30-F2166BA150RW-L267G09 -D2-14

30-F2166BA150RW-L267G09
datasheet
flow CON 2
1600 V / 150 A
Features
flow 2 17mm housing
● High Efficiency input rectifier
● Brake
● Complementary to flowPACK2
Schematic
Target applications
●
●
●
●
SMPS
Welding
UPS
Drives
Types
● 30-F2166BA150RW-L267G09
Maximum Ratings
Tj=25°C, unless otherwise specified
TParameter
j=
Condition
Symbol
Value
Unit
1200
V
112
A
300
A
291
W
Brake Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
VGES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S =80 °C
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Parameter
Conditions
Symbol
Value
Unit
1200
V
50
A
100
A
94
W
150
°C
Value
Unit
1200
V
15
A
15
A
33
W
150
°C
Value
Unit
1600
V
130
A
1650
A
T j = °C
13600
A s
T h = 80°C
143
W
150
°C
Brake Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T h = 80°C
T j = T jmax
T h = 80°C
Conditions
Symbol
Brake Switch Protection Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
IFRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
Rectifier Diode
Parameter
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Conditions
Symbol
V RRM
IF
I FSM
2
T j = T jmax
50 Hz Single Half Sine Wave
Surge current capability
I t
t p = 10 ms 50 Hz sine
Total power dissipation
P tot
T j = T jmax
Maximum Junction Temperature
T jmax
Copyright Vincotech
T h = 80°C
2
2
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Parameter
Conditions
Symbol
Value
Unit
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
V isol
DC voltage
t p=2s
>200
CTI
3
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Characteristic Values
Brake Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
5,1
5,8
6,4
1,53
1,90
1,97
Static
Gate-emitter threshold voltage
V GE(th)
V GE=V CE
0
25
125
25
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
15
V CEsat
0
I CES
20
I GES
125
-
150
2,30
25
1200
V
10
125
25
0
120
125
7,5
rg
µA
nA
Ω
6300
C ies
f=1 MHz
Reverse transfer capac itance
100
V
0
0
25
pF
270
C res
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W /mK
0,33
K/W
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 4 Ω
R gon = 4 Ω
t d(off)
15/0
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 8,7 µC
Q rFWD = 15,4 µC
4
600
100
25
125
25
125
25
125
25
125
25
125
25
125
54
55
35
38
533
634
53
107
7,141
9,512
6,332
10,171
ns
mWs
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Typ
Unit
Max
Static
Forward voltage
VF
Reverse leakage c urrent
Ir
50
25
1,85
125
1,89
25
1200
V
250
150
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,75
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
Copyright Vincotech
di /dt = 3488 A/µs
15/0
di /dt = 2550 A/µs
E rec
(di rf/dt )max
5
600
100
25
125
25
125
25
125
25
125
25
125
72
87
274
446
8,749
15,436
3,559
6,590
517
749
A
ns
µC
mWs
A/µs
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switch Protection Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Typ
Unit
Max
Static
Forward voltage
VF
Reverse leakage c urrent
Ir
170
1600
25
1,24
125
1,20
V
25
0,1
150
1,1
mA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,49
K/W
Value
Unit
Rectifier Diode
Parameter
Symbol
Conditions
V r [V] I F [A] T j [°C]
Min
Typ
Max
Static
Forward voltage
VF
Reverse leakage c urrent
Ir
170
1600
25
1,24
125
1,20
V
25
0,1
150
1,1
