823 KB

The following document contains information on Cypress products.
MB9AB40N/A40N/340N/140N/150R/
MB9B520M/320M/120M Series
FM3 Family
32-BIT MICROCONTROLLER
FLASH PROGRAMMING MANUAL
For the information for microcontroller supports, see the following web site.
http://www.spansion.com/support/microcontrollers/
Publication Number MB9AB40N_MN706-00019
CONFIDENTIAL
Revision 3.0
Issue Date September 8, 2014
F L A S H
P R O G R A M M I N G
M A N U A L
MB9AB40N_MN706-00019-3v0-E, September 8, 2014
CONFIDENTIAL
F L A S H
P R O G R A M M I N G
M A N U A L
Preface
 Purpose of this manual and intended readers
This manual explains the functions, operations and serial programming of the flash memory of this series.
This manual is intended for engineers engaged in the actual development of products using this series.
 Trademark
ARM and Cortex are the registered trademarks of ARM Limited in the EU and other countries.
The company names and brand names herein are the trademarks or registered trademarks of their respective
owners.
 Organization of this Manual
This manual consists of the following 3 chapters.
CHAPTER 1 Flash Memory
This chapter gives an overview of, and explains the structure, operation, and registers of the Flash
memory.
CHAPTER 2 Flash Security
The flash security feature provides possibilities to protect the content of the flash memory.
This chapter section describes the overview and operations of the flash security.
CHAPTER 3 Serial Programming Connection
This chapter explains the basic configuration for serial programming to flash memory by using the
Spansion Serial Programmer.
 Sample programs and development environment
Spansion offers sample programs free of charge for operating the peripheral functions of the FM3 family.
Spansion also makes available descriptions of the development environment required for this series. Feel
free to use them to verify the operational specifications and usage of this Spansion microcontroller.
 Microcontroller support information:
http://www.spansion.com/Support/microcontrollers/
* : Note that the sample programs are subject to change without notice. Since they are offered as a way to
demonstrate standard operations and usage, evaluate them sufficiently before running them on your
system.
Spansion assumes no responsibility for any damage that may occur as a result of using a sample
program.
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How to Use This Manual
 Searching for a function
The following methods can be used to search for the explanation of a desired function in this manual:
 Search from the table of the contents
The table of the contents lists the manual contents in the order of description.
 Search from the register
The address where each register is located is not described in the text. To verify the address of a register,
see "APPENDIXES Register Map" of "FM3 Family Peripheral Manual".
 Terminology
This manual uses the following terminology.
Term
Explanation
Word
Indicates access in units of 32 bits.
Half word
Indicates access in units of 16 bits.
Byte
Indicates access in units of 8 bits.
 Notations
 The notations in bit configuration of the register explanation of this manual are written as follows.
 bit
: bit number
 Field : bit field name
 Attribute : Attributes for read and write of each bit
 R
: Read only
 W : Write only
 RW : Readable/Writable
 : Undefined
 Initial value : Initial value of the register after reset
 0 : Initial value is "0"
 1 : Initial value is "1"
 X : Initial value is undefined
 The multiple bits are written as follows in this manual.
Example : bit7:0 indicates the bits from bit7 to bit0
 The values such as for addresses are written as follows in this manual.
 Hexadecimal number : "0x" is attached in the beginning of a value as a prefix (example : 0xFFFF)
 Binary number
: "0b" is attached in the beginning of a value as a prefix (example: 0b1111)
 Decimal number
: Written using numbers only (example : 1000)
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Table 1 Applicable Products (TYPE6 product list)
Flash memory size
Type name*
256Kbyte
128Kbyte
64Kbyte
TYPE6
MB9AFB44L
MB9AFB42L
MB9AFB41L
MB9AFB44M
MB9AFB42M
MB9AFB41M
MB9AFB44N
MB9AFB42N
MB9AFB41N
MB9AFB44LA
MB9AFB42LA
MB9AFB41LA
MB9AFB44MA
MB9AFB42MA
MB9AFB41MA
MB9AFB44NA
MB9AFB42NA
MB9AFB41NA
MB9AFB44LB
MB9AFB42LB
MB9AFB41LB
MB9AFB44MB
MB9AFB42MB
MB9AFB41MB
MB9AFB44NB
MB9AFB42NB
MB9AFB41NB
MB9AFA44L
MB9AFA42L
MB9AFA41L
MB9AFA44M
MB9AFA42M
MB9AFA41M
MB9AFA44N
MB9AFA42N
MB9AFA41N
MB9AFA44LA
MB9AFA42LA
MB9AFA41LA
MB9AFA44MA
MB9AFA42MA
MB9AFA41MA
MB9AFA44NA
MB9AFA42NA
MB9AFA41NA
MB9AFA44LB
MB9AFA42LB
MB9AFA41LB
MB9AFA44MB
MB9AFA42MB
MB9AFA41MB
MB9AFA44NB
MB9AFA42NB
MB9AFA41NB
MB9AF344L
MB9AF342L
MB9AF341L
MB9AF344M
MB9AF342M
MB9AF341M
MB9AF344N
MB9AF342N
MB9AF341N
MB9AF344LA
MB9AF342LA
MB9AF341LA
MB9AF344MA
MB9AF342MA
MB9AF341MA
MB9AF344NA
MB9AF342NA
MB9AF341NA
MB9AF344LB
MB9AF342LB
MB9AF341LB
MB9AF344MB
MB9AF342MB
MB9AF341MB
MB9AF344NB
MB9AF342NB
MB9AF341NB
MB9AF144L
MB9AF142L
MB9AF141L
MB9AF144M
MB9AF142M
MB9AF141M
MB9AF144N
MB9AF142N
MB9AF141N
MB9AF144LA
MB9AF142LA
MB9AF141LA
MB9AF144MA
MB9AF142MA
MB9AF141MA
MB9AF144NA
MB9AF142NA
MB9AF141NA
MB9AF144LB
MB9AF142LB
MB9AF141LB
MB9AF144MB
MB9AF142MB
MB9AF141MB
MB9AF144NB
MB9AF142NB
MB9AF141NB
* : These type names are used to group applicable products in FM3 peripheral manual.
Table 2 Applicable Products (TYPE8 product list)
Flash memory size
Type name*
512Kbyte
384Kbyte
256Kbyte
TYPE8
MB9AF156M
MB9AF155M
MB9AF154M
MB9AF156N
MB9AF155N
MB9AF154N
MB9AF156R
MB9AF155R
MB9AF154R
MB9AF156MA
MB9AF155MA
MB9AF154MA
MB9AF156NA
MB9AF155NA
MB9AF154NA
MB9AF156RA
MB9AF155RA
MB9AF154RA
* : These type names are used to group applicable products in FM3 peripheral manual.
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Table 3 Applicable Products (TYPE9 product list)
Flash memory size
Type name*
256Kbyte
128Kbyte
M A N U A L
64Kbyte
TYPE9
MB9BF524K
MB9BF522K
MB9BF521K
MB9BF524L
MB9BF522L
MB9BF521L
MB9BF524M
MB9BF522M
MB9BF521M
MB9BF324K
MB9BF322K
MB9BF321K
MB9BF324L
MB9BF322L
MB9BF321L
MB9BF324M
MB9BF322M
MB9BF321M
MB9BF124K
MB9BF122K
MB9BF121K
MB9BF124L
MB9BF122L
MB9BF121L
MB9BF124M
MB9BF122M
MB9BF121M
* : These type names are used to group applicable products in FM3 peripheral manual.
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CONTENTS
CHAPTER 1: Flash Memory .............................................................................................. 1
1. Overview ........................................................................................................................... 2
2. Configuration ..................................................................................................................... 3
3. Operation Explanation ..................................................................................................... 11
3.1. Dual Operation Flash Memory Function ....................................................................... 12
3.2. Automatic Algorithm ..................................................................................................... 13
3.2.1. Command Sequences ................................................................................................14
3.2.2. Command Operations ................................................................................................15
3.2.3. Automatic Algorithm Run States .................................................................................17
3.3. Explanation of Flash Memory Operation ..................................................................... 20
3.3.1. Read/Reset Operation ................................................................................................21
3.3.2. Write Operation ..........................................................................................................22
3.3.3. Flash Erase Operation ...............................................................................................23
3.3.4. Sector Erase Operation ..............................................................................................24
3.3.5. Sector Erase Suspended Operation ...........................................................................26
3.3.6. Sector Erase Restart Operation .................................................................................27
3.4. Cautions When Using Flash Memory .......................................................................... 28
4. Registers ......................................................................................................................... 29
4.1. Flash Read Wait Register (FRWTR) ........................................................................... 30
4.2. Flash Status Register (FSTR) ..................................................................................... 32
4.3. Flash Interrupt Control (FICR) ..................................................................................... 34
4.4. Flash Interrupt Status Register (FISR) ........................................................................ 35
4.5. Flash Interrupt Clear Register (FICLR) ....................................................................... 36
4.6. CR Trimming Data Mirror Register (CRTRMM) .......................................................... 37
