Reference Design for M909-F18 SiC Modules Quick Start Guide for M909-F18 SiC Modules PLEA SE PLACE PICTURE HERE Reference Design for M909-F18 SiC Modules Rev. 01 page 1 Table of Contents 1 Abstract ........................................................................................................... 4 2 An introduction to the EVA board ......................................................................... 5 3 Gate driver ....................................................................................................... 9 4 ISO PCB ..........................................................................................................15 5 Harware ..........................................................................................................23 Reference Design for M909-F18 SiC Modules Rev. 01 page 2 Revision History Revision Date 2015 - May Description Level 1 First release Page Number(s) 7 Disclaimer: The information in this document is given as an indication for the purpose of implementation only and shall not be regarded as any description or warranty of a certain functionality, condition or quality. The statements contained herein, including any recommendation, suggestion or methodology, are to be verified by the user before implementation, as operating conditions and environmental factors may vary. It shall be the sole responsibility of the recipient of this document to verify any function described herein in the given practical application. Vincotech GmbH hereby disclaims any and all warranties and liabilities of any kind (including without limitation warranties of noninfringement of intellectual property rights of any third party) with respect to any and all information given in this document. Reference Design for M909-F18 SiC Modules Rev. 01 page 3 1 Abstract This application note describes the Evaluation Driver Board for the M909 SiC power modules. To learn more about Vincotech modules, please visit www.vincotech.com. This board provides a plug-and-play solution for identifying this family of module's switching behavior and efficiency. Reference Design for M909-F18 SiC Modules Rev. 01 page 4 2 An introduction to the EVA board M909 SiC features: flow0 package 1200 V SiC 3 phase pseudo halfbridge 80 mΩ at 25 °C, 140 mΩ at 125 °C reverse current capability zero recovery charge up to 1000 V DC-link Figure 1: Block Scheme Reference Design for M909-F18 SiC Modules Rev. 01 page 5 Figure 2: M909 Power board electrical schematics Reference Design for M909-F18 SiC Modules Rev. 01 page 6 Designator Part type Manufacture/Part number Qty C1, C5, C15, C26, C27, C28 SMD Capacitor, X7R, 0603, 100 nF, 50 V Kemet/C0603C104K5RACTU 6 C2, C6, C16 SMD Capacitor, X5R, 0805, 10 µF, 16 V Murata/GRM219R61C106KA73 D 3 C3, C4, C7, C8, C9, C11, C13, C17, C18 Film Capacitor, 470 nF, 1000 V Faratronic/C823A474KB3F750 9 C10, C12, C14, C23, C24, C25 Film Capacitor, 1.2 µF, 630 V Faratronic/C822J125KB1F550 6 C19, C20, C21, C22 Electrolytic Capacitor, 470 µF, 500 V, D40mm Kemet/ALC10A471EH500 4 CS1, CS2, CS3 Current Transducer CKSR series 50 A LEM/CKSR 50-NP 3 J1, J3, J5, J7, J8, J9, J10, J11 Connector, Bushing, M5 Würth/7460408 8 J2, J4, J6 Wire-To-Board Connector, VERTICAL, SINGLE ROW, 4 WAY Molex/22-11-2042 3 L1, L2, L3 Inductor, 400 µH Magnetics/C055192A2 6 L4, L5, L6 Fixed Inductors 0.47 µH 20% Vishay/Dale/IHLP5050FDERR4 7M01 3 P1, P2, P3, P4, P5, P6, P7 Board-To-Board Connector, Vertical, Through Hole, Header, 2 Way, 2.54 mm Multicomp/2211S-02G 7 R1, R2 THT Resistor, 470 kΩ, 3 W, 5 % VISHAY BC COMPONENTS/ PR03000204703JAC00 2 PM1 PM Modul, SiC Power MOSFET’s and Schottky Diodes, 3 phase inverter topology with split output Vincotech/10-PZ126PA080MEM909F18Y 