30-P2126PA050SC-L287F09Y datasheet flow PACK 2 1200 V / 50 A Features flow 2 17mm housing ● IGBT4 (1200V) technology for low saturation losses and improved EMC behavior ● Compact and low inductive design ● Integrated temperature sensor Schematic Target applications ● Industrial drives Types ● 30-P2126PA050SC-L287F09Y Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 1200 V 65 A 150 A 185 W Inverter Switch Collector-emitter voltage Collector current V CES IC T j=T jmax T S=80°C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j=T jmax Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S=80°C 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Parameter Conditions Symbol Value Unit 1200 V 64 A 100 A 127 W 175 °C Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Total power dissipation P tot Maximum Junction Temperature T jmax T j=T jmax T h =80°C T j=T jmax T h=80°C Module Properties Parameter Conditions Symbol Value Unit Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V i sol DC voltage t p=2s >200 CTI 2 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Characteristic Values Inverter Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 5,3 5,8 6,3 1,58 1,88 2,07 Static Gate-emitter threshold voltage V GE(th) V GE=V CE 0,0017 25 125 25 Collec tor-emitter saturation voltage 15 V CEsat 50 Collec tor-emitter cut-off c urrent I CES 0 1200 Gate-emitter leakage current I GES 20 0 Internal gate resistance Input capacitance - 150 2,30 25 V 10 125 25 600 125 4 rg µA nA Ω 2800 C ies f=1MHz Reverse transfer c apac itanc e 125 V 0 25 25 pF 100 C res Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,51 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 8 Ω R gon = 8 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 4,8 µC Q rFWD = 9,7 µC 3 600 50 25 150 25 150 25 150 25 150 25 150 25 150 96 101 17 24 214 281 87 122 2,701 4,211 2,744 4,531 ns mWs 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,74 2,05 125 1,79 150 1,77 Static Forward voltage Reverse leakage current 50 VF 25 1200 Ir V 10 150 - µA Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,75 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Qr di /dt = 3866 A/µs ±15 di /dt = 2820 A/µs E rec (di rf/dt )max 600 50 25 150 25 150 25 150 25 150 25 150 81 85 139 316 4,797 9,708 1,790 3,972 4803 1209 A ns µC mWs A/µs Thermistor Copyright Vincotech 4 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics IGBT Typical PTC characteristic I C = f(V CE) I C = f(V CE) 150 I C (A) I C (A) 150 120 120 90 90 60 60 30 30 0 0 0 1 2 3 4 V C E (V) 0 5 1 2 3 250 µs 25 °C tp = 250 V GE= 15 V 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics 5 V C E (V) tp = T j: 4 IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 50 Z t h(j h(j--s)(K/W) I C (A) 100 40 30 10-1 20 0,5 0,2 0,1 0,05 10 0,02 0,01 0,005 0 10-2 10-4 0 0 2 4 6 8 10 12 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= tp / T V CE = 10 V 125 °C R th(j-s) = 0,51 T j: Copyright Vincotech 10-1 10 101 t p (s) 102 K/W IGBT thermal model values 150 °C R th (K/W) 5 7,12E-02 τ (s) 1,13E+00 1,15E-01 1,65E-01 2,22E-01 3,78E-02 6,59E-02 1,21E-02 3,86E-02 9,52E-04 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F ) Z th(j-s) = f(t p) 150 Z t h(j h(j--s) (K/W) IF (A) 100 120 90 10-1 60 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 30 0 10-2 0 1 2 3 4 5 10-4 10-3 10-2 VF (V) tp = 250 µs 10-1 100 101 1032 t p (s) 25 °C T j: 125 °C D= tp / T 150 °C R th(j-s) = 0,75 K/W