Datasheet

Photomicrosensor (Transmissive)
EE-SX153
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
0.5
EE-SX
153
6.2
6.4
JAPAN
13.6
2
0.3
3.4±0.2
0.2
■ Absolute Maximum Ratings (Ta = 25°C)
2.1
A
General-purpose model with a 3.4-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
With a horizontal sensing aperture.
Screw-mounting possible.
3.2
Item
3.2±0.2dia. holes
10.2
0.5
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–40°C to
100°C
Tsol
260°C
(see note 3)
7.2±0.2
6
3
3
Two, R1
7.8
1.2
0.6
Four, 0.8
Four, 1.5
A
Four, 0.25
7.6±0.2
K
C
K
C
A
E
A
Detector
Two, 2.54
Cross section AA
E
Internal Circuit
K
Ambient temperature
C
Unless otherwise specified, the
tolerances are as shown below.
A
Terminal No.
A
K
C
E
Dimensions
E
Soldering temperature
Tolerance
3 mm max.
±0.3
Name
3 < mm ≤ 6
±0.375
Anode
Cathode
Collector
Emitter
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
92
EE-SX153 Photomicrosensor (Transmissive)
■ Engineering Data
Ta = −30°C
Ta = 25°C
Ta = 70°C
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Dark current ID (nA)
IF = 40 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
120
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
80
d
60
40
20
0
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
VCE = 10 V
0 lx
−0.5 −0.25
0
0.25
0.5
0.75
Distance d (mm)
1.0
Relative light current IL (%)
IF = 50 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
(Center of optical axis)
Ta = 25°C
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (mA)
Light current IL (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
100
d
80
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX153 Photomicrosensor (Transmissive)
93
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