10 0B06PPA004RC L022A09 D3 14

10-0B06PPA004RC-L022A09
datasheet
flow PIM 0B + PFC
600 V / 4 A
Features
flow 0 B housing
● Converter, PFC, inverter in one housing
● New high speed IGBT for PFC
● One screw heatsink mounting
Target applications
Schematic
● Embedded drives
Types
● 10-0B06PPA004RC-L022A09
Maximum Ratings
Tj=25°C, unless otherwise specified
Inverter Switch
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1
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switch
PFC Diode
PFC Switch Protection Diode
Rectifier Diode
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2
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Characteristic Values
Inverter Switch
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07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switch
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07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Diode
PFC Protection Diode
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07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Rectifier Diode
Thermistor
Module Properties
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07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
12
IC(A)
IC (A)
12
9
9
6
6
3
3
0
0
0
1
2
3
4
0
5
0,5
1
1,5
2
2,5
3
3,5
4
4,5
tp =
250
µs
V GE=
15
V
T j:
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
5
VCE (V)
VCE (V)
IGBT
µs
°C
Transient thermal impedance as a function of pulse width IGBT
I C = f(V CE)
Z thJH = f(t p)
10
ZthJH (K/W)
IC (A)
4
3
1
2
0,5
0,1
0,2
0,1
1
0,05
0,02
0,01
0,005
0
0,01
1,00E-04
0
0
2
4
6
8
10
12
1,00E-03
1,00E-02
1,00E-01
tp =
100
µs
V CE =
10
V
T j:
25 °C
D =
125 °C
R thJH =
150 °C
Copyright Vincotech
1,00E+00
1,00E+01
1,00E+02
tp(s)
VCE (V)
tp / T
2,60
K/W
IGBT thermal model values
7
R (K/W)
Tau (s)
7,48E-02
2,66E+00
1,91E-01
2,47E-01
1,40E+00
4,11E-02
4,54E-01
1,27E-02
4,75E-01
2,92E-03
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
V GE = f(Q G )
IGBT
I C = f(V CE)
100
I C (A)
V G E (V)
18
16
14
120V
DC
10
480V
1ms
10ms
100ms
100µs
12
10
1
8
6
0,1
4
2
0
0,01
0
5
10
15
20
25
30
1
10
100
1000
Q G (nC)
V C E (V)
At
At
I C=
4
D =
A
Short circuit duration as a function of V GE
IGBT
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
Typical short circuit current as a function of V GE
t pSC = f(V GE)
IGBT
I SC = f(V GE)
14
70
I sc (A)
t pS C (µS)
single pulse
Ts =
12
60
10
50
8
40
6
30
4
20
2
10
0
0
10
11
12
13
14
15
16
12
17
13
14
15
V G E (V)
17
18
19
20
V G E (V)
At
V CE =
16
At
400
Start at T j ≤ 150
Copyright Vincotech
V
V CE ≤
ºC
Start at T j ≤25
8
400
V
ºC
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
I C = f(V CE)
50
IC (A)
50
IC(A)
IGBT
45
45
40
40
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0
1
2
3
4
0
5
0,5
1
1,5
2
2,5
3
3,5
4
4,5
tp =
250
µs
V GE=
15
V
T j:
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
IGBT
Typical transfer characteristics
5
VCE (V)
VCE (V)
µs
°C
IGBT
Transient thermal impedance as a function of pulse width
I C = f(V CE)
Z thJH = f(t p)
10
ZthJH (K/W)
IC (A)
15
12
1
9
6
0,5
0,1
0,2
0,1
0,05
3
0,02
0,01
0,005
0
0,01
1,00E-04
0
0
1
2
3
4
5
6
7
8
1,00E-03
1,00E-02
1,00E-01
100
µs
V CE =
10
V
T j:
25 °C
D =
125 °C
R thJH =
150 °C
Copyright Vincotech
1,00E+01
1,00E+02
tp(s)
VCE (V)
tp =
1,00E+00
tp / T
2,14
K/W
IGBT thermal model values
9
R (K/W)
Tau (s)
1,10E-01
1,85E+00
3,05E-01
2,58E-01
8,44E-01
6,42E-02
4,55E-01
1,26E-02
2,79E-01
3,05E-03
1,45E-01
4,84E-04
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q g)
