V23990-P823-F-PM preliminary datasheet flowPACK 1 3rd gen 600V/50A Features flow1 housing ● Compact flow1 housing ● Trench Fieldstop IGBT3 Technology ● Compact and Low Inductance Design ● AlN substrate for improved performance ● Built-in NTC Target Applications Schematic ● Motor Drive ● Power Generation ● UPS Types ● V23990-P823-F Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V Inverter Transistor Collector-emitter break down voltage DC collector current Repetitive peak collector current VCE IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C Th=80°C Tc=80°C Tj≤150°C VGE=15V Tjmax 50 150 139 A A W ±20 V 6 360 μs V 175 °C 600 V Inverter Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature copyright by Vincotech Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C Th=80°C Tc=80°C 50 100 109 175 1 A A W °C Revision: 2 V23990-P823-F-PM preliminary datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+150 °C 4000 VDC Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage copyright by Vincotech Vis t=1min 2 Revision: 2 V23990-P823-F-PM preliminary datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 1,1 1,56 1,79 2,1 Inverter Transistor Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 600 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time VCE=VGE 0,0008 50 tf 0,35 650 Rgoff=8 Ω Rgon=8 Ω Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Vcc=480 Thermal resistance chip to heatsink per chip RthJH Thermal foil thickness=76um Kunze foil KU-ALF5 ±15 300 50 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω none tr td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 106 98 19 16 150 173 89 115 0,50 0,75 1,18 1,63 ns mWs 3140 f=1MHz 25 0 pF 200 Tj=25°C 93 ±15 50 Tj=25°C 310 nC 0,68 K/W Inverter Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current 50 Rgon=8 Ω ±15 300 di(rec)max /dt Reverse recovered energy Erec Thermal resistance chip to heatsink per chip RthJH 50 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,2 Thermal foil thickness=76um Kunze foil KU-ALF5 1,63 1,60 28 79 144 147 1,91 4,71 1357 4135 0,55 1,09 2,1 V A ns μC A/μs mWs 0,87 K/W Thermistor Rated resistance R25 Tol. ±5% Tj=25°C Deviation of R100 DR/R R100=435Ω Tc=100°C Power dissipation given Epcos-Typ B-value copyright by Vincotech P B(25/100) Tol. ±3% 3 4,46 4,7 4,94 kΩ 2,6 %/K Tj=25°C 210 mW Tj=25°C 3530 K Revision: 2 V23990-P823-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 1 Typical output characteristics IC = f(VCE) Output inverter IGBT Figure 2 Typical output characteristics IC = f(VCE) IC (A) 150 IC (A) 150 120 120 90 90 60 60 30 30 0 0 0 1 2 3 4 VCE (V) 5 0 At tp = Tj = 1 2 3 4 VCE (V) 5 At tp = Tj = 250 μs 25 °C VGE from 7 V to 17 V in steps of 1 V 250 μs 150 °C VGE from 7 V to 17 V in steps of 1 V Output inverter IGBT Figure 3 Typical transfer characteristics Ic = f(VGE) Output inverter FRED Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) 150 IC (A) IF (A) 50 40 Tj = 25°C 120 30 90 Tj = Tjmax-25°C Tj = Tjmax-25°C 20 60 10 30 Tj = 