10-0B066PA010SB-M993F09 datasheet flow PACK 0 B 600 V / 10 A Features ● ● ● ● flow 0 B 17 mm housing IGBT3 (600 V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Schematic Target applications ● Dedicated design for motor drive Types ● 10-0B066PA010SB-M993F09 Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 600 V 14 A tp limited by Tjmax 30 A Tj ≤ 150 °C, VCE ≤ 600 V 30 A 34 W ±20 V Inverter Switch Collector-emitter voltage Collector current Repetitive peak collector current VCES IC ICRM Turn off safe operating area Total power dissipation Ptot Gate-emitter voltage VGES Short circuit ratings Maximum Junction Temperature Copyright Vincotech Tj = Tjmax Ts = 80 °C Tj = Tjmax tSC Tj ≤ 150 °C VCC VGE = 15 V Ts = 80 °C Tjmax 1 6 µs 360 V 175 °C 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 600 V 17 A 20 A 33 W Inverter Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj = Tjmax Ts = 80 °C Repetitive peak forward current IFRM Power dissipation Ptot Maximum Junction Temperature Tjmax 175 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Tjop -40…+(Tjmax - 25) °C 4000 V Creepage distance min. 12,5 mm Clearance min. 12,5 mm Tj = Tjmax Ts = 80 °C Module Properties Thermal Properties Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech Visol DC Test Voltage CTI tp = 2 s > 200 2 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Characteristic Values Parameter Symbol Conditions VGE [V] VCE [V] VGS [V] VDS [V] Value IC [A] ID [A] Tj [°C] Unit Min Typ Max 5 5,8 6,5 1,1 1,50 1,79 1,9 Inverter Switch Static Gate-emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCEsat VGE=VCE 0,00015 25 15 10 25 150 V V Collector-emitter cut-off current ICES 0 600 25 0,6 µA Gate-emitter leakage current IGES 20 0 25 300 nA Internal gate resistance rg none Input capacitance Cies 551 Output capacitance Coes Reverse transfer capacitance Cres Gate charge Qg f = 1 MHz 0 25 25 40 Ω pF 17 15 480 10 25 62 nC 2,80 K/W Thermal Thermal resistance junction to sink Rth(j-s) Thermal grease thickness ≤ 50 µm λ = 1 W/mK Dynamic Turn-on delay time Rise time Turn-off delay time td(on) tr td(off) Rgoff = 32 Ω Rgon = 32 Ω ±15 Fall time tf Turn-on energy (per pulse) Eon Turn-off energy (per pulse) Eoff Copyright Vincotech QrFWD = 0,5 µC QrFWD = 0,9 µC 3 400 10 25 125 25 125 25 125 25 125 25 125 25 125 75 74 24 26 136 159 83 123 0,277 0,376 0,330 0,449 ns mWs 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Characteristic Values Parameter Symbol Conditions VGE [V] VCE [V] VGS [V] VDS [V] Value IC [A] ID [A] Tj [°C] Min Unit Typ Max 25 1,60 1,95 150 1,56 Inverter Diode Static Forward voltage VF Reverse leakage current Irm 10 600 25 27 V µA Thermal Thermal resistance chip to heatsink Rth(j-s) Thermal grease thickness≤50um λ = 1 W/mK 2,85 K/W Dynamic Peak recovery current IRRM Reverse recovery time trr Recovered charge Qr Reverse recovered energy Erec Peak rate of fall of recovery current di/dt = 400 A/µs di/dt = 467 A/µs ±15 (dirf/dt)max 400 10 25 125 25 125 25 125 25 125 25 125 5 7 194 270 0,466 0,896 0,132 0,255 21 65 25 21,5 A ns µC mWs A/µs Thermistor Rated resistance R Deviation of R100 ΔR/R Power dissipation R100 = 1486 Ω 100 P Power dissipation constant -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 4 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 30 I C (A) I C (A) 30 25 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs V GE = 15 V T j: 25 °C tp = 250 150 °C Tj = 150 V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 10 Z t h(j h(j--s)(K/W) I C (A) 101 8 6 100 4 0,5 0,2 0,1 0,05 2 0,02 0,01 0,005 0 10-1 10-5 0 0 2 4 6 8 10 12 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 150 °C 10-1 100 101 t p (s) 102 tp / T R th(j-s) = 2,80 K/W IGBT thermal model values Copyright Vincotech 5 R (K/W) 4,41E-02 τ (s) 7,36E+00 2,67E-01 6,41E-01 9,50E-01 1,13E-01 7,31E-01 1,82E-02 4,44E-01 3,63E-03 3,64E-01 3,98E-04 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area V GE = f(Q G) IGBT I C = f(V CE) 100 I C (A) 17,5 V G E (V) 120 V 100ms 15 1ms 10ms 10µs 100µs DC 480 V 10 12,5 10 