Photomicrosensor (Transmissive) EE-SX129 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • High-resolution model with a 0.2-mm-wide sensing aperture. • PCB mounting type. 13 ■ Absolute Maximum Ratings (Ta = 25°C) 8 1 +0.5 0 5 6 Item 0.5 min. 3 Part B 2.5 Optical axis 2 2.1+0.2 0 dia. A 2 holes Detector 13.4±2 0.25 0.5 9.2±0.3 0.8 1.94±0.2 E A C K E C A K Symbol Cross section AA Ambient temperature IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –40°C to 100°C Tsol 260°C (see note 3) Internal Circuit E A C K Terminal No. Name A Anode K C E Cathode Collector Emitter Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current 0.2 A B 3±0.3 5 8 5 2.5 R2.5 0.2 Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 920 nm typ. IF = 20 mA Light current IL 0.2 mA min. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) --- --- Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 88 EE-SX129 Photomicrosensor (Transmissive) ■ Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Collector−Emitter voltage VCE (V) Response time tr, tf (μs) VCC = 5 V Ta = 25°C VCE = 10 V 0 lx Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) -0.2 Load resistance RL (kΩ) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (mA) Relative Light Current vs. Ambient Temperature Characteristics (Typical) -0.1 0 0.1 0.2 Distance d (mm) 0.3 0.4 Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) IF = 40 mA Forward current IF (mA) Dark current ID (nA) IF = 50 mA Ta = 70°C Relative light current IL (%) Light current IL (mA) Ta = 25°C Ta = 25°C Forward voltage VF (V) Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Ta = −30°C Relative light current IL (%) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output Input 90 % 10 % Vcc Output EE-SX129 Photomicrosensor (Transmissive) 89