V23990-K439-F60-PM datasheet MiniSkiiP®PACK 3 1200 V / 100 A Features MiniSkiiP® 3 housing ● Solderless interconnection ● Mitsubishi Generation 6.1 technology Schematic Target applications ● Battery chargers ● UPS Types ● V23990-K439-F60-PM Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 1200 V 81 A 200 A 167 W Inverter Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T S =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S =80 °C 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Parameter Conditions Symbol Value Unit 1200 V 70 A 200 A 129 W 175 °C Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax T j = T jmax T h = 80°C T j = T jmax T h = 80°C Module Properties Parameter Conditions Symbol Value Unit Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V isol DC voltage t p=2s >200 CTI 2 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Characteristic Values Inverter Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 5,4 6 6,6 25 1,89 2,15 125 2,20 150 2,27 Static Gate-emitter threshold voltage Collec tor-emitter saturation voltage V GE(th) V GE=V CE 0,01 15 V CEsat 100 Collec tor-emitter c ut-off current I CES 0 1200 Gate-emitter leakage c urrent I GES 20 0 25 125 25 340 0,5 125 rg none Input capacitance C ies 10000 Output capacitance C oes Reverse transfer capac itance C res Internal gate resistance Gate c harge f=100 kHz 0 V 125 25 10 25 2000 V µA nA Ω pF 170 15 Qg 0 100 25 210 nC 0,57 K/W Thermal Thermal resistance junc tion to sink R th(j-s) Thermal grease thickness≤50um λ = 1 W /mK IGBT Switching Turn-on delay time t d(on) R goff = 8 Ω Rise time Turn-off delay time tr R gon = 8 Ω t d(off) ±15 Fall time Turn-on energy (per pulse) Turn-off energy (per pulse) Copyright Vincotech tf E on Q rFWD = 6,4 µC Q rFWD = 17,6 µC Q rFWD = 21 µC E off 3 600 100 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 102 100 101 56 59 58 156 195 210 46 82 94 7,873 11,529 12,564 5,280 8,134 9,080 ns mWs 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,57 3,3 125 2,31 150 2,19 Static Forward voltage Reverse leakage c urrent 100 VF 25 1200 Ir V 50 150 - µA Thermal Thermal resistance junc tion to sink R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK 0,73 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current di /dt = 881 A/µs di /dt = 1190 A/µs ±15 di /dt = 905 A/µs 600 100 E rec (di rf/dt )max 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 34 55 59 441 829 922 6,433 17,587 21,022 2,864 8,226 9,792 161 151 156 A ns µC mWs A/µs Thermistor Parameter Conditions Symbol V GE [V] Rated resistance Deviation of R100 R100 Value I C [A] T j[ °C] Min 25 R ΔR/R V CE [V] R100=1670 Ω 100 R Power dissipation constant Unit Typ Max 1 kΩ -2 +2 100 1670 Ω 25 0,76 mW/K -3 A-value A(25/50) 25 7,635*10 B-value B(25/100) 25 1,731*10 -5 Vincotech NTC Reference Copyright Vincotech % 1/K 1/K² E 4 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switch Characteristics Typical output characteristics Typical output characteristics IGBT I C = f(V CE) IGBT I C = f(V CE) 300 I C (A) I C (A) 300 250 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE = 15 V 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 100 Z t h( jj--s)(K/W) I C (A) 100 75 10-1 50 0,5 0,2 0,1 25 0,05 0,02 0,01 0,005 0 10-2 0 0 2 4 6 8 10 10-4 12 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= tp / T V CE = 10 V 125 °C R th(j-s) = 0,57 T j: Copyright Vincotech 150 °C 10-1 10 101 t p (s) 102 K/W IGBT thermal model values R th (K/W) 5 3,44E-02 τ (s) 4,47E+00 8,64E-02 9,79E-01 2,99E-01 1,86E-01 1,08E-01 5,73E-02 4,32E-02 9,99E-03 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switch