1 7,5 5 0,1 2,5 0,01 0 0 10 20 30 40 50 60 70 80 1 90 10 100 1000 Q G (nC) V C E (V) At At I C= 10 A Short circuit duration as a function of V GE IGBT single pulse Ts = 80 ºC V GE = Tj = ±15 T jmax V ºC Typical short circuit current as a function of V GE t pSC = f(V GE) IGBT I SC = f(V GE) 180 14 I sc (A) t pS C (µS) D = 160 12 140 10 120 8 100 80 6 60 4 40 2 20 0 0 10 11 12 13 14 12 15 V G E (V) Copyright Vincotech 13 14 15 16 17 18 19 20 V G E (V) 6 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Diode Characteristics Typical forward characteristics FWD Transient thermal impedance as a function of pulse width FWD I F = f(V F) Z th(j-s) = f(t p) 101 Z th(j-s) (K/W) I F (A) 30 25 100 20 15 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10-1 5 0 0 0,5 1 250 tp = 1,5 2 2,5 µs 3 T j: 3,5 25 4 4,5 VF (V) 5 10-2 10-5 °C 150 °C 10-4 D= tp / T R th(j-s) = 2,85 10-3 10- 2 10-1 100 t p (s) 101 K/W FWD thermal model values R (K/W) τ (s) 4,35E-02 9,53E+00 2,14E-01 7,38E-01 7,92E-01 1,19E-01 7,47E-01 1,96E-02 6,00E-01 3,72E-03 4,58E-01 4,38E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 7 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switching Characteristics figure 1. IGBT figure 2. IGBT Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) 1 E ( mWs) E (mWs) Typical swit ching energy losses as a f unction of collector current 0,8 1 Eon 0,8 Eon Eoff Eon 0,6 0,6 E on E o ff Eoff 0,4 0,4 Eo ff 0,2 0,2 0 0 0 2 4 6 8 10 12 14 16 18 20 0 I C (A) 25 With an induc tive load at 400 V V CE = °C 125 °C T j: 20 40 60 V GE = ±15 V V GE = R gon = 32 Ω IC = R goff = 32 Ω figure 3. FWD ±15 V 10 A 80 100 25 With an inductive load at 400 V V CE = T j: 120 140 R g ( Ω) °C 125 °C figure 4. FWD Typical reverse recovered energy loss as a f unction of collector current Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) 0,3 E ( mWs) E (mWs) 0,4 Erec 0,25 0,3 Erec 0,2 Erec 0,15 0,2 Erec 0,1 0,1 0,05 0 0 0 2 4 6 With an induc tive load at 400 V V CE = ±15 V V GE = R gon = 32 Copyright Vincotech 8 10 12 14 25 T j: 16 18 I C (A) 0 20 °C 20 40 With an inductive load at 400 V V CE = ±15 V V GE = 125 °C Ω IC= 8 10 60 80 100 25 T j: 120 140 r g (Ω) °C 125 °C A 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switching Characteristics figure 5. IGBT figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) tf td(on) 0,1 td(on) td(off ) tf 0,1 tr tr 0,01 0,01 0,001 0,001 0 2 4 6 8 10 12 14 16 18 20 0 I C (A) (A) With an induc tive load at 125 °C Tj= 400 V V CE = 20 40 60 80 100 120 140 r g (Ω) With an inductive load at 125 °C Tj= 400 V V CE = V GE = ±15 V V GE = R gon = 32 Ω IC = R goff = 32 Ω figure 7. FWD ±15 V 10 A figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,4 t rr (μs) t rr (μs) 0,4 trr 0,3 trr 0,3 trr trr 0,2 0,2 0,1 0,1 0 0 0 2 4 6 8 10 12 14 16 18 20 0 I C (A) At 400 V V GE = ±15 V R gon = 32 Ω V CE= Copyright Vincotech 25 T j: 20 40 60 80 100 120 140 R g on (Ω) °C At 125 °C V CE = V GE = IC= 9 400 V ±15 V 10 A 25 T j: °C 125 °C 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switching Characteristics figure 9. FWD figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 1,6 1,2 Q r (µC) Q r (μ C) Typical recovered charge as a f unction of collector current Qr 1,2 Qr 0,9 0,8 0,6 Qr Qr 0,4 At 0,3 0 0 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 T j: 125 °C 120 I C (A) 400 V V GE = ±15 V R gon = 32 Ω At V CE = 25 T j: °C At VCE= 125 °C V GE = I C= figure 11. FWD 400 V ±15 V 10 A 25 °C figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 8 140 R g o n (Ω) I R M (A) I R M (A) 15 I RM 12 6 IRM 9 4 6 2 3 0 0 0 At 5 10 400 V V GE = ±15 V R gon = 32 Ω V CE = Copyright Vincotech 15 25 T j: I C (A) 0 20 20 40 60 80 100 120 140 R g o n (Ω) °C At 125 °C V CE = V GE = IC= 10 400 V ±15 V 10 A 25 T j: °C 125 °C 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switching Characteristics figure 13. FWD figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 600 d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current diF / dt dir r/dt 500 1500 diF / dt di r r/ dt 1250 400 1000 300 750 200 500 100 250 0 0 0 5 10 15 0 20 20 40 60 80 100 I C (A) 400 V V GE = ±15 V R gon = 32 Ω At V CE = 25 T j: °C At 125 °C V CE = V GE = I C= figure 15. 