
ID
tdon
VGS
50
tEoff
25
VGS 10%
ID 1%
ID 10%
0
VDS 3%
0
tEon
-50
-25
-0,1
-0,02
0,06
0,14
0,22
2,9
0,3
2,98
3,06
3,14
3,22
3,3
time(us)
time (us)
V GS (0%) =
0
V
V GS (0%) =
0
V
V GS (100%) =
10
V
V GS (100%) =
10
V
V DS (100%) =
400
V
V DS (100%) =
400
V
I D (100%) =
21
A
I D (100%) =
21
A
t doff =
0,237
µs
t don =
0,023
µs
t E off =
Figure 3.
0,271
µs
t E on =
Figure 4.
0,082
µs
MOSFET
Turn-off Switching Waveforms & definition of tf
MOSFET
Turn-on Switching Waveforms & definition of tr
175
125
fitted
%
%
VDS
ID
150
100
ID 90%
125
ID
VDS
75
100
ID 60%
ID 90%
50
75
tr
ID 40%
50
25
25
ID 10%
0
ID 10%
0
tf
-25
0,1
0,14
0,18
0,22
0,26
-25
0,3
3
3,02
3,04
3,06
time (us)
3,1
time(us)
V DS (100%) =
400
V
V DS (100%) =
400
V
I D (100%) =
21
A
I D (100%) =
21
A
tf =
0,011
µs
tr =
0,011
µs
Copyright Vincotech
3,08
26
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switching Definition
Figure 5.
MOSFET
Turn-off Switching Waveforms & definition of tEoff
Figure 6.
MOSFET
Turn-on Switching Waveforms & definition of tEon
125
125
%
%
Eoff
100
Eon
100
Poff
75
75
50
50
25
25
VGS 90%
VGS 10%
0
VDS 3%
0
tEoff
-25
-0,1
-0,02
0,06
0,14
0,22
Pon
tEon
ID 1%
-25
2,95
0,3
2,975
3
3,025
P off (100%) =
8,40
kW
P on (100%) =
8,40
E off (100%) =
0,14
mJ
E on (100%) =
0,23
mJ
t E off =
0,27
µs
t E on =
0,08
µs
Figure 7.
3,05
3,075
3,1
time(us)
time (us)
kW
FWD
Turn-off Switching Waveforms & definition of trr
125
%
100
ID
75
trr
50
25
0
IRRM 10%
VDS
IRRM 90%
-25
IRRM 100%
fitted
-50
-75
-100
-125
3
3,02
3,04
3,06
3,08
3,1
time(us)
V DS (100%) =
400
V
I D (100%) =
21
A
I RRM (100%) =
-6
A
t rr =
0,013
µs
Copyright Vincotech
27
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
PFC Switching Definition
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for E rec)
150
150
%
%
100
100
Prec
tErec
ID
50
Erec
0
50
-50
tQrr
-100
Qrr
0
-150
-200
-50
3
3,03
3,06
3,09
3,12
-250
3,15
3
3,03
3,06
3,09
time(us)
3,15
time(us)
I D (100%) =
21
A
P rec (100%) =
8,40
Q rr (100%) =
0,13
µC
E rec (100%) =
0,03
mJ
t Q rr =
0,10
µs
t E rec =
0,10
µs
Copyright Vincotech
3,12
28
kW
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Ordering Code & Marking
Version
without thermal paste
Vinco WWYY
NNNNNNNVV UL
LLLLL SSSS
Ordering Code
10-R106PPA020SB01-M934A
Text
Datamatrix
in DataMatrix as
M934A
in packaging barcode as
M934A
Vinco
Date code
Name&Ver
UL
Lot
Serial
Vinco
WWYY
NNNNNNNVV
UL
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
1
53
0
Function
L2
2
46
0
DC+
3
39,5
0
PFCIN
4
32,5
0
PFC+
5
28,1
0
Inv+
6
18
0
WLG
7
15
0
WL
8
12
0
VLG
9
9
0
VL
10
3
0
ULG
11
12
13
0
0
3
0
7
7
UL
UHG
14
8,5
7
VHG
15
11,5
7
V
16
17
7
WHG
17
20
7
W
18
33
7
PFC-
19
36
7
PFCG
20
39
7
NTC
21
46
7
22
53
7
DCL1
Copyright Vincotech
U
29
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Pinout
MOSFET!
Copyright Vincotech
30
17 Jul. 2015 / Revision 1
10-R106PPA020SB01-M934A
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
80
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 90 1 packages see vincotech.com website.
Document No.:
Date:
10-R106PPA020SB01-M934A-D2-14
17 Jul. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
31
17 Jul. 2015 / Revision 1
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