Power MOSFET Selection Guide Smaller, faster, cooler 2 Table of contents Featured product: NextPowerS3.......................................................................................................5 Featured product: NextPower Live...................................................................................................8 Featured product: NextPower Cordless...........................................................................................10 Featured Package LFPAK56...........................................................................................................12 Featured Package LFPAK33............................................................................................................13 Featured Packages I2PAK/TO-220...................................................................................................14 Featured Package D2PAK................................................................................................................15 LFPAK56 soldering and footprint....................................................................................................16 LFPAK33 soldering and footprint....................................................................................................18 How to select a Power MOSFETs......................................................................................................21 20 V - 25 V N-channel MOSFETs.....................................................................................23 and 24 30 V N-channel MOSFETs......................................................................................................26-27 40 V - 50 V N-channel MOSFETs.................................................................................................28 55 V - 60 V N-channel MOSFETs.....................................................................................29 and 30 75 V - 80 V N-channel MOSFETs.................................................................................................31 100 V N-channel MOSFETs ............................................................................................32 and 33 105 V - 150 V N-channel MOSFETs ............................................................................................34 200 V - 300 V N-channel MOSFETs.............................................................................................35 P-channel MOSFETs...............................................................................................................36-38 Multichip MOSFETs.........................................................................................................39 and 40 Automotive Grade Power MOSFETs...............................................................................................41 How to select an Automotive Power MOSFETs...............................................................................44 30 V N-channel Automotive MOSFETs........................................................................................45 40 V N-channel Automotive MOSFETs............................................................................46 and 47 55 V - 60 V N-channel Automotive MOSFETs.........................................................................48-51 75 V N-channel Automotive MOSFETs........................................................................................52 100 V N-channel Automotive MOSFETs..........................................................................53 and 54 TrenchPLUS MOSFETs ................................................................................................................55 Quick Learning Videos....................................................................................................................57 3 Committed to Excellence Not all power MOSFETs are the same. NXP power MOSFETs are designed differently and built differently, offering power design engineers unparalleled reliability and performance. #1 for Automotive MOSFETs NXP offers the industry’s largest portfolio of automotive-qualified power MOSFETs, employed in safety-critical applications as diverse as braking, steering and engine management. Our structured approach to quality & reliability stretches far beyond our automotive products, permeating every aspect of our business. The Toughest Power Packages Based on a unique copper clip construction, NXP’s LFPAK packages include stressabsorbing external leads that can be inspected without the need for specialist X-ray equipment. The result is an ultra-reliable device capable of handling a maximum continuous drain current of up to 100A and a maximum junction temperature of up to 175oC, yet on a footprint that is 100% compatible with its peers. More Performance & Less Leakage for DC:DC Applications NXP’s new NextPowerS3 low voltage MOSFETs are the first to deliver the high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. Efficiency is excellent, even at higher frequencies, making NextPowerS3 the perfect choice for high power density DC:DC applications. #1 for Hot-swap MOSFETs In applications such as hot-swap and soft-start, power MOSFETs are deliberately turned on/off slowly to limit in-rush currents, causing devices to operate in their linear mode regions. NXP’s NextPower Live portfolio is designed specifically for such conditions, offering an unbeatable combination of low RDSon and improved safe operating area in a single device. More Current for Motor Control, Guaranteed Our automotive heritage has given us a detailed understanding of the unique demands of motor control applications. Thicker, double-bonded wires and excellent avalanche ratings are just some of the advantages of our NextPower Cordless range, which offers up to 150A maximum continuous drain current, a specification guaranteed by 100% production testing. 4 For the most up to date product information, please visit www.nxp.com/mosfets Featured Product: NextPowerS3 NextPowerS3 – Perfectly Balanced for DC:DC Switching Applications The Challenge Low RDSon MOSFETs typically need a big die. Low Qg(tot) MOSFETs typically need a small die. The challenge for manufacturers is to create optimised power MOSFETS that have both low RDSon and low Qg(tot) – welcome to NextPowerS3. The figure of Merit (FOM) of a MOSFET is calculated as the product of the RDSon and Qg(tot). A low FOM indicates good MOSFET performance in switching applications. RDSon matched Peak Efficiency Peak Higher RDSon NextPowerS3 NextPowerS3 Efficiency Typical Competitor Typical Competitor Load Current Comparing the performance of a NextPowerS3 MOSFET Load Current Using a NextPowerS3 MOSFET, with a higher RDSon than a with a competitor of similar RDSon typically shows an competitor device reduces the Qg(tot) still further, resulting in an efficiency performance advantage across the load range. improved peak efficiency. At higher loads, increased conduction Since conduction losses are the same for both devices, losses cancel out the switching advantages and the two parts show the advantage is more noticeable at lower loads where similar performance. switching losses contribute proportionally more. www.nxp.com/NextPowerS3 5 Featured Product: NextPowerS3 High Switching Frequencies Low Spiking Thermal Efficiency Typical Competitor Increasing switching frequency from 300KHz to 1MHz allows a 70 - 80% reduction in inductor size. NextPowerS3’s excellent switching performance enables such design choices with minimal loss of efficiency. Thanks to optimised output capacitance, body diode and channel structure, NextPowerS3 MOSFETs exhibit “soft-recovery” switching behaviour, resulting in lower voltage spikes, faster decays and virtually no gate glitches. Packaged in the copper-clip based LFPAK package, NextPowerS3 features excellent thermal performance. As RDSon rises with temperature, keeping MOSFETs cool helps efficiency as well as reliability. Low Leakage Specialist High Sides Improved Safe Operating Area Unique SchottkyPlus technology offers the benefits of an integrated Schottky diode without the leakage current problems. The NextPowerS3 portfolio contains devices with multiple busbars and low Rg optimised for use as Control FETs, further improving