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,49
K/W
Value
Unit
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
100
R100=1486 Ω
Power dissipation constant
Typ
Max
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
6
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
200
I C (A)
I C (A)
200
150
150
100
100
50
50
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
25 °C
tp =
250
V GE =
15
V
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
T j:
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
100
Z t h(j
h(j--s)(K/W)
I C (A)
100
80
60
10-1
40
0,5
0,2
0,1
0,05
20
0,02
0,01
0,005
0
10-2
0
0
2
4
6
8
10
10-4
12
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
V CE =
0
V
125 °C
R th(j-s) =
T j:
Copyright Vincotech
10-1
100
101
t p (s)
102
tp / T
0,33
K/W
IGBT thermal model values
150 °C
R th (K/W)
7
6,80E-02
τ (s)
1,50E+00
9,16E-02
1,41E-01
1,25E-01
3,64E-02
2,35E-02
1,13E-02
1,82E-02
8,50E-04
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Diode Characteristics
FWD
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
I F = f(V F )
Z th(j-s) = f(t p)
150
Z t h(j
h(j--s) (K/W)
IF (A)
100
120
90
10-1
60
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
30
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,75
K/W
150 °C
FWD thermal model values
Copyright Vincotech
8
R (K/W)
3,50E-02
τ (s)
5,35E+00
7,36E-02
8,54E-01
1,83E-01
1,14E-01
3,18E-01
2,85E-02
8,17E-02
7,22E-03
5,49E-02
8,83E-04
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switch Protection Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
Z th(j-s) = f(t p)
25
Z t h(j
h(j--s) (K/W)
IF (A)
FWD
Transient thermal impedance as a function of pulse width
20
100
15
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
5
0
10-2
0
0,5
1
1,5
2
2,5
3
10-4
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
1032
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
2,12
K/W
150 °C
FWD thermal model values
Copyright Vincotech
9
R (K/W)
7,00E-02
τ (s)
3,23E+00
1,48E-01
4,03E-01
7,34E-01
6,67E-02
5,90E-01
2,04E-02
3,47E-01
4,32E-03
2,36E-01
8,05E-04
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Rectifier Diode Characteristics
Typical forward characteristics
Rectifier Diode
I F = f(V F )
Transient thermal impedance as a function of pulse width
Rectifier Diode
Z th(j-s) = f(t p)
600
ZZtth(j-s)
h( jj--s) (K/W)
(K/W)
IFF(A)
I (A)
100
500
400
10-1
300
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
200
100
10-2
0
0
0,5
1
1,5
2
10-4
2,5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,49
K/W
150 °C
Diode thermal model values
Copyright Vincotech
10
R (K/W)
6,58E-02
τ (s)
9,90E+00
1,06E-01
1,36E+00
1,12E-01
2,38E-01
1,47E-01
6,36E-02
4,25E-02
2,17E-02
1,64E-02
2,20E-03
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
11
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unction of collector current
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
20
E ( mWs)
E (mWs)
25
Eon
20
Eon
15
Eoff
Eon
Eo n
15
Eoff
10
E o ff
10
Eo ff
5
5
0
0
0
20
40
60
80
100
120
140
160
180
200
0
I C (A)
25 °C
With an induc tive load at
600
V
V CE =
15/0
V
V GE =
R gon =
4
Ω
R goff =
4
Ω
T j:
2
4
6
8
125 °C
150 °C
100
IC =
Figure 3.
FWD
10
12
14
16
R g ( Ω)
18
25 °C
With an inductive load at
600
V
V CE =
15/0
V
V GE =
T j:
125 °C
150 °C
A
Figure 4.
