Photomicrosensor (Transmissive) EE-SX1070 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Wide model with a 8-mm-wide slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. JAPAN 17.7 6±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) Item 0.5±0.1 8 +0.2 −0.1 Two, C1 Emitter Optical axis 0 10 −0.2 7.5±0.2 2.2 2.5 6.2 Detector Two, 0.7±0.1 Four, 0.5 Four, 0.25 (2.5) (13.8) 2.35±0.1 (2.5) 5.2±0.1 K C A E 6.6±0.1 Ambient temperature Two, 0.7±0.1 dia. Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 95°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Internal Circuit K C A E Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. Terminal No. A K C E Name Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 46 EE-SX1070 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Light Current vs. Forward Current Characteristics (Typical) 100 30 50 20 10 −20 0 20 40 60 Ta = 25°C Ta = 70°C 0 100 80 Ambient temperature Ta (°C) Ta = 25°C IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector−Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Forward current IF (mA) Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Light current IL (mA) Ta = −30°C Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Dark current ID (nA) 0 −40 Ta = 25°C VCE = 10 V Light current IL (mA) PC 40 Forward current IF (mA) IF 50 Collector dissipation PC (mW) 150 60 Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Relative light current IL (%) Response time tr, tf (μs) Load resistance RL (kΩ) Relative light current IL (%) 120 VCC = 5 V Ta = 25°C 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1070 Photomicrosensor (Transmissive) 47