system efficiencies. A wide cell pitch makes NextPowerS3 an excellent choice for hot-swap, e-Fuse and power OR-ing applications. Package name (SOT1210) Type number [max] [V] RDSon[max] @ 10 V (mΩ) PSMN2R4-30MLD 30 2.4 3.2 70 16 PSMN4R2-30MLD 30 4.3 5.7 70 9.2 PSMN7R5-30MLD 30 7.6 10.3 57 5.8 PSMN0R9-30YLD 30 0.87 1.09 100 51 PSMN1R0-30YLD 30 1.02 1.3 100 38 PSMN1R2-30YLD 30 1.24 1.6 100 32 PSMN1R4-30YLD 30 1.42 1.85 100 27.6 PSMN2R4-30YLD 30 2.4 3.1 100 18 PSMN3R0-30YLD 30 3.1 4 100 14.5 PSMN4R0-30YLD 30 4 5.5 95 9.6 PSMN6R0-30YLD 30 6 8.35 66 6.7 PSMN6R1-30YLD 30 6 8.35 66 6.8 PSMN7R5-30YLD 30 7.5 10.2 51 5.8 PSMN1R0-40YLD 40 1.1 100 54 PSMN1R4-40YLD 40 1.4 100 45 Types in bold red represent new products 6 NextPowerS3 www.nxp.com/NextPowerS3 VDS RDSon[max] I [max] (A) QG(tot) @ VGS 4.5 V (mΩ) D [typ] (nC) Featured Product: NextPowerS3 – The Technology Typical Competitor The Importance of Cell Design The outstanding performance of NextPowerS3 is largely attributable to NXP’s unique “Super-junction” technology and optimisation of cell structures. Most low voltage MOSFET manufacturers use “Split Gate” technology to achieve low RDSon. NextPowerS3 uses a different approach to its cell design. The Drive for RDSon A MOSFET’s RDSon is given by the formula: RDSon = Rchannel + Rdrift + Rsubstrate + (Rpackage) Many manufacturers focus on reducing Rchannel to drive RDSon down. NXP’s Super-junction allows for an optimisation of all 3 components for reduction in RDSon, whilst also enhancing switching performance and Safe Operating Area. NextPowerS3 Maximising Switching Performance Switching losses result from the energy required to charge / discharge all the cell capacitances across the device. The total charge required is referred to as Qg(tot). The amount of charge with NextPowerS3, Qg(tot) is lower and switching losses are kept to a minimum. This is especially beneficial at peak efficiency and in higher frequency designs where the number of switching events is increased. SOA and Other Benefits When a device is operating in its linear mode, the channel current generates localised heating effects which can cause failure. NXP has optimised the cell structure to keep this heating effect under control. As a result, NextPowerS3 enjoys a particularly strong safe operating area (SOA), important in hot-swap, e-fuse and some power OR-ing designs. Reverse Recovery & Diode Leakage in SMPS www.nxp.com/quicklearning33 NextPowerS3 MOSFETs for DC/DC buck regulators www.nxp.com/quicklearning32 www.nxp.com/NextPowerS3 7 Featured product: NextPower Live NextPower Live! - MOSFETs for a non-stop world Reliable linear mode performance AND low RDSon efficiency in “hot-swap” and “soft-start” applications. Non-stop Applications 8 Non-stop Equipment } Cloud computing } Blade and rack servers } Network storage } Routers, switches & base stations } Communications infrastructure } RAID arrays } Industrial process control } Industrial PCs } Transaction processing } Programmable Logic Controllers (PLCs) } Traffic monitoring & signalling } CCTV digital video recorders } CCTV security } “Hot-swap” & “soft-start” systems www.nxp.com/nextpower-live Mobile phones, ATMs, the internet, traffic signals – so much of our daily life depends on 24/7/365 computers, communications, and storage, made possible by rack-based systems that can be maintained with the power on. NextPower Live MOSFETs are designed specifically for such applications: } When a replacement board is plugged into a live system, it is important that the in-rush current is carefully controlled, so as to protect the components on the board and ensure that other parts of the system experience no power disruption. This application requires MOSFETs with strong linear mode performance and a wide safe operating area (SOA) to manage current effectively and reliably. Once the replacement board is safely installed, the MOSFET is turned fully ON. In this mode of operation, a low RDSon is of primary importance, helping to keep temperatures low while maximizing system efficiency. } Only NextPower Live MOSFETs offer reliable linear mode performance AND low RDSon efficiency. } NextPower Live Portfolio Package D2PAK (SOT404) 30 V for 12 V supplies used in computing applications 100 V for 48 V supplies used in computing telecommunications PSMN1R5-30BLE PSMN3R4-30BLE PSMN4R8-100BSE PSMN7R6-100BSE PSMN4R8-100PSE PSMN7R8-100PSE TO220 LFPAK56 (Power-SO8) PSMN2R0-30YLE PSMN013-100YSE (specifically for PoE applications) LFPAK33 Power MOSFET operation in Linear Mode www.nxp.com/quicklearning34 PSMN040-100MSE PSMN075-100MSE MOSFETs for Power-over-Ethernet (PoE) PSE Applications www.nxp.com/quicklearning36 Next Power Live!, MOSFETs for HOT SWAP and Power over Ethernet www.nxp.com/quicklearning29 www.nxp.com/nextpower-live 9 Featured product: NextPower Cordless } Battery-powered tools, including everything from small engraving devices and screwdrivers to heavy-duty saws and agricultural tools, present a wide variety of requirements for driving the motor. The MOSFETs used in these systems have to perform at demanding levels and must have: } Low on-resistance for optimum battery life } Low thermal resistance for reduced junction temperature } High current capability (when the motor stalls, for example) } Choice of logic- and standard-level gate drives, depending on (for greater reliability) battery voltage } Excellent avalanche ruggedness to withstand high-load conditions } Environmental robustness (wide operating/storage temperatures, } harsh vibrations) High-current Competitive cost All source-bond wires In summary, the motor-control MOSFET needs to deliver automotive-grade performance at a commercially competitive price NXP has developed a range of MOSFETs specifically aimed at motor-control applications. These are based on our high reliability automotive-qualified silicon, plus specific package enhancements such as thicker wires and multiple bond points (“stitch bonding”) to spread the current evenly over the surface of the die. NXP’s long history in automotive MOSFETs means we have the know-how to produce devices with excellent avalanche ruggedness. The same expertise deployed in power steering and ABS systems worldwide is put to use in our devices for motor control and that means performance you can count on. Single Shot Avalanche Ruggedness www.nxp.com/quicklearning35 Max Current (ID[max]) depends largely on the number and diameter of the aluminium bond wires. The NXP Power Tools portfolio is typically based on a standard of three 500 μm wires, allowing for an ID[max] rating of up to 150 A in a TO220 package. NextPower Cordless MOSFETs for battery powered tools www.nxp.com/quicklearning28 10 For the most up to date product information, please visit www.nxp.com/nextpower-cordless RDSon[max] RDSon[max] @ V GS = 10 V (mΩ) @ V GS = 4.5 V (mΩ) ID [max] (A) EAS at rated current [mJ] Package Gate theshold 2.63 100 151 LFPAK56 Logic Level 2 3.5 100 370 LFPAK56 Logic Level 30 2.4 3.16 100 103 LFPAK56 Logic Level PSMN2R6-30YLC 30 2.8 3.65 100 50 LFPAK56 Logic Level PSMN1R9-40PL 40 1.7 1.94 150 1008 TO220 (SOT78) Logic Level PSMN2R1-40PL 40 2.2 2.6 150 622 TO220 (SOT78) Logic Level PSMN1R5-40PS 40 1.6 - 120 1400 TO220 (SOT78) Standard Level PSMN2R2-40PS 40 2.1 - 100 1240 TO220 (SOT78) Standard Level PSMN2R5-60PL 60 2.6 3.15 150 655 TO220 (SOT78) Logic Level PSMN2R6-60PS 60 2.9 - 150 519 TO220 (SOT78) Standard Level PSMN3R3-60PL 60 3.4 3.8 130 404 TO220 (SOT78) Logic Level PSMN3R9-60PS 60 3.9 - 130 372 TO220 (SOT78) Standard Level PSMN4R2-60PL 60 4.3 4.3 130 372 TO220 (SOT78) Logic Level PSMN7R6-60PS 60 7.8 - 92 110 TO220 (SOT78) Standard Level Device Name VDS(V) PSMN2R0-30YL 30 2 PSMN2R0-30YLE 30 PSMN2R5-30YL Heavy duty tools with large batteries require MOSFETs to withstand higher currents. NXP’s TO-220 NextPower Cordless devices will handle up to 150A. The high-reliability LFPAK56 is ideal for smaller tools and space-constrained applications. For the most up to date product information, please visit www.nxp.com/nextpower-cordless 11 Featured Packages LFPAK56 LFPAK56 - The Toughest Power-SO8 NXP’s LFPAK56 portfolio gives industry leading performance in a truly innovative package. 