CHAPTER 2: Flash Security ............................................................................................ 39
1. Overview ......................................................................................................................... 40
2. Operation Explanation ..................................................................................................... 41
CHAPTER 3: Serial Programming Connection ................................................................ 43
1. Serial Programmer .......................................................................................................... 44
1.1. Basic Configuration ..................................................................................................... 45
1.2. Pins Used ...................................................................................................................... 53
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MB9AB40N-MN706-00019-3v0-E, September 8, 2014
CHAPTER 1 Flash Memory
1. Overview
CHAPTER 1: Flash Memory
This series is equipped with Dual Operation Flash memory consisting of 64 KBytes to 512
KBytes of Main area and 32 KBytes of Work area.
The Dual Operation Flash memory has the upper bank and the lower bank. So, this series
could implement erase, write and read operations for each bank simultaneously. Those
operations are not available for the existing series.
This chapter gives an overview of, and explains the structure, operation, and registers of the
Dual Operation Flash memory.
1.
Overview
2.
Configuration
3.
Operating Description
4.
Registers
CODE:9AB40N_FLASH-E03.0
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CHAPTER 1 Flash Memory
1. Overview
1. Overview
The built-in Dual Operation Flash memory could erase data by-sector, or by all-sector
collectively (Flash erase), and write programmed data by byte or by half words (16 bits) with
the Cortex-M3 CPU.
The Dual Operation Flash memory has the upper bank and the lower bank. So, this series
could implement erase, write and read operations for each bank simultaneously. Those
operations are not available for the existing series.
 Dual Operation Flash Memory Features
 Two bank structure write/erase operation and read operation could be implemented simultaneously
 Usable capacity:
Minimum configuration: 64 Kbytes (Lower bank of 16 Kbytes and upper bank of 48 Kbytes)
Maximum configuration: 512 Kbytes (Lower bank of 16 Kbytes and upper bank of 496 Kbytes)
 Work area
32 KBytes
 Detection of write/erase completion with CPU interrupt
 High-speed flash memory:
Up to 40 MHz: 0Wait
Up to 72 MHz: 0 Wait by enabling pre-fetch buffer (only for TYPE9 products)
 Operating mode:
1. CPU mode
This mode allows reading, writing, and erasing of flash memory from CPU (automatic algorithm*1).
The operation of writing data by byte (8 bits) or by half word (16 bits) is available.
To rewrite data, execute a program on RAM or on Flash Memory under Dual Operation. The
simultaneous operation of erasing/writing and reading operations in respective banks (upper bank
and lower bank) is possible.
2. ROM writer mode
This mode allows reading, writing, and erasing of flash memory from a ROM writer (automatic
algorithm*1).
 Built-in flash security function
(Prevents reading of the content of flash memory by a third party)
See "CHAPTER Flash Security" for details on the flash security function.
<Note>
This document explains the usage of flash memory in CPU mode.
For details on accessing the flash memory from a ROM writer, see the instruction manual of the ROM
writer that is being used.
*1: Automatic algorithm=Embedded Algorithm
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CHAPTER 1 Flash Memory
2. Configuration
2. Configuration
This series of flash memory consists of 64 KBytes to 512 KBytes Main area, 32 KBytes Work
area, a security code area, and a CR trimming data area.
Table 2-1 shows the correspondence between Capacity of Flash Memory built into this series and Product
TYPE.
Figure 2-1 to Figure 2-7 show the address and sector structure of the MainFlash memory built into this
series as well as the address of security code / CR trimming area.
See "CHAPTER 2 Flash Security" for details on the security.
See Section "4.6 CR Trimming Data Mirror Register (CRTRMM)" and "CHAPTER High-Speed CR
Trimming" in the "FM3 Family Peripheral Manual" for details on the High-Speed CR trimming data.
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CHAPTER 1 Flash Memory
2. Configuration
Table 2-1 Main area Capacity by Product TYPE
Main area Capacity
Product
TYPE
512Kbyte
384Kbyte
256Kbyte
128Kbyte
TYPE6
TYPE8
-
-
-
-
-
-
-
-
MB9AF156M
MB9AF156N
MB9AF156R
MB9AF156MA
MB9AF156NA
MB9AF156RA
MB9AF155M
MB9AF155N
MB9AF155R
MB9AF155MA
MB9AF155NA
MB9AF155RA
-
-
-
-
-
-
TYPE9
MB9AFB44L
MB9AFB44M
MB9AFB44N
MB9AFB44LA
MB9AFB44MA
MB9AFB44NA
MB9AFB44LB
MB9AFB44MB
MB9AFB44NB
MB9AFA44L
MB9AFA44M
MB9AFA44N
MB9AFA44LA
MB9AFA44MA
MB9AFA44NA
MB9AFA44LB
MB9AFA44MB
MB9AFA44NB
MB9AF344L
MB9AF344M
MB9AF344N
MB9AF344LA
MB9AF344MA
MB9AF344NA
MB9AF344LB
MB9AF344MB
MB9AF344NB
MB9AF144L
MB9AF144M
MB9AF144N
MB9AF144LA
MB9AF144MA
MB9AF144NA
MB9AF144LB
MB9AF144MB
MB9AF144NB
MB9AF154M
MB9AF154N
MB9AF154R
MB9AF154MA
MB9AF154NA
MB9AF154RA
MB9BF524K
MB9BF524L
MB9BF524M
MB9BF324K
MB9BF324L
MB9BF324M
MB9BF124K
MB9BF124L
MB9BF124M
64Kbyte
MB9AFB42L
MB9AFB42M
MB9AFB42N
MB9AFB42LA
MB9AFB42MA
MB9AFB42NA
MB9AFB42LB
MB9AFB42MB
MB9AFB42NB
MB9AFA42L
MB9AFA42M
MB9AFA42N
MB9AFA42LA
MB9AFA42MA
MB9AFA42NA
MB9AFA42LB
MB9AFA42MB
MB9AFA42NB
MB9AF342L
MB9AF342M
MB9AF342N
MB9AF342LA
MB9AF342MA
MB9AF342NA
MB9AF342LB
MB9AF342MB
MB9AF342NB
MB9AF142L
MB9AF142M
MB9AF142N
MB9AF142LA
MB9AF142MA
MB9AF142NA
MB9AF142LB
MB9AF142MB
MB9AF142NB
MB9AFB41L
MB9AFB41M
MB9AFB41N
MB9AFB41LA
MB9AFB41MA
MB9AFB41NA
MB9AFB41LB
MB9AFB41MB
MB9AFB41NB
MB9AFA41L
MB9AFA41M
MB9AFA41N
MB9AFA41LA
MB9AFA41MA
MB9AFA41NA
MB9AFA41LB
MB9AFA41MB
MB9AFA41NB
MB9AF341L
MB9AF341M
MB9AF341N
MB9AF341LA
MB9AF341MA
MB9AF341NA
MB9AF341LB
MB9AF341MB
MB9AF341NB
MB9AF141L
MB9AF141M
MB9AF141N
MB9AF141LA
MB9AF141MA
MB9AF141NA
MB9AF141LB
MB9AF141MB
MB9AF141NB
-
-
MB9BF522K
MB9BF522L
MB9BF522M
MB9BF322K
MB9BF322L
MB9BF322M
MB9BF122K
MB9BF122L
MB9BF122M
MB9BF521K
MB9BF521L
MB9BF521M
MB9BF321K
MB9BF321L
MB9BF321M
MB9BF121K
MB9BF121L
MB9BF121M
Figure 2-1 Memory map of 64 KByte Main area and 32 KByte Work area
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CHAPTER 1 Flash Memory
2. Configuration
0x0020_8000
0x0020_8000
SA7(8KB)
0x0020_6000
Flash memory
32KB
SA6(8KB)
0x0020_4000
0x0020_0000
SA4(8KB)
0x0020_0000
bit31
+3
0x0010_4000
0x0010_2000
0x0010_0000
Lower Bank
SA5(8KB)
0x0020_2000
bit0
+2
+1
+0
CR Trimming data
Lower Bank
Security code
0x0001_0000
0x0001_0000
SA8(48KB)
0x0000_4000
Flash memory
64KB
SA3(8KB)
0x0000_2000
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Lower Bank
SA2(8KB)
0x0000_0000
bit31
0x0000_0000
Upper Bank
+3
bit0
+2
+1
+0
5
CHAPTER 1 Flash Memory
2. Configuration
Figure 2-2 Memory map of 128 KByte Main area and 32 KByte Work area
0x0020_8000
0x0020_8000
SA7(8KB)
0x0020_6000
Flash memory
32KB
SA6(8KB)
0x0020_4000
0x0020_0000
SA4(8KB)
0x0020_0000
bit31
+3
0x0010_4000
0x0010_2000
0x0010_0000
Lower Bank
SA5(8KB)
0x0020_2000
bit0
+2
+1
+0
CR Trimming data
Lower Bank
Security code
0x0002_0000
0x0002_0000
SA9(64KB)
Upper Bank
0x0001_0000
SA8(48KB)
Flash memory
128KB
0x0000_4000
SA3(8KB)
0x0000_2000
bit31
0x0000_0000
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Lower Bank
SA2(8KB)
0x0000_0000
+3
bit0
+2
+1
+0
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CHAPTER 1 Flash Memory
2. Configuration
Figure 2-3 Memory map of 256 KByte Main area and 32 KByte Work area
0x0020_8000
0x0020_8000
SA7(8KB)
0x0020_6000
Flash memory
32KB
SA6(8KB)
0x0020_4000
0x0020_0000
SA4(8KB)
0x0020_0000
bit31
+3
0x0010_4000
0x0010_2000
0x0010_0000
Lower Bank
SA5(8KB)
0x0020_2000
bit0
+2
+1
+0
CR Trimming data
Lower Bank
Security code
0x0004_0000
0x0004_0000
SA11(64KB)
0x0003_0000
SA10(64KB)
Upper Bank
0x0002_0000
SA9(64KB)
Flash memory
256KB
0x0001_0000
SA8(48KB)
0x0000_4000
SA3(8KB)
0x0000_2000
bit31
0x0000_0000
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Lower Bank
SA2(8KB)
0x0000_0000
+3
bit0
+2
+1
+0
7
CHAPTER 1 Flash Memory
2. Configuration
Figure 2-4 Memory map of 384 KByte Main area and 32 KByte Work area
0x0020_8000
0x0020_8000
SA7(8KB)
0x0020_6000
Flash memory
32KB
SA6(8KB)
0x0020_4000
0x0020_0000
SA4(8KB)
0x0020_0000
bit31
+3
0x0010_4000
0x0010_2000
0x0010_0000
Lower Bank
SA5(8KB)
0x0020_2000
bit0
+2
+1
+0
CR Trimming data
Lower Bank
Security code
0x0006_0000
0x0006_0000
SA13(64KB)
0x0005_0000
SA12(64KB)
0x0004_0000
SA11(64KB)
Upper Bank
0x0003_0000
SA10(64KB)
Flash memory
384KB
0x0002_0000
SA9(64KB)
0x0001_0000
SA8(48KB)
0x0000_4000
SA3(8KB)
0x0000_2000
bit31
0x0000_0000
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Lower Bank
SA2(8KB)
0x0000_0000
+3
bit0
+2
+1
+0
8
CHAPTER 1 Flash Memory
2. Configuration
Figure 2-5 Memory map of 512 KByte Main area and 32 KByte Work area
0x0020_8000
0x0020_8000
SA7(8KB)
0x0020_6000
Flash memory
32KB
SA6(8KB)
0x0020_4000
0x0020_0000
SA4(8KB)
0x0020_0000
bit31
+3
0x0010_4000
0x0010_2000
0x0010_0000
Lower Bank
SA5(8KB)
0x0020_2000
bit0
+2
+1
+0
CR Trimming data
Lower Bank
