10 0B066PA010SB M993F09 D2 14

10-0B066PA010SB-M993F09
datasheet
flow PACK 0 B
600 V / 10 A
Features
●
●
●
●
flow 0 B 17 mm housing
IGBT3 (600 V) technology
Open emitter topology
New ultra-compact housing
Single-screw heat sink mounting
Schematic
Target applications
● Dedicated design for motor drive
Types
● 10-0B066PA010SB-M993F09
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
600
V
14
A
tp limited by Tjmax
30
A
Tj ≤ 150 °C, VCE ≤ 600 V
30
A
34
W
±20
V
Inverter Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
VCES
IC
ICRM
Turn off safe operating area
Total power dissipation
Ptot
Gate-emitter voltage
VGES
Short circuit ratings
Maximum Junction Temperature
Copyright Vincotech
Tj = Tjmax
Ts = 80 °C
Tj = Tjmax
tSC
Tj ≤ 150 °C
VCC
VGE = 15 V
Ts = 80 °C
Tjmax
1
6
µs
360
V
175
°C
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
600
V
17
A
20
A
33
W
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
Tj = Tjmax
Ts = 80 °C
Repetitive peak forward current
IFRM
Power dissipation
Ptot
Maximum Junction Temperature
Tjmax
175
°C
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Tjop
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min. 12,5
mm
Clearance
min. 12,5
mm
Tj = Tjmax
Ts = 80 °C
Module Properties
Thermal Properties
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
Visol
DC Test Voltage
CTI
tp = 2 s
> 200
2
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Characteristic Values
Parameter
Symbol
Conditions
VGE [V] VCE [V]
VGS [V] VDS [V]
Value
IC [A]
ID [A]
Tj [°C]
Unit
Min
Typ
Max
5
5,8
6,5
1,1
1,50
1,79
1,9
Inverter Switch
Static
Gate-emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCEsat
VGE=VCE
0,00015 25
15
10
25
150
V
V
Collector-emitter cut-off current
ICES
0
600
25
0,6
µA
Gate-emitter leakage current
IGES
20
0
25
300
nA
Internal gate resistance
rg
none
Input capacitance
Cies
551
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
Qg
f = 1 MHz
0
25
25
40
Ω
pF
17
15
480
10
25
62
nC
2,80
K/W
Thermal
Thermal resistance junction to sink
Rth(j-s)
Thermal grease
thickness ≤ 50 µm
λ = 1 W/mK
Dynamic
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
Rgoff = 32 Ω
Rgon = 32 Ω
±15
Fall time
tf
Turn-on energy (per pulse)
Eon
Turn-off energy (per pulse)
Eoff
Copyright Vincotech
QrFWD = 0,5 µC
QrFWD = 0,9 µC
3
400
10
25
125
25
125
25
125
25
125
25
125
25
125
75
74
24
26
136
159
83
123
0,277
0,376
0,330
0,449
ns
mWs
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Characteristic Values
Parameter
Symbol
Conditions
VGE [V] VCE [V]
VGS [V] VDS [V]
Value
IC [A]
ID [A]
Tj [°C]
Min
Unit
Typ
Max
25
1,60
1,95
150
1,56
Inverter Diode
Static
Forward voltage
VF
Reverse leakage current
Irm
10
600
25
27
V
µA
Thermal
Thermal resistance chip to heatsink
Rth(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
2,85
K/W
Dynamic
Peak recovery current
IRRM
