MICROSEMI VRF152E

VRF152E
50V, 150W, 175MHz
RF POWER VERTICAL MOSFET
The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband
commercial and military applications requiring high power and gain without
compromising reliability, ruggedness, or inter-modulation distortion.
M174A
FEATURES
• Enhanced Package for 30% higher PD
• 30:1 Load VSWR Capability at Specified Operating Conditions
• Improved Ruggedness V(BR)DSS = 130V
• Nitride Passivated
• 150W with 22dB Typical Gain @ 30MHz, 50V
• Refractory Gold Metallization
• 150W with 14dB Typical Gain @ 175MHz, 50V
• Drop in Replacement for SD2941-10
• Excellent Stability & Low IMD
• RoHS Compliant
Maximum Ratings
Symbol
VDSS
ID
All Ratings: TC =25°C unless otherwise specified
Parameter
Drain-Source Voltage
VRF152E
Unit
130
V
Continuous Drain Current @ TC = 25°C
20
A
VGS
Gate-Source Voltage
±40
V
PD
Total Device dissipation @ TC = 25°C
390
W
TSTG
TJ
Storage Temperature Range
-65 to 150
Operating Junction Temperature
°C
200
Static Electrical Characteristics
Symbol
Parameter
Min
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 50mA)
130
RDS(ON)
Drain-Source On-State Resistance 1 (VGS = 10V, ID = 10A)
Typ
Max
Unit
0.13
0.20
Ohms
V
IDSS
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
50
μA
IGSS
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
1.0
μA
gfs
Forward Transconductance (VDS = 10V, ID = 5A)
5.0
6.2
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
2.9
3.6
4.4
V
Min
Typ
Max
Unit
0.45
°C/W
mhos
Symbol
RθJC
Characteristic
Junction to Case Thermal Resistance
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-4956 Rev A 10-2009
Thermal Characteristics
Dynamic Characteristics
Symbol
VRF152E
Parameter
Test Conditions
Min
Typ
CISS
Input Capacitance
VGS = 0V
383
Coss
Output Capacitance
VDS = 50V
215
Crss
Reverse Transfer Capacitance
f = 1MHz
20
Max
Unit
pF
Functional Characteristics
Symbol
Parameter
GPS
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
GPS
f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W
ηD
f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
Min
Typ
18
22
Max
14
50
IMD(d3)
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
IMD(d11)
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
ψ
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
30:1 VSWR - All Phase Angles
-30
1
-60
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
40
ID, DRAIN CURRENT (A)
35
30
40
13V
10V
9V
8V
7V
15
6V
10
VGS = 5V
5
0
TJ= -55°C
30
25
20
250μs PULSE
TEST<0.5 % DUTY
CYCLE
35
ID, DRAIN CURRENT (A)
15V
25
4
8
12
16
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
FIGURE 1, Output Characteristics
TJ= 25°C
20
TJ= 125°C
15
10
5
0
0
V
0
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
30
1000
IDMax
20
050-4956 Rev A 10-2009
100
ID, DRAIN CURRENT (A)
C, CAPACITANCE
Ciss
Coss
Pdmax
10
Rds(on)
10
0
20
40
60
80
100
120
VDS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
DC line
TJ = 125°C
TC = 75°C
Crss
1
1
dB
%
dBc
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
45
Unit
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
VRF152E
Typical Performance Curves
0.45
D = 0.9
0.40
0.35
0.7
0.30
0.25
0.5
Note:
0.20
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.50
0.3
0.15
t1
t2
0.10
t1 = Pulse Duration
t
0.1
0.05
0.05
0
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10 -1
10-2
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0.9
26
250
Vdd=50V, Idq = 250mA,
Freq=30MHz
24
200
0.7
0.6
22
0.5
0.4
20
0.3
OUTPUT POWER
30MHz Efficiency and Gain
0.8
0.2
18
150
100
50
0.1
16
0
50
100
150
200
OUTPUT POWER (WATTS PEP)
Figure 6. Gain and Efficiency vs Pout
250
14
0
0
0
0.8
1
1.2
1.4
Vdd=50V, Idq = 250mA,
Freq=175MHz
200
0. 7
0. 6
0. 5
0. 4
0. 3
0. 2
OUTPUT POWER
150
100
50
0. 1
8
0
50
100
150
200
OUTPUT POWER (WATTS PEP)
Figure 8. Gain and Efficiency vs Pout
250
0
0
0
5
10
50
INPUT POWER (WATTS PEP)
Figure 9. POUT versus PIN
20
050-4956 Rev A 10-2009
175MHz Efficiency and Gain
0.6
250
0. 8
10
0.4
INPUT POWER (WATTS PEP)
Figure 7. POUT versus PIN
0. 9
12
0.2
VRF152E
30 MHz test Circuit
175 MHz test Circuit
.5” SOE Package Outline
All Dimensions are ± .005
DIM
A
U
M
1
M
Q
4
R
PIN 1 - SOURCE
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - DRAIN
2
B
3
D
K
050-4956 Rev A 10-2009
H
E
C
Seating Plane
MILLIMETERS
MIN
MAX
MIN
MAX
A
0.096
0.990
24.39
25.14
B
0.465
0.510
11.82
12.95
C
0.229
0.275
5.82
6.98
D
0.216
0.235
5.49
5.96
E
0.084
0.110
2.14
2.79
H
0.144
0.178
3.66
4.52
J
0.003
0.007
0.08
0.17
K
0.435
M
J
INCHES
11.0
45° NOM
45° NOM
Q
0.115
0.130
2.93
3.30
R
0.246
0.255
6.25
6.47
U
0.720
0.730
18.29
18.54
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