Security code
0x0008_0000
0x0008_0000
SA15(64KB)
0x0007_0000
SA14(64KB)
0x0006_0000
SA13(64KB)
0x0005_0000
SA12(64KB)
Upper Bank
0x0004_0000
SA11(64KB)
Flash memory
512KB
0x0003_0000
SA10(64KB)
0x0002_0000
SA9(64KB)
0x0001_0000
SA8(48KB)
0x0000_4000
SA3(8KB)
0x0000_2000
bit31
0x0000_0000
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Lower Bank
SA2(8KB)
0x0000_0000
+3
bit0
+2
+1
+0
9
CHAPTER 1 Flash Memory
2. Configuration
Figure 2-6 Address of security/CR trimming data
Security / CR Trimming data
0x0010_4000
0x0010_2004
CR trimming area
0x0010_2000
0x0010_0004
Security code area
0x0010_0000
bit31
bit0
+3
+2
+1
+0
Figure 2-7 Bit structure of CR trimming area
bit
Field
31
21 20
Reserved
16 15
CR temperature trimming data*
10 9
Reserved
0
CR Frequency trimming data
*:Only TYPE8 / TYPE9 product.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3. Operation Explanation
This section explains the Dual Operation Flash memory operation.
3.1
Dual Operation Flash Memory Function
3.2
Automatic Algorithm
3.3
Explanation of Flash Memory Operation
3.4
Cautions When Using Flash Memory
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.1. Dual Operation Flash Memory Function
This section explains the Dual Operation Flash memory functions.
 Dual Operation Flash Memory Functions
The Dual Operation Flash memory has two banks (upper bank/lower bank). The banks operate in the
following conditions.
Upper Bank
Lower Bank
Reading
Reading
Writing/Sector Erasing
Writing/Sector Erasing
Reading
Flash Erasing (Collective Erasing)
 Dual Operation Flash Memory Interrupt
The Dual Operation Flash memory can control the writing operation with interrupt by executing a program
on flash memory.
The interrupt could be generated at the writing/erasing operation completion or at the "HANG" status
detection. The interrupt vector, however, cannot be read during writing/erasing operation to a bank with an
interrupt vector. So, the vector address should be written to that of a different bank or RAM by using
"Vector Table Offset Register" of Cortex-M3.
<Notes>
 The flash memory cannot implement writing and reading operation to the same bank simultaneously.
 To write/erase data in the flash memory, copy the writing/erasing program in on-chip SRAM or a
different bank and execute the program.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.2. Automatic Algorithm
Writing to and erasing Dual Operation Flash memory is performed by activating the automatic
algorithm.
This section explains the automatic algorithm.
3.2.1
Command Sequences
3.2.2
Command Operations
3.2.3
Automatic Algorithm Run States
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.2.1.
Command Sequences
The automatic algorithm is activated by writing data to the Dual Operation Flash memory in
the specified method. This is called a command. Table 3-1 shows the command sequences.
Table 3-1 Command sequence chart
Command
1st write
2nd write
3rd write
4th write
5th write
6th write
Number
of writes Address Data Address Data Address Data Address Data Address Data Address Data
Read/
Reset
1
Write
4
Flash erase
6
Sector
erase (No
Sector
added)
Sector
erase
(Sector
added)
Sector
erase
suspended
Sector
erase
restarting
X
PA
SA
PD
*:
6
0xXXX 0xF0
--
0xAA8 0xAA 0x554
--
--
--
--
--
--
--
--
--
0xA0
PA
PD
--
--
--
--
0xAA8
0x10
0x30
0x55 0xAA8
0x80 0xAA8 0xAA 0x554
0x55
SA
6 and
on
0xE0
*
1
0xXXX 0xB0
--
--
--
--
--
--
--
--
--
--
1
0xXXX 0x30
--
--
--
--
--
--
--
--
--
--
: Any value
: Write address
: Sector address (Specify any address within the address range of the sector to be erased)
: Write data
To add sectors to be erased, repeat the 6th write operation for the required times. By writing 0x30 in
the last sector address, the erase operation is started.
<Notes>
 The data notation in Table 3-1 only shows the lower 8 bits. The upper 8 bits can be set to any value.
 Write commands in a byte (8 bits) or half-words
 The address notation in Table 3-1 only shows the lower 12 bits. The upper 20 bits should be set to any
address within the address range of the target flash memory. When the address outside the flash address
range is specified, the command sequence would not be executed correctly since the flash memory
cannot recognize the command.
 Specify 0x0010_0000 to the address to set a flash security code.
 Specify 0x0010_2000(CR Frequency trimming data) or 0x0010_2002(CR temperature trimming data) to
the address to set or erase CR trimming data.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.2.2.
Command Operations
This section explains the command operations.
 Read/Reset Command
The flash memory can be read and reset by sending the read/reset command.
When a read/reset command is issued, the flash memory maintains the read state until another command is
issued.
When the execution of the automatic algorithm exceeds the time limit (HANG), the flash memory is
returned to the read/reset state by issuing the read/reset command.
The read/reset command issued during each command operation is valid. In this case, commands previously
issued are cleared. So, the commands issued should be issued again from the first command.
See Section "3.3.1 Read/Reset Operation" for details on the actual operation.
 Program (Write) Command
The data is written in the address specified at the fourth time by issuing the write command to the target
sector for four consecutive times. Data can be written in a byte (8 bits) or a half-word (16 bits).according to
the data width specified at the fourth time. For the first to third commands, the data width is not judged.
Once the forth command issuance has finished, the automatic algorithm is activated and the automatic write
to the flash memory starts. After executing the automatic write algorithm command sequence, there is no
need to control the flash memory externally.
See Section "3.3.2 Write Operation" for details on the actual operation.
<Note>
Only a single byte or half-word of data can be written for each write command sequence.
To write multiple pieces of data, issue one write command sequence for each piece of data.
 Flash Erase (All Sector Batch Erase) Command
All of the sectors in flash memory can be batch-erased by sending the flash erase command in six
consecutive writes. Once the sixth sequential write has finished, the automatic algorithm is activated and the
flash erase operation starts.
<Note>
By flash erase command, the security/CR trimming data value can also be erased.
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CHAPTER 1 Flash Memory
3. Operation Explanation
 Sector Erase Command
By sending the sector erase command in six consecutive writes, the single sector specified by sixth write
can be erased. When the sixth write data is "0x30", the automatic algorithm is activated and the sector erase
operation begins.
To erase multiple sectors, issue the sector erase code (0xE0) which is the sixth write data. To erase more
sectors, write the sector erase code, "0xE0" to sector codes added in the seventh time and later. By writing
the sector erase code, "0x30" in the last write data, the automatic algorithm is activated and the sector erase
operation begins.
There is no restriction on number of sectors added to be erased and all sectors can be erased collectively.
<Note>
The sector erase is started only by writing 0x30 to the sector erase command. 0xE0 cannot start the erase
operation.
 Sector Erase Suspended Command
By issuing the sector erase suspended command during sector erase, sector erase can be suspended. In the
sector erase suspended state, the read and write operations of memory cells of the sector not to erase is
possible. (It is also possible even in the same sector.)
See Section "3.3.5 Sector Erase Suspended Operation" for details on the actual operation.
<Notes>
 This command is only valid during sector erase. It is ignored even if it is issued during flash erase or
during write.
 During the sector erase suspended state, the flash erase and the erase of sectors other than erase target
sectors is not executed.
 Sector Erase Restart Command
In order to restart the erase operation in the sector erase suspended state, issue the sector erase restart
command. Issuing the sector erase restart command returns the flash memory to the sector erase state and
restarts the erase operation.
See Section "3.3.6 Sector Erase Restart Operation" for details on the actual operation.
<Note>
This command is only valid during sector erase suspended. It is ignored even if it is issued during sector
erase.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.2.3.
Automatic Algorithm Run States
Writing and erasing of Dual Operation flash memory is performed by the automatic algorithm.
Whether or not the automatic algorithm is currently executing can be checked by using the
Flash Status Register (FSTR).
 Flash Status Register
This indicates the status of the automatic algorithm. Figure 3-1 shows the bit structure of the Flash Status
Register.
Figure 3-1 Bit structure of the Flash Status Register
bit
7
Reserved
6
Reserved
5
PGMS
4
SERS
3
ESPS
2
CERS
1
HNG
0
RDY
<Note>
Because the correct value might not be read out immediately after issuing a command, ignore the first value
of the Flash Status Flag that is read immediately after issuing a command.
