Datasheet

Photomicrosensor (Transmissive)
EE-SX1137
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 5-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Detector
Ambient temperature
Internal Circuit
K
C
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
±0.3
Rated value
IF
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
3 mm max.
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
82
EE-SX1137 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
Light current IL (mA)
Ta = 25°C
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Forward current IF (mA)
Forward voltage VF (V)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Dark current ID (nA)
Forward current IF (mA)
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
Distance d (mm)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1137 Photomicrosensor (Transmissive)
83
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