Discretes for portable devices and mobile handsets

Safeguard sensitive ICs - Increase
battery life - Save space
With NXP key products as
recommended in this brochure
Interface / Function
Description
Product type
Package
NFC antenna
protection
18 / 24 V Birectional
low capacitance ESD
protection diode
PESD18VF1BL
PESD24VF1BL
PESD18VF1BSF
PESD24VF1BSF
DFN1006
DFN1006
DSN0603
DSN0603
10
MIPI CSI / DSI
protection
Common Mode
Filter with integrated
ESD protection
PCMF2DFN1
PCMF3DFN1
DFN2520
DFN4020
11
Integrated or
discrete solutions
with very low line
capacitance
IP4369CX4 /
IP4303CX4
PRTR5V0U2F
IP4282CZ6
PUSB3F96
PESD5V0F1BSF
USB 2.0 OTG
protection and EMI
filter
Common mode filter
for USB2.0
IP3319CX6
WLCSP
12
USB On-The-Go
(OTG) protection
Protection of microUSB ports
Vbus protection with
VRWM = 5.5, 12, 15,
or 30 V
PUSBMxVX4-TL
series
DFN1616
13
HDMI interface
protection
Very good system
protection for highspeed TMDS lines
PUSB3F96
DFN2510
12
SIM Card protection
ESD protection
diodes with and
without EMI Filtering
IP4064CX8
IP4364CX8
IP4365CX11
IP4366CX8
IP4264CZ8
PESD5V0V4Ux
family
PESD5V0F5UF
PESD5V0F5UV
WLCSP
WLCSP
WLCSP
WLCSP
several small
SMD and DFN
packages
SD Card protection
Devices for
protection
and interface
conditioning
IP4340CX15
IP4357CX17
IP4251CZ12
IP4252CZ12
WLCSP
WLCSP
DFN2514
DFN2514
15
Audio Interface
protection (Headset,
Speaker, Mic)
Bidirectional ESD
protection diode
with 12 V reverse
standoff voltage
PESD12VV1BL
DFN1006
12
Battery protection /
Charger interface
Battery MOSFET /
MOSFETs in the pass
element
PMPB15XP
PMDP58UPE
PMDPB70XP
DFN2020
DFN2020
DFN2020
16
Surge protection /
Charger interface
Transient Voltage
Suppressor (TVS)
Voltage regulator
diode
Zener diodes
PTVS12VS1UR
PTVS26VS1UR
BZX884-C5V6
TDZ5V6J
SOD123W
SOD123W
DFN1006
SOD323F
16
USB 3.0 / USB
2.0 High-Speed
protection
Page
DFN1006
DFN1010
DFN2510
DSN0603
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
Printed in the Netherlands
Package
Generic ESD
protection in smallest
form factors
Various ESD
protection diodes
for generic and highspeed applications
PESDxSF series
PESDxBL /
PESDxUL
PESDxBLD /
PESDxULD
DSN0603
DFN1006
DFN1006
DFN1006D
DFN1006D
4, 5
Boost converter for
LED backlight
20, 40 V, up to 2 A,
low VF Schottky
rectifiers
PMEGxEPK series
DFN1608D
8
Wireless charging
Very efficient low
RDSon MOSFETs
Very efficient low
VF and IR Schottky
diodes
PMPB12UN
PMPB15XN
PMDPB85UPE
PMPB16XN
PMPB40SNA
PMPB33XP
PMPB48EP
PMEGxEPK series
PMEGxBELD series
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
DFN1608D
DFN1006D
17
Ultra-small MOSFETs
for
} Load switches
}B
attery / Charger
switches
} DC-DC conversion
12-60 V DFN
MOSFETs
PMXB40UNE
PMXB65UPE
PMDXB950UPE
PMDXB900UNE
PMCXB900UE
PMZB290UN
PMZ250UN
2N7002BKMB
NX3008NBKMB
NX3008PBKMB
PMZB350UPE
PMPB15XP
PMDPB70XP
PMC85XP
PMDPB58UPE
PMPB11EN
PMPB20EN
DFN1010
DFN1010
DFN1010
DFN1010
DFN1010
DFN1006
DFN1006
DFN1006
DFN1006
DFN1006
DFN1006
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
6, 7
Bipolar transistor /
MOSFET for
} Load switches
} Power management
} Charger circuits
PNP low VCEsat
transistor / N-ch.
