30 P2126PA150NB L280F69Y D1 14

30-P2126PA150NB-L280F69Y
datasheet
flow PACK 2
1200 V / 150 A
Features
flow 2 17mm housing
● Mitsubishi Generation 6.1 (1200V) technology for
low saturation losses and improved EMC behavior
● Compact and low inductive design
● Integrated temperature sensor
Schematic
Target applications
● Industrial Drives
Types
● 30-P2126PA150NB-L280F69Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
150
A
300
A
319
W
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T s = 80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
Short circuit ratings
Maximum Junction Temperature
Copyright Vincotech
T s = 80 °C
±20
V
t SC
Tj ≤ 150°C
10
µs
V CC
VGE = 15V
850
V
175
°C
T jmax
1
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
1200
V
110
A
300
A
197
W
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
T s = 80°C
T j = T jmax
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
175
°C
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching
condition
T jop
-40…+(T jmax - 25)
°C
4000
V
Creepage distance
min. 12,7
mm
Clearance
min. 12,7
mm
T j = T jmax
T s = 80°C
Module Properties
Thermal Properties
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
V isol
DC Voltage
t p = 2s
> 200
CTI
2
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj[°C]
Unit
Min
Typ
Max
25
5,4
6
6,6
25
1,35
1,70
2,15
Inverter Switch
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
V GE=V CE
0,014
15
150
0
1,97
150
2,02
V
V
Collec tor-emitter c ut-off current
I CES
0
1200
25
520
µA
Gate-emitter leakage c urrent
I GES
15
0
25
1000
nA
Internal gate resistance
Input capacitance
C ies
Output capacitance
C oes
Reverse transfer capac itance
C res
Gate c harge
none
rg
Ω
15000
f=1 MHz
0
10
25
3000
pF
260
15
Qg
600
150
25
315
nC
0,30
K/W
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
t d(on)
R goff = 4 Ω
Rise time
Turn-off delay time
tr
R gon = 4 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 9,8 µC
Q rFWD = 22,5 µC
Q rFWD = 27,7 µC
3
600
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
93
93
93
12
14
14
164
206
217
54
84
94
3,275
5,448
6,152
8,195
12,580
13,972
ns
mWs
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj[°C]
Min
Unit
Typ
Max
25
2,65
3,3
125
2,33
150
2,21
Inverter Diode
Static
Forward voltage
Reverse leakage c urrent
150
VF
25
1200
Ir
V
50
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ = 3,4 W /mK
0,48
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
di /dt = 11991 A/µs
Reverse recovered energy
Peak rate of fall of recovery current
di /dt = 9881 A/µs ±15
di /dt = 9919 A/µs
E rec
(di rf/dt )max
600
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
193
231
239
118
149
298
9,779
22,517
27,727
4,514
11,033
13,728
14448
6217
5397
A
ns
µC
mWs
A/µs
Thermistor
Rated resistance
25
R
Deviation of R100
ΔR/R
Power dissipation
P
R100=1486 Ω
100
Power dissipation constant
22
-12
kΩ
+14
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100) Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
4
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
500
I C (A)
I C (A)
500
400
400
300
300
200
200
100
100
0
0
0
1
2
tp =
250
µs
V GE =
15
V
3
T j:
4
V C E (V)
0
5
1
2
4
5
V C E (V)
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
3
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
150
Z t h( jj--s)(K/W)
I C (A)
100
120
10-1
90
60
0,5
10-2
0,2
0,1
0,05
30
0,02
0,01
0,005
0
10-3
10-5
0
0
2
4
6
8
10
12
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
T j:
25 °C
D =
125 °C
R th(j-s) =
150 °C
Copyright Vincotech
10-1
100
101
t p (s)
102
tp / T
0,30
K/W
IGBT thermal model values
5
R (K/W)
3,25E-02
τ (s)
4,87E+00
4,48E-02
1,00E+00
8,25E-02
1,81E-01
1,03E-01
4,23E-02
2,08E-02
9,26E-03
1,39E-02
9,91E-04
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
V GE = f(Q G )
1000
I C (A)
20
V G E (V)
IGBT
I C = f(V CE)
600V
100ms
17,5
1ms
10ms
10µs
100µs
DC
100
15
12,5
10
10
1
7,5
5
0,1
2,5
0,01
0
0
100
200
300
1
400
10
100
1000
10000
Q G (nC)
V C E (V)
At
At
I C=
150
D =
A
Short circuit duration as a function of V GE
IGBT
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
Typical short circuit current as a function of V GE
t pSC = f(V GE)
IGBT
I SC = f(V GE)
16
1000
I sc (A)
t pS C (µS)
single pulse
Ts =
14
900
800
12
700
10
600
500
8
400
6
300
4
200
2
100
0
0
12
13
14
15
16
17
12
18
13
14
V G E (V)
15
16
17
18
V G E (V)
At
At
V CE =
850
V
V CE ≤
850
V
Tj ≤
150
ºC
Tj ≤
150
ºC
Copyright Vincotech
6
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Diode Characteristics
FWD
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
I F = f(V F)
Z th(j-s) = f(t p)
500
Z t h(j
h(j--s) (K/W)
IF (A)
100
400
300
10-1
200
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,48
K/W
150 °C
FWD thermal model values
R (K/W)
3,3940E-02
τ (s)
5,9820E+00
6,7470E-02
9,9750E-01
9,7960E-02
2,1040E-01
1,7660E-01
5,1180E-02
6,2590E-02
1,7090E-02
2,4720E-02
2,4350E-03
1,9140E-02
6,5960E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
25
E ( mWs)
E (mWs)
Typical swit ching energy losses as a f unction of collector current
Eoff
20
25
20
Eoff
15
Eon
Eon
15
Eoff
Eo n
Eoff
E off
Eon
Eon
10
10
Eo ff
Eo n
5
5
0
0
0
50
100
150
200
250
300
0
I C (A)
25 °C
With an induc tive load at
600
V
V CE =
±15
V
V GE =
R gon =
4
Ω
R goff =
4
Ω
8
150 °C
IC =
Figure 3.