FWD thermal model values R (K/W) 4,26E-02 τ (s) 3,64E+00 6,76E-02 6,18E-01 2,53E-01 8,65E-02 3,23E-01 2,11E-02 6,24E-02 3,47E-03 Thermistor Characteristics Copyright Vincotech 6 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of collect or current Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) E (mWs) E ( mWs) 10 Eon 8 10 Eon 8 Eoff 6 Eon 6 Eo n E o ff Eoff 4 4 2 2 Eoff 0 0 0 20 40 60 80 100 0 I C (A) 25 °C With an inductive load at 600 V V CE = V GE = ±15 V R gon = 8 Ω R goff = 8 Ω T j: 8 16 150 °C V GE = IC = Figure 3. FWD ±15 V 50 A Figure 4. FWD E rec = f(I c) E rec = f(r g ) E ( mWs) 6 Erec 40 150 °C Typical reverse recovered energy loss as a f unct ion of gat e resist or E (mWs) R g ( Ω) 125 °C T j: Typical reverse recovered energy loss as a f unct ion of collect or current 5 32 25 °C With an inductive load at 600 V V CE = 125 °C 24 5 4 Erec 4 3 3 2 Erec 2 Erec 1 1 0 0 0 20 40 With an inductive load at 600 V V CE = V GE = ±15 V R gon = 8 Ω Copyright Vincotech 60 80 I C (A) 0 100 25 °C T j: 8 16 With an inductive load at 600 V V CE = 125 °C 150 °C V GE = IC= 7 ±15 V 50 A 24 32 r g (Ω) 40 25 °C T j: 125 °C 150 °C 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(on) td(off ) tf tf 0,1 0,1 td(on) tr tr 0,01 0,01 0 20 40 60 80 100 0 I C (A) (A) With an inductive load at 150 °C Tj= 8 16 V CE = 600 V V CE = 600 V ±15 V V GE = ±15 V IC = 50 A R gon = 8 Ω 8 Ω 32 Figure 7. FWD Figure 8. 40 FWD t rr = f(I C) t rr = f(R gon) 0,4 0,8 t rr (μs) Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr (μs) Typical reverse recovery t ime as a f unct ion of collect or current trr 0,3 trr 0,6 0,2 0,4 trr trr 0,1 0,2 0 0 0 20 40 60 80 100 0 I C (A) At r g (Ω) With an inductive load at 150 °C Tj = V GE = R goff = 24 600 V V GE = ±15 V R gon = 8 Ω V CE= Copyright Vincotech T j: 8 16 24 32 40 R g o n (Ω) 25 °C At V CE = 125 °C V GE = 150 °C IC= 8 600 V ±15 V 50 A 25 °C T j: 125 °C 150 °C 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 16 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current 12 Qr Qr 12 9 8 6 Qr Qr 4 3 0 At 0 0 20 40 60 80 100 0 8 16 24 32 40 R g on (Ω) I C (A) 600 V V GE = ±15 V R gon = 8 Ω At V CE = 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 600 V ±15 V 50 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 120 I R M (A) I R M (A) 160 IRM IRM 90 120 60 80 30 40 I RM IRM IRM I RM 0 0 0 At 20 40 600 V V GE = ±15 V R gon = 8 Ω V CE = Copyright Vincotech 60 80 I C (A) 0 100 T j: 8 16 24 32 40 R go n (Ω) 25 °C At V CE = 125 °C V GE = 150 °C IC= 9 600 V ±15 V 50 A 25 °C T j: 125 °C 150 °C 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 15000 6000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current di F / dt di r r /dt 5000 di F / dt di r r/ dt 12000 4000 9000 3000 6000 2000 3000 1000 0 0 0 20 40 60 80 0 100 8 16 24 32 I C (A) 600 V V GE = ±15 V R gon = 8 Ω At V CE = 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 600 V ±15 V 50 A 40 R g o n (Ω) 25 °C T j: 125 °C 150 °C IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 120 I C MAX I c CHIP 100 80 MODULE 60 V CE MAX Ic 40 20 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 8 Ω R goff = 8 Ω Tj = Copyright Vincotech 10 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Switching Definitions General conditions = 150 °C = 8Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 8Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 140 300 % % 120 tdoff IC 250 VCE 100 200 VCE 90% VGE 90% 80 150 IC VGE 60 VCE 100 VGE 40 tdon tEoff 50 20 VGE 10% IC 1% VCE 3% IC 10% 0 0 tEon -20 -0,11 0,04 0,19 0,34 0,49 0,64 -50 2,85 0,79 t (µs) 2,94 3,03 3,12 3,21 V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 50 A I C (100%) = 50 A t doff = 0,281 µs t don = 0,101 µs t Eoff = Figure 3. 