100% compatible with industry-standard Power-SO8 footprints, the LFPAK56’s exposed leads offer extra benefits in terms of reliability and options for wave soldering and automatic optical inspection. No wire bonds Copper clip - 100A ID max rating Wave-solderable High current transient robustness Flexible leads for improved reliability Low thermal resistance Exposed leads allow for easy optical inspection Ultra low package resistance 100% avalanche screened at high current for low PPM Power-SO8 footprint compatible 12 TELECOMMUNICATIONS CLOUD COMPUTING MOTOR CONTROL & NETWORKING & STORAGE } 3-phase BLDC } DC:DC } DC:DC } Robots } Synchronous Rectification } Point of Load } Power Tools } OR-ing } OR-ing } Medical } Hot-swap } Hot-swap } Vacuum Cleaners } Remote Control Vehicles } Drones For the most up to date product information, please visit www.nxp.com/mosfets Featured Packages LFPAK33 Shrinking the power footprint LFPAK33 - Tougher Just got Smaller With ever increasing pressure to reduce the size of modules whilst at the same time increasing the functionality, LFPAK33 provides the benchmark in a low-resistance small-footprint package. The LFPAK33 brings NXP’s robust and reliable copper clip technology to the DFN/QFN3333 footprint. Copper clip - 70A ID max rating Wire bond free - low inductance Low thermal resistance High current transient robustness Flexible leads for improved reliability Very low package resistance Exposed leads allow for Ultra compact footprint - 10.9mm2 easy optical inspection HIGH PERFORMANCE POWER SUPPLIES COMPUTING } Chargers PORTABLE & MOBILE } Laptops & Tablets } DC:DC } Power-over-Ethernet } DC:DC } Point of Load } Fast charging } Vcore } ASICs For the most up to date product information, please visit www.nxp.com/mosfets 13 Featured Packages I2PAK / TO-220 I2PAK / TO-220 - High performance through-hole products Providing industry leading performance for through hole products NXP’s I2PAK/TO-220 portfolio enables the separation of the electrical and thermal pathways to optimise module performance. The convenience of the tab for screw mounting on the TO-220 is complemented by industry standard footprint and excellent current handling performance. Similarly the I2PAK can be readily soldered down to form a low resistance path. Clamp or solder mounting Clamp or screw Advanced Silicon Technology } mounting Low resistance PbSnAg soldered die attach } High current transient robustness High mechanical reliability } o Pb-Free reflow 245 C Low thermal resistance Separated current from heat paths 100% avalanche screened at high current for low PPM POWER SUPPLIES 14 } SMPS } Slimline adaptors } PC Silverbox } Synchronous Rectification INDUSTRIAL POWER MOTOR CONTROL } Power Distribution Units } Power Tools (PDUs) } Garden Tools } Uninterruptible Power Supplies } Robots (UPS) } Fans For the most up to date product information, please visit www.nxp.com/mosfets Featured Packages D2PAK D2PAK - Premium performance SMD products The NXP D2PAK portfolio is ideally suited to hot-swap and heavy duty motor control applications. Combined with NXP’s inherently robust silicon, featuring a large safe operating area (SOA), our D2PAK devices deliver low on-state resistance and thermal performance within an industry standard footprint. Aluminium wirebonds • Multiple, heavy gauge • Low resistance • High current Solder die-attach • Low resistance • Thermally good • Reliable HOT-SWAP MOTOR CONTROL TELECOM POWER } Telecommunications racks } Light electric vehicles (LEV) } Telecommunications racks } Cloud Computing } Golf carts } Networking Equipment } Networking Equipment } Disability vehicles } Mass Storage For the most up to date product information, please visit www.nxp.com/mosfets 15 NXP PAK LFPAK56 soldering and footprint compatibility Although many manufacturers produce MOSFETs in Power-SO8 packages there is no generic JEDEC standard for PowerSO8 devices, and each device has a different PCB footprint. None of the manufacturers’ devices are guaranteed to be interchangeable with other devices. The following diagram shows that the package styles and recommended PCB footprints differ significantly from manufacturer to manufacturer. Fairchild Fairchild Power 56 Power 56 Vishay Vishay PowerPak PowerPak SO8 SO8 Infineon Super SO8 SuperSO8 NEC NEC HVSON-8 HVSON-8 ON Semi ON Semi DFN6 DFN6 STM STM PowerFlat PowerFlat6x5 6x5 NXP NXP LFPAK LFPAK Each variant may require a different solder-resist, solder-stencil and machine programming unless careful consideration has been made in advance to design a universal footprint which will allow multiple devices to be fitted to the PCB. The following diagram shows each manufacturer’s original footprint with their Power-SO8 mounted on it. Fairchild Power 56 Vishay PowerPak SO8 Super SO8 NEC HVSON-8 ON Semi DFN6 STM PowerFlat Renesas LFPAK NXP’s LFPAK56 package has been designed to achieve electrical and mechanical compatibility with all these Power-SO8 types. The diagram below shows each manufacturers footprint with an LFPAK56 mounted. This shows how it is possible to fit an LFPAK56 packaged product instead of a competitor device. LFPAK56 on Fairchild Footprint LFPAK56 on Vishay Footprint LFPAK56 on Footprint LFPAK56 on Renesas Footprint LFPAK56 on On-Semi Footprint LFPAK56 on FST Footprint Comprehensive study reports are available on request for LFPAK56 and LFPAK33 packages demonstrating compatibility with competitor footprints. 16 For the most up to date product information, please visit www.nxp.com/mosfets LFPAK56 on Renesas LFPAK Footprint For the most up to date product information, please visit www.nxp.com/mosfets 17 LFPAK33 soldering and footprint compatibility 3.3 x 3.3 mm PCB footprints with package mounted Through careful design of the PCB footprint, it is possible to design a universal footprint, such as the one shown below, that meets the requirements of various 3.3 x 3.3 package manufacturers. This universal footprint example shows the solder resist and solder stencil details that allow a PCB designer to create a footprint compatible with the majority of 3.3 x 3.3 package types. NXP LFPAK33 AOS DFN3.3x3.3 EMC EDFN 3x3 Fairchild MLP08S Fairchild PQFN08B TSDSON-8 On Semi Micro8 Leadless Vishay PowerPak 1212-8 An independent study has been performed by Norcott Technologies (www.norcott.co.uk) to check compatibility: Placement of competitors on NXP universal SOT1210 footprint Placement of SOT1210 package on competitor footprints The conclusion of the study is that LFPAK33 is compatible in both scenarios above. The report is available upon request. 18 For the most up to date product information, please visit www.nxp.com/mosfets LFPAK33 soldering and footprint compatibility NXP LFPAK33 on competitors’ 3.3 x 3.3 package footprints NXP AOS Fairchild EMC Fairchild On Semi Vishay Competitors’ 3.3 x 3.3 package on NXP LFPAK33 footprint NXP LFPAK33 AOS DFN3.3x3.3 Fairchild PQFN08B TSDSON-8 EMC EDFN 3x3 Fairchild MLP08S On Semi Vishay Micro8 Leadless PowerPak 1212-8 For the most up to date product information, please visit www.nxp.com/mosfets 19 LFPAK33 universal footprint design The LFPAK33 footprint allows for one PCB design to accommodate: NXP - LFPAK33 (SOT1210) NXP - DFN3333-8 (SOT873) Fairchild - MLP 3.3x3.3 Vishay - POWERPAK® 1212-8 Infineon - PG-TSDSON-8 3.3x3.3 ON SEMI - WDFN8 3.3x3.3 STM - POWERFlat® 3.3x3.3 IR - PQFN 3x3 2.35 2.25 0.635 0.617 0.05 (all around) 0.75 0.62 1.05 1.91 2.47 0.51 3.9 0.51 0.6 0.83 0.4 (x8) 20 solder land solder paste aperture occupied area solder resist 0.3 (x8) 0.65 (x6) 0.25 (x6) Notes : 1. Dimensions in mm 2. Stencil Thickness - 125 μm For the most up to date product information, please visit www.nxp.com/mosfets 4 Steps to select a Power MOSFET 1 Select a Voltage, e.g. 40 V 2 Select a package, e.g. LFPAK56 3 Choose an RDSon from our extensive range 4 Select a type and visit www.nxp.com/mosfets to download datasheets, models and order samples PSMN Part Numbering Segment: • P ower Silicon Max Channel: Technology Family • C = NextPower • D = NextPowerS3 • E = NextPower Live Package type • N = N-channel • B = D2PAK • D = DPAK RDSon in mΩ: • E = I2PAK • 4 R0 means 4mΩ max at 25C • K = SO8 Voltage Rating: • BVDSS rating • L = QFN3333 • P = TO220 • Y = LFPAK56 Gate threshold voltage • L = Logic Level • S = Standard Level • X = TO220F (FULLPACK) • M = LFPAK33 • N = QFN2020 For the most up to date product information, please visit www.nxp.com/mosfets 21 High Performance Power MOSFETs MOSFET Package Selection Through Hole Surface Mount TO220 LFPAK56 } Industry standard } Power SO8 } up to 150A } up to 100A TO220F LFPAK33 } Industry standard } QFN/DFN3333 } up to 75A compatible } up to 70A 22 I2PAK D2PAK } Industry standard } Industry standard } up to 120 A } up to 120A For the most up to date product information, please visit www.nxp.com/mosfets 20 V - 25 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) PHB66NQ03LT 25 10.5 PMZ250UN 20 PMZ270XN 20 PMZ290UN VDS RDSon[max] @ VGS 4.5 V (mΩ) ID [max] (A) QG(tot) [typ] (nC) 66 12 300 2.28 0.89 340 2.15 0.72 20 350 1 0.89 PMZB290UN 20 350 1 0.89 PMZB290UNE 20 380 1 0.45 PMZB300XN 20 380 1 0.72 PMDXB600UNE 20 620 0.6 0.4 20 54 3.2 5.7 PMDPB30XN 20 40 5.3 14.4 PMPB10XNE 20 14 12.9 23 PMPB15XN 20 21 10.4 13.4 PMPB23XNE 20 22 10.1 11.6 PHD38N02LT 20 44.7 15.1 PHD97NQ03LT 25 PSMN2R8-25MLC PSMN3R9-25MLC Type number PMXB43UNE 6.3 10.6 75 11.7 25 2.8 3.75 70 16.3 25 4.15 5.55 70 9.7 PSMN9R0-25MLC 25 8.65 11.3 55 5.4 PH3120L 20 2.65 3.7 100 48.5 PH2520U 20 2.7 100 78 PSMN0R9-25YLC 25 0.99 1.25 100 51 PSMN1R1-25YLC 25 1.15 1.5 100 39 PSMN1R2-25YL 25 1.2 1.85 100 50.6 PSMN1R2-25YLC 25 1.3 1.7 100 31 PSMN1R5-25YL 25 1.5 2.2 100 36 PSMN2R2-25YLC 25 2.4 3.15 100 18 PSMN2R9-25YLC 25 3.15 4.1 100 16 PSMN4R0-25YLC 25 4.5 5.8 84 10.9 PSMN6R0-25YLB 25 6.1 7.9 73 9 PSMN6R5-25YLC 25 6.5 8.5 64 8.4 PH2925U 25 3 100 92 For the most up to date product information, please visit www.nxp.com/mosfets 23 20 V - 25 V N-channel MOSFETs Package name 24 [max] [V] RDSon[max] @ VGS 4.5 V (mΩ) ID [max] (A) QG(tot) [typ] (nC) PMF280UN 20 340 1.02 0.45 PMR290UNE 20 380 0.7 15.3 PHKD6N02LT 20 10.9 32 PSMN006-20K 20 5 32 PMDT290UNE 20 380 0.8 0.45 BSH105 20 200 1.05 3.9 PMV31XN 20 37 5.9 5.8 SI2302DS 20 85 2.5 5.4 PMGD280UN 20 340 0.87 0.89 PMGD290XN 20 350 0.86 0.72 Type number VDS For the most up to date product information, please visit www.nxp.com/mosfets 30 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) RDSon[max] @ VGS 4.5 V (mΩ) PSMNR90-30BL 30 1 1.4 120 118 PSMN1R5-30BLE 30 1.5 1.85 120 228 PSMN1R8-30BL 30 1.8 2.1 100 83 PSMN1R6-30BL 30 1.9 2.2 100 101 PSMN2R0-30BL 30 2.1 2.9 100 55 PSMN2R7-30BL 30 3 3.7 100 32 PSMN3R4-30BL 30 3.3 3.8 100 31 PSMN3R4-30BLE 30 3.4 5 120 81 PSMN4R3-30BL 30 4.1 5.2 100 19 PSMN017-30BL 30 17 23.3 32 5.1 PSMN022-30BL 30 22.6 29.6 30 4.4 PMZ1000UN 30 1000 0.48 0.89 PMZ350XN 30 420 1.87 0.65 PMZ390UN 30 460 1.78 0.89 NX3008NBKMB 30 1400 0.53 0.52 PMZB370UNE 30 490 0.9 0.77 PMZB380XN 30 460 0.93 0.65 PMZB420UN 30 490 0.9 0.75 PMXB56EN 30 55 65 3.2 3.6 PMXB65ENE 30 67 3.2 6 PMPB11EN 30 14.5 16.5 13 13.7 NX2020N2 30 19.5 24.5 10.4 7.2 PMPB20EN 30 19.5 24.5 10.4 7.2 PMPB13XNE 30 16 11.3 24 PMPB29XNE 30 33 5 12.4 PMPB33XN 30 47 5.5 5.1 PHD101NQ03LT 30 5.5 75 23 PHD71NQ03LT 30 10 75 13.2 PSMN1R1-30EL 30 1.3 1.6 120 118 PSMN017-30EL 30 17 23.4 32 5.1 PSMN2R4-30MLD 30 2.4 3.2 70 16 PSMN2R9-30MLC 30 2.95 3.8 70 16.7 PSMN3R0-30MLC 30 3.15 4.05 70 16.1 PSMN4R2-30MLD 30 4.3 5.7 70 9.2 PSMN4R4-30MLC 30 4.65 6 70 10.6 PSMN7R0-30MLC 30 7 9 67 8.2 Type number VDS ID [max] (A) QG(tot) [typ] (nC) Types in bold red represent new products For the most up to date product information, please visit www.nxp.com/mosfets 25 30 V N-channel MOSFETs Package name Type number VDS [max] [V] RDSon[max] @ 10 V (mΩ) ID [max] (A) QG(tot) [typ] (nC) PSMN7R5-30MLD 30 7.6 10.3 57 5.8 PSMN9R8-30MLC 30 9.8 12.4 50 5 PSMN013-30MLC 30 13.6 16.9 39 3.7 PSMN020-30MLC 30 18.1 27 31.8 4.6 PSMN0R9-30YLD 30 0.87 1.09 100 51 PSMN1R0-30YLD 30 1.02 1.3 100 38 PSMN1R0-30YLC 30 1.15 1.4 100 50 PSMN1R2-30YLD 30 1.24 1.6 100 32 PSMN1R2-30YLC 30 1.25 1.65 100 38 PSMN1R3-30YL 30 1.3 1.95 100 46.6 PSMN1R4-30YLD 30 1.42 1.85 100 27.6 PSMN1R5-30YL 30 1.5 1.9 100 36.2 PSMN1R5-30YLC 30 1.55 2.05 100 30 PSMN1R7-30YL 30 1.7 2.1 100 36.2 PSMN2R0-30YL 30 2 2.63 100 30 PSMN2R0-30YLE 30 2 3.5 100 87 PSMN2R2-30YLC 30 2.15 2.8 100 26 PSMN2R4-30YLD 30 2.4 3.1 100 18 PSMN2R5-30YL 30 2.4 3.16 100 27 PSMN2R6-30YLC 30 2.8 3.65 100 18 PSMN3R0-30YL 30 3 4.04 100 21 PSMN3R0-30YLD 30 3.1 4 100 14.5 PSMN4R0-30YL 30 4 5.25 100 17.6 PSMN4R0-30YLD 30 4 5.5 95 9.6 PSMN4R1-30YLC 30 4.35 5.7 92 11 PSMN5R0-30YL 30 5 6.7 91 14.1 PSMN6R0-30YL 30 6 7.87 79 11 PSMN6R0-30YLD 30 6 8.35 66 6.7 PSMN6R1-30YLD 30 6 8.35 66 6.8 PSMN6R0-30YLB 30 6.5 8.1 71 9 PSMN7R0-30YL 30 7 9.1 76 10 PSMN7R0-30YLC 30 7.1 8.9 61 7.9 PSMN7R5-30YLD 30 7.5 10.2 51 5.8 PSMN9R1-30YL 30 9.1 13.6 57 8.4 PSMN9R5-30YLC 30 9.8 12.1 44 5 PSMN013-30YLC 30 13.6 16.9 32 4 Types in bold red represent new products 26 RDSon[max] @ VGS 4.5 V (mΩ) For the most up to date product information, please visit www.nxp.com/mosfets 30 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) RDSon[max] @ VGS 4.5 V (mΩ) ID [max] (A) QG(tot) [typ] (nC) NX3020NAKW 30 4500 5200 0.18 0.34 NX3008NBKW 30 1400 0.35 0.52 PMF370XN 30 440 0.87 0.65 BSP030 30 30 10 24 BSP100 30 100 200 6 6 NX3020NAKT 30 4500 5200 0.18 0.34 PHK31NQ03LT 30 4.4 5.6 30.4 33 PSMN005-30K 30 5.5 8 PHK18NQ03LT 30 8.9 12.5 20.3 10.6 PHK13N03LT 30 20 26 13.8 10.7 PHKD13N03LT 30 20 26 10.4 10.7 PHN203 30 30 55 6.3 14.6 PHN210T 30 100 200 3.4 6 PHC21025 30 250 400 PHK12NQ03LT 30 NX3020NAKV 30 NX3008NBKV 30 PSMN1R1-30PL 30 PSMN1R6-30PL Type number VDS 34 10 14 11.8 5200 0.2 0.34 1400 0.4 0.52 1.3 1.6 120 118 30 1.7 2.1 100 101 PSMN1R8-30PL 30 1.8 2.3 100 83 PSMN2R0-30PL 30 2.1 2.8 100 55 PSMN2R7-30PL 30 2.7 3.6 100 32 PSMN3R4-30PL 30 3.4 4.1 100 31 PSMN4R3-30PL 30 4.3 6.2 100 19 PHP36N03LT 30 17 22 43.4 18.5 PSMN017-30PL 30 17 23.4 32 5.1 PSMN022-30PL 30 22 34 30 4.4 SI2304DS 30 117 190 1.7 4.6 BSH108 30 120 1.9 6.4 NX3020NAK 30 4500 0.2 0.34 BSH103 30 400 NX3008NBK 30 1400 0.4 0.52 NX3020NAKS 30 5200 0.18 0.34 NX3008NBKS 30 1400 0.35 0.52 PMGD370XN 30 440 0.74 0.65 4500 4500 5200 2.1 For the most up to date product information, please visit www.nxp.com/mosfets 27 40 V - 50 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) ID [max] (A) QG(tot) [typ] (nC) PSMN1R1-40BS 40 1.3 120 136 PSMN2R2-40BS 40 2.2 100 130 PSMN2R8-40BS 40 2.9 100 71 PSMN4R5-40BS 40 4.5 100 35 PSMN8R0-40BS 40 7.6 77 21 PSMN1R5-40ES 40 1.6 120 136 PSMN1R0-40YLD 40 1.1 100 54 PSMN1R4-40YLD 40 1.4 100 45 PSMN1R6-40YLC 40 1.55 100 59 PSMN1R8-40YLC 40 1.8 100 45 PSMN2R6-40YS 40 2.8 100 63 PSMN3R3-40YS 40 3.3 100 49 PH4840S 40 4.1 94.5 67 PSMN4R0-40YS 40 4.2 100 38 PSMN5R8-40YS 40 5.7 90 28.8 PSMN8R3-40YS 40 8.6 70 20 PSMN014-40YS 40 14 46 12 PSMN1R5-40PS 40 1.6 150 136 PSMN1R9-40PL 40 1.7 150 230 PSMN2R2-40PS 40 2.1 100 110 PSMN2R1-40PL 40 2.2 150 168.9 PSMN2R8-40PS 40 2.8 100 71 PSMN4R5-40PS 40 4.6 100 35 PSMN8R0-40PS 40 7.6 77 17 PMV130ENEA 40 120 2.1 2.4 BSN20 50 15000 0.173 Type number VDS Types in bold red represent new products 28 For the most up to date product information, please visit www.nxp.com/mosfets 55 V - 60 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) ID [max] (A) QG(tot) [typ] (nC) PHB191NQ06LT 55 3.7 75 95.6 PHB21N06LT 55 70 19 PHB20N06T 55 75 20.3 11 PSMN1R7-60BS 60 2 120 137 PSMN3R0-60BS 60 3.2 100 130 PSMN004-60B 60 3.6 75 168 PSMN4R6-60BS 60 4.4 100 70.8 PSMN7R6-60BS 60 7.8 92 38.7 PSMN015-60BS 60 14.8 50 20.9 PHB32N06LT 60 37 34 17 PMZ760SN 60 900 1.22 1.05 2N7002BKM 60 1600 0.45 0.5 PMZB790SN 60 940 0.65 1.05 2N7002BKMB 60 1600 0.45 0.5 PMPB40SNA 60 43 12.9 12.1 PMPB85ENEA 60 95 4.4 6.2 PHD20N06T 55 77 18 11 PSMN2R0-60ES 60 2.2 120 137 PSMN3R0-60ES 60 3 100 130 PSMN011-60ML 60 11.3 61 37.2 PSMN011-60MS 60 11.3 61 23 PH955L 55 8.3 62.5 42 PSMN5R5-60YS 60 5.2 100 56 PSMN7R0-60YS 60 6.4 89 45 PSMN8R5-60YS 60 8 76 39 PSMN012-60YS 60 11.1 59 28.4 PSMN017-60YS 60 15.7 44 20 PSMN030-60YS 60 24.7 29 13 BSH121 55 0.3 1 2N7002BKW 60 1600 0.31 0.5 BSS138BKW 60 1600 0.32 0.6 BSS138PW 60 1600 0.32 0.72 NX7002AKW 60 4500 0.17 0.33 Type number VDS Types in bold red represent new products For the most up to date product information, please visit www.nxp.com/mosfets 29 55 V - 60 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) ID [max] (A) PHT6N06T 55 150 5.5 PHT6N06LT 55 5.5 4.5 PHT8N06LT 55 7.5 11.2 2N7002BKT 60 1600 0.29 0.5 2N7002BKV 60 1600 0.34 0.5 