25°C 0 0 0 At tp = VCE = 2 250 10 copyright by Vincotech 4 6 8 V GE (V) 10 0 At tp = μs V 4 0,5 250 1 1,5 2 2,5 VF (V) 3 μs Revision: 2 V23990-P823-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 5 Typical switching energy losses as a function of collector current E = f(Ic) Output inverter IGBT Figure 6 Typical switching energy losses as a function of gate resistor E = f(RG) E (mWs) 3 E (mWs) 3 Eoff 2,5 2,5 Eon 2 2 Eoff 1,5 Eoff Eon 1,5 Eoff Eon 1 1 Eon: 0,5 0,5 0 0 0 20 40 60 80 I C (A) 100 0 With an inductive load at Tj = °C 25/150 VCE = 300 V VGE = ±15 V Rgon = 8 Ω Rgoff = 8 Ω 8 16 24 32 RG(Ω) 40 With an inductive load at Tj = °C 25/150 VCE = 300 V VGE = ±15 V IC = 50 A Output inverter IGBT Figure 7 Typical reverse recovery energy loss as a function of collector current Erec = f(Ic) Output inverter IGBT Figure 8 Typical reverse recovery energy loss as a function of gate resistor Erec = f(RG) 1,5 E (mWs) E (mWs) 2 1,2 1,5 Erec 0,9 Erec 1 0,6 Erec Erec 0,5 0,3 0 0 0 20 40 60 80 I C (A) 100 0 With an inductive load at Tj = 25/150 °C VCE = 300 V VGE = ±15 V Rgon = 8 Ω copyright by Vincotech 8 16 24 32 RG(Ω) 40 With an inductive load at Tj = 25/150 °C VCE = 300 V VGE = ±15 V IC = 50 A 5 Revision: 2 V23990-P823-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 9 Typical switching times as a function of collector current t = f(IC) Output inverter IGBT Figure 10 Typical switching times as a function of gate resistor t = f(RG) 1 tdoff t ( μs) t ( μs) 1 tdon tdoff tf tf tdon 0,1 0,1 tr tr 0,01 0,01 0,001 0,001 0 20 40 60 80 IC (A) 100 0 With an inductive load at Tj = 150 °C VCE = 300 V VGE = ±15 V Rgon = 8 Ω Rgoff = 8 Ω 8 16 24 RG (Ω ) 32 40 With an inductive load at Tj = 150 °C VCE = 300 V VGE = ±15 V IC = 50 A Output inverter FRED Figure 11 Typical reverse recovery time as a function of collector current trr = f(Ic) Output inverter FRED Figure 12 Typical reverse recovery time as a function of IGBT turn on gate resistor trr = f(Rgon) 0,2 t rr( μs) t rr( μs) 0,4 0,16 trr trr trr 0,3 trr 0,12 0,2 0,08 0,1 0,04 0 0 0 At Tj = VCE = VGE = Rgon = 20 25/150 300 ±15 8 copyright by Vincotech 40 60 80 I C (A) 100 0 At Tj = VR = IF = VGE = °C V V Ω 6 8 25/150 300 50 ±15 16 24 32 R Gon ( Ω ) 40 °C V A V Revision: 2 V23990-P823-F-PM preliminary datasheet Output Inverter Output inverter FRED Figure 13 Typical reverse recovery charge as a function of collector current Qrr = f(Ic) Output inverter FRED Figure 14 Typical reverse recovery charge as a function of IGBT turn on gate resistor Qrr = f(Rgon) 7 Qrr ( μC) Qrr ( μC) 6 Qrr 6 5 Qrr 5 4 4 3 3 Qrr Qrr 2 2 1 1 0 0 At 0 At Tj = VCE = VGE = Rgon = 20 25/150 300 ±15 8 40 60 80 I C (A) 100 0 8 At Tj = VR = IF = VGE = °C V V Ω Output inverter FRED Figure 15 Typical reverse recovery current as a function of collector current IRRM = f(Ic) 16 25/150 300 50 ±15 24 32 R Gon ( Ω) 40 °C V A V Output inverter FRED Figure 16 Typical reverse recovery current as a function of IGBT turn on gate resistor IRRM = f(Rgon) 150 IrrM (A) IrrM (A) 120 