0,710 µs t Eon = Figure 4. 0,345 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,3 3,39 3,48 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 125 300 fitted % % VCE IC IC 250 100 IC 90% 200 75 IC 60% 150 50 VCE IC 40% 100 tr 25 IC 90% 50 IC10% 0 IC 10% 0 tf -25 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 0,55 -50 0,6 2,9 t (µs) 3 3,1 3,2 3,4 t (µs) V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 50 A I C (100%) = 50 A tf= 0,122 µs tr = 0,024 µs Copyright Vincotech 3,3 11 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 250 % Poff 100 % IC 1% Eoff Pon 200 75 150 50 100 Eon 25 50 VGE 90% VCE 3% VGE 10% 0 0 tEoff tEon -25 -0,1 0,05 0,2 0,35 0,5 0,65 -50 2,95 0,8 3,04 3,13 3,22 P off (100%) = 30,10 kW P on (100%) = 30,10 kW E off (100%) = 4,53 mJ E on (100%) = 4,21 mJ t Eoff = 0,71 µs t Eon = 0,345 µs Figure 7. 3,31 3,4 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 % Id 100 trr 50 0 Vd IRRM 10% -50 fitted -100 IRRM 90% IRRM 100% -150 -200 2,9 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7 t (µs) V d (100%) = 600 V I d (100%) = 50 A I RRM (100%) = -85 A t rr = 0,316 µs Copyright Vincotech 12 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % 100 100 Erec Qrr Id 50 tQrr tErec 75 0 Prec 50 -50 25 -100 0 -150 -200 2,8 3 3,2 3,4 3,6 3,8 4 4,2 -25 4,4 2,8 t (µs) 3 3,2 3,4 3,6 4 4,2 4,4 t (µs) I d (100%) = 50 A P rec (100%) = 30,10 kW Q rr (100%) = 9,71 µC E rec (100%) = 3,97 mJ t Qrr = 0,63 µs t Erec = 0,63 µs Copyright Vincotech 3,8 13 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Ordering Code & Marking Ordering Code 30-P2126PA050SC-L287F09Y 30-P2126PA050SC-L287F09Y-/3/ Version without thermal paste 17mm housing with thermal paste 17mm housing NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L287F09Y L287F09Y-/3/ in packaging barcode as L287F09Y L287F09Y-/3/ Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y 1 0,9 0 S11 30 68,5 0 DC+3 2 0,9 3 G11 31 68,5 2,7 DC+3 3 3,9 0 DC-1 32 64,7 36 G16 4 3,9 2,7 DC-1 33 61,7 36 S16 5 3,9 5,4 DC-1 34 58,7 36 PH3 6 6,6 0 DC-1 35 56 36 PH3 7 15,2 0 DC+1 36 53,3 36 PH3 8 15,2 2,7 DC+1 37 50,6 36 PH3 9 17,9 0 DC+1 38 39,4 36 G14 10 17,9 2,7 DC+1 39 36,4 36 S14 11 26,2 0 S13 40 33,4 36 PH2 12 26,2 3 G13 41 30,7 36 PH2 13 29,2 0 DC-2 42 28 36 PH2 14 29,2 2,7 DC-2 43 25,3 36 PH2 15 29,2 5,4 DC-2 16 31,9 0 DC-2 44 45 14,1 11,1 36 36 G12 S12 17 32,2 4,05 NTC 46 8,1 36 PH1 18 40,5 0 DC+2 47 5,4 36 PH1 19 40,5 2,7 20 43,2 0 DC+2 DC+2 48 49 2,7 0 36 36 PH1 Ph1 21 43,2 2,7 DC+2 22 51,5 0 S15 23 51,5 3 G15 24 54,5 0 DC-3 25 54,5 2,7 DC-3 26 54,5 5,4 DC-3 27 57,2 0 DC-3 28 65,8 0 DC+3 29 65,8 2,7 DC+3 Copyright Vincotech Function 14 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Pinout Identification ID Component Voltage Current Function Comment T11,T12,T13,T14,T15, T16 IGBT 1200V 50A Inverter Switch IGC50T120T8RL D11,D12,D13,D14,D15, D16 FWD 1200V 50A Inverter Diode IDC28D120T6M NTC NTC - - Thermistor Copyright Vincotech 15 02 Jun. 2015 / Revision 1 30-P2126PA050SC-L287F09Y datasheet Document No.: Date: 30-P2126PA050SC-L287F09Y-D1-14 02 Jun. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 16 02 Jun. 2015 / Revision 1