Datasheet

Photomicrosensor (Transmissive)
EE-SX1106
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact with a slot width of 3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Two, C0.7
Gate
Emitter
Optical
axis
5.4
Detector
5 min.
Two, R1
Four, 0.2
Two, C0.2
Four, 0.5
Internal Circuit
Ambient temperature
0
dia
1−0.1
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
---
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
4.5 V
Collector current
IC
30 mA
Collector dissipation
PC
80 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 85°C
Tsol
260°C
(see note 2)
Soldering temperature
0
1.4 −0.1 dia
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 3 seconds.
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Symbol
Value
VF
1.3 V typ., 1.6 V max.
Condition
IF = 50 mA
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
950 nm typ.
IF = 50 mA
Light current
IL
0.2 mA min.
IF = 20 mA, VCE = 5 V
Dark current
ID
500 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
800 nm typ.
VCE = 5 V
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Detector
60
EE-SX1106 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Forward
Voltage Characteristics (Typical)
Ambient temperature Ta (°C)
IF = 15 mA
IF = 10 mA
IF = 5 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCE = 5 V
Ta = 25°C
RL = 1K Ω
RL = 500 Ω
RL = 100 Ω
Light current It (mA)
Light current IL (mA)
VCE = 10 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Light Current
Characteristics (Typical)
VCE = 30 V
VCE =20 V
IF = 20 mA
VCE = 5 V
Ta = 25°C
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 20 mA
IF = 20 mA
VCE = 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark current ID (nA)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
IF = 25 mA
Forward current IF (mA)
Forward voltage VF (V)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 5 V
Forward current IF (mA)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 5 V
Ta = 25°C
Distance d (mm)
Response Time Measurement Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1106 Photomicrosensor (Transmissive)
61
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