Datasheet

Photomicrosensor (Transmissive)
EE-SX1140
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 14-mm-wide slot.
• 16.3-mm-tall model with a deep slot.
• PCB mounting type.
Four, C0.3
Four, 0.8
3.2±0.1 dia. through-hole
3
■ Absolute Maximum Ratings (Ta = 25°C)
5
Four, 0.8
Item
14
Emitter
23
0.2
A B
Optical
axis
Detector
16.3
12.5±0.15
(13.5)
5.2
2.8
C
A B
Four, 0.5
4.5±0.5
K
Four, 0.25
(2.5)
Cross section AA
A
(2.5)
Cross section BB
(19.9)
Ambient temperature
Internal Circuit
C
K
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
E
A
Dimensions
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
1.5
1.5
E
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.4 mA min.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
84
EE-SX1140 Photomicrosensor (Transmissive)
■ Engineering Data
150
100
30
50
20
10
−20
0
20
40
60
0
100
80
Ta = −30°C
Ta = 25°C
40
Ta = 70°C
30
20
0
10
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
IF = 30 mA
5
IF = 20 mA
3
IF = 10 mA
2
1
0
1
2
3
4
5
6
7
8
9
10,000
Relative light current IL (%)
VCC = 5 V
Ta = 25°C
Response time tr, tf (μs)
0.8
1
1.2
1.4
1.6
2
1.8
0
100
90
80
70
1,000
tf
100
tr
10
Load resistance RL (kΩ)
20
40
60
30
40
50
80
100
VCE = 10 V
0 lx
1,000
100
10
1
0.1
0.01
0.001
−30 −20 −10 0
10 20 30 40 50 60 70 80 90
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
d
80
60
40
20
0
10
1
0
20
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
10,000
−20
10
Forward current IF (mA)
110
60
−40
10
Response Time vs. Load Resistance Characteristics (Typical)
0.1
0.6
IF = 20 mA
VCE = 5 V
Collector−Emitter voltage VCE (V)
1
0.01
0.4
120
7
4
0.2
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
IF = 50 mA
9
6
4
Forward voltage VF (V)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
8
6
0
0
Ambient temperature Ta (°C)
Ta = 25°C
8
10
Dark current ID (nA)
0
−40
Ta = 25°C
VCE = 10 V
50
−1.5 −0.75
0
0.75
1.5
2.25
Distance d (mm)
3
Relative light current IL (%)
40
10
Light current IL (mA)
PC
Forward current IF (mA)
IF
50
Light Current vs. Forward Current
Characteristics (Typical)
60
Collector dissipation PC (mW)
60
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
Forward Current vs. Collector
Dissipation Temperature Rating
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
0
t
Output
90%
10%
0
t
tf
tr
Input
IL
VCC
Output
RL
EE-SX1140 Photomicrosensor (Transmissive)
85
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