PHP191NQ06LT 55 3.7 75 95.6 PHP20N06T 55 75 20.3 11 PSMN2R0-60PS 60 2.2 120 137 PSMN2R5-60PL 60 2.6 150 223 PSMN2R6-60PS 60 2.6 150 140 PSMN3R0-60PS 60 3 100 130 PSMN3R3-60PL 60 3.4 130 175 PSMN3R9-60PS 60 3.9 130 103 PSMN4R2-60PL 60 3.9 130 151 PSMN4R6-60PS 60 4.6 100 70.8 PSMN7R6-60PS 60 7.8 92 38.7 PSMN015-60PS 60 14.8 50 20.9 PSMN3R9-60XS 60 4 75 103 BSH111 55 0.335 1 2N7002BK 60 1600 0.35 0.5 2N7002CK 60 1600 0.3 1.09 BSS138BK 60 1600 0.36 0.6 BSS138P 60 1600 0.36 0.72 BSS138AKA 60 4500 0.2 0.39 NX7002AK 60 4500 0.3 0.33 2N7002 60 5000 0.3 PMGD780SN 60 920 0.49 1.05 2N7002BKS 60 1600 0.3 0.5 BSS138BKS 60 1600 0.32 0.6 BSS138PS 60 1600 0.32 0.72 NX7002AKS 60 4500 0.17 0.33 Type number VDS Types in bold red represent new products 30 For the most up to date product information, please visit www.nxp.com/mosfets QG(tot) [typ] (nC) 75 V - 80 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) PSMN005-75B 75 5 75 165 PSMN008-75B 75 8.5 75 122.8 PHB110NQ08T 75 9 75 113.1 PHB29N08T 75 27 19 PSMN2R8-80BS 80 3 120 139 PSMN3R3-80BS 80 3.5 120 111 PSMN4R4-80BS 80 4.5 100 125 PSMN5R0-80BS 80 5.1 100 101 PSMN6R5-80BS 80 6.9 100 71 PSMN8R7-80BS 80 8.7 90 52 PSMN012-80BS 80 11 74 36 PSMN017-80BS 80 17 50 26 PSMN050-80BS 80 46 22 11 PMXB360ENEA 80 450 1.1 3 PMPB95ENEA 80 105 4.1 9.9 PMPB215ENEA 80 230 2.8 4.8 PSMN3R3-80ES 80 3.3 120 139 PSMN3R5-80ES 80 3.5 120 139 PSMN4R3-80ES 80 4.3 120 111 PSMN8R2-80YS 80 8.5 82 55 PSMN011-80YS 80 11 67 45 PSMN013-80YS 80 12.9 60 37 PSMN018-80YS 80 18 45 26 PSMN026-80YS 80 27.5 34 20 PSMN041-80YL 80 41 25 21.9 PSMN045-80YS 80 45 24 12.5 PSMN005-75P 75 5 75 165 PHP79NQ08LT 75 16 73 30 PHP29N08T 75 27 19 PSMN3R3-80PS 80 3.3 120 139 PSMN3R5-80PS 80 3.5 120 139 PSMN4R4-80PS 80 4.1 100 112 PSMN4R3-80PS 80 4.3 120 111 PSMN5R0-80PS 80 4.7 100 87 PSMN6R5-80PS 80 6.9 100 71 PSMN8R7-80PS 80 8.7 90 52 PSMN012-80PS 80 11 74 36 PSMN017-80PS 80 17 50 26 Type number VDS ID [max] (A) QG(tot) [typ] (nC) For the most up to date product information, please visit www.nxp.com/mosfets 31 100 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) ID [max] (A) QG(tot) [typ] (nC) PSMN3R8-100BS 100 3.9 120 170 PSMN4R8-100BSE 100 4.8 120 196 PSMN5R6-100BS 100 5.6 100 141 PSMN7R0-100BS 100 6.8 100 125 PSMN7R6-100BSE 100 7.6 75 128 PSMN009-100B 100 8.8 75 156 PSMN9R5-100BS 100 9.6 89 82 PSMN013-100BS 100 13.9 68 59 PSMN015-100B 100 15 75 90 PSMN016-100BS 100 16 57 49 PHB45NQ10T 100 25 47 61 PSMN027-100BS 100 26.8 37 30 PHB47NQ10T 100 28 47 66 PSMN034-100BS 100 34.5 32 23.8 PHB27NQ10T 100 50 28 30 PHB18NQ10T 100 90 18 21 PMDPB760EN 100 860 0.9 2.4 PMPB200EN 100 235 2.6 7.4 PSMN025-100D 100 25 47 61 PSMN4R3-100ES 100 4.3 120 170 PSMN5R0-100ES 100 5 120 170 PSMN7R0-100ES 100 6.8 100 125 PSMN8R5-100ES 100 8.5 100 111 PSMN013-100ES 100 13.9 68 59 PSMN040-100MSE 100 36.6 30 30 PSMN075-100MSE 100 71 18 16.4 PSMN012-100YS 100 12 60 64 PSMN013-100YSE 100 13 82 75 PSMN016-100YS 100 16.3 51 54 PSMN020-100YS 100 20.5 43 41 PH20100S 100 23 34.3 39 PSMN028-100YS 100 27.5 42 33 PSMN038-100YL 100 37.5 30 21.6 PSMN039-100YS 100 39.5 28.1 23 PSMN069-100YS 100 72.4 17 14 Type number VDS Types in bold red represent new products - Types in bold green represent products in development 32 For the most up to date product information, please visit www.nxp.com/mosfets 100 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) PHT6NQ10T 100 90 6.5 21 PHT4NQ10T 100 250 3.5 7.4 BSP110 100 0.52 PHT4NQ10LT 100 3.5 PSMN038-100K 100 38 PHKD3NQ10T 100 90 3 21 PSMN4R3-100PS 100 4.3 120 170 PSMN4R8-100PSE 100 5 120 196 PSMN5R0-100PS 100 5 120 170 PSMN5R6-100PS 100 5.6 100 141 PSMN7R0-100PS 100 6.8 100 125 PSMN7R8-100PSE 100 7.8 75 128 PSMN8R5-100PS 100 8.5 100 111 PSMN009-100P 100 8.8 75 156 PSMN9R5-100PS 100 9.6 89 82 PSMN013-100PS 100 13.9 68 59 PSMN015-100P 100 15 75 90 PSMN016-100PS 100 16 57 49 PHP45NQ10T 100 25 47 61 PSMN027-100PS 100 26.8 37 30 PSMN034-100PS 100 34.5 32 23.8 PHP18NQ10T 100 90 18 21 PSMN4R6-100XS 100 4.6 70.4 153 PSMN5R0-100XS 100 5 67.5 153 PSMN5R6-100XS 100 5.6 61.8 145 PSMN7R0-100XS 100 6.8 55 121 PSMN8R5-100XS 100 8.5 49 100 PSMN9R5-100XS 100 9.6 44.2 81.5 PSMN013-100XS 100 13.9 35.2 57.5 PSMN016-100XS 100 16 32.1 46.2 PSMN027-100XS 100 26.8 23.4 30 PMV213SN 100 250 1.9 7 BSH114 100 500 0.85 4.6 BSS123 100 6000 0.15 BST82 100 Type number VDS ID [max] (A) QG(tot) [typ] (nC) 6.8 43 0.19 Types in bold red represent new products - Types in bold green represent products in development For the most up to date product information, please visit www.nxp.com/mosfets 33 105 V - 150 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) PSMN030-150B 150 30 55.5 98 PSMN035-150B 150 35 50 79 PHB45NQ15T 150 42 45.1 32 PSMN063-150D 150 63 29 55 PSMN6R3-120ES 120 6.7 70 207.1 PSMN7R8-120ES 120 7.9 70 167 PSMN059-150Y 150 59 43 27.9 PHK5NQ15T 150 75 5 29 PSMN085-150K 150 85 PHP45NQ11T 105 25 47 60 PSMN015-110P 110 15 75 90 PHP27NQ11T 110 50 27.6 30 PHP23NQ11T 110 70 23 22 PHP18NQ11T 110 90 18 21 PSMN6R3-120PS 120 6.7 70 207.1 PSMN7R8-120PS 120 7.9 70 167 PSMN030-150P 150 30 55.5 98 PSMN035-150P 150 35 50 79 PHP30NQ15T 150 63 29 55 PHP28NQ15T 150 65 28.5 24 Type number VDS Types in bold red represent new products 34 For the most up to date product information, please visit www.nxp.com/mosfets ID [max] (A) QG(tot) [typ] (nC) 40 200 V - 300 V N-channel MOSFETs Package name [max] [V] RDSon[max] @ 10 V (mΩ) PSMN057-200B 200 57 39 96 PSMN070-200B 200 70 35 77 PHB33NQ20T 200 77 32.7 32.2 PHB20NQ20T 200 130 20 65 PML260SN 200 294 8.8 13.3 PML340SN 220 386 7.3 13.2 PSMN130-200D 200 130 20 65 PHD9NQ20T 200 400 8.7 24 PSMN102-200Y 200 102 21.5 30.7 BSP122 200 2500 0.55 BSP89 240 5000 0.375 BSP126 250 5000 0.375 BSP130 300 6000 0.35 PSMN165-200K 200 165 40 PHC2300 300 6000 6.24 BSS87 200 3000 0.4 PSMN057-200P 200 57 39 96 PSMN070-200P 200 70 35 77 PHP33NQ20T 200 77 32.7 32.2 PHP20NQ20T 200 130 20 65 PHP9NQ20T 200 400 8.7 24 Type number VDS ID [max] (A) QG(tot) [typ] (nC) For the most up to date product information, please visit www.nxp.com/mosfets 35 P-channel MOSFETs Package name Type number Channel No. of type transistors [max] [V] RDSon[max] @ 10 V (mΩ) VDS BSS84AKM P 1 -50 7500 -0.23 0.26 BSS84AKMB P 1 -50 7500 -0.23 0.26 NX3008PBKMB P 1 -30 4100 -0.3 0.55 PMZB350UPE P 1 -20 450 -1.4 1.3 PMZB670UPE P 1 -20 850 -0.68 0.76 PMCXB900UE N/P 2 -20 1400 0.6 0.4 PMDXB950UPE P 2 -20 1400 -0.5 1.19 PMXB120EPE P 1 -30 170 -2.4 6.2 PMXB350UPE P 1 -20 447 -1.2 1.25 PMXB75UPE P 1 -20 85 -2.9 6.8 PMXB65UPE P 1 -12 72 -3.2 6.7 PMDPB70XP P 2 -30 87 -3.8 5.2 PMCPB5530X N/P 2 -20 34 5.3 14.4 PMDPB55XP P 2 -20 70 -4.5 16.5 PMDPB58UPE P 2 -20 67 -4.5 6.3 PMDPB70XPE P 2 -20 79 -4.2 5 PMDPB80XP P 2 -20 102 -3.7 5.7 PMDPB85UPE P 2 -20 103 -3.7 5.4 PMPB27EP P 1 -30 29 43 -8.8 30 PMPB48EP P 1 -30 50 76 -6.8 17 NX2020P1 P 1 -30 58 -5 14 PMPB47XP P 1 -30 58 -5 14 PMPB19XP P 1 -20 22.5 -10.3 28.8 PMPB20XPE P 1 -20 23.5 -10.3 30 PMPB29XPE P 1 -20 32.5 -5 30 PMPB33XP P 1 -20 37 -7.9 15 PMPB43XPE P 1 -20 48 -5 15.6 PMPB15XP P 1 -12 19 -11.8 67 BSS84AKW P 1 -50 -0.15 0.26 NX3008PBKW P 1 -30 4100 -0.2 0.55 PMF170XP P 1 -20 200 -1 2.6 BSP230 P 1 -300 17000 BSP225 P 1 -250 15000 -0.225 BSP220 P 1 -200 12000 -0.225 BSP250 P 1 -30 250 Types in bold green represent products in development 36 RDSon[max] I [max] (A) QG(tot) @ VGS 4.5 V (mΩ) D [typ] (nC) For the most up to date product information, please visit www.nxp.com/mosfets 120 7500 400 P-channel MOSFETs Package name (SOT416) Type number Channel No. of type transistors VDS [max] [V] PMR670UPE P 1 -20 PMK30EP P 1 -30 PMK35EP P 1 PHP225 P PMK50XP RDSon[max] @ 10 V (mΩ) RDSon[max] I [max] (A) QG(tot) @ VGS 4.5 V (mΩ) D [typ] (nC) 850 -0.48 0.76 19 30 -14.9 50 -30 19 35 -14.9 42 2 -30 250 400 P 1 -20 50 -7.9 10 PHK04P02T P 1 -16 120 -4.66 7.2 PHC21025 N/P 2 30 250 PHC2300 N/P 2 300 6000 NX1029X N/P 2 -50 1600 0.33 0.26 BSS84AKV P 2 -50 7500 -0.17 0.26 NX3008CBKV N/P 2 -30 1400 0.4 0.52 NX3008PBKV P 2 -30 4100 -0.22 0.55 PMDT290UCE N/P 2 -20 380 0.8 0.45 PMDT670UPE P 2 -20 850 -0.55 0.76 BSS192 P 1 -240 12000 -0.2 BSH201 P 1 -60 2500 -0.3 BSS84AK P 1 -50 7500 -0.18 0.26 PMV250EPEA P 1 -40 240 -1.5 4.7 BSH202 P 1 -30 900 BSH203 P 1 -30 900 -0.47 2.2 NX3008PBK P 1 -30 4100 -0.23 0.55 NX2301P P 1 -20 120 -2 4.5 PMV160UP P 1 -20 210 -1.2 3.3 PMV32UP