Trench MOSFET
combination
PBSM5240PF
DFN2020
9
Bipolar transistors for
the Charger path
Low VCEsat Transistors
PBSS5330PA
PBSS230QA
PBSS5330X
PBSS5320X
PBSS301PD
DFN2020
DFN1010
SOT89
SOT89
SOT457
9
14
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
Document order number: 9397 750 17444
Product type
13
© 2013 NXP Semiconductors N.V.
Date of release: September 2013
Description
WLCSP
www.nxp.com
patent- or other industrial or intellectual property rights.
Interface / Function
Page
Discretes for portable devices
and mobile handsets
Setting the standard in performance,
efficiency, and size
NXP: Your one-stop-shop discrete partner for mobile devices
Looking for solutions to
} Safeguard sensitive ICs
} Increase battery life
} Save space
An NXP discrete solution for every interface
• NFC Antenna protection
Page 10
• USB2.0, USB3.0, USB OTG with
Vbus protection
Page 12, 13
• Battery protection
Page 16
• Camera, Keypad, Display (MIPI,
DSI, CSI)
Page 11
• Microphone, speaker, head set
Page 12
• (SD-)Memory Cards, SIM Cards
Page 14, 15
Benefit from our experience and speed up time-to-market! We offer:
} 60 years experience in developing and producing diodes and transistors
} Long-standing partnerships with every major handset maker in the industry
} Commitment to highest quality standards and a reliable, efficient supply infrastructure, we are the no. 1 discrete supplier in units
} One of the most comprehensive discrete portfolio perfectly fitting the needs of mobile device makers with
- Advanced protection and filtering solutions
-H
ighly efficient Schottky diodes, small-signal MOSFETs, and bipolar transistors
- Next generation package solutions
• Wireless charging
Page 17
• LED backlight boost converter
Page 8
• HDMI protection
Page 12
• Generic ESD protection
Page 4, 5
• Ultra-small MOS and bipolar
transistors for
} Load switches
} Charger / battery switches
} DC-DC conversion
Page 6, 7, 9
Choose the solution you need from NXP‘s broad range of Discrete Flat No-leads (DFN) packages –
one of the most extensive in industry
} More than 30 leadless package options, from 2 to 32 pins
} From ultra-small 0603 size (0201 inch) to medium power
Package highlights include
Packages with heat sink at die pad and dual die pad
} Thermal excellence, for high power on a small footprint, enabling smaller designs
} Multiple configurations possible
Package highlights include
Packages with tin-plated and 100% solderable side pads
} Enabling visual inspection of solder joints
} For enhanced robustness, optimized for maximum sheer forces,
board bending and reduced package tilting angle
} Four package options available with 2, 3, and 6 pins
Largest discrete portfolio in
Ultra-small DSN0603 package
1 x 1 mm and 1 x 0.6 mm packages,
0.6 x 0.3 mm
only 0.37 mm high
only 0.3 mm high
Download
DFN Package poster
Superior thermal performance: With a high power
dissipation density DFN2020 far exceeds SO-8.
More details in Application note 11304. Download now:
2
Mobile brochure
Application note 11304:
www.nxp.com/documents/application_note/AN11304.pdf
DFN Package Poster
www.nxp.com/documents/other/Discrete_Flat_No-leads_DFN_package_poster.pdf
Mobile brochure
3
Best protection in smallest packages – NXP ESD protection solutions in 1006- and 0603- size
Industry’s broadest portfolio of protection diodes in DFN1006(D)-2
As devices are getting smaller and data rates faster, today’s electronic
circuits are increasingly sensitive to ESD. NXP offers a large portfolio of ESD
protection diodes in the leadless ultra-small plastic package DFN1006(D)-2
with the industry standard outline 0603 (0402 inch).
Key features and benefits:
} Ultra-small package size of 1 x 0.6 mm and a height of 0.37 mm / 0.5 mm
} Up to 30 kV ESD robustness according to IEC61000-4-2
} Up to 15 A peak pulse current for an 8/20 µs pulse
} Ultra low leakage current of 1 nA typical – ideal for battery powered devices
}P
ackage version with tin-plated, solderable side pads available
(DFN1006D-2) (fully compatible to standard leadless 1006, 2-pin packages)
DSN0603-2 – the smallest available package for protection diodes
NXP continuously extends its protection portfolio in DSN0603-2 (0201 inch) –
the ideal fit for protection solutions like data-, speaker- and microphone-line
protection or keypad protection in smart phones or tablets, but also for
high-speed interface protection.