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CHAPTER 1 Flash Memory
3. Operation Explanation
 Status of each bit and Main Flash memory
For the correspondence between each bit of the Flash Status register and the status of the flash memory, see
Table 3-2.
Table 3-2 List of Flash Status Flag Register
State
Running
Time limit
exceeded
(Note)
Automatic write operation
Internal operation before
Flash memory
erasing
erase
Erasing
Sector erase
Program write operation
Sector erase
(Sector not to erase)
suspended
Other than above
Program write operation
Internal operation before
Flash memory
erasing
erase
Erasing
Sector erase
Sector erase
Program write operation
suspended
(Sector not to erase)
PGMS SERS ESPS CERS HNG RDY
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
0
0
1
1
1
0
0
0
0
1
1
0
1
0
0
0
0
1
1
0
0
0
0
0
1
0
0
0
0
1
0
0
1
0
1
1
0
0
1
1
1
0
1
0
See " Bit Descriptions" for the values that can be read.
 Bit Descriptions
[bit7:6] Reserved bits
[bit5] PGMS: Program Write Operation Status flag bit
After issuing the program write operation command, RDY bit becomes "0" and this bit is set to "1".
This bit of "1" means the Program write operation status.
After the Automatic Write Operation is finished, this bit is cleared to "0" and RDY bit becomes "1".
[bit4] SERS: Sector Erase Status flag bit
After issuing the Sector Erase command, RDY bit becomes "0" and this bit is set to "1".
This bit of "1" means the Sector Erase status.
After the Sector Erase Operation is finished, this bit is cleared to "0" and RDY bit becomes "1".
When the Sector Suspend command is issued during sector erasing, the erasing operation is suspended.
During this suspended status, this bit continues to be "1".
[bit3] ESPS: Sector Erase Suspend Status flag bit
When the Sector Erase Suspend command is issued during sector erasing, the erasing operation is
suspended, RDY bit becomes "1", and this bit is set to "1". This bit of "1" means the Sector Erase Suspend
Status.
By issuing the Sector Erase Restart command, this bit is cleared to "0" and the Sector Erase Operation is
restarted.
In the Sector Erase Suspend Status, the automatic write operation command can be issued to the sectors not
to erase. By issuing the command, the RDY bit is set to "0" and PGMS bit is set to "1" to transfer to
"Program write operation status".
[bit2] CERS: Flash Memory Erase Status flag bit
When the Flash Erase command is issued, RDY bit becomes "0" and the Flash Memory is transferred to
Pre-erasing Internal Operation Status. In this status, this bit is not set to "1" yet. After the Pre-erasing
Internal Operation is completed, the Flash erasing is started and this bit is set to "1".
This bit of "1" means Flash Erasing Status.
After the Flash Erasing operation is completed, this bit is cleared to "0" and RDY bit becomes "1".
[bit1] HNG: HANG Status flag bit
The Internal Timer is mounted on the Flash Memory to provide the execution limit time of the Automatic
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CHAPTER 1 Flash Memory
3. Operation Explanation
Algorithm. When the Automatic Algorithm is not completed within the executing limit time specified by the
internal timer, the Flash Memory becomes HANG Status and this bit is set to "1".
To clear this bit and to return to the normal status, it is required to generate the reset or to issue the reset
command.
[bit0] RDY: RDY Status flag bit
This bit indicates whether the Automatic Algorithm is being executed or not. When the Flash Memory is
being written or erased, this bit is set to "0" and the execution command cannot be accepted in this status.
When this bit is "1", the execution command can be accepted (except the Sector Suspend command during
sector erasing.)
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.3. Explanation of Flash Memory Operation
The operation of the Flash memory is explained for each command.
3.3.1
Read/Reset Operation
3.3.2 Write Operation
3.3.3
Flash Erase Operation
3.3.4
Sector Erase Operation
3.3.5
Sector Erase Suspended Operation
3.3.6
Sector Erase Restart Operation
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.3.1.
Read/Reset Operation
This section explains the read/reset operation.
To place the flash memory in the read/reset state, send read/reset commands to an arbitrary address within
the address range of the flash memory.
Because the read/reset state is the default state of the flash memory, the flash memory always returns to this
state when the power is turned on or when a command finishes successfully. When the power is turned on,
there is no need to issue a data read command. Furthermore, because data can be read by normal read access
and programs can be accessed by the CPU while in the read/reset state, there is no need to issue read/reset
commands.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.3.2.
Write Operation
This section explains the write operation.
Writes are performed according to the following procedure.
1. The program (write) command is issued sequentially.
The automatic algorithm activates and the data is written to the flash memory.
After the write command is issued, there is no need to control the flash memory externally.
2. Confirm Flash Status Register (FSTR)
After issuing the program write command, RDY bit and PGMS bit of the Flash Status Register are set to
"0" and "1" respectively. After the write operation is completed, RDY bit and PGMS bit are set to "1"
and "0" respectively.
See Figure 3-2 for an example of a write operation to the flash memory.
Figure 3-2 Example write operation
Start of writing
Write command sequence
1. Addr:00XX_XAA8
2. Addr:00XX_X554
3. Addr:000X_XAA8
4. Write Address
Data:XXAA
Data:XX55
Data:XXA0
Write Data
Read FSTR (Dummy)
Read FSTR
Next address
1
HNG?
0
No
Write error
PGMS=0 & RDY=1?
Yes
No
Last address
Yes
End of writing
<Notes>
 See Section "3.2 Automatic Algorithm" for details on the write command.
 Because the value of the flash memory is read correctly immediately after the command issued, ignore
the first read value of Flash Status Register (FSTR) after the command issued.
 Although the flash memory can be written in any sequence of addresses regardless of crossing sector
boundaries, only a single byte or a single half-word of data can be written with each write command
sequence. To write multiple pieces of data, issue one write command sequence for each piece of data.
 All commands issued to the flash memory during the write operation are ignored.
 If the device is reset while the write is in progress, the data that is written is not guaranteed.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.3.3.
Flash Erase Operation
This section explains the flash erase operation.
All sectors in flash memory can be erased in one batch. Erasing all of the sectors in one batch is called flash
erase.
The automatic algorithm can be activated and all of the sectors can be erased in one batch by sending the
flash erase command sequentially to the target sector.
See Section "3.2 Automatic Algorithm" for details on the flash erase command.
1. Issue the flash erase command sequentially
The automatic algorithm is activated and the flash erase operation of the flash memory begins.
2. Confirm Flash Status Register (FSTR)
After Flash Erase Command issued, RDY bit of Flash Status Register becomes "0". At this time, the
flash memory, becomes pre-erasing internal operation status and CERS bit is held to be "0". After
erasing operation is started, RDY bit and CERS bit are cleared to "1" and "0" respectively.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.3.4.
Sector Erase Operation
This section explains the sector erase operation.
Sectors in the flash memory can be selected and the data of only the selected sectors can be erased. Multiple
sectors can be specified at the same time.
Sectors are erased according to the following sequence.
1. Issue the sector erase command sequentially to the target sector
The automatic algorithm activates and the sector erase operation begins.
To erase multiple sectors, write 0xE0 as the 6th write data (command data). By writing 0xE0 to the 7th
sector address and later, sectors could be added to be erased. Write 0x30 in the last sector address, then
the automatic algorithm is activated and the erase operation of multi sectors specified is started.
There is no restriction on number of sectors added to be erased and all sectors can be erased collectively.
2. Confirm Flash Status Register (FSTR)
After issuing Sector erase command, RDY bit and SERS bit of the Flash Status Register are set to "0"
and "1" respectively. After that, when the erase operation of all sectors specified are completed, RDY bit
and SERS bit are set to "1" and "0" respectively.
For an example of the sector erase procedure, see Figure 3-3.
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CHAPTER 1 Flash Memory
3. Operation Explanation
Figure 3-3 Example of sector erase procedure
Start of erase
Sector erase command sequence
1. Addr:00XX_XAA8
2. Addr:00XX_X554
3. Addr:00XX_XAA8
4. Addr:00XX_XAA8
5. Addr:00XX_X554
Data:XXAA
Data:XX55
Data:XX80
Data:XXAA
Data:XX55
No
There is another
sector to be erased?
Yes
Write erase code (0xXXE0) to
sector to be erased
消去コード ()
Write erase code (0xXX30) to
sector to be erased
Read FSTR (dummy)