VGE (V)
15
12,5
130V
10
520V
7,5
5
2,5
0
0
5
10
15
20
25
30
35
40
Qg (nC)
At
I C=
15
A
PFC Diode Characteristics
FWD
Typical forward characteristics
Z th(j-s) = f(t p)
50
100
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
40
30
10-1
20
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
0
10-2
0
0,5
1
1,5
2
2,5
3
10-4
10-3
10-2
VF (V)
tp =
250
µs
10-1
100
101
1032
t p (s)
25 °C
T j:
125 °C
D=
tp / T
150 °C
R th(j-s) =
2,19
K/W
FWD thermal model values
Copyright Vincotech
10
R (K/W)
6,49E-02
τ (s)
4,22E+00
1,67E-01
4,66E-01
9,76E-01
5,57E-02
5,62E-01
1,45E-02
3,00E-01
2,81E-03
1,17E-01
5,62E-04
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Protection Diode characteristics
FWD
Typical forward characteristics
Z th(j-s) = f(t p)
18
101
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F)
FWD
Transient thermal impedance as a function of pulse width
15
100
12
9
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
6
3
0
10-2
0
0,5
1
1,5
2
2,5
3
10-5
10-4
10-3
VF (V)
tp =
250
µs
10-2
10-1
100
101
t p (s)
25 °C
T j:
125 °C
D =
tp / T
150 °C
R th(j-s) =
3,01
K/W
FWD thermal model values
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11
R (K/W)
5,15E-02
τ (s)
9,38E+00
9,53E-02
8,91E-01
3,22E-01
1,25E-01
1,35E+00
2,97E-02
8,32E-01
8,19E-03
3,58E-01
1,78E-03
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Rectifier characteristics
Typical f orward charact erist ics
Rect if ier Diode
Rectif ier Diode
Z th(j-s) = f(t p)
21
101
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F)
Transient t hermal impedance as a f unct ion of pulse widt h
18
15
100
12
9
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
6
3
10-2
0
0
0,5
1
1,5
2
2,5
10-4
3
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D =
tp / T
125 °C
R th(j-s) =
2,09
K/W
150 °C
Diode thermal model values
R (K/W)
4,86E-02
1,03E+01
1,45E-01
6,91E-01
τ (s)
1,18E+00
6,09E-02
5,40E-01
1,88E-02
1,74E-01
1,96E-03
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
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07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switching Definitions
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(I C)
E = f(R G)
0,35
E (mWs)
E (mWs)
0,35
Eon
0,3
Eon
0,3
0,25
0,25
Eon
0,2
0,2
Eon
0,15
0,15
Eoff
0,1
Eoff
Eoff
0,1
Eoff
0,05
0,05
0
0
0
1
2
3
4
5
6
7
0
8
50
100
150
200
250
IC(A)
25
With an inductive load at
V CE =
400
V
V GE =
±15
V
R gon =
64
Ω
R goff =
64
Ω
T j:
°C
With an inductive load at
25
125 °C
V CE =
400
V
150 °C
V GE =
±15
V
4
A
IC =
Figure 3.
FWD
T j:
300
°C
125 °C
150 °C
Figure 4.
FWD
Typical reverse recovery energy loss as a function of collector current
Typical reverse recovery energy loss as a function of gate resistor
E rec = f(I c )
E rec = f(R G)
0,12
0,14
E (mWs)
E (mWs)
RG (Ω )
Erec
0,12
0,1
Erec
0,1
0,08
0,08
0,06
Erec
0,06
Erec
0,04
0,04
0,02
0,02
0
0
0
1
2
3
4
5
6
7
0
8
50
100
150
200
250
IC (A)
With an inductive load at
25
V CE =
400
V
V GE =
±15
V
R gon =
64
Ω
Copyright Vincotech
T j:
°C
With an inductive load at
25
125 °C
V CE=
400
V
150 °C
V GE=
±15
V
4
A
I C=
13
T j:
RG(Ω )
300
°C
125 °C
150 °C
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C )
t = f(R G)
1
t (μs)
t (μs)
1
tdon
tdoff
0,1
tdoff
0,1
tdon
tf
tf
tr
tr
0,01
0,01
0,001
0,001
0
1
2
3
4
5
6
7
0
8
50
100
150
200
250
I C(A)
300
RG (Ω)
With an inductive load at
With an inductive load at
Tj =
125
°C
Tj =
125
°C
V CE =
400
V
V CE =
400
V
±15
V
4
A
V GE =
±15
V
V GE =
R gon =
64
Ω
IC =
R goff =
64
Ω
Figure 7.