100 IRRM 120 80 90 60 60 40 IRRM IRRM 30 20 IRRM 0 0 0 At Tj = VCE = VGE = Rgon = 20 25/150 300 ±15 8 copyright by Vincotech 40 60 80 I C (A) 0 100 At Tj = VR = IF = VGE = °C V V Ω 7 8 25/150 300 50 ±15 16 24 32 R Gon ( Ω ) 40 °C V A V Revision: 2 V23990-P823-F-PM preliminary datasheet Output Inverter Output inverter FRED Figure 17 Typical rate of fall of forward and reverse recovery current as a function of collector current dI0/dt,dIrec/dt = f(Ic) 12000 dI0/dt direc / dt (A/ μs) direc / dt (A/ μs) 6000 Output inverter FRED Figure 18 Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(Rgon) dIrec/dt 5000 dI0/dt dIrec/dt 10000 4000 8000 3000 6000 2000 4000 1000 2000 0 0 0 At Tj = VCE = VGE = Rgon = 20 25/150 300 ±15 8 40 60 I C (A) 80 100 0 At Tj = VR = IF = VGE = °C V V Ω Output inverter IGBT Figure 19 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) 8 25/150 300 50 ±15 16 24 40 °C V A V Output inverter FRED Figure 20 FRED transient thermal impedance as a function of pulse width ZthJH = f(tp) 100 ZthJH (K/W) ZthJH (K/W) 100 R Gon ( Ω) 32 10-1 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-2 10-2 10-5 At D= RthJH = 10-4 tp / T 0,68 10-3 10-2 10-1 100 t p (s) 10-5 1011 At D= RthJH = K/W 10-4 10-3 tp / T 0,87 K/W IGBT thermal model values FRED thermal model values R (C/W) 0,02 0,08 0,18 0,26 0,08 0,06 R (C/W) 0,02 0,08 0,15 0,35 0,15 0,11 Tau (s) 9,9E+00 1,2E+00 1,5E-01 4,2E-02 4,6E-03 5,2E-04 copyright by Vincotech 8 10-2 10-1 100 t p (s) 1011 Tau (s) 9,5E+00 1,1E+00 1,4E-01 3,2E-02 4,1E-03 5,0E-04 Revision: 2 V23990-P823-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 21 Power dissipation as a function of heatsink temperature Ptot = f(Th) Output inverter IGBT Figure 22 Collector current as a function of heatsink temperature IC = f(Th) 60 IC (A) Ptot (W) 300 250 50 200 40 150 30 100 20 50 10 0 0 0 At Tj = 50 175 100 °C 150 Th ( o C) 200 0 At Tj = single heating overall heating VGE = Output inverter FRED Figure 23 Power dissipation as a function of heatsink temperature Ptot = f(Th) 50 175 15 100 Th ( o C) 200 °C V Output inverter FRED Figure 24 Forward current as a function of heatsink temperature IF = f(Th) 60 IF (A) Ptot (W) 240 150 200 50 160 40 120 30 80 20 40 10 0 0 0 At Tj = 50 175 copyright by Vincotech 100 °C 150 Th ( o C) 200 0 At Tj = single heating overall heating 9 50 175 100 150 Th ( o C) 200 °C Revision: 2 V23990-P823-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 25 Safe operating area as a function of collector-emitter voltage IC = f(VCE) Output inverter IGBT Figure 26 Gate voltage vs Gate charge VGE = f(Qg) VGE (V) IC (A) 20 10u 3 10 15 100u 100m DC 1m 10m 120V 102 10 480V 1 10 5 100 0 10-1 0 10 At D= Th = VGE = Tj = 101 102 V CE (V) 0 103 At IC = single pulse 80 ºC ±15 V Tjmax ºC copyright by Vincotech 10 100 50 200 300 Qg (nC) 400 A Revision: 2 V23990-P823-F-PM preliminary datasheet Thermistor Thermistor Figure 1 Typical NTC characteristic as a function of temperature RT = f(T) NTC-typical temperature characteristic R/Ω 