Reverse recovery time
trr
Recovered charge
Qr
Reverse recovered energy
Erec
Peak rate of fall of recovery current
di/dt = 400 A/µs
di/dt = 467 A/µs
±15
(dirf/dt)max
400
10
25
125
25
125
25
125
25
125
25
125
5
7
194
270
0,466
0,896
0,132
0,255
21
65
25
21,5
A
ns
µC
mWs
A/µs
Thermistor
Rated resistance
R
Deviation of R100
ΔR/R
Power dissipation
R100 = 1486 Ω
100
P
Power dissipation constant
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
4
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
30
I C (A)
I C (A)
30
25
25
20
20
15
15
10
10
5
5
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
V GE =
15
V
T j:
25
°C
tp =
250
150 °C
Tj =
150
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
10
Z t h(j
h(j--s)(K/W)
I C (A)
101
8
6
100
4
0,5
0,2
0,1
0,05
2
0,02
0,01
0,005
0
10-1
10-5
0
0
2
4
6
8
10
12
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
T j:
25
°C
D =
150 °C
10-1
100
101
t p (s)
102
tp / T
R th(j-s) =
2,80
K/W
IGBT thermal model values
Copyright Vincotech
5
R (K/W)
4,41E-02
τ (s)
7,36E+00
2,67E-01
6,41E-01
9,50E-01
1,13E-01
7,31E-01
1,82E-02
4,44E-01
3,63E-03
3,64E-01
3,98E-04
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
V GE = f(Q G)
IGBT
I C = f(V CE)
100
I C (A)
17,5
V G E (V)
120 V
100ms
15
1ms
10ms
10µs
100µs
DC
480 V
10
12,5
10
1
7,5
5
0,1
2,5
0,01
0
0
10
20
30
40
50
60
70
80
1
90
10
100
1000
Q G (nC)
V C E (V)
At
At
I C=
10
A
Short circuit duration as a function of V GE
IGBT
single pulse
Ts =
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
Typical short circuit current as a function of V GE
t pSC = f(V GE)
IGBT
I SC = f(V GE)
180
14
I sc (A)
t pS C (µS)
D =
160
12
140
10
120
8
100
80
6
60
4
40
2
20
0
0
10
11
12
13
14
12
15
V G E (V)
Copyright Vincotech
13
14
15
16
17
18
19
20
V G E (V)
6
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Diode Characteristics
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width FWD
I F = f(V F)
Z th(j-s) = f(t p)
101
Z th(j-s) (K/W)
I F (A)
30
25
100
20
15
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-1
5
0
0
0,5
1
250
tp =
1,5
2
2,5
µs
3
T j:
3,5
25
4
4,5
VF (V)
5
10-2
10-5
°C
150 °C
10-4
D=
tp / T
R th(j-s) =
2,85
10-3
10- 2
10-1
100
t p (s)
101
K/W
FWD thermal model values
R (K/W)
τ (s)
4,35E-02
9,53E+00
2,14E-01
7,38E-01
7,92E-01
1,19E-01
7,47E-01
1,96E-02
6,00E-01
3,72E-03
4,58E-01
4,38E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
1
E ( mWs)
E (mWs)
Typical swit ching energy losses as a f unction of collector current
0,8
1
Eon
0,8
Eon
Eoff
Eon
0,6
0,6
E on
E o ff
Eoff
0,4
0,4
Eo ff
0,2
0,2
0
0
0
2
4
6
8
10
12
14
16
18
20
0
I C (A)
25
With an induc tive load at
400
V
V CE =
°C
125 °C
T j:
20
40
60
V GE =
±15
V
V GE =
R gon =
32
Ω
IC =
R goff =
32
Ω
figure 3.
FWD
±15
V
10
A
80
100
25
With an inductive load at
400
V
V CE =
T j:
120
140
R g ( Ω)
°C
125 °C
figure 4.