FWD
Figure 8.
FWD
t rr = f(I C )
t rr = f(R gon)
0,3
0,4
t rr(μs)
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr(μs)
Typical reverse recovery time as a function of collector current
trr
0,25
trr
0,35
0,3
trr
0,2
0,25
0,15
0,2
trr
0,15
0,1
0,1
0,05
0,05
0
0
0
1
2
3
4
5
6
7
8
0
50
V CE=
400
100
125 °C
V GE =
±15
V
150 °C
I C=
4
A
150
200
250
I C (A)
At
V CE =
400
V
V GE =
±15
V
R gon =
64
Ω
Copyright Vincotech
25
T j:
300
RGon(Ω)
°C
At
14
V
25
T j:
°C
125 °C
150 °C
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switching Definitions
Figure 9.
FWD
Figure 10.
FWD
Typical reverse recovery charge as a function of collector current
Typical reverse recovery charge as a function of IGBT turn on gate resistor
Q rr = f(I C)
Q rr = f(R gon)
Q rr (µ
µ C)
Q rr (µC)
0,6
Qrr
0,5
0,45
0,4
Qrr
0,35
0,4
0,3
0,3
0,25
Qrr
Qrr
0,2
0,2
0,15
0,1
0,1
6E-16
0,05
0
At
1
2
3
4
5
6
7
8
-0,1
0
0
50
100
150
200
250
I C (A)
At
V CE =
400
V
V GE =
±15
V
R gon =
64
Ω
25
T j:
V CE=
400
V
125 °C
°C
At
V GE =
±15
V
150 °C
I C=
4
A
Figure 11.
300
RGon(Ω)
FWD
25
T j:
°C
125 °C
150 °C
Figure 12.
FWD
Typical reverse recovery current as a function of IGBT turn on gate resistor
I RRM = f(I C )
I RRM = f(R gon)
5
I rrM (A)
I rrM (A)
Typical reverse recovery current as a function of collector current
IRRM
4,5
8
7
4
6
IRRM
3,5
5
3
4
2,5
IRRM
2
3
IRRM
1,5
2
1
1
0,5
0
0
0
1
2
3
4
5
6
7
0
8
50
100
150
200
250
At
V CE =
400
V
V GE =
±15
V
R gon =
64
Ω
Copyright Vincotech
25
T j:
300
RGon (Ω)
I C (A)
V CE=
400
V
125 °C
°C
At
V GE =
±15
V
150 °C
I C=
4
A
15
25
T j:
°C
125 °C
150 °C
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switching Definitions
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of
dI 0/dt ,dI rec /dt = f(I c )
IGBT t urn on gate resist or
500
direc / dt (A/µ
µ s)
direc / dt (A/µs)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
dI0/dt
450
dIrec/dt
400
350
900
dI0/dt
800
dIrec/dt
700
600
300
500
250
400
200
300
150
200
100
100
50
0
0
0
1
2
3
4
5
6
7
0
8
50
100
At
V CE =
400
V
V CE =
400
V
V GE =
±15
V
At
V GE =
±15
V
R gon =
64
Ω
I C=
4
A
Figure 15.
150
200
250
300
RGon(Ω)
I C (A)
IGBT
Reverse bias safe operating area
I C = f(V CE )
IC (A)
9
IC MAX
8
Ic
5
4
3
VCE MAX
MODULE
6
Ic CHIP
7
2
1
0
0
100
200
300
400
500
600
700
VCE(V)
At
175
°C
R gon =
Tj =
64
Ω
R goff =
64,015
Ω
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07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switching Definitions
General conditions
Tj
=
125 °C
R gon
=
64 Ω
R goff
=
64 Ω
Figure 1.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for E off)
Figure 2.
IGBT
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for E on)
225
125
%
tdoff
%
VCE
200
100
IC
175
VCE 90%
VGE 90%
150
75
IC
VGE
125
VCE
100
50
VGE
tEoff
75
25
tdon
50
IC 1%
25
0
0
VCE 3%
IC 10%
tEon
VGE 10%
-25
-25
-0,2
-0,1
0
0,1
0,2
2,9
0,3
3
3,1
3,2
3,3
time (us)
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
4
A
I C (100%) =
4
A
t doff =
0,098
µs
t don =
0,081
µs
t E off =
0,293
µs
t E on =
0,220
µs
Figure 3.
