Photomicrosensor (Transmissive) EE-SX153 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 0.5 EE-SX 153 6.2 6.4 JAPAN 13.6 2 0.3 3.4±0.2 0.2 ■ Absolute Maximum Ratings (Ta = 25°C) 2.1 A General-purpose model with a 3.4-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. With a horizontal sensing aperture. Screw-mounting possible. 3.2 Item 3.2±0.2dia. holes 10.2 0.5 Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –40°C to 100°C Tsol 260°C (see note 3) 7.2±0.2 6 3 3 Two, R1 7.8 1.2 0.6 Four, 0.8 Four, 1.5 A Four, 0.25 7.6±0.2 K C K C A E A Detector Two, 2.54 Cross section AA E Internal Circuit K Ambient temperature C Unless otherwise specified, the tolerances are as shown below. A Terminal No. A K C E Dimensions E Soldering temperature Tolerance 3 mm max. ±0.3 Name 3 < mm ≤ 6 ±0.375 Anode Cathode Collector Emitter 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Detector 92 EE-SX153 Photomicrosensor (Transmissive) ■ Engineering Data Ta = −30°C Ta = 25°C Ta = 70°C Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (°C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 30 mA IF = 20 mA IF = 10 mA Dark current ID (nA) IF = 40 mA Collector−Emitter voltage VCE (V) Response time tr, tf (μs) VCC = 5 V Ta = 25°C Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) 120 120 IF = 20 mA VCE = 10 V Ta = 25°C 100 80 d 60 40 20 0 Load resistance RL (kΩ) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) VCE = 10 V 0 lx −0.5 −0.25 0 0.25 0.5 0.75 Distance d (mm) 1.0 Relative light current IL (%) IF = 50 mA Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V (Center of optical axis) Ta = 25°C Relative light current IL (%) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Light current IL (mA) Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) 100 d 80 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX153 Photomicrosensor (Transmissive) 93