FWD
Typical reverse recovered energy loss as a f unction of collector current
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(I c)
E rec = f(r g )
8
E ( mWs)
E (mWs)
10
Erec
8
Erec
6
6
Erec
4
4
Erec
2
2
0
0
0
20
40
60
With an induc tive load at
600
V
V CE =
15/0
V
V GE =
R gon =
4
Copyright Vincotech
80
100
120
140
160
180
I C (A)
0
200
25 °C
T j:
2
4
6
With an inductive load at
600
V
V CE =
15/0
V
V GE =
125 °C
150 °C
Ω
IC=
12
100
8
10
12
14
16
r g (Ω)
18
25 °C
T j:
125 °C
150 °C
A
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
10
t ( μ s)
t ( μ s)
1
td(off )
td(off )
1
tf
0,1
tf
td(on)
td(on)
0,1
tr
tr
0,01
0,01
0
20
40
60
80
100
120
140
160
180
200
0
I C (A)
(A)
With an induc tive load at
125
°C
Tj=
2
4
6
V CE =
600
V
V CE =
600
V
V GE =
15/0
V
V GE =
15/0
V
IC =
100
A
R gon =
4
Ω
R goff =
4
Ω
8
10
12
14
16
r g (Ω)
18
With an inductive load at
125
°C
Tj=
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,8
0,8
t r r (μs)
t r r (μs)
Typical reverse recovery t ime as a f unction of collector current
trr
0,6
trr
0,6
trr
0,4
0,4
trr
0,2
0,2
0
0
0
20
40
60
80
100
120
140
160
180
200
0
I C (A)
At
600
V
V GE =
15/0
V
R gon =
4
Ω
V CE=
Copyright Vincotech
4
6
8
10
12
14
16
18
R g on (Ω)
25 °C
T j:
2
600
V
125 °C
V GE =
15/0
V
150 °C
IC=
100
A
At
13
V CE =
25 °C
T j:
125 °C
150 °C
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
25
16
Q r (µC)
Q r (μ C)
Typical recovered charge as a f unction of collector current
20
Qr
Qr
12
15
Qr
8
Qr
10
4
5
0
At
0
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
16
I C (A)
At
V CE =
600
V
V GE =
15/0
V
R gon =
4
Ω
25 °C
T j:
At
VCE=
600
V
125 °C
V GE =
15/0
V
150 °C
I C=
100
A
Figure 11.
FWD
18
R g o n (Ω)
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
120
I R M (A)
I R M (A)
120
IR M
90
90
IRM
IRM
60
60
IRM
30
30
0
0
0
At
50
100
600
V
V GE =
15/0
V
R gon =
4
Ω
V CE =
Copyright Vincotech
150
I C (A)
0
200
4
6
8
10
12
14
16
18
R g o n (Ω)
25 °C
T j:
2
600
V
125 °C
V GE =
15/0
V
150 °C
IC=
100
A
At
14
V CE =
25 °C
T j:
125 °C
150 °C
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
d i /d t (A/
(A/µ
µs)
4000
d i /dt (A/
(A/µs)
s)
diF / dt
dir r/dt
5000
diF / dt
di r r/ dt
4000
3000
3000
2000
2000
1000
1000
0
0
0
20
40
60
80
100
120
140
160
180
0
200
5
10
15
I C (A)
600
V
V GE =
15/0
V
R gon =
4
Ω
At
V CE =
25 °C
T j:
600
V
125 °C
V GE =
15/0
V
150 °C
I C=
100
A
At
V CE =
R g on (Ω)
20
25 °C
T j:
125 °C
150 °C
Switching Definitions
Figure 15.
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
250
I C MAX
I c CHIP
200
Ic
MODULE
150
100
V CE MAX
50
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
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15
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switching Definitions
General conditions
=
125 °C
=
4Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
4Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
125
200
tdoff
%
IC
%
VCE
100
150
VCE 90%
VGE 90%
75
VCE
IC
100
VGE
VGE
50
tdon
tEoff
50
25
IC 1%
VGE 10%
0
-25
-0,1
VCE 3%
IC 10%
0
tEon
-50
0,1
0,3
0,5
0,7
0,9
1,1
2,9
3
3,1
3,2
3,3
t (µs)
3,4
t (µs)
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
99
A
I C (100%) =
99
A
t doff =
0,634
µs
t don =
0,055
µs
t Eoff =
Figure 3.
0,997
µs
t Eon =
Figure 4.
0,352
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
200
125
fitted
%
%
VCE
IC
IC
175
100
150
IC 90%
75
125
VCE
IC 60%
100
IC 90%
50
IC 40%
75
25
tr
50
IC10%
0
25
tf
IC 10%
0
-25
0,3
0,4
0,5
0,6
0,7
0,8
0,9
-25
1
2,9
t ( µs)
3
3,1
3,2
V C (100%) =
600
V
V C (100%) =
600
I C (100%) =
99
A
I C (100%) =
99
A
tf=
0,107
µs
tr =
0,038
µs
Copyright Vincotech
16
3,3
t (µs)
3,4
V
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
175
%
100
Pon
%
IC 1%
Poff
150
Eoff
125
Eon
75
100
50
75
50
25
VGE 90%
25
VCE 3%
VGE 10%
0
tEoff
0
tEon
-25
-25
-0,1
0,1
0,3
0,5
0,7
0,9
2,9
1,1
3
3,1
3,2
P off (100%) =
59,64
kW
P on (100%) =
59,64
kW
E off (100%) =
10,17
mJ
E on (100%) =
9,51
mJ
t Eoff =
1,00
µs
t Eon =
0,35
µs
Figure 7.
