30 P2126PA075SC L288F09Y D1 14

30-P2126PA075SC-L288F09Y
datasheet
flow PACK 2
1200 V / 75 A
Features
flow 2 17mm housing
● IGBT4 (1200V) technology for low saturation losses
and improved EMC behavior
● Compact and low inductive design
● Integrated temperature sensor
Schematic
Target applications
● Industrial drives
Types
● 30-P2126PA075SC-L288F09Y
Maximum Ratings
Tj=25°C, unless otherwise specified
TParameter
j=
Condition
Symbol
Value
Unit
1200
V
85
A
225
A
232
W
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j=T jmax
T S=80°C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j=T jmax
Gate-emitter voltage
VGES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S=80°C
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
1200
V
85
A
150
A
154
W
175
°C
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
Module Properties
Copyright Vincotech
2
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Characteristic Values
Inverter Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
5,3
5,8
6,3
1,58
1,92
2,07
Static
Gate-emitter threshold voltage
V GE(th) V GE=V CE
Collec tor-emitter saturation voltage
V CEsat
0,0026
25
125
25
15
75
Collec tor-emitter cut-off c urrent
I CES
0
1200
Gate-emitter leakage current
I GES
20
0
Internal gate resistance
Input capacitance
-
150
2,39
25
V
1
125
25
120
125
10
rg
µA
nA
Ω
4300
C ies
f=1 MHz
Reverse transfer c apac itanc e
125
V
0
25
25
pF
160
C res
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,41
K/W
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
tf
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
196
150
t d(off)
Turn-on energy (per pulse)
178
150
25
R goff = 4 Ω
R gon = 4 Ω
±15
Fall time
25
600
75
34
36
25
284
150
373
25
150
63
124
Q rFWD = 6,6 µC
25
Q rFWD = 14,1 µC
150
9,393
25
4,009
150
6,991
3
ns
6,174
mWs
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
1,75
2,05
Static
25
Forward voltage
Reverse leakage current
75
VF
-
150
1,72
25
1200
Ir
125
V
14
150
-
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,62
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
E rec
Peak rate of fall of recovery current
di /dt = 2443 A/µs
di /dt = 2277 A/µs
±15
(di rf/dt )max
600
75
25
150
25
150
25
150
25
150
69
86
275
457
6,624
14,075
2,287
5,224
25
150
1859
724
A
ns
µC
mWs
A/µs
Thermistor
Copyright Vincotech
4
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
250
I C (A)
I C (A)
250
200
200
150
150
100
100
50
50
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
25 °C
tp =
250
V GE=
15
V
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
T j:
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
75
Z t h( jj--s)(K/W)
I C (A)
100
60
45
10-1
30
0,5
0,2
0,1
0,05
15
0,02
0,01
0,005
0
10-2
10-4
0
0
2
4
6
8
10
12
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
tp / T
V CE =
10
V
125 °C
R th(j-s) =
0,41
T j:
Copyright Vincotech
150 °C
10-1
100
101
t p (s)
102
K/W
IGBT thermal model values
R th (K/W)
5
6,08E-02
τ (s)
1,41E+00
9,91E-02
1,99E-01
1,78E-01
4,61E-02
5,03E-02
1,41E-02
2,16E-02
1,42E-03
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Diode Characteristics
FWD
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
I F = f(V F )
Z th(j-s) = f(t p)
250
Z t h(j
h(j--s) (K/W)
IF (A)
100
200
150
10-1
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
50
0
10-2
0
1
2
3
4
5
10-4
10-3
10-2
VF (V)
tp =
250
µs
10-1
100
101
102
t p (s)
25 °C
T j:
125 °C
D=
tp / T
150 °C
R th(j-s) =
0,62
K/W
FWD thermal model values
R (K/W)
4,35E-02
τ (s)
4,66E+00
7,48E-02
5,44E-01
1,95E-01
8,13E-02
2,13E-01
2,26E-02
4,51E-02
5,48E-03
4,51E-02
5,92E-04
Thermistor Characteristics
Copyright Vincotech
6
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of collect or current
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
E (mWs)
E (mWs)
25
Eon
16
Eon
20
12
Eon
15
Eo n
8
Eoff
Eoff
10
E off
Eoff
4
5
Eon
Eoff
Eon
0
0
0
30
60
90
120
150
0
I C (A)
25 °C
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
T j:
4
8
125 °C
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
75
A
12
R g ( Ω)
150 °C
Figure 4.