400 V ±15 V 10 A 25 T j: 120 140 R g o n (Ω) °C 125 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 25 I C MAX I c CHIP 20 Ic MODULE 15 10 V CE MAX 5 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 32 Ω R goff = 32 Ω Tj = Copyright Vincotech 11 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switching Characteristics Tj R gon = = 125 °C 32 Ω R goff = 32 Ω figure 1. IGBT figure 2. Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 125 200 tdoff % % IC 100 VGE 90% 150 VCE 90% 75 VGE VCE 100 IC VGE 50 tdon 50 tEoff 25 IC 1% VCE VGE 10% VCE 3% IC 10% 0 0 tEon -25 -0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 -50 2,94 0,7 3,01 3,08 3,15 3,22 3,29 3,36 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 400 V I C (100%) = 10 A t doff = t Eoff = 0,159 0,487 µs µs V GE (0%) = figure 3. 3,43 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 400 V I C (100%) = 10 A t don = t Eon = 0,074 0,237 µs µs V GE (0%) = IGBT figure 4. Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 175 125 fitted % % 150 100 IC IC IC 90% 125 75 100 IC 60% IC 90% 50 75 IC 40% tr VCE 50 25 IC10% VCE 25 0 IC 10% 0 tf -25 -0,04 0,03 0,1 0,17 0,24 0,31 -25 3,04 0,38 t ( µs) 3,054 3,068 3,082 3,11 t (µs) V C (100%) = 400 V V C (100%) = 400 I C (100%) = 10 A I C (100%) = 10 A tf= 0,123 µs tr = 0,026 µs Copyright Vincotech 3,096 12 V 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switching Characteristics figure 5. IGBT figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 200 % % IC 1% Pon 100 150 Poff Eoff 75 Eon 100 50 50 25 VGE 90% VCE 3% VGE 10% 0 0 tEon tEoff -25 -0,1 0 0,1 0,2 0,3 0,4 -50 2,95 0,5 3,02 3,09 P off (100%) = 4,00 kW P on (100%) = 4,00 kW E off (100%) = 0,45 mJ E on (100%) = 0,38 mJ t Eoff = 0,49 µs t Eon = 0,24 µs figure 7. 3,16 3,23 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % IF 100 trr 50 0 fitted VF IRRM 10% -50 IRRM 90% IRRM 100% -100 -150 3,02 3,1 3,18 3,26 3,34 3,42 t (µs) V F (100%) = 400 V I F (100%) = 10 A I RRM (100%) = -7 A t rr = 0,270 µs Copyright Vincotech 13 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Inverter Switching Characteristics figure 8. FWD figure 9. Turn-on Swit ching Wavef orms & def init ion of t Qr (t Qr = int egrat ing t ime f or Qr) FWD Turn-on Swit ching Wavef orms & def init ion of t Erec (t Erec = int egrating t ime f or Erec ) 125 150 % % IF Erec Qr 100 100 75 tQr 50 tErec 50 Prec 0 25 -50 0 -100 3 3,2 3,4 3,6 -25 3,8 3 t (µs) 3,2 3,4 3,8 t (µs) I F (100%) = 10 A P rec (100%) = 4,00 kW Q r (100%) = 0,90 µC E rec (100%) = 0,26 mJ t Qr = 0,56 µs t Erec = 0,56 µs Copyright Vincotech 3,6 14 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Ordering Code & Marking Version Ordering Code 10-0B066PA010SB-M993F09 without thermal paste 17mm housing NN-NNNNNNNNNN NNNN-TTTTTTTVV Vinco LLLLL WWYY SSSS UL Text Datamatrix Name Type&Ver Date code Vinco & Lot Serial&UL NN-NNNNNNNNNNNNNN TTTTTTTVV WWYY Vinco LLLLL SSSS UL Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 27,8 0 G6 2 24,9 0 E6 3 19,1 0 G5 4 16,2 0 E5 5 11,6 0 NTC2 6 7,6 0 NTC1 7 2,9 0 E4 8 0 0 G4 9 0 13,7 U 10 2,9 13,7 G1 11 12 8,8 14,6 13,7 13,7 DC+ V 13 17,5 13,7 G2 14 15 24,9 27,8 13,7 13,7 G3 W Copyright Vincotech 15 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Pinout Identification ID Component Voltage Current Function T1-T6 IGBT 600 V 10 A Inverter Switch D1-D6 FWD 600 V 10 A Inverter Diode NTC NTC Copyright Vincotech Comment Thermistor 16 08 Feb. 2016 / Revision 2 10-0B066PA010SB-M993F09 datasheet Packaging instruction Standard packaging quantity (SPQ)200 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow0 B packages see vincotech.com website. Package data Package data for flow0 B packages see vincotech.com website. Document No.: Date: 10-0B066PA010SB-M993F09-D2-14 08 Feb. 2016 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 08 Feb. 2016 / Revision 2