Read FSTR
1
HNG?
0
No
SERS=0 & RDY=1 ?
Failure of erase
Yes
End of erase
Once the sector erase operation has finished, the flash memory returns to read/reset mode.
<Notes>
 See Section "3.2 Automatic Algorithm" for details on the sector erase command.
 Because the value may not be read correctly immediately after issuing a command, ignore the first read
value of the Flash Status Register (FSTR) after issuing the command.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.3.5.
Sector Erase Suspended Operation
This section explains the sector erase suspended operation.
When the sector erase suspended command is sent during sector erase or in the command timeout state, the
flash memory makes a transition to the sector erase suspended state and temporarily suspends the erase
operation.
By sending the erase restart command, the flash memory is returned to the sector erase state and can restart
the suspended erase operation.
 Sector Erase Suspended Operation
Sector erase is suspended in the following steps:
1. Write the sector erase suspended command to an arbitrary address within the address range of the flash
memory during the erasing operation.
2. Confirm Flash Status Register (FSTR).
Issuing the sector erase suspended command, RDY bit and ESPS bit are set to "0" and "1" respectively.
Under this condition, memory cells of a sector other than a sector to be erased are could be read and
written.(even in the same bank, they could be erased)
<Notes>
 See Section "3.2 Automatic Algorithm" for details on the sector erase suspended command.
 When a sector to be erased is read after a sector erase suspend, the value of the sector is undefined.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.3.6.
Sector Erase Restart Operation
This section explains the operation for restarting sector erase during sector erase suspended.
When the sector erase restart command is issued to an arbitrary address in the address range of the flash
memory while sector erase is suspended, sector erase can be restarted.
When the sector erase restart command is issued, the sector erase operation during sector erase suspended is
restarted.
See Section "3.2 Automatic Algorithm" for details on the sector erase restart command.
<Note>
The sector erase restart command is only valid during sector erase suspended. Even if the sector erase
restart command is issued during sector erase, it is ignored.
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CHAPTER 1 Flash Memory
3. Operation Explanation
3.4. Cautions When Using Flash Memory
This section explains the cautions when using Flash memory.
 If this device is reset during the write, the data that is written cannot be guaranteed.
Moreover, It is necessary to prevent an unexpected reset like Watchdog Timer from occurring during the
writing and deleting.
 Immediately after issuing the automatic algorithm command to the flash memory, always perform a
dummy read before reading the data that is actually wanted.
 If the device is forced to transfer to the low power consumption mode, ensure the operations of the flash
memory automatic algorithm is completed.
See "CHAPTER Low Power Consumption Mode" of the "FM3 Family Peripheral Manual" for details on
the low power consumption mode.
 During the automatic algorithm operation, an address in the bank where the automatic algorithm is being
executed cannot read correctly. So, it is required to prevent an interrupt occurring in a bank where an
interrupt vector exists during writing /erasing, or to rewrite a vector address to that of a different bank or
RAM by using "Vector Table Offset Register" of Cortex-M3.
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CHAPTER 1 Flash Memory
4. Registers
4. Registers
This section explains the registers.
 List of Registers
Abbreviated Register Name
Register Name
Reference
FRWTR
Flash Read Wait Register
4.1
FSTR
Flash Status Register
4.2
FICR
Flash Interrupt Control Register
4.3
FISR
Flash Interrupt Status Register
4.4
FICLR
Flash Interrupt Clear Register
4.5
CRTRMM
CR Trimming Mirror Register
4.6
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CHAPTER 1 Flash Memory
4. Registers
4.1. Flash Read Wait Register (FRWTR)
FRWTR register specifies the wait cycle for flash memory.
 TYPE6 and TYPE8 products
bit
7
6
Field
5
4
3
2
1
Reserved
0
RWT
Attribute
Initial value
RW
0
RW
1
[bit7:2] Reserved: Reserved bits
The read values are undefined. Ignored on write.
[bit1:0] RWT: Read Wait Cycle
Specifies the read wait cycle for the Flash Memory.
bit1
bit0
Description
0
0
0 cycle wait mode
This setting can be used when HCLK is 20 MHz or less.
0
1
0/1 cycle wait mode(Initial value)
This setting should be specified when HCLK is 20 MHz or more.
1
0
1
1
Setting prohibited
<Notes>
 Do not set RWT to "00" if HCLK exceeds 20 MHz.
While RWT setting is "00", be sure that HCLK must not exceed 20 MHz for a moment.
 Perform a dummy read to this register after changing the register.
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CHAPTER 1 Flash Memory
4. Registers
 TYPE9 products
bit
7
6
Field
5
4
3
2
1
Reserved
0
RWT
Attribute
Initial value
RW
1
RW
0
[bit7:2] Reserved: Reserved bits
The read values are undefined. Ignored on write.
[bit1:0] RWT: Read Wait Cycle
Specifies the read wait cycle for the Flash Memory.
bit1
bit0
Description
0
0
0 cycle wait mode
This setting can be used when HCLK is 20 MHz or less.
0
1
0/1 cycle wait mode
This setting could be specified when HCLK is more than 20 MHz and 40 MHz or
less.
1
0
Pre-fetch mode (Initial value)
This setting should be specified when HCLK is 40 MHz or more.
1
1
Setting prohibited
<Notes>
 Do not set RWT to "00" if HCLK exceeds 20 MHz. While RWT setting is "00", be sure that HCLK must
not exceed 20MHz for a moment.
 Do not set RWT to "00" and "01" if HCLK exceeds 40 MHz. While RWT setting is "00" or "01", be sure
that HCLK must not exceed 40 MHz for a moment.
 Perform a dummy read to this register after changing the register.
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CHAPTER 1 Flash Memory
4. Registers
4.2. Flash Status Register (FSTR)
FSTR register is a status register of flash memory.
bit
7
Field
6
Reserved
5
4
3
2
1
0
PGMS
SERS
ESPS
CERS
HNG
RDY
R
0
R
0
R
0
R
0
R
0
R
X
Attribute
Initial value
[bit7:6] Reserved bits
The read values are undefined. Ignored on write.
[bit5] PGM: Flash Program Status
Indicates the program (writing operation) status of the flash memory.
bit
Description
0
The program is not being written to the flash memory.
1
The program is being written to the flash memory.
[bit4] SERS: Flash Sector Erase Status
Indicates the sector erase status of the flash memory.
bit
Description
0
The sector is not being erased.
1
The sector is being erased or the sector erase is being suspended.
[bit3] ESPS: Flash Erase Suspend Status
Indicates the sector erase suspend status of the flash memory.
bit
Description
0
The sector erase is not being suspended.
1
The sector erase is being suspended.
[bit2] CERS: Flash Chip Erase Status
Indicates the all sector erase status of the flash memory.
bit
Description
0
The flash memory is not being data erased.
1
The flash memory is being data erased.
[bit1] HNG: Flash Hang
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CHAPTER 1 Flash Memory
4. Registers
Indicates whether the flash memory is in the HANG state. Flash memory enters the HANG state if the
timing is exceeded. If this bit becomes "1", issue a reset command (See Section "3.2.1 Command
Sequences").
bit
Description
0
The flash memory HANG state has not been detected.
1
The flash memory HANG state has been detected.
[bit0] RDY: Flash Ready Status
Indicates whether flash memory write or erase operation using the automatic algorithm is in progress or
finished. While an operation is in progress, data cannot be written and the flash memory cannot be erased.
bit
Description
0
Operation in progress (cannot accept write/erase command)
1
Operation finished (can accept write/erase command)
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CHAPTER 1 Flash Memory
4. Registers
4.3. Flash Interrupt Control Register (FICR)
FICR register specifies the interrupt enable setting of FLASH memory.
bit
7
6
Field
5
4
3
Reserved
Attribute
Initial value
2
1
0
HANGIE
RDYIE
RW
0
RW
0
[bit7:2] Reserved bits
The read values are undefined. Ignored on write.
[bit1] HANGIE: HANG Interrupt Enable
This bit enables the flash HANG status interrupt. When the HANGIF bit of FISR register and this bit are
both "1", an interrupt to CPU is generated.
bit
Description
0
FLASH HANG interrupt is prohibited.(Initial value)
1
FLASH HANG interrupt is permitted.
[bit0] RDYIE: RDY Interrupt Enable
This bit enables the flash RDY status interrupt. When the RDYIF bit of FISR register and this bit are both
"1", an interrupt to CPU is generated.
bit
Description
0
FLASH RDY interrupt is prohibited.(Initial value)
1
FLASH RDY interrupt is permitted.
<Note>
Clear the bit in question of FISR register and set the bit of this register to "1" to enable the interrupt.
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CHAPTER 1 Flash Memory
4. Registers
4.4. Flash Interrupt Status Register (FISR)
FISR register indicates the interrupt status of FLASH memory.
bit
7
6
5
Field
4
Reserved
Attribute
Initial value
3
2
1
0
HANGIF
RDYIF
RW
