30 P2126PA050SC L287F09Y D1 14

30-P2126PA050SC-L287F09Y
datasheet
flow PACK 2
1200 V / 50 A
Features
flow 2 17mm housing
● IGBT4 (1200V) technology for low saturation losses
and improved EMC behavior
● Compact and low inductive design
● Integrated temperature sensor
Schematic
Target applications
● Industrial drives
Types
● 30-P2126PA050SC-L287F09Y
Maximum Ratings
Tj=25°C, unless otherwise specified
TParameter
j=
Condition
Symbol
Value
Unit
1200
V
65
A
150
A
185
W
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j=T jmax
T S=80°C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j=T jmax
Gate-emitter voltage
VGES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S=80°C
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
1200
V
64
A
100
A
127
W
175
°C
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
IFRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
Module Properties
Parameter
Conditions
Symbol
Value
Unit
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
V i sol
DC voltage
t p=2s
>200
CTI
2
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Characteristic Values
Inverter Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
5,3
5,8
6,3
1,58
1,88
2,07
Static
Gate-emitter threshold voltage
V GE(th) V GE=V CE
0,0017
25
125
25
Collec tor-emitter saturation voltage
15
V CEsat
50
Collec tor-emitter cut-off c urrent
I CES
0
1200
Gate-emitter leakage current
I GES
20
0
Internal gate resistance
Input capacitance
-
150
2,30
25
V
10
125
25
600
125
4
rg
µA
nA
Ω
2800
C ies
f=1MHz
Reverse transfer c apac itanc e
125
V
0
25
25
pF
100
C res
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,51
K/W
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 8 Ω
R gon = 8 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 4,8 µC
Q rFWD = 9,7 µC
3
600
50
25
150
25
150
25
150
25
150
25
150
25
150
96
101
17
24
214
281
87
122
2,701
4,211
2,744
4,531
ns
mWs
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,74
2,05
125
1,79
150
1,77
Static
Forward voltage
Reverse leakage current
50
VF
25
1200
Ir
V
10
150
-
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,75
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Qr
di /dt = 3866 A/µs
±15
di /dt = 2820 A/µs
E rec
(di rf/dt )max
600
50
25
150
25
150
25
150
25
150
25
150
81
85
139
316
4,797
9,708
1,790
3,972
4803
1209
A
ns
µC
mWs
A/µs
Thermistor
Copyright Vincotech
4
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
IGBT
Typical PTC characteristic
I C = f(V CE)
I C = f(V CE)
150
I C (A)
I C (A)
150
120
120
90
90
60
60
30
30
0
0
0
1
2
3
4
V C E (V)
0
5
1
2
3
250
µs
25 °C
tp =
250
V GE=
15
V
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
5
V C E (V)
tp =
T j:
4
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
50
Z t h(j
h(j--s)(K/W)
I C (A)
100
40
30
10-1
20
0,5
0,2
0,1
0,05
10
0,02
0,01
0,005
0
10-2
10-4
0
0
2
4
6
8
10
12
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
tp / T
V CE =
10
V
125 °C
R th(j-s) =
0,51
T j:
Copyright Vincotech
10-1
10
101
t p (s)
102
K/W
IGBT thermal model values
150 °C
R th (K/W)
5
7,12E-02
τ (s)
1,13E+00
1,15E-01
1,65E-01
2,22E-01
3,78E-02
6,59E-02
1,21E-02
3,86E-02
9,52E-04
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Diode Characteristics
FWD
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
I F = f(V F )
Z th(j-s) = f(t p)
150
Z t h(j
h(j--s) (K/W)
IF (A)
100
120
90
10-1
60
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
30
0
10-2
0
1
2
3
4
5
10-4
10-3
10-2
VF (V)
tp =
250
µs
10-1
100
101
1032
t p (s)
25 °C
T j:
125 °C
D=
tp / T
150 °C
R th(j-s) =
0,75
K/W
FWD thermal model values
R (K/W)
4,26E-02
τ (s)
3,64E+00
6,76E-02
6,18E-01
2,53E-01
8,65E-02
3,23E-01
2,11E-02
6,24E-02
3,47E-03
Thermistor Characteristics
Copyright Vincotech
6
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of collect or current
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
E (mWs)
E ( mWs)
10
Eon
8
10
Eon
8
Eoff
6
Eon
6
Eo n
E o ff
Eoff
4
4
2
2
Eoff
0
0
0
20
40
60
80
100
0
I C (A)
25 °C
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
T j:
8
16
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
50
A
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
E ( mWs)
6
Erec
40
150 °C
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E (mWs)
R g ( Ω)
125 °C
T j:
Typical reverse recovered energy loss as a f unct ion of collect or current
5
32
25 °C
With an inductive load at
600
V
V CE =
125 °C
24
5
4
Erec
4
3
3
2
Erec
2
Erec
1
1
0
0
0
20
40
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
8
Ω
Copyright Vincotech
60
80
I C (A)
0
100
25 °C
T j:
8
16
With an inductive load at
600
V
V CE =
125 °C
150 °C
V GE =
IC=
7
±15
V
50
A
24
32
r g (Ω)
40
25 °C
T j:
125 °C
150 °C
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(on)
td(off )
tf
tf
0,1
0,1
td(on)
tr
tr
0,01
0,01
0
20
40
60
80
100
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
8
16
V CE =
600
V
V CE =
600
V
±15
V
V GE =
±15
V
IC =
50
A
R gon =
8
Ω
8
Ω
32
Figure 7.
