Datasheet

Photomicrosensor (Transmissive)
EE-SX129
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-resolution model with a 0.2-mm-wide sensing aperture.
• PCB mounting type.
13
■ Absolute Maximum Ratings (Ta = 25°C)
8
1 +0.5
0
5
6
Item
0.5 min.
3
Part B
2.5
Optical
axis
2
2.1+0.2
0 dia.
A
2
holes
Detector
13.4±2
0.25
0.5
9.2±0.3
0.8
1.94±0.2
E
A
C
K
E
C
A
K
Symbol
Cross section AA
Ambient temperature
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–40°C to
100°C
Tsol
260°C
(see note 3)
Internal Circuit
E
A
C
K
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
0.2
A B
3±0.3
5
8
5
2.5
R2.5
0.2
Emitter
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Forward voltage
Symbol
Value
VF
1.2 V typ., 1.5 V max.
Condition
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
920 nm typ.
IF = 20 mA
Light current
IL
0.2 mA min.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
---
---
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
88
EE-SX129 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
-0.2
Load resistance RL (kΩ)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
Light current IL (mA)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
-0.1
0
0.1
0.2
Distance d (mm)
0.3
0.4
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 40 mA
Forward current IF (mA)
Dark current ID (nA)
IF = 50 mA
Ta = 70°C
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = −30°C
Relative light current IL (%)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
Input
90 %
10 %
Vcc
Output
EE-SX129 Photomicrosensor (Transmissive)
89
Similar pages