Datasheet

X062-E1-06_Revision.book
72 ページ
2010年10月29日 金曜日 午後7時53分
Photomicrosensor (Transmissive)
EE-SX1115
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• 14.5-mm-tall model with a deep slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
Four, C0.3
1.03
Four, R0.1
■ Absolute Maximum Ratings (Ta = 25°C)
5
1.35
1.35
+0.06
−0.01
+0.06
−0.01
Item
14
0.2
Part B
5
Emitter
0.5±0.05
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
A
Four, R0.1
Optical axis
1.03
1.35 +0.06
−0.01
14.5
12±0.4
1.35 +0.06
−0.01
Detector
Part C
2.5
2-2
5 min.
A
Four, 0.25
Four, 0.5
(11.2)
K
(1.94)
C
Cross section AA
1.75±0.1
A
E
B
(2.1)
Internal Circuit
K
C
A
Name
A
K
C
Anode
Cathode
Collector
E
Emitter
4.2±0.1
C
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
E
Terminal No.
Ambient temperature
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Forward voltage
Symbol
Value
VF
1.2 V typ., 1.5 V max.
Condition
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
72
EE-SX1115 Photomicrosensor (Transmissive)
X062-E1-06_Revision.book
73 ページ
2010年10月29日 金曜日 午後7時53分
■ Engineering Data
Ambient temperature Ta (°C)
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current IL (mA)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
Relative light current IL (%)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
Light current IL (mA)
Ta = 25°C
Ta = −30°C
Forward voltage VF (V)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Dark current ID (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1115 Photomicrosensor (Transmissive)
73
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