1 Table 1: The Power board’s Bill of material Reference Design for M909-F18 SiC Modules Rev. 01 page 7 Figure 3: M909 Power board assembly drawing Reference Design for M909-F18 SiC Modules Rev. 01 page 8 3 Gate driver sandwich construction triple pseudo halfbridge driver (bootstrap) switching frequency up to 500 kHz up to 1000 V DC-link Parameter Symbol Values Min. Max. Unit Note/Test Condition Power Supply Logic VDD 3.3 10 V - Power Supply Driver VCC 10 30 V - High Level Input Voltages PWM VINH 70 - % of VDD Low Level Input Voltages PWM VINL - 30 % of VDD Switching frequency PWM fSW - 500 kHz - High Level Output Voltages Temp VOH VDD−0.5 - V IOH = −2 mA Low Level Output Voltages Temp VOL - 0.4 V IOL = 2 mA Switching frequency Temp fSW 90 110 kHz - UVLO Threshold Logic VUVLOHVDD - 3.1 V - VUVLOLVDD 2.55 - V - UVLO Threshold Driver VUVLOHVCC - 10 V - VUVLOLVCC 8 - V - Quiescent Current Logic IQVDD 14 20 mA VDD = 5 V, VCC = 18 V, all inputs = Low Quiescent Current Driver IQVCC 13 22 mA VDD = 5 V, VCC = 18 V, all inputs = Low Table 2: The Gate Driver’s electrical parameters Reference Design for M909-F18 SiC Modules Rev. 01 page 9 Figure 4: The M909 gate driver electrical schematics Reference Design for M909-F18 SiC Modules Rev. 01 page 10 Designator Part type Manufacture/Part number Qty C1, C2, C5, C8, C9, C12, C16, C17, C21 SMD Capacitor, X7S, 1210, 10 µF, 50 V TDK/C3225X7S1H106M250AB 9 C3, C6, C10, C13, C18, C22 SMD Capacitor, X7R, 0603, 2.2 µF, 10 V Murata/GRM188R71A225KE15D 6 C4, C7, C11, C14, C19, C20, C23 SMD Capacitor, X7R, 0603, 100 nF, 50 V Kemet/C0603C104K5RACTU 7 C15 SMD Capacitor, X5R, 0805, 22 µF, 6.3 V Murata/GRM21BR60J226ME39L 1 C24, C25, C26, C27, C28, C29 SMD Capacitor, X7R, 0805, 470 nF, 50 V TDK/CGA4J3X7R1H474K125AB 6 C30, C31, C32, C33, C34, C35 DNP DNP - D1, D5, D6 Surface mount silicon ultra fast recovery rectifier 1.0 A, 1300 V Central Semiconductor/CMR1U-13M TR13 3 D2 Voltage regulator diodes 13 V NXP/PDZ13B 1 D3, D4 LED, SMD, SIDE VIEW, GREEN Kingbright/KA-4040CGSK 2 P1 Straight box header E-TEC/SLS-020-S920 1 20 pins P11, P12, P13, P14, P15, P16, P17 Board-To-Board Connector, Vertical, 2212S Series, Through Hole, Receptacle, 2, 2.54 mm Multicomp/2212S-02SG-85 7 R1, R7, R11, R12, R17, R24, R25, R35, R39 SMD Resistor, 0805, 10 Ω, 1% VISHAY DRALORIC/CRCW080510R0JNEAIF 9 R2 ,R5 SMD Resistor, 0603, 301 Ω, 1 % VISHAY DRALORIC/ CRCW0603301RFKEA 2 R3, R8, R13, R19, R26, R36 SMD Resistor, 0805, 3.9 Ω, 1 % VISHAY DRALORIC/CRCW08053R90JNEAIF 6 R4, R9, R14, R21, R27, R37 SMD Resistor, 0805, 1.2 Ω, 1 % VISHAY DRALORIC/CRCW08051R20JNEAIF 6 R6, R10, R15, R18, R22, R34, R38 SMD Resistor, 0603, 10 kΩ, 1 % MULTICOMP/MCWR06X1002FTL 7 R16 SMD Resistor, 0603, 499 kΩ, 1 % VISHAY DRALORIC / CRCW0603499KFKEA 1 Reference Design for M909-F18 SiC Modules Rev. 01 page 11 R20 SMD Resistor, 0603, 8.2 kΩ, 0.1 % Panasonic/ERA3AEB822V 1 R23 SMD Resistor, 0603, 2.2 kΩ, 0.1 % Panasonic/ERA3AEB222V 1 R28, R29, R30, R31, R32, R33 SMD Resistor, 0603, 0 Ω, 1% YAGEO/RC0603JR-070RL 6 U5 Voltage-Controlled Pulse 1 Width Modulator (PWM) Linear Technology/LTC6992CS61#TRMPBF U7 Shunt voltage references DIODES/LM4040B50FTA 1 U1, U2, U3, U4, U6, U8 Single Channel MOSFET Gate Driver IC Infineon/1EDI60N12AF 6 Table 3: The Gate Driver’s Bill of material Reference Design for M909-F18 SiC Modules Rev. 01 page 12 Figure 5: M909 Gate Driver top side assembly drawing Reference Design for M909-F18 SiC Modules Rev. 01 page 13 Figure 6: M909 Gate Driver bottom side assembly drawing Reference Design for M909-F18 SiC Modules Rev. 01 page 14 4 ISO PCB sandwich construction isolated power and gate drivers 5000 VAC isolation 3.3 or 5 V logic level compatible PWM input 9..36 V power input