FWD
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(I c)
E rec = f(r g )
E (mWs)
8
Erec
20
125 °C
T j:
Typical reverse recovered energy loss as a f unct ion of collect or current
E (mWs)
16
25 °C
With an inductive load at
600
V
V CE =
6
5
Erec
6
4
3
4
Erec
Erec
2
2
1
Erec
0
0
0
Erec
30
60
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
4
Ω
Copyright Vincotech
90
120
I C (A)
0
150
25 °C
T j:
4
8
With an inductive load at
600
V
V CE =
125 °C
150 °C
V GE =
IC=
7
±15
V
75
A
12
16
r g (Ω)
20
25 °C
T j:
125 °C
150 °C
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
td(on)
td(on)
tf
tf
0,1
0,1
tr
tr
0,01
0,01
0
30
60
90
120
150
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
4
8
12
16
r g (Ω)
20
With an inductive load at
150
°C
Tj =
V CE =
600
V
V CE =
600
V
V GE =
±15
V
V GE =
±15
V
R gon =
4
Ω
IC =
75
A
R goff =
4
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,8
0,8
t rr (μs)
t rr (μs)
Typical reverse recovery t ime as a f unct ion of collect or current
0,6
trr
0,6
trr
0,4
trr
0,4
trr
0,2
0,2
trr
0
t
0 rr
0
30
60
90
120
150
0
I C (A)
At
600
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
T j:
4
8
12
16
20
R g o n (Ω)
25 °C
At
V CE =
125 °C
V GE =
150 °C
IC=
8
600
V
±15
V
75
A
25 °C
T j:
125 °C
150 °C
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
25
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
16
Qr
Qr
20
12
15
8
Qr
10
Qr
4
5
Qr
0
At
0
0
Qr
30
60
600
V
±15
V
R gon =
4
Ω
V CE =
120
150
0
4
8
12
16
20
R g on (Ω)
I C (A)
V GE =
At
90
25 °C
T j:
VCE=
At
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
600
V
±15
V
75
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
120
I R M (A)
I R M (A)
120
IRM
90
90
IRM
IRM
60
60
IRM
30
30
0
0
0
At
IR M
30
60
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
90
120
I C (A)
0
150
T j:
4
8
12
16
20
I RM R go n (Ω)
25 °C
At
V CE =
125 °C
V GE =
150 °C
IC=
9
600
V
±15
V
75
A
25 °C
T j:
125 °C
150 °C
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
4000
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F / dt
di r r /dt
4000
di F / dt
di r r/ dt
3000
3000
2000
2000
1000
1000
0
0
0
30
60
90
120
0
150
4
8
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
600
V
±15
V
75
A
12
16
20
R g o n (Ω)
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
180
I C MAX
I c CHIP
150
MODULE
120
Ic
90
60
V CE MAX
30
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
10
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Switching Definitions
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
125
250
tdoff
%
%
VCE
IC
100
200
VCE 90%
VGE 90%
75
150
IC
VCE
50
VGE
100
tEoff
tdon
VGE
25
50
IC 1%
VGE 10%
0
VCE 3%
IC 10%
0
tEon
-25
-0,1
-50
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
2,9
3
3,1
3,2
3,3
3,4
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
75
A
t doff =
0,373
t Eoff =
Figure 3.
0,772
V GE (0%) =
3,5
3,6
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
75
A
µs
t don =
0,195
µs
µs
t Eon =
Figure 4.
0,539
µs
V GE (0%) =
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
250
fitted
%
%
VCE
IC
100
IC
200
IC 90%
75
150
IC 60%
VCE
50
IC 90%
100
IC 40%
tr
25
50
IC10%
0
tf
IC 10%
0
-25
0,1
0,15
0,2
0,25
0,3
0,35
0,4
0,45
0,5
0,55
-50
3,15
0,6
t (µs)
3,2
3,25
3,3
3,35
3,45
3,5
t (µs)
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
75
A
I C (100%) =
75
A
tf=
0,120
µs
tr =
0,038
µs
Copyright Vincotech
3,4
11
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
175
%
%
Eoff
100
150
Pon
125
Eon
75
100
Poff
50
75
50
25
VGE 90%
IC 1%
25
VCE 3%
VGE 10%
0
tEoff
0
tEon
-25
-25
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
2,9
0,8
3
3,1
3,2
3,3
P off (100%) =
44,97
kW
P on (100%) =
44,97
kW
E off (100%) =
7,03
mJ
E on (100%) =
9,36
mJ
t Eoff =
0,77
µs
t Eon =
0,54
µs
Figure 7.