IGBT
Turn-off Switching Waveforms & definition of tf
Figure 4.
IGBT
Turn-on Switching Waveforms & definition of tr
125
225
%
fitted
%
100
3,4
time(us)
VCE
IC
IC
200
175
IC 90%
150
75
125
IC 60%
VCE
50
100
IC 40%
IC 90%
75
tr
25
50
IC10%
0
25
tf
IC 10%
0
-25
-0,1
-0,05
0
0,05
0,1
0,15
-25
2,95
0,2
time (us)
3
3,05
3,1
3,2
3,25
time(us)
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
4
A
I C (100%) =
4
A
tf =
0,047
µs
tr =
0,018
µs
Copyright Vincotech
3,15
17
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Figure 6.
IGBT
Turn-on Switching Waveforms & definition of tEon
125
200
%
Pon
%
IC 1%
175
Eoff
100
Poff
150
75
125
Eon
100
50
75
25
50
VGE 90%
25
tEoff
-25
-0,1
VCE 3%
VGE 10%
0
0
tEon
-25
0
0,1
0,2
0,3
2,9
3
3,1
P off (100%) =
1,59
kW
P on (100%) =
1,59
E off (100%) =
0,08
mJ
E on (100%) =
0,16
mJ
t E off =
0,29
µs
t E on =
0,22
µs
Figure 7.
3,2
3,3
time(us)
time (us)
kW
FWD
Turn-off Switching Waveforms & definition of trr
125
%
Id
100
75
trr
50
25
Vd
0
fitted
IRRM 10%
-25
-50
-75
IRRM 90%
-100
IRRM 100%
-125
3
3,05
3,1
3,15
3,2
3,25
3,3
3,35
time(us)
V d (100%) =
400
V
I d (100%) =
4
A
I RRM (100%) =
-4
A
t rr =
0,219
µs
Copyright Vincotech
18
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Q rr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec )
150
125
%
%
Id
100
Erec
Qrr
100
tQrr
50
tErec
75
0
50
-50
25
-100
0
-150
3
3,1
3,2
3,3
3,4
3,5
Prec
-25
3,6
3
3,1
3,2
3,3
time(us)
3,5
3,6
time(us)
I d (100%) =
4
A
P rec (100%) =
1,59
Q rr (100%) =
0,38
µC
E rec (100%) =
0,10
mJ
t Q rr =
0,44
µs
t E rec =
0,44
µs
Copyright Vincotech
3,4
19
kW
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switching Definitions
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of gate resistor
E = f(I C)
E = f(R G )
0,35
0,35
Eon
E (mWs)
E (mWs)
Typical switching energy losses as a function of collector current
0,3
Eon
0,25
Eon
0,3
0,25
Eon
0,2
0,2
0,15
0,15
0,1
0,1
Eoff
Eoff
Eoff
0,05
0,05
0
Eoff
0
0
2
4
6
8
10
12
0
I C(A)
25 °C
With an inductive load at
400
V
V CE =
V GE =
15/0
V
R gon =
32
Ω
R goff =
32
Ω
T j:
32
64
96
With an inductive load at
125 °C
V CE =
400
V
150 °C
V GE =
15/0
V
6
A
IC =
Figure 3.
FWD
128
RG (Ω )
T j:
125 °C
150 °C
Figure 4.