FWD
150
12
A
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
25
16
E (mWs)
20
150 °C
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
20
R g ( Ω)
125 °C
T j:
Typical reverse recovered energy loss as a f unction of collector current
E (mWs)
16
25 °C
With an inductive load at
600
V
V CE =
±15
V
V GE =
125 °C
T j:
4
Erec
12
Erec
Erec
15
8
10
Erec
Erec
4
5
0
0
0
50
100
With an induc tive load at
600
V
V CE =
±15
V
V GE =
R gon =
4
Copyright Vincotech
150
200
250
I C (A)
0
300
25 °C
T j:
4
8
With an inductive load at
600
V
V CE =
±15
V
V GE =
125 °C
150 °C
Ω
IC=
8
150
12
16
r g (Ω)
20
25 °C
T j:
125 °C
150 °C
A
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(off )
td(on)
td(off )
td(on)
0,1
tf
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
0
50
100
150
200
250
300
0
(A)
I C (A)
With an induc tive load at
150
°C
Tj=
600
V
V CE =
4
8
12
16
r g (Ω)
20
With an inductive load at
150
°C
Tj=
600
V
V CE =
V GE =
±15
V
V GE =
±15
V
R gon =
4
Ω
IC =
150
A
R goff =
4
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unction of collector current
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,4
t rr (μs)
t r r (μs)
1
trr
trr
0,8
0,3
trr
0,6
trr
0,2
trr
trr
0,4
0,1
0,2
0
0
0
50
100
150
200
250
300
0
I C (A)
At
600
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
8
12
16
20
R g on (Ω)
25 °C
T j:
4
600
V
125 °C
V GE =
±15
V
150 °C
IC=
150
A
At
9
V CE =
25 °C
T j:
125 °C
150 °C
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
50
Q r (µC)
Q r (μ C)
Typical recovered charge as a f unction of collector current
40
Qr
40
Qr
30
Qr
Qr
30
20
20
Qr
Qr
10
10
At
0
0
0
50
100
150
200
250
300
0
4
8
12
16
20
R g o n (Ω)
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
VCE=
600
V
125 °C
V GE =
±15
V
150 °C
I C=
150
A
Figure 11.
FWD
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
400
I R M (A)
I R M (A)
300
IRM
IR M
250
300
I RM
200
200
150
100
IRM
I RM
IRM
100
50
0
0
0
At
50
100
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
150
200
250
I C (A)
0
300
8
12
16
20
R g o n (Ω)
25 °C
T j:
4
600
V
125 °C
V GE =
±15
V
150 °C
IC=
150
A
At
10
V CE =
25 °C
T j:
125 °C
150 °C
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
20000
di F / dt
dir r /dt
16000
35000
di F / dt
di r r/ dt
30000
25000
12000
20000
15000
8000
10000
4000
5000
0
0
0
50
100
150
200
250
0
300
4
8
12
16
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
V CE =
600
V
125 °C
V GE =
±15
V
150 °C
I C=
150
A
Figure 15.
20
R g o n (Ω)
25 °C
T j:
125 °C
150 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
350
I C MAX
I c CHIP
300
250
MODULE
200
Ic
150
V CE MAX
100
50
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
11
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switching Definitions
General conditions
=
125 °C
=
4Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
4Ω
Figure 2.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
125
300
tdoff
%
%
VCE
IC
250
100
VCE 90%
VGE 90%
200
75
150
IC
50
tEoff
100
VCE
VGE
tdon
25
50
IC 1%
0
-25
-0,1
0
0,1
0,2
VCE 3%
IC 10%
VGE 10%
0
VGE
tEon
0,3
0,4
0,5
0,6
0,7
-50
2,98
0,8
3,01
3,04
3,07
3,1
3,13
3,16
3,19
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
150
A
t doff =
0,206
t Eoff =
Figure 3.