3,3
3,4
3,5
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
125
%
Id
100
75
trr
50
25
fitted
Vd
0
IRRM 10%
-25
-50
-75
IRRM 90%
IRRM 100%
-100
-125
3
3,1
3,2
3,3
3,4
3,5
3,6
t (µs)
V d (100%) =
600
V
I d (100%) =
99
A
I RRM (100%) =
-87
A
t rr =
0,446
µs
Copyright Vincotech
17
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Brake Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
125
%
Qrr
Id
100
%
Erec
100
75
tQrr
50
tErec
75
25
50
0
-25
Prec
25
-50
0
-75
-100
3
3,1
3,2
3,3
3,4
3,5
3,6
3,7
-25
3,8
3
t (µs)
3,1
3,2
3,3
3,4
3,6
3,7
3,8
t (µs)
I d (100%) =
99
A
P rec (100%) =
59,64
kW
Q rr (100%) =
15,44
µC
E rec (100%) =
6,59
mJ
t Qrr =
0,61
µs
t Erec =
0,61
µs
Copyright Vincotech
3,5
18
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Ordering Code & Marking
Version
without thermal paste with solder pins
Ordering Code
30-F2166BA150RW-L267G09
NN-NNNNNNNNNNNNNN
TTTTTTTVV WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
in DataMatrix as
L267G09
in packaging barcode as
L267G09
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTTVV
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
Function
1
70
0
BG
26
9
20,1
R
2
67
0
BS
27
11,8
17,3
R
3
49,8
0
NEG BUS
28
11,8
20,1
R
4
47
0
NEG BUS
29
20,8
17,3
S
5
47
2,8
NEG BUS
30
20,8
20,1
S
6
47
5,6
NEG BUS
31
23,6
17,3
S
7
2,8
0
NEG OUT
32
23,6
20,1
S
8
2,8
2,8
NEG OUT
33
26,4
17,3
S
9
2,8
5,6
NEG OUT
34
26,4
20,1
S
10
5,6
0
NEG OUT
35
35,4
17,4
T
11
0
0
NEG OUT
36
35,4
20,2
T
12
0
2,8
NEG OUT
37
38,2
17,4
T
13
0
5,6
NEG OUT
38
38,2
20,2
T
14
0
8,4
NEG OUT
39
41
17,4
T
15
0
27,6
POS OUT
40
41
20,2
T
16
0
30,4
POS OUT
41
47
30,4
POS BUS
17
0
33,2
POS OUT
42
47
33,2
POS BUS
18
0
36
POS OUT
43
47
36
POS BUS
19
2,8
27,6
POS OUT
44
61,6
22,85
BR
20
2,8
30,4
POS OUT
45
64,4
22,85
BR
21
2,8
33,2
POS OUT
46
67,2
22,85
BR
22
2,8
36
POS OUT
47
70
22,85
BR
23
6,2
16,45
24
6,2
19,25
R
R
48
49
64,2
70,6
36,55
36,55
NTC1
NTC2
25
9
17,3
R
Copyright Vincotech
19
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1
IGBT
1200V
100A
Brake Switch
D7
FWD
1200V
50A
Brake Diode
D8
Rectifier
1200V
7,5A
Brake Sw. Protection Diode
D1-D6
Rectifier
1600V
170A
Rectifier Diode
Rt
NTC
-
-
Thermistor
Copyright Vincotech
20
Comment
05 Nov. 2015 / Revision 2
30-F2166BA150RW-L267G09
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
42
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-F2166BA150RW-L267G09 -D2-14
05 Nov. 2015
Outline correction
19
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
21
05 Nov. 2015 / Revision 2
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