Parameter Symbol Values Min. Max. Unit Note/Test Conditional Power Supply Logic In VDD_IN 3 5.5 V - Power Supply Driver In VCC_IN 9 36 V - Power Supply Logic Out VDD 4.5 5.3 V - Power Supply Driver Out VCC 17.8 18.7 V - High Level Input Voltages Temp VINH 3.3 - V - Low Level Input Voltages Temp VINL - 2 V - High Level Output Voltages Temp VOH VDD−0.4 V IOH = −2 mA Low Level Output Voltages Temp VOL V IOL = 2 mA High Level Input Voltages PWM VINH V - Low Level Input Voltages VINL V - 0.4 2 Reference Design for M909-F18 SiC Modules 0.8 Rev. 01 page 15 PWM High Level Output Voltages PWM VOH Low Level Output Voltages PWM VOL Switching frequency Temp fSW Switching frequency PWM VDD−0.4 V IOH = −2 mA 0.4 V IOL = 2 mA - 5 MHz fSW - 5 MHz Quiescent Current Logic IQVDD 1 3 mA VDD = 5 V,VCC = 12 V,all inputs = Floating Quiescent Current Driver IQVCC 6 10 mA VDD = 5 V,VCC = 12 V,all inputs = Floating Table 1: The Isolator’s electrical parameters Reference Design for M909-F18 SiC Modules Rev. 01 page 16 Figure 7: The M909 ISO board electrical schematics Reference Design for M909-F18 SiC Modules Rev. 01 page 17 Designator Part type Manufacture/Part number Qty C1, C2, C3, C7, C11 SMD Capacitor, X7R, 0603, 100 nF,50 V KEMET/C0603C104K5RACTU 5 C4, C5, C6 SMD Capacitor, X7R, 0603, 2.2 µF,10 V MURATA/GRM188R71A225KE15D 3 C8, C9, C10, C14 SMD Capacitor, X7S, 1210, 10 µF,50 V TDK/C3225X7S1H106M250AB 4 C12, C13 SMD Capacitor, Tantalum, Size D,47 µF, 35 V KEMET/T495X476K035ATE300 2 C15 SMD Capacitor, X5R, 1210, 47 µF, 16 V MURATA/GRM32ER61C476KE15L 1 D1, D2 1.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER DIODES/1N5819HW-7-F 2 DC/DC1 DC/DC Converter TRACO POWER/THM 3-2415WI 1 TE CONNECTIVITY/RAYCHEM/ 1 3 W, 9-36 V Input, 24 V Output F1 PolySwitch 1.5 A SMD150F/33-2 L1 Surface Mount Power Inductor 47 µH 450 mA COILCRAFT/LPS4018-473MRB 1 L2 Surface Mount Power Inductor 18 µH 700 mA COILCRAFT/LPS4018-183MRB 1 OC1 Optocoupler, CMOS, 5 kVrms AVAGO/ACPL-W61L-000E 1 P1 Straight box header E-TEC/SLS-020-S920 1 E-TEC/BW 2-020-S850-55/P 1 DNP - 20 pins P2 Straight box female header 20 pins P3, P4 DNP Reference Design for M909-F18 SiC Modules Rev. 01 page 18 R1, R7 SMD Resistor, 0603, 475 Ω, 1% VISHAY DRALORIC/ CRCW0603475RFKEA 2 R2 SMD Resistor, 0603, 147 kΩ, 1% VISHAY DRALORIC/ CRCW0603147KFKEA 1 R3, R5 SMD Resistor, 0603, 6.49 kΩ, 1% PANASONIC/ERJ3EKF6491V 2 R4 SMD Resistor, 0603, 36 kΩ, 1% VISHAY DRALORIC/ CRCW0603147KFKEA 1 R6 SMD Resistor, 0603, 33 Ω, 5 % YAGEO/RC0603JR-0733RL 1 RN1, RN2 SMD Resistor Array, 1206, 10 Ω, 5 % YAGEO/YC164-JR-0710RL 2 RN3, RN4 SMD Resistor Array, 1206, 10 kΩ, 5 % BOURNS/CAY16-103J4LF 2 U1 Digital Isolator 6Ch SILICON LABS/Si8660BD-B-IS 1 U2, U3 Buck Regulator 2.1 MHz TEXAS INSTRUMENTS/ LMR16006YDDCT 2 Table 2: The Isolator’s Bill of material Reference Design for M909-F18 SiC Modules Rev. 01 page 19 Figure 8: M909 Isolator top side assembly drawing Reference Design for M909-F18 SiC Modules Rev. 01 page 20 Figure 9: M909 Isolator bottom side assembly drawing Figure 10: A map of the P1 connectors' pins of Gate Driver and Isoboard Reference Design for M909-F18 SiC Modules Rev. 01 page 21 Figure 11: Assembly of the Iso board and Gate driver Reference Design for M909-F18 SiC Modules Rev. 01 page 22 5 Harware Input Cap Bank ISO board and Gate driver Phase current sensor Line filter Figure 12: The complete M909 EVA board Reference Design for M909-F18 SiC Modules Rev. 01 page 23 Figure 13: Interleaved windings The filter inductor core type is Magnetics C055192A2. Two stacked cores was used. Wire used in the coil is HF litz wire(eg.:420*0.1mm). The number of turns from this type of wire is 38. Reference Design for M909-F18 SiC Modules Rev. 01 page 24