P 1 -20 36 -4 15.5 PMV33UPE P 1 -20 36 -5.3 14.7 PMV48XP P 1 -20 55 -3.5 8.5 PMV48XPA P 1 -20 55 -3.5 8.5 PMV50UPE P 1 -20 66 -3.7 10.5 PMV65XP P 1 -20 74 -4.3 7.7 PMV65XPE P 1 -20 78 -3.3 5 PMV75UP P 1 -20 102 -3.2 5 BSH205 P 1 -12 10 400 10 6.24 300 -0.52 -0.75 For the most up to date product information, please visit www.nxp.com/mosfets 37 P-channel MOSFETs Package name Type number VDS [max] [V] RDSon[max] @ 10 V (mΩ) RDSon RDSon [max] [max] I [max] (A) QG(tot) @ VGS 4.5 V (mΩ) D [typ] (nC) PMN27UP P 1 -20 32 -5.7 21 PMN27XPE P 1 -20 30 -5.7 15 PMN34UP P 1 -20 40 -5 15.5 PMN40UPE P 1 -20 43 -6 15.6 PMN42XPE P 1 -20 46 -5.7 11.5 PMN48XP P 1 -20 55 -4.1 8.7 PMN50UPE P 1 -20 66 -4 10.5 PMN70XPE P 1 -20 85 -4.1 5.2 PMN80XP P 1 -20 102 -3.2 5 BSS84AKS P 2 -50 -0.16 0.26 NX3008CBKS N/P 2 -30 1400 0.35 0.52 NX3008PBKS P 2 -30 4100 -0.2 0.55 PMG85XP P 1 -20 115 -2 4.8 N/P 2 -20 380 0.725 0.45 PMGD290UCEA 38 Channel No. of type transistors For the most up to date product information, please visit www.nxp.com/mosfets 7500 Multi-chip MOSFETs Package name Type number VDS [max] [V] RDSon[max] @ 10 V (mΩ) RDSon[max] @ VGS 4.5 V (mΩ) PMCXB900UE -20 1400 PMDXB950UPE -20 1400 PMDXB600UNE 20 620 PMDPB70XP -30 87 PMCPB5530X -20 34 PMDPB55XP -20 70 PMDPB58UPE -20 67 PMDPB70XPE -20 79 PMDPB80XP -20 102 PMDPB85UPE -20 103 PMDPB30XN 20 40 PMDPB760EN 100 860 920 PHP225 -30 250 400 PHKD6N02LT 20 PHKD13N03LT 30 20 26 PHN203 30 30 55 PHN210T 30 100 200 PHC21025 30 250 400 PHKD3NQ10T 100 90 PHC2300 300 6000 Types in bold green represent products in development For the most up to date product information, please visit www.nxp.com/mosfets 39 Multi-chip MOSFETs Package name 40 [max] [V] RDSon[max] @ 10 V (mΩ) NX1029X -50 1600 BSS84AKV -50 7500 NX3008CBKV -30 1400 NX3008PBKV -30 4100 PMDT290UCE -20 380 PMDT670UPE -20 850 PMDT290UNE 20 380 NX3020NAKV 30 NX3008NBKV 30 2N7002BKV 60 1600 BSS84AKS -50 7500 NX3008CBKS -30 1400 NX3008PBKS -30 4100 PMGD290UCEA -20 380 PMGD290XN 20 350 NX3020NAKS 30 NX3008NBKS 30 1400 PMGD370XN 30 440 PMGD780SN 60 920 2N7002BKS 60 1600 BSS138BKS 60 1600 BSS138PS 60 1600 NX7002AKS 60 4500 Type number VDS 4500 RDSon[max] @ VGS 4.5 V (mΩ) 5200 1400 4500 For the most up to date product information, please visit www.nxp.com/mosfets 5200 1400 2200 Automotive Power MOSFETs Global Leadership in Discrete Power MOSFETs for Automotive Applications In today’s demanding automotive marketplace only the best will do. Semiconductor components play an increasingly important role in a vehicle’s performance, comfort and reliability. Only suppliers with specialist knowledge and experience can provide the solutions needed to meet the current & future demands of automotive electronics modules and systems. In the area of power MOSFETs for automotive applications NXP is a clear leader with a dedicated focus on low voltage MOSFET solutions for automotive applications. An indepth understanding of automotive system requirements and focused technical capability enables NXP to provide power semiconductor solutions to meet a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power management & control in engine, body or chassis applications, NXP power semiconductors can provide the answer to many automotive system power problems. 42 NXP’s power products are designed and manufactured around the key themes of performance, quality & reliability and are built to withstand long term operation in some of the harshest environments within a typical vehicle. In addition, by providing a complete technology, device and service capability NXP helps you meet the diverse and rigorous technical demands of today’s automotive power switching and control applications, driving the development of tomorrow’s vehicles and keeping you ahead of the rest. Put simply, NXP gives you the power to meet the challenges of automotive power system design, every step of the way. For the most up to date product information, please visit www.nxp.com/automotivemosfets Commitment to Quality Designed with automotive in mind NXP Automotive Power MOSFETs are commonly deployed in many critical applications such as braking, power steering and engine management, where quality and reliability requirements go beyond mere compliance with AEC-Q101 standards. Product qualification strategies start with a baseline of AEC-Q101, but far exceed its requirements to reflect real automotive mission profiles. NXP has more than 15 years experience qualifying automotive grade Trench MOSFETs in such applications, resulting in an impressive track record of reliability. All processes and plants are subject to regular internal audits, as well as TS16949, VDA and specific customer audits. customer focused passion to win Our rigorous attention to detail and commitment to automotive quality has resulted in a sub-ppm combined line, field and 0 Km failure rate at Automotive customers NXP’s Design for Excellence (DfX) programme ensure each new development builds on past learning and that best practice is always employed, resulting in continual product improvement. E X C E L L E N C E ZERO DEFECT Our Zero-Defects culture is supported by a dedicated team of Product Quality, Failure Analysis & Process Engineers at all stages of development & production. Failure analysis is supported by a determination to find real Root Causes and eliminate failure modes with widespread adoption of quality analysis tools and methodologies. Dedicated design & manufacturing facilities focused on providing automotive quality are at the heart of NXP’s manufacturing set-up. Every process step for automotive products is carried out within NXP’s internal and qualified partner facilities; from silicon & package design, through diffusion to assembly and test. For the most up to date product information, please visit www.nxp.com/automotivemosfets 43 4 Steps to select an Automotive MOSFET 1 Select a Voltage e.g. 40 V 2 Select a package, e.g. D2PAK 3 Choose an RDSon from our extensive range 4 Select a ‘BUK’ type and visit www.nxp.com/automotivemosfets to download datasheets, models and order samples Automotive Grade MOSFET Naming Convention BUK 7 6 1R6 40 E Segment: ’BUK’ for automotive grade Gate Drive: 7 = Standard Level 6 = Intermediate Level 9 = Logic Level Package: 6 = D2PAK C = D2PAK-7 2 = DPAK E = I2PAK 5 = TO-220 Y = LFPAK56 K = LFPAK56D 8 = SOT223 44 For the most up to date product information, please visit www.nxp.com/automotivemosfets TrenchMOS Technology: A = Generation 2 B = Generation 3 C = Generation 4 E = Generation 6 Voltage Rating: BV DSS rating 1R6 means in m : <1.6m max at 25C 30 V Automotive MOSFETs Package name Type number VDS [V] RDSon @ 10 V (mΩ) RDSon @ 5 V (mΩ) 7.00 Rth (j-mb) [max] [K/W] Technology 75 1.42 T3 75 1.42 T3 59 2.00 T3 67 1.76 T3 38 2.53 T3 40 2.53 T3 ID [max] @ 25 c(A) O BUK9Y07-30B 30 6.00 BUK7Y07-30B 30 7.00 BUK9Y11-30B 30 9.00 BUK7Y10-30B 30 10.00 BUK9Y22-30B 30 19 BUK7Y20-30B 30 20 BUK9K5R1-30E 30 4.2 5.0 40 2.21 T6 BUK9K5R6-30E 30 4.6 5.5 40 2.36 T6 BUK7K5R1-30E 30 5.1 40 2.21 T6 BUK7K5R6-30E 30 5.6 40 2.36 T6 BUK962R8-30B 30 2.4 75 0.50 T3 BUK762R7-30B 30 2.7 75 0.50 T3 BUK763R4-30B 30 3.4 75 0.59 T3 BUK9605-30A 30 4.6 5.0 75 0.65 T6 BUK9607-30B 30 5.0 7.0 75 0.95 T3 BUK7607-30B 30 7.0 75 0.95 T3 BUK624R5-30C 30 4.5 90 0.95 T4 BUK724R5-30C 30 4.5 75 0.95 T4 BUK9207-30B 30 5.0 7.0 75 0.95 T3 BUK625R2-30C 30 5.2 7.5 90 1.17 T4 BUK7207-30B 30 7.0 75 0.95 T3 BUK6209-30C 30 9.8 15.0 50 1.87 T4 BUK9213-30A 30 11.0 13.0 75 1.00 T2 BUK9214-30A 30 12.0 14.0 63 1.40 T2 BUK6213-30A 30 13.0 55 1.40 T2 BUK6213-30C 30 14.0 22.0 47 2.52 T4 BUK952R8-30B 30 2.4 2.8 75 0.50 T3 BUK752R7-30B 30 2.7 75 0.50 T3 BUK9507-30B 30 5.0 75 0.95 T3 BUK7507-30B 30 7.0 75 0.95 T3 BUK7E2R7-30B 30 2.7 75 0.50 T3 BUK9E04-30B 30 3.0 75 0.59 T3 11.00 22 2.8 6.0 7.0 4.0 Types in bold red represent new products - Types in bold green represent products in development For the most up to date product information, please visit www.nxp.com/automotivemosfets 45 40 V Automotive MOSFETs Package name Type number VDS [V] RDSon @ 10 V (mΩ) RDSon @ 5 V (mΩ) 25 c(A) O Rth (j-mb) [max] [K/W] Technology BUK9Y3R0-40E 40 2.4 3.0 100 0.80 T6 BUK9Y3R5-40E 40 2.9 3.5 100 0.90 T6 BUK7Y3R0-40E 40 3.0 100 0.80 T6 BUK7Y3R5-40E 40 3.5 100 0.90 T6 BUK9Y4R4-40E 