0
RW
0
[bit7:2] Reserved bits
The read values are undefined. Ignored on write.
[bit1] HANGIF: HANG Interrupt Flag
This bit is set to "1" when the flash HANG status is detected. This bit is set with the rising edge of HANG
signal. This bit is cleared by writing "1" to HANGC bit of FICLR register.
bit
Description
0
FLASH HANG status is not detected. (Initial value)
1
FLASH HANG status is detected.
[bit0] RDYIF: RDY Interrupt Flag
This bit is set to "1" when the flash RDY status is detected. This bit is set with the rising edge of RDY
signal. This bit is cleared by writing "1" to RDYC bit of FICLR register.
bit
Description
0
FLASH RDY status is not detected. (Initial value)
1
FLASH RDY status is detected.
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CHAPTER 1 Flash Memory
4. Registers
4.5. Flash Interrupt Clear Register (FICLR)
FICLR register clears the interrupt flag of flash memory.
bit
7
6
Field
5
4
3
2
Reserved
Attribute
Initial value
1
0
HANGC
RDYC
W
0
W
0
[bit7:2] Reserved bits
The read values are undefined. Ignored on write.
[bit1] HANGC: HANG Interrupt Clear
This bit is the clear bit of HANG interrupt flag. This bit clears the HANGIF bit of FISR register by writing
"1" to this bit.
bit
Description
0
FLASH HANG interrupt flag (HANGIF) is not changed.
1
FLASH HANG interrupt flag (HANGIF) is cleared.
At Write
At Read
"0" is read.
[bit0] RDYC: RDY Interrupt Flag Clear
This bit is the clear bit of RDY interrupt flag. This bit clears RDYIF bit of FISR register by writing "1" to
this bit.
bit
Description
0
FLASH RDY interrupt flag (RDYIF) is not changed.
1
FLASH RDY interrupt flag (RDYIF) is cleared.
At Write
At Read
"0" is read.
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CHAPTER 1 Flash Memory
4. Registers
4.6. CR Trimming Data Mirror Register (CRTRMM)
CRTRMM register is the mirror register of the CR trimming data.
A value of this register can be used in the user mode and the serial writer mode.
 TYPE6 products
bit
31
10
Field
Reserved
9
0
TRMM
Attribute
Initial value
R
*
[bit31:10] Reserved bits
The read values are undefined. Ignored on write.
[bit9:0] TRMM : CR Trimming Data Mirror Register
After a reset is released, bit[9:0](CR Frequency Trimming Data) of Address "0x0010_2000" in Flash
Memory area are stored in this bit.
For details of CR Frequency Trimming data, see Chapter "High-speed CR Trimming Data" in "FM3 Family
Peripheral Manual" .
Field
TRMM
bit
9:0
Description
*: Reads bit[9:0] of Address "0x0010_2000".
<Note>
After deleting the flash memory data and issuing "Reset" signal inside the chip, this register is cleared. At
this time, the stored CR trimming data is deleted. So, save the stored CR trimming data to RAM etc. before
the data is deleted.
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CHAPTER 1 Flash Memory
4. Registers
 TYPE8 and TYPE9 products
bit
31
Field
21
20
Reserved
Attribute
Initial
Value
16
15
TTRMM
10
Reserved
9
0
TRMM
R
R
*
*
[bit31:21] Reserved bits
The read values are undefined. Ignored on write.
[bit20:16] TTRMM : Temperature CR Trimming Data Mirror Register
After a reset is released, bit[4:0](CR Temperature Trimming Data) of address "0x0010_2002" in Flash
Memory area are stored in this bit.
For details of CR Temperature Trimming data, see Chapter "High-speed CR Trimming Data" in "FM3
Family Peripheral Manual".
Field
bit
TTRMM
20:16
Description
*: Reads bit[4:0] of Address "0x0010_2002".
[bit15:10] Reserved bits
The read values are undefined. Ignored on write.
[bit9:0] TRMM : CR Trimming Data Mirror Register
After a reset is released, bit[9:0](CR Frequency Trimming Data) of Address "0x0010_2000" in Flash
Memory area are stored in this bit.
For details of CR Frequency Trimming data, see Chapter "High-speed CR Trimming Data" in "FM3 Family
Peripheral Manual" .
Field
bit
TRMM
9:0
Description
*: Reads bit[9:0] of Address "0x0010_2000".
<Note>
After deleting the flash memory data and issuing "Reset" signal inside the chip, this register is cleared. At
this time, the stored CR trimming data is deleted. So, save the stored CR trimming data to RAM etc. before
the data is deleted.
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CHAPTER 2 Flash Security
1. Overview
CHAPTER 2: Flash Security
The flash security function protects contents of the flash memory.
This section describes the overview and operations of the flash security.
1.
2.
Overview
Operation Explanation
CODE : 9BF510RSECURITY-E01.1
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CHAPTER 2 Flash Security
1. Overview
1. Overview
This section explains the overview of the flash security.
If the protection code of 0x0001 is written in the security code area of flash memory, access to the flash
memory is restricted. Once the flash memories are protected, performing the flash erase operation only can
unlock the function otherwise read/write access to the flash memory from any external pins is not possible.
This function is suitable for applications requiring security of self-containing program and data stored in the
flash memory.
Table 1-1 shows the address and the protection code of the security code.
Table 1-1 Address of security code and protection code
Address
Protection Code
0x0010_0000
0x0001
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CHAPTER 2 Flash Security
2. Operation Explanation
2. Operation Explanation
This section explains the operation of the flash security.
 Setting Security
Write the protection code 0x0001 in address of the security code. The security is enabled and set after all
the reset factors are generated or after turning on the power again.
 Releasing Security
The security is released by all the reset factors or power-on after the execution of flash erase.
 Operation with Security Enabled
The operations with security enabled vary depending on each mode.
Table 2-1 shows the security operations in each mode.
Table 2-1 Flash Operation with Security Enabled
Mode pin
Access to flash
MD1
MD0
Flash erase
Other
commands
Read
Access
from JTAG
pins
User mode
-
0
Enabled
Enabled
Valid data
Disabled
Serial writer mode
0
1
Enabled
Disabled
Invalid data
Disabled
Mode
<Notes>
 Writing the protection code is generally recommended to take place at the end of the flash programming.
This is to avoid unnecessary protection during the programming.
 In user mode, there is no limit to flash memory even during security is enabled. However, JTAG pins are
fixed not to access internally from these pins during security is enabled. To release security, perform the
flash erase operation using a serial writer because the security cannot be released through JTAG pins.
 When security enabled, the obstruction analysis of the flash memory cannot be performed.
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CHAPTER 2 Flash Security
2. Operation Explanation
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
CHAPTER 3: Serial Programming Connection
This series supports serial onboard write (Spansion standard) to flash memory. This chapter
explains the basic configuration for serial write to flash memory by using the Spansion Serial
Programmer.
1.
Serial Programmer
CODE : 9AB40NFSP-E03.0
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
1. Serial Programmer
Spansion Serial Programmer (software) is an onboard programming tool for all
microcontrollers with built-in flash memory.
Two types of Serial Programmer are available according to the PC interface (RS-232C or
USB) used. Choose the type according to your environment.
Onboard write is possible with the product which USB function is installed by connecting the
PC and microcontroller directly without performing USB-serial conversion.
1.1
Basic Configuration
1.2
Pins Used
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
1.1. Basic Configuration
This section explains the basic configuration.
 Basic Configuration of Spansion MCU Programmer (Clock Asynchronous
Serial Write)
Spansion MCU Programmer writes data, through clock asynchronous serial communication, to built-in
flash memory of a microcontroller installed in the user system when the PC and the user system are
connected through RS-232C cable.
In these series, serial programming (UART communication mode) is possible by any clock, crystal
oscillator or built-in High-speed CR oscillator.
Figure 1-1 shows the basic configuration of Spansion MCU Programmer, and
configuration.
lists the system
Figure 1-1 Basic Configuration of Spansion MCU Programmer
*
User system
RS-232C
* RS-232C driver IC is required separately.
Table 1-1 System Configuration of Spansion MCU Programmer
Name
Specifications
Spansion MCU Programmer
Software
(In case you request the data, contact to Spansion sales
representatives.)
RS-232C cable
Sold on the market.
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
 Connection Example of Spansion MCU Programmer
The following shows a connection example of Spansion MCU Programmer.
 When Crystal oscillator is used as the source oscillation clock
Figure 1-2 shows a connection example of Spansion MCU Programmer when a crystal oscillator is used as
a source oscillation clock and Table 1-2 O available frequencies and communication baud rates.
Figure 1-2 Connection example when using a crystal oscillator
User system
Source
oscillation
clock
VCC
MD1
Serial write: 0
10kΩ
Serial write: 1