Characteristics Gate voltage vs Gate charge IGBT V GE = f(Q G) V G E (V) 20 600V 17,5 15 12,5 10 7,5 5 2,5 0 0 50 100 150 200 250 Q G (nC) At I C= 100 Copyright Vincotech A 6 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F ) Z th(j-s) = f(t p) 300 Z t h(j h(j--s) (K/W) IF (A) 100 250 200 10-1 150 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,73 K/W 150 °C FWD thermal model values R (K/W) 3,26E-02 τ (s) 5,06E+00 1,07E-01 8,09E-01 3,56E-01 1,29E-01 1,29E-01 3,96E-02 6,34E-02 9,08E-03 4,64E-02 1,20E-03 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical PTC characteristic as a function of temperature R T = f(T ) PTC-typical temperature characteristic R (Ω) 2000 1800 1600 1400 1200 1000 25 50 75 100 125 T (°C) Copyright Vincotech 7 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of collect or current Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) E (mWs) E ( mWs) 40 Eon Eon 25 Eon Eon 20 30 Eo n 15 Eon 20 10 Eoff Eoff Eoff Eoff 10 E o ff 5 0 Eoff 0 0 25 50 75 100 125 150 175 200 0 I C (A) 25 °C With an inductive load at 600 V V CE = V GE = ±15 V R gon = 8 Ω R goff = 8 Ω 16 150 °C Figure 3. FWD V GE = ±15 V IC = 100 A 24 R g ( Ω) 150 °C Figure 4. FWD Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) 16 12 E ( mWs) 40 125 °C T j: Typical reverse recovered energy loss as a f unct ion of collect or current E (mWs) 32 25 °C With an inductive load at 600 V V CE = 125 °C T j: 8 Erec 12 9 Erec Erec Erec 6 8 Erec 4 3 Erec 0 0 0 25 50 75 With an inductive load at 600 V V CE = V GE = ±15 V R gon = 8 Ω Copyright Vincotech 100 125 150 175 I C (A) 0 200 25 °C T j: 8 16 With an inductive load at 600 V V CE = 125 °C 150 °C 8 V GE = ±15 V IC= 100 A 24 32 r g (Ω) 40 25 °C T j: 125 °C 150 °C 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) tr td(on) tf 0,1 td(off ) td(on) tr 0,1 tf 0,01 0,01 0,001 0,001 0 25 50 75 100 125 150 175 200 0 I C (A) (A) With an inductive load at 150 °C Tj= 8 16 V CE = 600 V V CE = 600 V ±15 V V GE = ±15 V IC = 100 A R gon = 8 Ω 8 Ω 32 r g (Ω) 40 With an inductive load at 150 °C Tj = V GE = R goff = 24 Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) t rr (μs) t rr (μs) 1,2 trr trr 1,2 trr trr 0,9 0,9 trr 0,6 trr 0,6 0,3 0,3 0 0 0 25 50 75 100 125 150 175 200 0 I C (A) At 600 V V GE = ±15 V R gon = 8 Ω V CE= Copyright Vincotech T j: 8 16 24 32 40 R g o n (Ω) 25 °C At V CE = 600 V 125 °C V GE = ±15 V 150 °C IC= 100 A 9 25 °C T j: 125 °C 150 °C 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 30 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current Qr 25 25 20 Qr Qr Qr 20 15 15 10 Qr 10 0 At Qr 5 5 0 0 25 50 75 100 125 150 175 200 0 8 16 24 32 40 R g on (Ω) I C (A) 600 V V GE = ±15 V R gon = 8 Ω At V CE = 25 °C T j: 600 V 125 °C V GE = ±15 V 150 °C I C= 100 A At Figure 11. FWD VCE= 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 80 I R M (A) I R M (A) 160 60 120 IRM I RM 80 40 IRM 20 40 0 0 IRM IRM IRM 0 At 25 50 75 600 V V GE = ±15 V R gon = 8 Ω V CE = Copyright Vincotech 100 125 150 175 I C (A) 0 200 T j: 8 16 24 32 40 R go n (Ω) 25 °C At V CE = 600 V 125 °C V GE = ±15 V 150 °C IC= 100 A 10 25 °C T j: 125 °C 150 °C 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 15000 3000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current di F / dt dir r/dt 2500 di F / dt di r r / dt 12000 2000 9000 1500 6000 1000 3000 500 0 0 0 25 50 75 100 125 150 175 0 200 8 16 I C (A) 600 V V GE = ±15 V R gon = 8 Ω At V CE = 25 °C T j: 600 V 125 °C V GE = ±15 V 150 °C I C= 100 A At Figure 15. V CE = 24 32 40 R g o n (Ω) IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 