Photomicrosensor (Transmissive) EE-SX1137 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • General-purpose model with a 5-mm-wide slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Emitter Detector Ambient temperature Internal Circuit K C A E Terminal No. A K C E Name Anode Cathode Collector Emitter Dimensions 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance ±0.3 Rated value IF Soldering temperature Unless otherwise specified, the tolerances are as shown below. 3 mm max. Symbol Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Detector 82 EE-SX1137 Photomicrosensor (Transmissive) ■ Engineering Data Ambient temperature Ta (°C) Light current IL (mA) Ta = 25°C IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Light current IL (mA) Ta = −30°C Ta = 25°C Ta = 70°C Forward current IF (mA) Forward voltage VF (V) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (°C) Collector−Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25°C VCE = 10 V Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Dark current ID (nA) Forward current IF (mA) Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25°C Relative light current IL (%) Response time tr, tf (μs) Load resistance RL (kΩ) Relative light current IL (%) 120 VCC = 5 V Ta = 25°C 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1137 Photomicrosensor (Transmissive) 83