Datasheet

Photomicrosensor (Transmissive)
EE-SX198
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 3-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
12.2±0.3
■ Absolute Maximum Ratings (Ta = 25°C)
5±0.1
Item
Four, C0.3
0.5±0.1
Emitter
Optical
axis
10±0.2
8.5±0.1
Two, C1±0.3
6.5+0.1
Detector
6.2±0.5
Four, 0.5±0.1
Four, 0.25±0.1
2.5±0.1
Cross section BB
9.2±0.3
Cross section AA
Ambient temperature
Internal Circuit
K
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
C
Soldering temperature
A
E
Terminal No.
A
K
C
E
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Name
Anode
Cathode
Collector
Emitter
Rated value
Forward current
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
VF
1.2 V typ., 1.4 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 5 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 20 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 40 mA, IL = 0.5 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Forward voltage
IF = 30 mA
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
94
EE-SX198 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Response Time Measurement
Circuit
Light current IL (mA)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 70°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Distance d (mm)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 30 mA
Ta = 25°C
Dark current ID (nA)
IF = 40 mA
Ta = −30°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
IF = 50 mA
Ta = 25°C
VCE = 10 V
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Input
Output
90 %
10 %
Input
Output
EE-SX198 Photomicrosensor (Transmissive)
95
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