250 I C MAX I c CHIP 200 Ic MODULE 150 100 V CE MAX 50 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 8 Ω R goff = 8 Ω Tj = Copyright Vincotech 11 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switching Definitions General conditions = 150 °C = 8Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 8Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 120 200 tdoff % IC % VCE 100 150 VCE 90% VGE 90% 80 VCE 100 60 IC VGE tdon tEoff 40 50 20 IC 1% VGE tEon 0 -20 -0,2 VCE 3% IC 10% VGE 10% 0 -50 0 0,2 0,4 0,6 0,8 1 2,9 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 100 A t doff = 0,212 t Eoff = Figure 3. 0,850 V GE (0%) = 3 3,1 3,2 -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 100 A µs t don = 0,099 µs µs t Eon = Figure 4. 0,375 µs V GE (0%) = IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,3 3,4 3,5 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 125 200 fitted % IC 100 % VCE IC 150 IC 90% 75 VCE IC 90% 100 IC 60% 50 tr IC 40% 50 25 IC10% 0 IC 10% 0 tf -25 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 0,55 -50 0,6 3 t (µs) V C (100%) = 600 V I C (100%) = 100 A tf= 0,086 µs Copyright Vincotech 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4 3,45 t (µs) 12 V C (100%) = 600 V I C (100%) = 100 A tr = 0,030 µs 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 175 % Eoff 100 % IC 1% Pon 150 Poff 125 Eon 75 100 50 75 50 25 VGE 90% 25 VCE 3% VGE 10% 0 tEoff 0 tEon -25 -25 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 2,9 3 3,1 3,2 3,3 P off (100%) = 60,08 kW P on (100%) = 60,08 kW E off (100%) = 8,94 mJ E on (100%) = 9,38 mJ t Eoff = 0,85 µs t Eon = 0,37 µs Figure 7. 3,4 3,5 3,6 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr % 115 Id 90 65 trr 40 15 IRRM 10% Vd -10 -35 fitted -60 IRRM 90% IRRM 100% -85 -110 3 3,2 3,4 3,6 3,8 4 4,2 t (µs) V d (100%) = 600 V I d (100%) = 100 A I RRM (100%) = -87 A t rr = 0,764 µs Copyright Vincotech 13 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 120 150 % % Qrr Id Erec 100 100 80 tErec tQrr 50 60 40 0 20 Prec -50 0 -100 2,8 3 3,2 3,4 3,6 3,8 4 4,2 -20 4,4 3 t (µs) 3,2 3,4 3,6 3,8 4,2 4,4 t (µs) I d (100%) = 100 A P rec (100%) = 60,08 Q rr (100%) = 22,45 µC E rec (100%) = 10,49 mJ t Qrr = 1,00 µs t Erec = 1,00 µs Copyright Vincotech 4 14 kW 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Ordering Code & Marking Version with std lid (black V23990-K32-T-PM) with std lid (black V23990-K32-T-PM) and P12 NN-NNNNNNNNNN NNNN-TTTTTTTVV Vinco LLLLL WWYY SSSS UL Ordering Code V23990-K439-F60-/0A/-PM V23990-K439-F60-/1A/-PM Text Datamatrix in DataMatrix as K439F60 K439F60 in packaging barcode as K439F60-/0A/ K439F60-/1A/ Name Type&Ver Date code Vinco&Lot Serial&UL NN-NNNNNNNNNNNNNN TTTTTTTVV WWYY Vinco LLLLL SSSS UL Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Copyright Vincotech 15 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Pinout Identification ID Component Voltage Current Function T1,T2,T3,T4,T5,T6 IGBT 1200V 100A Inverter Switch D1,D2,D3,D4,D5,D6 FWD 1200V 100A Inverter Diode NTC NTC - - Thermistor Copyright Vincotech 16 Comment 23 Jul. 2015 / Revision 3 V23990-K439-F60-PM datasheet Packaging instruction Standard packaging quantity (SPQ) 48 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for MiniSkiiP® 3 packages see vincotech.com website. General datasheet General datasheet for MiniSkiiP® 3 packages see vincotech.com website. Document No.: Date: Modification: Pages V23990-K439-F60-D3-14 23 Jul. 2015 Features correction 1 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 23 Jul. 2015 / Revision 3