Datasheet

Photomicrosensor (Transmissive)
EE-SV3 Series
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available.
• Solder terminal models:
EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS
• PCB terminal models
EE-SV3-B/-SV3-C/-SV3-D/-SV3-G
Center mark
■ Absolute Maximum Ratings (Ta = 25°C)
Four,
R1
Four, 0.25
Four, R1
Two,
3.2±0.2 dia.
holes
Four, 1.5
2.54±0.2
Detector
2.54±0.2
Cross section AA
Model
K
Four, 0.5
Two,
3.2±0.2 dia.
holes
Cross section AA
EE-SV3(-B)
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
Internal Circuit
Emitter
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Dimensions
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
IF
50 mA
(see note 1)
Pulse forward
current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter voltage
VCEO
30 V
Emitter–Collector voltage
VECO
---
Collector current IC
20 mA
Collector dissipa- PC
tion
100 mW
(see note 1)
Topr
–25°C to
85°C
Storage
Tstg
–30°C to
100°C
Soldering temperature
Tsol
260°C
(see note 3)
Unless otherwise specified, the
tolerances are as shown below.
E
Symbol Rated value
Forward current
Ambient tem- Operating
perature
C
A
Item
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
EE-SV3(-B)
Emitter
Detector
EE-SV3-D(S)
Condition
EE-SV3-G(S)
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 to 14 mA
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V,
0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
Peak spectral sensitivity λP
wavelength
1 to 28 mA
0.1 mA min.
---
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
IF = 20 mA,
VCE = 10 V
IF = 20 mA,
IL = 0.1 mA
850 nm typ.
VCE = 10 V
VCC = 5 V,
RL = 100 Ω,
IL = 5 mA
Rising time
tr
4 μs typ.
Falling time
tf
4 μs typ.
114
EE-SV3-C(S)
EE-SV3 Series Photomicrosensor (Transmissive)
■ Engineering Data
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
VCC = 5 V
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
−
d
0
+
Center of optical axis
Distance d (mm)
Light current IL (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Center of optical axis
Sensing Position Characteristics
(EE-SV3-C(S))
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Sensing Position Characteristics
(EE-SV3(-B))
Distance d (mm)
Relative light current IL (%)
Relative light current IL (%)
Sensing Position Characteristics
(EE-SV3-G(S))
IF = 20 mA
VCE = 5 V
Sensing Position Characteristics
(EE-SV3-D(S))
Load resistance RL (kΩ)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (μs)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SV3(-B))
Ta = −30°C
Dark current ID (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
IF
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Center of optical axis
Distance d (mm)
Response Time Measurement
Circuit
Input
Center of optical axis
Output
90 %
10 %
Input
Output
Distance d (mm)
EE-SV3 Series Photomicrosensor (Transmissive)
115
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