FWD
Figure 8.
40
FWD
t rr = f(I C)
t rr = f(R gon)
0,4
0,8
t rr (μs)
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr (μs)
Typical reverse recovery t ime as a f unct ion of collect or current
trr
0,3
trr
0,6
0,2
0,4
trr
trr
0,1
0,2
0
0
0
20
40
60
80
100
0
I C (A)
At
r g (Ω)
With an inductive load at
150
°C
Tj =
V GE =
R goff =
24
600
V
V GE =
±15
V
R gon =
8
Ω
V CE=
Copyright Vincotech
T j:
8
16
24
32
40
R g o n (Ω)
25 °C
At
V CE =
125 °C
V GE =
150 °C
IC=
8
600
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
16
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
12
Qr
Qr
12
9
8
6
Qr
Qr
4
3
0
At
0
0
20
40
60
80
100
0
8
16
24
32
40
R g on (Ω)
I C (A)
600
V
V GE =
±15
V
R gon =
8
Ω
At
V CE =
25 °C
T j:
At
VCE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
600
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
120
I R M (A)
I R M (A)
160
IRM
IRM
90
120
60
80
30
40
I RM
IRM
IRM
I RM
0
0
0
At
20
40
600
V
V GE =
±15
V
R gon =
8
Ω
V CE =
Copyright Vincotech
60
80
I C (A)
0
100
T j:
8
16
24
32
40
R go n (Ω)
25 °C
At
V CE =
125 °C
V GE =
150 °C
IC=
9
600
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
15000
6000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F / dt
di r r /dt
5000
di F / dt
di r r/ dt
12000
4000
9000
3000
6000
2000
3000
1000
0
0
0
20
40
60
80
0
100
8
16
24
32
I C (A)
600
V
V GE =
±15
V
R gon =
8
Ω
At
V CE =
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
600
V
±15
V
50
A
40
R g o n (Ω)
25 °C
T j:
125 °C
150 °C
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
120
I C MAX
I c CHIP
100
80
MODULE
60
V CE MAX
Ic
40
20
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
8
Ω
R goff =
8
Ω
Tj =
Copyright Vincotech
10
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Definitions
General conditions
=
150 °C
=
8Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
8Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
140
300
%
%
120
tdoff
IC
250
VCE
100
200
VCE 90%
VGE 90%
80
150
IC
VGE
60
VCE
100
VGE
40
tdon
tEoff
50
20
VGE 10%
IC 1%
VCE 3%
IC 10%
0
0
tEon
-20
-0,11
0,04
0,19
0,34
0,49
0,64
-50
2,85
0,79
t (µs)
2,94
3,03
3,12
3,21
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
50
A
I C (100%) =
50
A
t doff =
0,281
µs
t don =
0,101
µs
t Eoff =
Figure 3.
0,710
µs
t Eon =
Figure 4.