40 3.7 100 0.96 T6 BUK7Y4R4-40E 40 4.4 100 0.96 T6 BUK9Y7R6-40E 40 6.2 79 1.59 T6 BUK7Y7R6-40E 40 7.6 79 1.59 T6 BUK9Y12-40E 40 9.9 50 2.48 T6 BUK7Y12-40E 40 12.2 50 2.48 T6 BUK9Y21-40E 40 16.9 31 3.74 T6 BUK7Y21-40E 40 20.9 31 3.74 T6 BUK9Y29-40E 40 23.8 23 4.66 T6 BUK7Y29-40E 40 29.2 24 4.66 T6 BUK7K6R2-40E 40 5.9 40 2.21 T6 BUK9K6R2-40E 40 6.0 6.2 40 2.21 T6 BUK9K6R8-40E 40 6.1 6.9 40 2.36 T6 BUK7K6R8-40E 40 6.8 2.36 T6 BUK9K8R7-40E 40 7.8 30 2.84 T6 BUK7K8R7-40E 40 8.5 30 2.84 T6 BUK9K18-40E 40 16.0 30 3.96 T6 BUK7K18-40E 40 17.4 30 3.96 T6 BUK9K25-40E 40 23.1 24 4.68 T6 BUK7K25-40E 40 25.0 4.68 T6 BUK961R6-40E 40 1.4 120 0.43 T6 BUK761R6-40E 40 1.6 120 0.43 T6 BUK761R7-40E 40 1.6 120 0.46 T6 BUK762R0-40E 40 2.0 120 0.51 T6 BUK962R6-40E 40 2.4 100 0.57 T6 BUK762R6-40E 40 2.6 100 0.57 T6 BUK963R1-40E 40 2.7 3.1 100 0.64 T6 BUK963R2-40B 40 2.8 3.2 100 0.50 T3 BUK762R9-40E 40 2.9 100 0.64 T6 BUK763R1-40B 40 3.1 75 0.50 T3 BUK964R1-40E 40 3.5 75 0.82 T6 4.4 7.6 12.2 20.9 29.2 8.9 19.5 26.7 1.6 2.8 4.1 Types in bold red represent new products - Types in bold green represent products in development 46 ID [max] @ For the most up to date product information, please visit www.nxp.com/automotivemosfets 40 V Automotive MOSFETs Package name Type number VDS [V] RDSon @ 10 V (mΩ) RDSon @ 5 V (mΩ) ID [max] @ 25 c(A) O Rth (j-mb) [max] [K/W] Technology BUK9604-40A 40 4.0 4.4 75 0.50 T2 BUK964R4-40B 40 4.0 4.4 75 0.59 T3 BUK764R0-40E 40 4.0 75 0.82 T6 BUK764R3-40B 40 4.3 75 0.59 T3 BUK965R4-40E 40 4.4 75 1.09 T6 BUK765R3-40E 40 4.9 75 1.09 T6 BUK9606-40B 40 5.0 75 0.74 T3 BUK765R2-40B 40 5.2 75 0.74 T3 BUK9609-40B 40 7.0 75 0.95 T3 BUK768R1-40E 40 7.2 75 1.56 T6 BUK7608-40B 40 8.0 75 0.95 T3 BUK625R0-40C 40 5.0 90 0.95 T4 BUK725R0-40C 40 5.0 75 0.95 T4 BUK626R2-40C 40 6.2 8.8 90 1.17 T4 BUK9209-40B 40 7.0 9.0 75 0.95 T3 BUK7208-40B 40 8.0 75 0.95 T3 BUK6212-40C 40 11.2 50 1.87 T4 BUK6218-40C 40 16.0 42 2.52 T4 BUK751R8-40E 40 1.8 120 0.43 T6 BUK752R3-40E 40 2.3 120 0.51 T6 BUK953R2-40B 40 2.8 100 0.50 T3 BUK753R1-40E 40 3.1 100 0.64 T6 BUK753R1-40B 40 3.1 75 0.50 T3 BUK9504-40A 40 4.0 4.4 75 0.50 T2 BUK954R4-40B 40 4.0 4.4 75 0.59 T3 BUK754R3-40B 40 4.3 75 0.59 T3 BUK9506-40B 40 5.0 75 0.74 T3 BUK755R2-40B 40 5.2 75 0.74 T3 BUK9509-40B 40 7.0 75 0.95 T3 BUK758R3-40E 40 7.4 75 1.56 T6 BUK7508-40B 40 8.0 75 0.95 T3 BUK7E1R8-40E 40 1.8 120 0.43 T6 BUK7E1R9-40E 40 1.9 120 0.46 T6 BUK7E2R3-40E 40 2.3 120 0.51 T6 BUK7E3R1-40E 40 3.1 100 0.64 T6 BUK7E8R3-40E 40 7.4 75 1.56 T6 5.4 6.4 9.0 6.9 16.3 3.2 6.4 9.0 Types in bold red represent new products For the most up to date product information, please visit www.nxp.com/automotivemosfets 47 55 V - 60 V Automotive MOSFETs Package name Type number VDS [V] RDSon @ 10 V (mΩ) RR DSon DSon @ 5 V (mΩ) 4.8 BUK9Y4R8-60E 60 4.1 BUK7Y4R8-60E 60 4.8 BUK9Y6R0-60E 60 5.2 BUK7Y6R0-60E 60 6.0 BUK9Y7R2-60E 60 6.2 BUK7Y7R2-60E 60 7.2 BUK9Y8R7-60E 60 7.5 BUK7Y8R7-60E 60 8.7 BUK9Y15-60E 60 13.1 BUK7Y15-60E 60 15.1 BUK9Y25-60E 60 21.6 BUK7Y25-60E 60 25.0 BUK9Y43-60E 60 37.3 BUK7Y43-60E 60 43.2 BUK9Y59-60E 60 51.3 BUK7Y59-60E 60 59.3 BUK9K12-60E 60 10.7 BUK7K12-60E 60 11.2 BUK9K13-60E 60 12.0 BUK7K13-60E 60 12.5 BUK9K17-60E 60 16.1 BUK7K17-60E 60 17.0 BUK9K35-60E 60 32.0 BUK7K35-60E 60 34.6 BUK9K52-60E 60 49.0 BUK7K52-60E 60 51.8 BUK962R5-60E 60 2.3 BUK762R4-60E 60 2.4 BUK962R8-60E 60 2.5 BUK762R6-60E 60 2.6 BUK963R3-60E 60 3.0 BUK763R1-60E 60 3.1 BUK964R2-55B 55 3.7 BUK763R9-60E 60 3.9 BUK964R2-60E 60 3.9 BUK764R0-55B 55 4.0 Technology 100 0.60 T6 100 0.60 T6 100 0.70 T6 100 0.70 T6 100 0.84 T6 100 0.84 T6 89 1.00 T6 89 0.96 T6 53 1.59 T6 53 1.59 T6 33 2.48 T6 33 2.48 T6 20 3.74 T6 20 3.74 T6 15 4.66 T6 16 4.66 T6 40 2.21 T6 40 2.21 T6 40 2.36 T6 40 2.36 T6 30 2.84 T6 30 2.84 T6 22 3.96 T6 22 3.96 T6 17 4.68 T6 17 4.68 T6 120 0.43 T6 120 0.43 T6 120 0.46 T6 120 0.46 T6 120 0.51 T6 120 0.51 T6 75 0.50 T3 100 0.57 T6 100 0.57 T6 75 0.50 T3 25 c(A) O 6.0 7.2 8.7 15.1 25.0 43.2 59.3 11.5 12.9 17.5 35.0 55.0 2.5 2.8 3.3 4.2 4.2 Types in bold red represent new products - Types in bold green represent products in development 48 Rth (j-mb) [max] [K/W] ID [max] @ For the most up to date product information, please visit www.nxp.com/automotivemosfets 55 V - 60 V Automotive MOSFETs Package name Type number VDS [V] RDSon @ 10 V (mΩ) RDSon @ 5 V (mΩ) 4.8 Rth (j-mb) [max] [K/W] Technology 100 0.64 T6 100 0.64 T6 ID [max] @ 25 c(A) O BUK964R8-60E 60 4.4 BUK764R4-60E 60 4.5 BUK9606-55B 55 5.4 6.0 75 0.58 T3 BUK966R5-60E 60 5.9 6.5 75 0.82 T6 BUK7606-55B 55 6.0 75 0.59 T3 BUK766R0-60E 60 6.0 75 0.82 T6 BUK9608-55B 55 7.0 75 0.74 T3 BUK7607-55B 55 7.1 75 0.74 T3 BUK969R0-60E 60 8.0 75 1.09 T6 BUK768R3-60E 60 8.3 75 1.09 T6 BUK9610-55A 55 9.0 75 0.75 T2 BUK7610-55AL 55 10.0 75 0.50 T2 BUK9611-55A 55 10.0 11.0 75 0.90 T2 BUK9612-55B 55 10.0 12.0 75 0.95 T3 BUK7611-55A 55 11.0 75 0.90 T2 BUK7611-55B 55 11.0 75 0.95 T3 BUK9614-60E 60 12.8 56 1.56 T6 BUK7613-60E 60 13.0 58 1.56 T6 BUK9616-55A 55 15.0 16.0 66 1.10 T2 BUK9618-55A 55 16.0 18.0 61 1.10 T2 BUK9620-55A 55 18.0 20.0 54 1.20 T2 BUK7620-55A 55 20.0 54 1.20 T2 BUK9624-55A 55 21.7 46 1.40 T2 BUK7624-55A 55 24.0 47 1.40 T2 BUK9628-55A 55 25.0 42 1.50 T2 BUK7628-55A 55 28.0 42 1.50 T2 BUK9635-55A 55 32.0 34 1.80 T2 BUK7635-55A 55 35.0 35 1.70 T2 BUK9675-55A 55 68.0 20 2.40 T2 BUK7675-55A 55 75.0 20 2.40 T2 BUK6207-55C 55 7.8 10.0 90 0.95 T4 BUK6210-55C 55 9.6 13.2 78 1.17 T4 BUK7210-55B 55 10.0 75 0.95 T3 BUK9212-55B 55 10.0 75 0.95 T3 BUK7212-55B 55 12.0 75 0.95 T3 BUK9215-55A 55 13.6 62 1.30 T2 8.4 9.0 10.0 14.0 24.0 28.0 35.0 75.0 12.0 15.0 Types in bold red represent new products For the most up to date product information, please visit www.nxp.com/automotivemosfets 49 55 V - 60 V Automotive MOSFETs Package name Type number VDS [V] RDSon @ 10 V (mΩ) RDSon @ 5 V (mΩ) Rth (j-mb) [max] [K/W] Technology 62 1.30 T2 25 c(A) O BUK7215-55A 55 15.0 BUK9219-55A 55 17.6 19.0 55 1.30 T2 BUK6217-55C 55 19.0 24.5 44 1.87 T4 BUK7219-55A 55 19.0 55 1.30 T2 BUK9222-55A 55 20.0 48 1.50 T2 BUK7222-55A 55 22.0 48 1.50 T2 BUK9225-55A 55 22.0 43 1.60 T2 BUK7225-55A 55 25.0 43 1.60 T2 BUK9230-55A 55 27.0 30.0 38 1.70 T2 BUK6228-55C 55 29.0 38.0 31 2.52 T4 BUK7230-55A 55 30.0 38 1.70 T2 BUK9237-55A 55 33.0 32 1.94 T2 BUK7237-55A 55 37.0 32 1.90 T2 BUK9245-55A 55 40.0 45.0 28 2.10 T2 BUK9277-55A 55 69.0 77.0 18 2.93 T2 BUK7277-55A 55 77.0 18 2.90 T2 BUK92150-55A 55 125.0 11 4.10 T2 BUK72150-55A 55 150.0 11 4.10 T2 BUK954R2-55B 55 3.7 75 0.50 T3 BUK754R0-55B 55 4.0 75 0.50 T3 BUK9508-55B 55 7.0 75 0.74 T3 BUK7507-55B 55 7.1 75 0.74 T3 BUK953R5-60E 60 3.4 120 0.51 T6 BUK7510-55AL 55 10.0 75 0.50 T2 BUK9512-55B 55 10.0 75 0.95 T3 BUK7511-55B 55 11.0 75 0.95 T3 BUK954R8-60E 60 4.5 100 0.64 T6 BUK7506-55A 55 6.3 75 0.50 T2 BUK7508-55A 55 8.0 75 0.59 T2 BUK7509-55A 55 9.0 75 0.71 T2 BUK9511-55A 55 10.0 75 0.90 T2 22.0 25.0 37.0 140.0 4.2 8.4 3.7 12.0 4.9 11.0 Types in bold red represent new products 50 ID [max] @ For the most up to date product information, please visit www.nxp.com/automotivemosfets 55 V - 60 V Automotive MOSFETs Package name Type number VDS [V] RDSon @ 10 V (mΩ) RDSon @ 5 V (mΩ) Rth (j-mb) [max] [K/W] Technology 66 1.10 T2 66 1.10 T2 61 1.10 T2 54 1.20 T2 46 1.40 T2 42 1.50 T2 34 1.80 T2 35 1.70 T2 20 2.40 T2 20 2.40 T2 ID [max] @ 25 c(A) O BUK9516-55A 55 15.0 BUK7516-55A 55 16.0 BUK9518-55A 55 16.0 BUK7520-55A 55 20.0 BUK9524-55A 55 21.7 BUK7528-55A 55 28.0 BUK9535-55A 55 32.0 BUK7535-55A 55 35.0 BUK9575-55A 55 68.0 BUK7575-55A 55 75.0 BUK7E2R6-60E 60 2.6 120 0.43 T6 BUK7E3R5-60E 60 3.5 120 0.51 T6 BUK7E4R6-60E 60 4.6 100 0.64 T6 BUK9E06-55B 55 5.4 75 0.58 T3 BUK9E06-55A 55 5.8 6.0 75 0.50 T2 BUK9E08-55B 55 7.0 6.3 75 0.74 T3 BUK7E07-55B 55 7.1 8.4 75 0.74 T3 BUK7E11-55B 55 11.0 75 0.95 T3 BUK7E13-60E 60 13.0 58 1.56 T6 BUK9832-55A 55 29.0 12 15.00 T2 BUK9880-55A 55 73.0 32.0 7 15.00 T2 BUK7880-55A 55 80.0 80.0 7 15.00 T2 BUK98150-55A 55 137.0 6 15.00 T2 BUK78150-55A 55 150.0 6 15.00 T2 16.0 18.0 24.0 35.0 75.0 150.0 Types in bold red represent new products For the most up to date product information, please visit www.nxp.com/automotivemosfets 51 75 V - 80 V Automotive MOSFETs Package name Type number RDSon VDS [V] @ 10 V (mΩ) RRDSon DSon @ 5 V (mΩ) ID [max] @ 8.5 100 0.55 T6 100 0.55 