FWD
Typical reverse recovered energy loss as a f unction of collector current
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(I c)
E rec = f(r g )
0,3
E ( mWs)
E (mWs)
0,4
Erec
0,25
0,3
Erec
0,2
Erec
0,15
0,2
Erec
0,1
0,1
0,05
0
0
0
2
4
6
With an induc tive load at
400
V
V CE =
±15
V
V GE =
R gon =
32
Copyright Vincotech
8
10
12
14
25
T j:
16
18
I C (A)
0
20
°C
20
40
With an inductive load at
400
V
V CE =
±15
V
V GE =
125 °C
Ω
IC=
8
10
60
80
100
25
T j:
120
140
r g (Ω)
°C
125 °C
A
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(off )
tf
td(on)
0,1
td(on)
td(off )
tf
0,1
tr
tr
0,01
0,01
0,001
0,001
0
2
4
6
8
10
12
14
16
18
20
0
I C (A)
(A)
With an induc tive load at
125
°C
Tj=
400
V
V CE =
20
40
60
80
100
120
140
r g (Ω)
With an inductive load at
125
°C
Tj=
400
V
V CE =
V GE =
±15
V
V GE =
R gon =
32
Ω
IC =
R goff =
32
Ω
figure 7.
FWD
±15
V
10
A
figure 8.
FWD
Typical reverse recovery t ime as a f unction of collector current
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,4
t rr (μs)
t rr (μs)
0,4
trr
0,3
trr
0,3
trr
trr
0,2
0,2
0,1
0,1
0
0
0
2
4
6
8
10
12
14
16
18
20
0
I C (A)
At
400
V
V GE =
±15
V
R gon =
32
Ω
V CE=
Copyright Vincotech
25
T j:
20
40
60
80
100
120
140
R g on (Ω)
°C
At
125 °C
V CE =
V GE =
IC=
9
400
V
±15
V
10
A
25
T j:
°C
125 °C
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
1,6
1,2
Q r (µC)
Q r (μ C)
Typical recovered charge as a f unction of collector current
Qr
1,2
Qr
0,9
0,8
0,6
Qr
Qr
0,4
At
0,3
0
0
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
T j:
125 °C
120
I C (A)
400
V
V GE =
±15
V
R gon =
32
Ω
At
V CE =
25
T j:
°C
At
VCE=
125 °C
V GE =
I C=
figure 11.
FWD
400
V
±15
V
10
A
25
°C
figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
8
140
R g o n (Ω)
I R M (A)
I R M (A)
15
I RM
12
6
IRM
9
4
6
2
3
0
0
0
At
5
10
400
V
V GE =
±15
V
R gon =
32
Ω
V CE =
Copyright Vincotech
15
25
T j:
I C (A)
0
20
20
40
60
80
100
120
140
R g o n (Ω)
°C
At
125 °C
V CE =
V GE =
IC=
10
400
V
±15
V
10
A
25
T j:
°C
125 °C
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
600
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
diF / dt
dir r/dt
500
1500
diF / dt
di r r/ dt
1250
400
1000
300
750
200
500
100
250
0
0
0
5
10
15
0
20
20
40
60
80
100
I C (A)
400
V
V GE =
±15
V
R gon =
32
Ω
At
V CE =
25
T j:
°C
At
125 °C
V CE =
V GE =
I C=
figure 15.
400
V
±15
V
10
A
25
T j:
120
140
R g o n (Ω)
°C
125 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
25
I C MAX
I c CHIP
20
Ic
MODULE
15
10
V CE MAX
5
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
32
Ω
R goff =
32
Ω
Tj =
Copyright Vincotech
11
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switching Characteristics
Tj
R gon
=
=
125 °C
32 Ω
R goff
=
32 Ω
figure 1.
IGBT
figure 2.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
125
200
tdoff
%
%
IC
100
VGE 90%
150
VCE 90%
75
VGE
VCE
100
IC
VGE
50
tdon
50
tEoff
25
IC 1%
VCE
VGE 10%
VCE 3%
IC 10%
0
0
tEon
-25
-0,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
-50
2,94
0,7
3,01
3,08
3,15
3,22
3,29
3,36
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
400
V
I C (100%) =
10
A
t doff =
t Eoff =
0,159
0,487
µs
µs
V GE (0%) =
figure 3.
3,43
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
400
V
I C (100%) =
10
A
t don =
t Eon =
0,074
0,237
µs
µs
V GE (0%) =
IGBT
figure 4.