FWD
Typical reverse recovery energy loss as a function of gate resistor
E rec = f(I c)
E rec = f(R G )
E (mWs)
E (mWs)
Typical reverse recovery energy loss as a function of collector current
0,15
Erec
160
25 °C
0,15
0,12
0,12
0,09
0,09
Erec
Erec
0,06
0,06
0,03
0,03
Erec
0
0
0
2
4
6
8
10
0
12
32
64
96
128
IC (A)
With an inductive load at
25 °C
V CE =
400
V
V GE =
15/0
V
R gon =
32
Ω
Copyright Vincotech
T j:
With an inductive load at
125 °C
V CE=
400
V
150 °C
V GE=
15/0
V
6
A
I C=
20
RG(Ω )
160
25 °C
T j:
125 °C
150 °C
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R G )
t (μs)
1
t (μs)
1
tdoff
tdoff
0,1
0,1
tf
tr
tdon
tdon
0,01
0,01
tf
tr
0,001
0,001
0
2
4
6
8
10
0
12
32
64
96
128
With an inductive load at
160
RG (Ω)
I C(A)
With an inductive load at
Tj =
125
°C
Tj =
125
°C
V CE =
400
V
V CE =
400
V
15/0
V
6
A
V GE =
15/0
V
V GE =
R gon =
32
Ω
IC =
R goff =
32
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C)
t rr = f(R gon)
0,1
0,1
t rr(μs)
t rr(μs)
Typical reverse recovery time as a function of collector current
0,08
trr
0,08
trr
0,06
0,06
trr
trr
0,04
0,04
0,02
0,02
0
0
0
2
4
6
8
10
12
0
32
64
96
128
At
V CE=
400
V
V GE =
15/0
V
R gon =
32
Ω
Copyright Vincotech
25 °C
T j:
160
RGon(Ω)
I C (A)
At
V CE=
125 °C
V GE =
150 °C
I C=
21
400
V
15/0
V
6
A
25 °C
T j:
125 °C
150 °C
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switching Definitions
Figure 9.
FWD
Figure 10.
FWD
Typical reverse recovery charge as a function of collector current
Typical reverse recovery charge as a function of IGBT turn on gate resistor
Q rr = f(I C)
Q rr = f(R gon)
0,8
Q rr (µ
µ C)
Q rr (µC)
0,6
Qrr
0,5
Qrr
0,6
0,4
0,4
0,3
Qrr
Qrr
0,2
0,2
0,1
At
0
0
0
2
4
6
8
10
12
0
32
64
96
128
160
RGon(Ω)
IC (A)
At
400
V
V GE =
V CE=
15/0
V
R gon =
32
Ω
25 °C
T j:
At
V CE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
400
V
15/0
V
6
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical reverse recovery current as a function of IGBT turn on gate resistor
I RRM = f(I C)
I RRM = f(R gon)
16
I rrM (A)
I rrM (A)
Typical reverse recovery current as a function of collector current
IRRM
18
15
12
12
IRRM
IRRM
9
8
6
IRRM
4
3
0
0
0
2
4
6
8
10
0
12
32
64
96
128
At
V CE=
400
V
V GE =
15/0
V
R gon =
32
Ω
Copyright Vincotech
25 °C
T j:
160
RGon (Ω)
I C (A)
At
V CE=
125 °C
V GE =
150 °C
I C=
22
400
V
15/0
V
6
A
25 °C
T j:
125 °C
150 °C
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switching Definitions
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of
dI 0/dt ,dI rec/dt = f(I c)
IGBT turn on gate resistor
2000
direc / dt (A/µ
µ s)
di rec / dt (A/µs)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
dI0/dt
dIrec/dt
1600
3500
dI0/dt
dIrec/dt
3000
2500
1200
2000
1500
800
1000
400
500
0
0
0
2
4
6
8
10
0
12
32
64
At
V CE=
400
V
V GE =
15/0
V
At
V GE =
R gon =
32
Ω
I C=
Figure 15.
96
128
160
RGon(Ω)
I C (A)
V CE=
400
V
15/0
V
6
A
IGBT
Reverse bias safe operating area
I C = f(V CE)
IC (A)
35
MODULE
25
Ic CHIP
IC MAX
30
VCE MAX
Ic
20
15
10
5
0
0
100
200
300
400
500
600
700
VCE(V)
At
175
°C
R gon =
Tj =
32
Ω
R goff =
32
Ω
Copyright Vincotech
23
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switching Definitions
General conditions
Figure 1.
Tj
=
125 °C
R gon
R goff
=
=
32 Ω
32 Ω
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t doff , t Eoff (t Eoff = int egrat ing time f or Eoff)
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (t Eon = integrat ing time f or Eon)
125
350
tdoff
%
IC
%
VCE
300
100
VCE 90%
VGE 90%
250
75
200
IC
VGE
50
150
tEoff
VCE
100
25
tdon
IC 1%
0
0
-25
-0,2
-0,1
0
0,1
VGE
50
0,2
VGE 10%
-50
2,95
0,3
IC 10%
VCE 3%
tEon
3
3,05
3,1
time (us)
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
6
A
I C (100%) =
6
A
t doff =
0,191
µs
t don =
0,017
µs
t E off =
Figure 3.
0,235
µs
t E on =
Figure 4.