0,751
V GE (0%) =
3,22
3,25
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
150
A
µs
t don =
0,093
µs
µs
t Eon =
Figure 4.
0,237
µs
V GE (0%) =
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
125
300
fitted
%
VCE
IC
%
IC
250
100
IC 90%
200
75
IC 60%
150
50
VCE
IC 40%
100
IC 90%
tr
25
50
IC10%
0
tf
IC 10%
0
-25
0
0,05
0,1
0,15
0,2
0,25
0,3
0,35
-50
3,05
0,4
t ( µs)
V C (100%) =
600
V
I C (100%) =
150
tf=
0,084
Copyright Vincotech
3,08
3,11
3,14
3,17
3,2
t (µs)
V C (100%) =
600
V
A
I C (100%) =
150
A
µs
tr =
0,014
µs
12
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
150
%
Poff
Eoff
100
Pon
%
IC 1%
125
Eon
100
75
75
50
50
25
25
VGE 90%
VGE 10%
0
tEoff
-25
-0,1
0,05
0,2
0,35
VCE 3%
0
0,5
0,65
-25
2,95
0,8
tEon
3
3,05
3,1
3,15
P off (100%) =
90,12
kW
P on (100%) =
90,12
kW
E off (100%) =
12,58
mJ
E on (100%) =
5,45
mJ
t Eoff =
0,75
µs
t Eon =
0,24
µs
Figure 7.
3,2
3,25
3,3
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
Id
100
trr
50
fitted
Vd
0
IRRM 10%
-50
-100
IRRM 90%
IRRM 100%
-150
-200
3,05
3,1
3,15
3,2
3,25
3,3
3,35
t (µs)
V d (100%) =
600
I d (100%) =
150
A
I RRM (100%) =
-231
A
t rr =
0,149
µs
Copyright Vincotech
V
13
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Figure 9.
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Id
Erec
Qrr
100
100
50
tErec
75
tQrr
0
50
-50
25
-100
0
Prec
-150
2,8
3
3,2
3,4
3,6
3,8
4
4,2
-25
4,4
3
t (µs)
3,2
3,4
3,6
4
4,2
t (µs)
I d (100%) =
150
A
P rec (100%) =
90,12
Q rr (100%) =
22,52
µC
E rec (100%) =
11,03
mJ
t Qrr =
1,00
µs
t Erec =
1,00
µs
Copyright Vincotech
3,8
14
kW
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Ordering Code & Marking
Version
with thermal paste 17mm housing with Press-fit pins
Ordering Code
30-P2126PA150NB-L280F69Y-/3/
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
Vin LLLLL SSSS
Text
Datamatrix
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
1
0,9
0
S11
30
68,5
0
Function
DC+3
2
0,9
3
G11
31
68,5
2,7
DC+3
3
3,9
0
DC-1
32
64,7
36
G16
4
3,9
2,7
DC-1
33
61,7
36
S16
5
3,9
5,4
DC-1
34
58,7
36
PH3
6
6,6
0
DC-1
35
56
36
PH3
7
15,2
0
DC+1
36
53,3
36
PH3
8
15,2
2,7
DC+1
37
50,6
36
PH3
9
17,9
0
DC+1
38
39,4
36
G14
10
17,9
3
DC+1
39
36,4
36
S14
11
12
13
26,2
26,2
29,2
0
2,7
0
S13
G13
40
41
33,4
30,7
36
36
PH2
PH2
DC-2
42
28
36
PH2
14
29,2
2,7
DC-2
43
25,3
36
PH2
15
29,2
5,4
DC-2
44
16
31,9
0
DC-2
45
14,1
11,1
36
36
G12
S12
17
32,2
4,05
NTC
46
8,1
36
PH1
18
40,5
0
DC+2
47
5,4
36
PH1
19
40,5
2,7
20
43,2
0
DC+2
DC+2
48
49
2,7
0
36
36
PH1
PH1
21
43,2
2,7
DC+2
22
51,5
0
S15
23
51,5
3
G15
24
54,5
0
DC-3
25
54,5
2,7
DC-3
26
54,5
5,4
DC-3
27
57,2
0
DC-3
28
65,8
0
29
65,8
2,7
DC+3
DC+3
Copyright Vincotech
15
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11,T12,T13
T14,T15,T16
IGBT
1200 V
150 A
Inverter Switch
D11,D12,D13
D14,D15,D16
FWD
1200 V
150 A
Inverter Diode
NTC
NTC
Copyright Vincotech
Comment
Thermistor
16
28 Jan. 2016 / Revision 1
30-P2126PA150NB-L280F69Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
42
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotec h.com website.
Document No.:
Date:
30-P2126PA150NB-L280F69Y-D1-14
28 Jan. 2016
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
28 Jan. 2016 / Revision 1
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