0,345
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,3
3,39
3,48
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
300
fitted
%
%
VCE
IC
IC
250
100
IC 90%
200
75
IC 60%
150
50
VCE
IC 40%
100
tr
25
IC 90%
50
IC10%
0
IC 10%
0
tf
-25
0,1
0,15
0,2
0,25
0,3
0,35
0,4
0,45
0,5
0,55
-50
0,6
2,9
t (µs)
3
3,1
3,2
3,4
t (µs)
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
50
A
I C (100%) =
50
A
tf=
0,122
µs
tr =
0,024
µs
Copyright Vincotech
3,3
11
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
250
%
Poff
100
%
IC 1%
Eoff
Pon
200
75
150
50
100
Eon
25
50
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
tEon
-25
-0,1
0,05
0,2
0,35
0,5
0,65
-50
2,95
0,8
3,04
3,13
3,22
P off (100%) =
30,10
kW
P on (100%) =
30,10
kW
E off (100%) =
4,53
mJ
E on (100%) =
4,21
mJ
t Eoff =
0,71
µs
t Eon =
0,345
µs
Figure 7.
3,31
3,4
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
0
Vd
IRRM 10%
-50
fitted
-100
IRRM 90%
IRRM 100%
-150
-200
2,9
3
3,1
3,2
3,3
3,4
3,5
3,6
3,7
t (µs)
V d (100%) =
600
V
I d (100%) =
50
A
I RRM (100%) =
-85
A
t rr =
0,316
µs
Copyright Vincotech
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02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
100
100
Erec
Qrr
Id
50
tQrr
tErec
75
0
Prec
50
-50
25
-100
0
-150
-200
2,8
3
3,2
3,4
3,6
3,8
4
4,2
-25
4,4
2,8
t (µs)
3
3,2
3,4
3,6
4
4,2
4,4
t (µs)
I d (100%) =
50
A
P rec (100%) =
30,10
kW
Q rr (100%) =
9,71
µC
E rec (100%) =
3,97
mJ
t Qrr =
0,63
µs
t Erec =
0,63
µs
Copyright Vincotech
3,8
13
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Ordering Code & Marking
Ordering Code
30-P2126PA050SC-L287F09Y
30-P2126PA050SC-L287F09Y-/3/
Version
without thermal paste 17mm housing
with thermal paste 17mm housing
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
in DataMatrix as
L287F09Y
L287F09Y-/3/
in packaging barcode as
L287F09Y
L287F09Y-/3/
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
1
0,9
0
S11
30
68,5
0
DC+3
2
0,9
3
G11
31
68,5
2,7
DC+3
3
3,9
0
DC-1
32
64,7
36
G16
4
3,9
2,7
DC-1
33
61,7
36
S16
5
3,9
5,4
DC-1
34
58,7
36
PH3
6
6,6
0
DC-1
35
56
36
PH3
7
15,2
0
DC+1
36
53,3
36
PH3
8
15,2
2,7
DC+1
37
50,6
36
PH3
9
17,9
0
DC+1
38
39,4
36
G14
10
17,9
2,7
DC+1
39
36,4
36
S14
11
26,2
0
S13
40
33,4
36
PH2
12
26,2
3
G13
41
30,7
36
PH2
13
29,2
0
DC-2
42
28
36
PH2
14
29,2
2,7
DC-2
43
25,3
36
PH2
15
29,2
5,4
DC-2
16
31,9
0
DC-2
44
45
14,1
11,1
36
36
G12
S12
17
32,2
4,05
NTC
46
8,1
36
PH1
18
40,5
0
DC+2
47
5,4
36
PH1
19
40,5
2,7
20
43,2
0
DC+2
DC+2
48
49
2,7
0
36
36
PH1
Ph1
21
43,2
2,7
DC+2
22
51,5
0
S15
23
51,5
3
G15
24
54,5
0
DC-3
25
54,5
2,7
DC-3
26
54,5
5,4
DC-3
27
57,2
0
DC-3
28
65,8
0
DC+3
29
65,8
2,7
DC+3
Copyright Vincotech
Function
14
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11,T12,T13,T14,T15,
T16
IGBT
1200V
50A
Inverter Switch
IGC50T120T8RL
D11,D12,D13,D14,D15,
D16
FWD
1200V
50A
Inverter Diode
IDC28D120T6M
NTC
NTC
-
-
Thermistor
Copyright Vincotech
15
02 Jun. 2015 / Revision 1
30-P2126PA050SC-L287F09Y
datasheet
Document No.:
Date:
30-P2126PA050SC-L287F09Y-D1-14
02 Jun. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
02 Jun. 2015 / Revision 1
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