0,108
µs
IGBT
Turn-off Switching Waveforms & definition of tf
3,15
IGBT
Turn-on Switching Waveforms & definition of tr
350
125
%
time(us)
%
fitted
IC
IC
300
VCE
100
250
IC 90%
75
200
IC 60%
50
150
VCE
IC 40%
100
25
tr
IC 90%
50
IC10%
0
-25
0,05
tf
0,1
0,15
IC 10%
0
0,2
-50
2,95
0,25
3
3,05
time (us)
3,15
time(us)
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
6
A
I C (100%) =
6
A
tf =
0,004
µs
tr =
0,011
µs
Copyright Vincotech
3,1
24
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switching Definitions
Figure 5.
IGBT
Turn-off Switching Waveforms & definition of tEof f
Figure 6.
IGBT
Turn-on Switching Waveforms & definition of tEon
125
250
%
%
IC 1%
Eoff
100
Pon
200
Poff
75
150
50
100
25
Eon
50
VGE 90%
VCE 3%
VGE 10%
0
tEon
0
tEoff
-25
-0,1
0
0,1
0,2
-50
2,95
0,3
3
3,05
P off (100%) =
2,37
kW
P on (100%) =
2,37
E off (100%) =
0,06
mJ
E on (100%) =
0,21
mJ
t E off =
0,24
µs
t E on =
0,11
µs
Figure 7.
3,1
3,15
time(us)
time (us)
kW
FWD
Turn-off Switching Waveforms & definition of trr
150
Id
%
100
trr
50
0
fitted
Vd
IRRM 10%
-50
-100
-150
IRRM 90%
-200
IRRM 100%
-250
2,95
3
3,05
3,1
3,15
time(us)
V d (100%) =
400
V
I d (100%) =
6
A
I RRM (100%) =
-13
A
t rr =
0,064
µs
Copyright Vincotech
25
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
PFC Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Q rr)
100
FWD
150
150
%
Figure 9.
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec )
Id
%
Qrr
Prec
125
tQrr
50
Erec
100
0
tErec
75
-50
50
-100
25
-150
0
-200
-250
2,95
3
3,05
3,1
3,15
-25
3,2
3
time(us)
3,05
3,1
3,2
time(us)
I d (100%) =
6
A
P rec (100%) =
2,37
Q rr (100%) =
0,51
µC
E rec (100%) =
0,10
mJ
t Q rr =
0,16
µs
t E rec =
0,16
µs
Copyright Vincotech
3,15
26
kW
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste 17mm housing
10-0B06PPA004RC-L022A09
L022A09
L022A09
NN-NNNNNNNNNNNNNN
TTTTTTT WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTT
WWYY
UL Vinco
LLLLL
SSSS
Serial
Date code
SSSS
WWYY
Type
TTTT-TTT
Lot number
LLLLL
Outline
Pin table [mm]
Pin
X
Y
Func tion
1
24,7
0
DC-Rec t
2
21,7
0
DC-PFC
3
18,7
0
G27
4
15
0
DC-3
5
12
0
G15
6
9
0
DC-2
7
6
0
G13
8
3
0
DC-1
9
0
0
G11
10
0
3
Therm2
11
12
0
0
5,8
10,8
Therm1
G12
13
0
13,8
Ph1
14
5,7
13,8
G14
15
8,7
13,8
Ph2
16
14,4
13,8
Ph3
17
14,4
10,8
G16
18
19,7
9,3
DC+
19
22,9
13,8
PFC
20
27,9
13,8
ACIn1
21
27,9
6,95
ACIn2
22
23,05
6,95 DC+Rect
Copyright Vincotech
27
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Pinout
Identification
ID
Component
Voltage
Technology
Current
Function
T11-T16
IGBT
600V
4A
Inverter switch
T27
IGBT
650V
15A
PFC Switch
D27
FWD
650V
15A
PFC Diode
D47
Diode
650V
6A
PFC Switch
Protection
Diode
D31-D34
Diode
1600V
7A
Rectifier Diode
Rt
NTC
-
-
Thermistor
Copyright Vincotech
28
Comment
07 Apr. 2016 / Revision 3
10-0B06PPA004RC-L022A09
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
200
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 B packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-0B06PPA004RC-L022A09-D3-14
07 Apr. 2016
Inverter Switch SOA added
8
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
07 Apr. 2016 / Revision 3
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