5000 4000 3000 2000 1000 0 25 50 copyright by Vincotech 75 100 T (°C) 125 11 Revision: 2 V23990-P823-F-PM preliminary datasheet Switching Definitions Output Inverter General conditions = 150 °C Tj = 8Ω Rgon Rgoff = 8Ω Output inverter IGBT Figure 1 Output inverter IGBT Figure 2 Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) 280 140 Ic tdoff 120 240 Uce 100 200 Uce 90% Uge 90% 80 160 Uce 60 Ic % 120 % tEoff 40 80 20 Uge tdon Ic 1% 40 0 Ic10% Uge -20 0 -40 -0,2 0 0,2 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdoff = tEoff = time (us) -15 15 300 50 0,17 0,58 0,4 0,6 tEon -40 0,8 2,8 2,95 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdon = tEon = V V V A μs μs Output inverter IGBT Figure 3 Uce3% Uge10% 3,1 -15 15 300 50 0,10 0,22 time(us) 3,25 3,55 V V V A μs μs Output inverter IGBT Figure 4 Turn-off Switching Waveforms & definition of tf 3,4 Turn-on Switching Waveforms & definition of tr 140 260 fitted 120 220 Uce 100 Ic 180 Ic 90% 80 140 Ic 60% % 60 Uce % 100 Ic90% Ic 40% 40 tr 60 20 Ic10% tf 0 -20 0,05 20 Ic Ic10% -20 0,1 0,15 VC (100%) = IC (100%) = tf = copyright by Vincotech 300 50 0,12 0,2 0,25 time (us) 0,3 0,35 0,4 2,9 VC (100%) = IC (100%) = tr = V A μs 12 3 3,1 300 50 0,02 time(us) 3,2 3,3 3,4 V A μs Revision: 2 V23990-P823-F-PM preliminary datasheet Switching Definitions Output Inverter Output inverter IGBT Figure 5 Output inverter IGBT Figure 6 Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon 120 160 Eoff Poff Pon 100 130 80 100 Eon 60 70 % % 40 40 20 Uge10% Uce3% 10 0 tEon Uge90% -20 -0,2 tEoff 0 Poff (100%) = Eoff (100%) = tEoff = 0,2 15,03 1,63 0,58 time (us) Ic 1% 0,4 0,6 -20 2,95 0,8 3,03 3,19 3,27 Pon (100%) = Eon (100%) = tEon = Output inverter FRED 15,03 0,75 0,22 kW mJ μs Output inverter IGBT Figure 8 Turn-off Switching Waveforms & definition of trr 20 120 15 80 Id fitted trr 10 40 5 0 0 % -40 -5 -80 -10 -120 -15 -160 Uge (V) 3,35 time(us) kW mJ μs Figure 7 Gate voltage vs Gate charge (measured) 3,11 Ud IRRM10% IRRM90% -20 -250 IRRM100% -200 -100 VGEoff = VGEon = VC (100%) = IC (100%) = Qg = copyright by Vincotech 50 -15 15 300 50 479,76 200 Qg (nC) 350 500 3 650 3,08 3,16 3,24 3,32 3,4 time(us) Vd (100%) = Id (100%) = IRRM (100%) = trr = V V V A nC 13 300 50 -79 0,15 V A A μs Revision: 2 V23990-P823-F-PM preliminary datasheet Switching Definitions Output Inverter Output inverter FRED Figure 9 Output inverter FRED Figure 10 Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 150 120 Id Erec Qrr 100 100 50 80 tQint 0 60 % % tErec -50 40 -100 20 -150 0 Prec -200 -20 2,9 3,15 Id (100%) = Qrr (100%) = tQint = copyright by Vincotech 3,4 50 4,71 0,80 time(us) 3,65 3,9 4,15 2,9 Prec (100%) = Erec (100%) = tErec = A μC μs 14 3,15 3,4 15,03 1,09 0,80 time(us) 3,65 3,9 4,15 kW mJ μs Revision: 2 V23990-P823-F-PM preliminary datasheet Package Outline and Pinout Outline Pinout copyright by Vincotech 15 Revision: 2 V23990-P823-F-PM preliminary datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by Vincotech 16 Revision: 2