X062-E1-06_Revision.book 72 ページ ２０１０年１０月２９日 金曜日 午後７時５３分 Photomicrosensor (Transmissive) EE-SX1115 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • 14.5-mm-tall model with a deep slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. Four, C0.3 1.03 Four, R0.1 ■ Absolute Maximum Ratings (Ta = 25°C) 5 1.35 1.35 +0.06 −0.01 +0.06 −0.01 Item 14 0.2 Part B 5 Emitter 0.5±0.05 Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) A Four, R0.1 Optical axis 1.03 1.35 +0.06 −0.01 14.5 12±0.4 1.35 +0.06 −0.01 Detector Part C 2.5 2-2 5 min. A Four, 0.25 Four, 0.5 (11.2) K (1.94) C Cross section AA 1.75±0.1 A E B (2.1) Internal Circuit K C A Name A K C Anode Cathode Collector E Emitter 4.2±0.1 C Soldering temperature Unless otherwise specified, the tolerances are as shown below. E Terminal No. Ambient temperature Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 72 EE-SX1115 Photomicrosensor (Transmissive) X062-E1-06_Revision.book 73 ページ ２０１０年１０月２９日 金曜日 午後７時５３分 ■ Engineering Data Ambient temperature Ta (°C) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 Relative light current IL (%) Response time tr, tf (μs) VCC = 5 V Ta = 25°C Ta = 70°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Collector−Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25°C IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) 80 Distance d (mm) d 60 40 20 0 −2.0 Load resistance RL (kΩ) IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) Light current IL (mA) Ta = 25°C Ta = −30°C Forward voltage VF (V) Relative light current IL (%) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Ta = 25°C VCE = 10 V Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1115 Photomicrosensor (Transmissive) 73