 
X0

X1

MD0
Device
INITX
10kΩ
Serial write at UART
communication mode: 0
RS-232C
driver



P60/INT15_1
10kΩ

10kΩ
P21/SIN_0
P22/SOT0_0
RS-232C
VSS
Note: The pull-up resistance values shown are for example.
Select the most appropriate resistance values for each system.
Table 1-2 Oscillating frequency and communication baud rate available for clock
asynchronous serial communication
Source Oscillating Frequency
Communication Baud Rate
4MHz
9600bps
8MHz
19200bps
16MHz
38400bps
24MHz
57600bps
48MHz*
115200bps
*: TYPE9 Product Only
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
 When built-in high-speed CR oscillator is used as a source oscillation clock
Figure 1-3 shows a connection example of Spansion MCU Programmer when a built-in high-speed CR
oscillator is used as a source oscillation clock.
When neither crystal oscillator nor external clock is connected to X0/X1 pins, the built-in high-speed CR
oscillator is connected for communication.
The communication baud rate is 9600[bps] when built-in high-speed CR oscillator is used
The following are the restrictions when built-in high-speed CR oscillator is used
・Because the oscillation frequency of the built-in high-speed CR oscillator would fluctuate due to
temperature and voltage change, the allowable baud rate error range might be exceeded.
・For using the built-in high-speed CR oscillator, see "Built-in CR Oscillation Specifications" in "Data
Sheet" of the product used.
Figure 1-3 Connection Example When Built-in High-speed CR Oscillator is used
User system
VCC
MD1
Serial write: 0
10kΩ
Serial write: 1

 
MD0
Device
INITX
RS-232C driver

10kΩ
P21/SIN_0
P22/SOT0_0
RS-232C
VSS
Note: The pull-up resistor values shown are for example.
Select the most appropriate resistor values for each system.
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
Basic Configuration of Spansion USB DIRECT Programmer (USB Serial Write)
Spansion USB DIRECT Programmer writes data, through USB communication mode, to built-in flash
memory of a microcontroller when the PC and the user system are connected through a USB cable.
Figure 1-4 shows the basic configuration of Spansion USB DIRECT Programmer, and Table 1-1 lists the
system configuration.
Figure 1-4 Basic Configuration of Spansion USB DIRECT Programmer
USB serial communication
USB
User system
Table 1-1 System Configuration of Spansion USB DIRECT Programmer
Name
Specifications
Spansion USB DIRECT Programmer
Software
(In case you request the data, contact to Spansion sales
representatives.)
USB cable
Sold on the market.
For connection examples, see the manual (help section) of Spansion USB DIRECT Programmer.
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
Figure 1-5 Connection example using Spansion USB DIRECT Programmer
(own power supply is used, for TYPE6 and TYPE8 products)
User system
VCC
10kΩ
Serial write: 1
Serial write at USB
communication mode
4MHz : 0
48MHz : 1



Level
Shifter
27Ω


P60/INT15_1
51kΩ
UDM0
10Ω
Level
Shifter

100kΩ

P61/UHCONX
UDP0
27Ω
GND
X1
MD0
INITX
3.3V
1.5kΩ
D+

P22/SOT0_0
10kΩ
Vbus
X0
Device
10kΩ



USB
connector
D-
4MHz or
48MHz
MD1
Serial write: 0

VSS
Note: The pull-up and pull-down resistance values shown are for example.
Select the most appropriate resistance values for each system.
Insert a level shifter for each system.
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
Figure 1-6 Connection example using Spansion USB DIRECT Programmer
(own power supply is used, for TYPE9 products)
User system

VCC
10kΩ
Serial write: 1
Serial write at USB
communication mode
4MHz : 0
48MHz : 1