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
175
125
fitted
%
%
150
100
IC
IC
IC 90%
125
75
100
IC 60%
IC 90%
50
75
IC 40%
tr
VCE
50
25
IC10%
VCE
25
0
IC 10%
0
tf
-25
-0,04
0,03
0,1
0,17
0,24
0,31
-25
3,04
0,38
t ( µs)
3,054
3,068
3,082
3,11
t (µs)
V C (100%) =
400
V
V C (100%) =
400
I C (100%) =
10
A
I C (100%) =
10
A
tf=
0,123
µs
tr =
0,026
µs
Copyright Vincotech
3,096
12
V
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
200
%
%
IC 1%
Pon
100
150
Poff
Eoff
75
Eon
100
50
50
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEon
tEoff
-25
-0,1
0
0,1
0,2
0,3
0,4
-50
2,95
0,5
3,02
3,09
P off (100%) =
4,00
kW
P on (100%) =
4,00
kW
E off (100%) =
0,45
mJ
E on (100%) =
0,38
mJ
t Eoff =
0,49
µs
t Eon =
0,24
µs
figure 7.
3,16
3,23
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
IF
100
trr
50
0
fitted
VF
IRRM 10%
-50
IRRM 90%
IRRM 100%
-100
-150
3,02
3,1
3,18
3,26
3,34
3,42
t (µs)
V F (100%) =
400
V
I F (100%) =
10
A
I RRM (100%) =
-7
A
t rr =
0,270
µs
Copyright Vincotech
13
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
Turn-on Swit ching Wavef orms & def init ion of t Qr (t Qr = int egrat ing t ime f or Qr)
FWD
Turn-on Swit ching Wavef orms & def init ion of t Erec (t Erec = int egrating t ime f or Erec )
125
150
%
%
IF
Erec
Qr
100
100
75
tQr
50
tErec
50
Prec
0
25
-50
0
-100
3
3,2
3,4
3,6
-25
3,8
3
t (µs)
3,2
3,4
3,8
t (µs)
I F (100%) =
10
A
P rec (100%) =
4,00
kW
Q r (100%) =
0,90
µC
E rec (100%) =
0,26
mJ
t Qr =
0,56
µs
t Erec =
0,56
µs
Copyright Vincotech
3,6
14
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Ordering Code & Marking
Version
Ordering Code
10-0B066PA010SB-M993F09
without thermal paste 17mm housing
NN-NNNNNNNNNN
NNNN-TTTTTTTVV
Vinco LLLLL
WWYY SSSS UL
Text
Datamatrix
Name
Type&Ver
Date code
Vinco & Lot
Serial&UL
NN-NNNNNNNNNNNNNN
TTTTTTTVV
WWYY
Vinco LLLLL
SSSS UL
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
27,8
0
G6
2
24,9
0
E6
3
19,1
0
G5
4
16,2
0
E5
5
11,6
0
NTC2
6
7,6
0
NTC1
7
2,9
0
E4
8
0
0
G4
9
0
13,7
U
10
2,9
13,7
G1
11
12
8,8
14,6
13,7
13,7
DC+
V
13
17,5
13,7
G2
14
15
24,9
27,8
13,7
13,7
G3
W
Copyright Vincotech
15
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1-T6
IGBT
600 V
10 A
Inverter Switch
D1-D6
FWD
600 V
10 A
Inverter Diode
NTC
NTC
Copyright Vincotech
Comment
Thermistor
16
08 Feb. 2016 / Revision 2
10-0B066PA010SB-M993F09
datasheet
Packaging instruction
Standard packaging quantity (SPQ)200
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow0 B packages see vincotech.com website.
Package data
Package data for flow0 B packages see vincotech.com website.
Document No.:
Date:
10-0B066PA010SB-M993F09-D2-14
08 Feb. 2016
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
08 Feb. 2016 / Revision 2
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