3,4
3,5
3,6
3,7
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
125
%
Id
100
75
trr
50
25
Vd
0
IRRM 10%
-25
-50
fitted
-75
IRRM 90%
IRRM 100%
-100
-125
3,1
3,2
3,3
3,4
3,5
3,6
3,7
3,8
t (µs)
V d (100%) =
600
V
I d (100%) =
75
A
I RRM (100%) =
-85
A
t rr =
0,455
µs
Copyright Vincotech
12
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
Qrr
Id
%
100
100
50
Erec
75
tQrr
tErec
0
50
-50
25
-100
0
-150
3
3,2
3,4
3,6
3,8
4
4,2
Prec
-25
4,4
3,2
t (µs)
3,4
3,6
3,8
I d (100%) =
75
A
P rec (100%) =
44,97
kW
13,41
µC
E rec (100%) =
4,88
mJ
t Qrr =
0,93
µs
t Erec =
0,93
µs
Copyright Vincotech
4,2
t (µs)
Q rr (100%) =
125°C
4
25
25 ooCC
25°C
13
125
125 ooCC
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Ordering Code & Marking
Version
without thermal paste 17mm housing
with thermal paste 17mm housing
Ordering Code
30-P2126PA075SC-L288F09Y
30-P2126PA075SC-L288F09Y-/3/
NN-NNNNNNNN NNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
in packaging barcode as
L288F09Y
L288F09Y-/3/
Name
Dat e code
UL & Vinco
Lot
Serial
N N-NN NN NN NNNNN NN N-NN NN NN NN
WWYY
UL Vinco
LLLLL
SSSS
Text
Datamatrix
in DataMatrix as
L288F09Y
L288F09Y-/3/
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Function
Pin
30
X
68,5
Y
0
Function
S11
G11
DC-1
DC-1
DC-1
DC-1
DC+1
DC+1
DC+1
31
32
33
34
35
36
37
38
68,5
64,7
61,7
58,7
56
53,3
50,6
39,4
2,7
36
36
36
36
36
36
36
DC+3
G16
S16
PH3
PH3
PH3
PH3
G14
0
2,7
5,4
0
DC+1
S13
G13
DC-2
DC-2
DC-2
DC-2
39
40
41
42
43
44
45
36,4
33,4
30,7
28
25,3
14,1
11,1
36
36
36
36
36
36
36
S14
PH2
PH2
PH2
PH2
G12
S12
32,2
40,5
40,5
43,2
4,05
0
2,7
0
NTC
DC+2
DC+2
DC+2
46
47
48
49
8,1
5,4
2,7
0
36
36
36
36
PH1
PH1
PH1
Ph1
21
22
23
24
43,2
51,5
51,5
54,5
2,7
0
3
0
DC+2
S15
G15
DC-3
25
26
27
28
54,5
54,5
57,2
65,8
2,7
5,4
0
0
DC-3
DC+3
29
65,8
2,7
DC+3
Pin
1
2
3
4
X
0,9
0,9
3,9
3,9
Y
0
3
0
2,7
5
6
7
8
9
10
11
12
3,9
6,6
15,2
15,2
17,9
17,9
26,2
26,2
5,4
0
0
2,7
0
2,7
0
3
13
14
15
16
29,2
29,2
29,2
31,9
17
18
19
20
Copyright Vincotech
DC+3
DC-3
DC-3
14
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11,T12,T13,T14,T15,
T16
IGBT
1200V
75A
Inverter Switch
IGC70T120T8RL
D11,D12,D13,D14,D15,
D16
FWD
1200V
75A
Inverter Diode
IDC40D120T6M
NTC
NTC
-
-
Thermistor
Copyright Vincotech
15
01 Jun. 2015 / Revision 1
30-P2126PA075SC-L288F09Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
42
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 2 packages see vincotech.com website.
Document No.:
Date:
30-P2126PA075SC-L288F09Y-D1-14
01 Jun. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
01 Jun. 2015 / Revision 1
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