 
Regulator
3.3V output
27Ω

INITX

P60/INT15_1
51kΩ
UDM0
10Ω
Level
Shifter

100kΩ

P61/UHCONX
UDP0
27Ω
GND
X1
MD0
P22/SOT0_0
3.3V
1.5kΩ
D+

USBVCC
Level
Shifter
Vbus
D-
X0
Device
10kΩ



10kΩ
USB
connector
4MHz or
48MHz
MD1
Serial write: 0

VSS
Note: The pull-up and pull-down resistance values shown are for example.
Select the most appropriate resistance values for each system.
Insert a level shifter for each system.
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
Figure 1-7 Connection example using Spansion USB DIRECT Programmer
(bus power supply is used, for TYPE6 and TYPE8 products)
User system

VCC
10kΩ
Regulator
3.3V output
Serial write : 1
Serial write USB
communication mode
4MHz : 0
48MHz : 1

 

X1

MD0
P22/SOT0_0
10kΩ

X0
Device
10kΩ



USB
connector
Vbus
4MHz or
48MHz
MD1
Serial write : 0
INITX

P60/INT15_1
51kΩ
D27Ω
1.5kΩ
D+
UDM0
3.3V
10Ω
Level
Shifter


100kΩ
P61/UHCONX
UDP0
27Ω
GND

VSS
Note: The pull-up and pull-down resistance values shown are for example.
Select the most appropriate resistance values for each system.
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
Figure 1-8 Connection example using Spansion USB DIRECT Programmer
(bus power supply is used, for TYPE9 products)
User system

VCC
10kΩ
Serial write : 1
Serial write USB
communication mode
4MHz : 0
48MHz : 1
USB
connector
Vbus

 
X0

X1

MD0
Device
10kΩ



P22/SOT0_0
10kΩ
INITX
Regulator
3.3V output

4MHz or
48MHz
MD1
Serial write : 0
USBVCC


P60/INT15_1
51kΩ
D27Ω
1.5kΩ
D+
UDM0
3.3V
10Ω
Level
Shifter


100kΩ
P61/UHCONX
UDP0
27Ω
GND

VSS
Note: The pull-up and pull-down resistance values shown are for example.
Select the most appropriate resistance values for each system.
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52
CHAPTER 3 Serial Programming Connection
1. Serial Programmer
1.2. Pins Used
This section explains the used pins.
Table 1-2 Pins used for serial write
Pins
Function
Supplement
MD0, MD1
Mode pin
Performing an external reset or turning on the power after setting
MD0=H and MD1=L enters the serial write mode.
When attaching a pull-up or pull-down resistor, avoid long wiring.
X0, X1
Oscillation pin
See the "Data Sheet" of a product used for the source oscillation
clock (main clock) frequencies that can be used in serial write
mode.
(Restrictions apply to clock asynchronous communication. For
details, see Table 1-2.) In UART communication mode, the write
operation is available without main clock.
P22/SOT0_0
UART serial data
output pin/
USB source
oscillating frequency
select pin
When the communication mode is set to UART, this pin becomes a
serial data output pin when communication begins after the serial
write mode is activated.
When the communication mode is set to USB, this pin controls the
frequency for source oscillation clock.
P22=L : source oscillation frequency : 4MHz
P22=H : source oscillation frequency: 48MHz
P21/SIN0_0
Clock synchronous/
asynchronous select
pin/UART serial data
input pin
Setting the input level of this pin to "H" until the start of
communication enables the clock asynchronous communication
mode, and setting it to "L" enables the clock synchronous
communication mode. When the communication mode is set to
UART, this pin can be used as a serial data input pin when
communication begins after the serial write mode is activated.
P60/INT15_1
Communication
mode select pin
The communication mode is determined by the input level of this
pin at reset to shift to the serial write mode.
Setting this pin to "H" enables the USB communication mode, and
setting it to "L" enables the UART communication mode.
P61/UHCONX Pull-up control pin
for UDP0
This pin controls the pull-up of USB side (D+) when the
communication mode is USB.
UHCONX=L : Connect the pull-up resistor
UHCONX=H : Disconnect the pull-up resistor
UDP0
USB I/O pin
This pin becomes an input/output pin of USB side (D+) when the
communication mode is set to USB.
UDM0
USB I/O pin
This pin becomes an input/output pin of USB side (D-) when the
communication mode is set to USB.
INITX
Reset pin
-
VCC
Power supply pin
For writing, supply power to the microcontroller from the user
system.
USBVCC
Power supply pin for
USB I/O
USBVCC pin is available only for TYPE9 product.
VSS
GND pin
-
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CHAPTER 3 Serial Programming Connection
1. Serial Programmer
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54
F L A S H
P R O G R A M M I N G
M A N U A L
MAJOR CHANGES
Page
Section
Revision 1.0
Revision 2.0
-
2
4
7, 8
Change Results
-
Initial release
-
TYPE8 and TYPE9 products are added.
For TYPE6 products, product type with A added.
CHAPTER 1: Flash Memory
1. Overview
Dual Operation Flash Memory Features
The following description added:
"When the pre-fetch buffer function is enabled at the operation of up to
72 MHz, 0 wait could be realized (only for TYPE 9 product)".
2. Configuration
Figure 2-1 added.
Figure 2-4 and Figure 2-5 added.
15
3.2.2. Command Operations
Sector Erase Command
Description on sectors to be erased added.
16
3.2.3. Automatic Algorithm Run State
Figure 3-1 corrected.
Undefined bit --> Reserved bit
17
 Bit explanation
Reference mark changed to (Note) from 1).
bit17 --> bit7
Undefined bits --> Reserved bits
21
3.3.2. Write Operation
Bit name corrected.
PGRM --> PGMS
22
3.3.3. Flash Erase Operation
Corrected from "CES" to "CERS".
4.1 FRWTR (Flash Read Wait Register)
TYPE6 and TYPE8 products added.
Changed from "0 to 1 cycles wait mode" to "Pre-fetch mode".
Description on TYPE9 for Freesia product is added.
CHAPTER 3: Serial Programming Connection
1. Serial Programmer
1.1. Basic Configuration
Table 1-2 in columns of "Source Oscillating Frequency 48MHz"
deleted.
29, 30
44
47, 49
Revision 2.1
Revision 3.0
4 - 10
Figure 1-5 and Figure 1-7 added.
-
Company name and layout design change
-
Part number added to TYPE6 and TYPE8 products.
CHAPTER 1: Flash Memory
2.Configuration
Corrected Title of Table 2-1 and Figure2-1 to 2-6.
11
3. Operation Explanation
Corrected Title of 3.4.
14
3.2.1.Command Sequences
Added notes pertaining to CR Temperature Trimming Data.
30
4.Registers
4.1. Flash Read Wait Register (FRWTR)
Corrected description of RWT = 01.
38
4.6.CR Trimming
(CRTRMM)
Split a description for each product.
Added description of “CR Temperature
TYPE8/TYPE9 product.
10
Data
Figure 2-7 added.
Mirror
Register
Trimming
Data”
to
Corrected description of “Basic Configuration of Spansion MCU
Programmer (Clock Asynchronous Serial Write)”
46
CHAPTER 3: Serial Programming Connection
1.Serial Programmer
1.1.Basic Confuguration
53
1.2.Pins Used
Corrected description of “X0,X1”
45
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CONFIDENTIAL
Added “Connection Example of Spansion MCU Programmer”
55
F L A S H
56
CONFIDENTIAL
P R O G R A M M I N G
M A N U A L
MB9AB40N_MN706-00019-3v0-E, September 8, 2014
MN706-00019-3v0-E
Spansion・Controller Manual
32-BIT MICROCONTROLLER
MB9AB40N/A40N/340N/140N/150R/
MB9B520M/320M/120M Series
FLASH PROGRAMMING MANUAL
September 2014 Rev. 3.0
Published:
Edited:
Spansion Inc.
Corporate Communications Dept.
September 8, 2014, MB9AB40N_MN706-00019-3v0-E
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57
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use
where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not
be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the
products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss
from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire
protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in
this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and
Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the
prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a
Spansion product under development by Spansion. Spansion reserves the right to change or discontinue work on any
product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to
its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party
rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any damages of any kind
arising out of the use of the information in this document.
Copyright © 2012-2014 Spansion. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® EclipseTM,
ORNANDTM, Easy DesignSimTM, TraveoTM and combinations thereof, are trademarks and registered trademarks of
Spansion LLC in the United States and other countries. Other names used are for informational purposes only and may be
trademarks of their respective owners.
September 8, 2014, MB9AB40N_MN706-00019-3v0-E
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