T6 93 0.70 T6 93 0.70 T6 77 0.84 T6 77 0.84 T6 66 0.96 T6 66 0.96 T6 39 1.59 T6 39 1.59 T6 24 2.48 T6 24 2.48 T6 15 3.74 T6 15 3.74 T6 11 4.66 T6 11 4.66 T6 38 2.21 T6 39 2.21 T6 35 2.36 T6 35 2.36 T6 27 2.84 T6 27 2.84 T6 16 3.96 T6 16 3.96 T6 12 4.68 T6 Rth (j-mb) [max] [K/W] Technology BUK9Y8R5-80E 80 7.4 BUK7Y7R8-80E 80 7.8 BUK9Y11-80E 80 9.4 BUK7Y9R9-80E 80 9.9 BUK9Y12-80E 80 10.9 BUK7Y12-80E 80 11.9 BUK9Y14-80E 80 13.0 BUK7Y14-80E 80 14.2 BUK9Y25-80E 80 22.7 BUK7Y25-80E 80 24.7 BUK9Y41-80E 80 38.0 BUK7Y41-80E 80 41.4 BUK9Y72-80E 80 65.8 BUK7Y72-80E 80 71.7 BUK9Y107-80E 80 93.0 BUK7Y98-80E 80 97.8 BUK9K19-80E 80 17.8 BUK7K19-80E 80 18.0 BUK9K21-80E 80 19.9 BUK7K21-80E 80 20.2 BUK9K29-80E 80 27.4 BUK7K29-80E 80 27.9 BUK9K57-80E 80 55.5 BUK7K57-80E 80 56.6 BUK9K85-80E 80 83.8 BUK7K85-80E 80 85.7 12 4.68 T6 BUK763R8-80E 80 3.8 120 0.43 T6 BUK964R2-80E 80 4.0 120 0.43 T6 BUK764R2-80E 80 4.2 120 0.46 T6 BUK964R7-80E 80 4.5 4.7 120 0.46 T6 BUK9606-75B 75 5.5 6.1 75 0.50 T3 BUK7606-75B 75 5.6 75 0.50 T3 BUK9609-75A 75 8.5 75 0.65 T2 BUK769R6-80E 80 9.6 75 0.82 T6 BUK9611-80E 80 10.0 75 0.82 T6 BUK7613-75B 75 13.0 75 0.95 T3 BUK9616-75B 75 14.0 16.4 67 0.95 T3 BUK9623-75A 75 22.0 23.0 53 1.10 T2 BUK7623-75A 75 23.0 53 1.10 T2 BUK6211-75C 75 11.0 74 0.95 T4 BUK7214-75B 75 14.0 70 0.95 T3 BUK6215-75C 75 15.0 18.0 57 1.17 T4 BUK9217-75B 75 15.0 17.0 64 0.95 T3 BUK9226-75A 75 24.6 26.0 45 1.30 T2 BUK7226-75A 75 26.0 45 1.00 T2 BUK6226-75C 75 29.0 35.0 33 1.87 T4 BUK6246-75C 75 46.0 56.0 22 2.52 T4 BUK753R8-80E 80 4.0 120 0.43 T6 BUK9506-75B 75 5.5 75 0.50 T3 BUK7506-75B 75 5.6 75 0.50 T3 BUK7509-75A 75 9.0 75 0.65 T2 BUK7513-75B 75 13.0 75 0.95 T3 BUK9516-75B 75 14.0 67 0.95 T3 11.0 11.9 14.2 24.7 41.4 71.7 107.0 18.8 21.0 29.1 59.0 89.3 4.2 9.0 11.0 13.2 6.1 16.4 Types in bold red represent new products - Types in bold green represent products in development 52 25 c(A) O For the most up to date product information, please visit www.nxp.com/automotivemosfets 100 V Automotive MOSFETs Package name Type number VDS [V] RDSon @ 10 V (mΩ) RDSon @ 5 V (mΩ) 12 Rth (j-mb) [max] [K/W] Technology 90 0.6 T6 90 0.6 T6 71 0.7 T6 71 0.7 T6 59 0.8 T6 59 0.8 T6 51 1.0 T6 51 1.0 T6 30 1.6 T6 30 1.6 T6 18 2.5 T6 18 2.5 T6 11 3.7 T6 11 3.7 T6 9 4.7 T6 9 4.7 T6 30 2.2 T6 ID [max] @ 25 c(A) O BUK9Y12-100E 100 12 BUK7Y12-100E 100 12 BUK9Y15-100E 100 15 BUK7Y15-100E 100 16 BUK9Y19-100E 100 18 BUK7Y19-100E 100 19 BUK9Y22-100E 100 22 BUK7Y22-100E 100 22 BUK9Y38-100E 100 38 BUK7Y38-100E 100 38 BUK9Y65-100E 100 63 BUK7Y65-100E 100 65 BUK9Y113-100E 100 110 BUK7Y113-100E 100 113 BUK9Y153-100E 100 149 BUK7Y153-100E 100 153 BUK9K29-100E 100 27 BUK7K29-100E 100 28 30 2.2 T6 BUK7K32-100E 100 31 27 2.4 T6 BUK9K32-100E 100 31 33 27 2.4 T6 BUK9K45-100E 100 42 45 21 2.8 T6 BUK7K45-100E 100 44 21 2.8 T6 BUK9K89-100E 100 85 13 4.0 T6 BUK7K89-100E 100 88 12 4.0 T6 BUK7K134-100E 100 134 9 4.7 T6 BUK9K134-100E 100 154 9 4.7 T6 BUK765R0-100E 100 5 120 0.4 T6 BUK965R8-100E 100 6 120 0.4 T6 BUK768R1-100E 100 8 100 0.6 T6 BUK969R3-100E 100 9 100 0.6 T6 BUK7613-100E 100 13 72 0.8 T6 BUK9615-100E 100 14 15 66 0.8 T6 BUK9620-100B 100 19 20 63 0.8 T3 BUK7619-100B 100 19 64 0.7 T3 BUK7620-100A 100 20 63 0.8 T2 BUK7626-100B 100 26 49 1.0 T3 15 19 22 38 65 113 153 29 89 159 6 9 Types in bold red represent new products - Types in bold green represent products in development For the most up to date product information, please visit www.nxp.com/automotivemosfets 53 100 V Automotive MOSFETs Package name SOT223 Type number VDS [V] RDSon @ 10 V (mΩ) RDSon @ 5 V (mΩ) ID [max] @ 25 c(A) O Rth (j-mb) [max] [K/W] Technology BUK9628-100A 100 27 28 49 0.9 T2 BUK9629-100B 100 27 29 46 1.0 T3 BUK7628-100A 100 28 47 0.9 T2 BUK7631-100E 100 31 34 1.6 T6 BUK9637-100E 100 36 37 31 1.6 T6 BUK9660-100A 100 58 60 26 1.4 T2 BUK7660-100A 100 60 26 1.4 T2 BUK9675-100A 100 72 23 1.5 T2 BUK7675-100A 100 75 23 1.5 T2 BUK96180-100A 100 173 11 2.8 T2 BUK7227-100B 100 27 48 1.0 T3 BUK9230-100B 100 28 30 47 1.0 T3 BUK9240-100A 100 39 40 33 1.3 T2 BUK7240-100A 100 40 34 1.3 T2 BUK9275-100A 100 72 22 1.7 T2 BUK7275-100A 100 75 22 1.7 T2 BUK755R4-100E 100 5 120 0.4 T6 BUK9510-100B 100 10 75 0.5 T3 BUK7510-100B 100 10 75 0.5 T3 BUK9515-100A 100 14 75 0.7 T2 BUK7515-100A 100 15 75 0.5 T2 BUK9520-100B 100 19 20 63 0.8 T3 BUK9520-100A 100 19 20 63 0.8 T2 BUK7520-100A 100 20 63 0.8 T2 BUK7526-100B 100 26 49 1.0 T3 BUK9529-100B 100 27 46 1.0 T3 BUK7528-100A 100 28 47 0.9 T2 BUK9535-100A 100 34 41 1.0 T2 BUK7535-100A 100 35 41 1.0 T2 BUK7540-100A 100 40 37 1.1 T2 BUK9575-100A 100 72 23 1.5 T2 BUK7575-100A 100 75 23 1.5 T2 BUK7E5R2-100E 100 5 120 0.4 T6 BUK9875-100A 100 72 75 7 15 T2 BUK98180-100A 100 173 180 5 15 T2 75 180 75 10 15 29 35 75 Types in bold red represent new products 54 For the most up to date product information, please visit www.nxp.com/automotivemosfets TrenchPLUS MOSFETs TrenchPLUS is a range of standard MOSFETs with additional sensors to implement cost-effective protection features, thus protection features, such as current and temperature sensing eliminating the need to design with protected power devices. All the components, overvoltage clamps, and gate protection (ESD) diodes. standard products listed below offer one or more “PLUS” features. The system microcontroller can use data gathered from these Custom versions can be developed for high-volume applications. Surface Mount Package Leaded Package 10.0 x 15.0 x 4.5 15.0 x 10.0 x 4.5 10.0 x 19.0 x 4.5 ● ● ● BUK7L06-34ARC 34 11 75 ● ● ● BUK7L11-34ARC 40 4.1 75 40 5 75 40 5 75 40 5 75 40 6 75 ● 40 6.6 75 ● ● ● BUK9107-40ATC BUK9907-40ATC 40 8 75 ● ● ● BUK7107-40ATC BUK7907-40ATC 40 8 75 ● BUK7108-40AIE BUK7908-40AIE 55 6.6 ● BUK9107-55ATE BUK9907-55ATE 55 7 75 BUK7107-55AIE BUK7907-55AIE 55 7 75 BUK7107-55ATE BUK7907-55ATE 55 8 75 BUK7C08-55AITE 55 9 75 BUK9C10-55BIT 75 9 75 BUK7109-75AIE BUK7909-75AIE 75 9 75 BUK7109-75ATE BUK7909-75ATE 75 10 75 7 7 10 75 Current Sensing 75 Temperature Sense 6 ID (max) @ 25 °C (A) 34 RDSon (max) @ 5 V (mΩ) Gate Resistor 10.0 x 15 x 4.5 Gate Drain Clamps 5-pin TO220 (SOT263B-01) Gate Source Clamps TO220AB (SOT78C) RDSon (max) @ 10 V (mΩ) 5-pin D2PAK (SOT426) VDS (V) 7-pin D2PAK (SOT427) ● ● ● BUK714R1-40BT BUK794R1-40BT ● BUK7105-40AIE BUK7905-40AIE ● BUK7105-40ATE BUK7905-40ATE BUK7905-40AI ● ● ● ● BUK7C06-40AITE ● ● BUK7C10-75AITE For the most up to date product information, please visit www.nxp.com/automotivemosfets 55 Automotive TrenchPLUS Part Numbering BUK 7 1 4R1 Segment: ’BUK’ for automotive grade Gate Drive: 7 = Standard Level 9 = Logic Level Package: C = D2PAK-7 1 = 5 pin D2PAK L = TO-220AB 9 = 5 pin TO-220 40 B + TrenchPLUS Features: C = G-D and G-S clamps E = ESD protection R = Gate resistor T = Temperature sensor I = Current sensor L = Linear mode TrenchMOS Technology: A = Generation 2 B = Generation 3 C = Generation 4 E = Generation 6 Voltage Rating: BV DSS rating 4R1 means 56 For the most up to date product information, please visit www.nxp.com/automotivemosfets in m : <4.1m max at 25C Quick Learning Videos Introduction to Clip-Bonding Introducing NXP LFPAK LFPAK Power-SO8 vs. DPAK www.nxp.com/quicklearning1 www.nxp.com/quicklearning5 www.nxp.com/quicklearning18 NextPower Cordless MOSFETs for battery powered tools Next Power Live!, MOSFETs for HOT SWAP and Power over Ethernet NextPowerS3 MOSFETs for DC/DC buck regulators www.nxp.com/quicklearning28 www.nxp.com/quicklearning29 www.nxp.com/quicklearning32 Reverse Recovery & Diode Leakage in SMPS Power MOSFET operation in Linear Mode Single Shot Avalanche Ruggedness www.nxp.com/quicklearning33 www.nxp.com/quicklearning34 www.nxp.com/quicklearning35 MOSFETs for Power-over-Ethernet (PoE) PSE Applications www.nxp.com/quicklearning36 For the most up to date product information, please visit www.nxp.com/mosfets 57 Notes 58 For the most up to date product information, please visit www.nxp.com/mosfets Notes For the most up to date product information, please visit www.nxp.com/mosfets 59 For latest product information, please visit www.nxp.com/mosfets Follow us on twitter @MOSFETs © NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent - or other industrial or intellectual property rights. Date of release: July 2014 Document order number: 9397 750 17590