DFN1006D-2 Outline
0.4
max
0.65
0.55
0.30
0.22
2
0.65
0.30
0.22
1.05
0.95
0.15
0.13
1
1
0.55
0.45
DSN0603-2 Outline
Key features and benefits:
}U
ltra small package size of 0.6 x 0.3 mm and ultra low package height of
only 0.3 mm save PCB space
}U
p to 30 kV ESD robustness according to IEC61000-4-2
}U
p to 8 A peak pulse current for an 8/20 µs pulse
}U
ltra low leakage current of 1 nA typical and 0.1 µA max. – ideal for battery
powered devices
} L ine capacitances down to 0.25 pF
cathode marking on top side
DFN1006-2 Outline
Portfolio:
}G
eneral purpose devices with high surge rating and ESD robustness and
better clamping performance
}U
ni-directional ESD protection diodes for a wide range of max. reverse
operating voltages VRWM
2
0.25
0.23
0.4
0.625
0.575
0.325
0.275
0.32
0.28
0.0076
(2)
Note
1. Dimension A is including coating foil thickness.
2. The marking bar indicates the cathode.
Highlight product: PESD5V0F1BSF
} Ultra low line capacitance of 0.25 pF
}M
inimized capacitance variation over voltage
}H
igh ESD robustness = 10 kV
} Bi-directional configuration to cover many applications where AC signals
need to be handled or lowest capacitance values are indispensable
High speed data lines
Low capacitance
More key products:
Key products:
PESD3V3X1BL
PESD5V0X1BCAL
PESD5V0X1BL
PESD5V0V1BL
PESD5V0F1BL
PESD5V0X1BCL
PESD12VV1BL
PESD18VF1BL
Cd (typ.)
in pF
1.3
0.85
0.9
11
0.4
0.49
17
0.4
VRWM in V
3.3
5
5
5
5.5
5.5
12
18
VESD in kV
(IEC61000-4-2)
9
15
9
30
10
8
30
10
Uni-directional diodes in DFN1006-2 (SOD882)
PESD3V3U1UL
PESD3V3L1UL
PESD3V3S1UL
PESD5V0U1UL
PESD5V0L1UL
PESD9X5.0L
PESD5V0S1UL
PESD9X7.0L
PESD12VS1UL
PESD15VS1UL
PESD16VX1UL
PESD24VS1UL
PESD36VS1UL
Cd (typ.)
in pF
2.6
34
207
2
25
68
152
62
38
32
0.83
23
18
VRWM in V
3.3
3.3
3.3
5
5
5
5
7
12
15
16
24
36
VESD in kV
(IEC61000-4-2)
9
30
30
9
26
30
30
30
30
30
8
23
30
Bi-directional diodes in DFN1006D-2 (SOD882D)
PESD5V0U1BLD
PESD5V0V1BLD
PESD5V0S1BLD
PESD5V0F1BLD
Cd (typ.)
in pF
2.9
11
35
0.4
VRWM in V
5
5
5
5.5
VESD in kV
(IEC61000-4-2)
10
30
30
10
Mobile brochure
PESD5V0F1BSF, 0.25 pF
USB2.0
PESD5V0F1USF, 0.5 pF
Unidirectional
Bidirectional
PESD18VF1BSF, 0.3 pF
PESD24VF1BSF, 0.4 pF
/24V
- For NFC antenna
NFC
PESD5V0V1USF, 4 pF, 15 kV
PESD5V0V1BSF, 3.5 pF, 15 kV
Uni-directional diodes in DFN1006D-2 (SOD882D)
PESD5V0L1ULD
PESD5V0S1ULD
PESD5V0X1ULD
PESD5V0X1UALD
PESD12VS1ULD
PESD15VS1ULD
PESD24VS1ULD
Cd (typ.)
in pF
25
152
0.95
1.55
38
32
23
VRWM in V
5
5
5.5
5.5
12
15
24
VESD in kV
(IEC61000-4-2)
26
30
8
15
30
30
23
View complete
ESD protection
portfolio
PESD5V0V1BCSF, 5.3 pF, 20 kV
PESD5V0V1BDSF, 5.3 pF, 25 kV
PESD5V0L1USF, 12 pF, 30 kV
General
protection
PESD5V0L1BSF, 12 pF, 30 kV
PESD5V0S1USF, 35 pF, 30 kV
PESD5V0S1BSF, 35 pF, 30 kV
Visit the DSN0603-2 ESD
product information page
8 kV -10 kV
www.nxp.com/products/esd_emi_and_signal_conditioning/
4
eSATA
USB3.0
Low speed data lines
High capacitance
Bi-directional diodes in DFN1006-2 (SOD882)
Interfaces
PESD5V0F1BRSF, 0.25 pF
15 kV
> = 20kV
www.nxp.com/group/11064
Mobile brochure
5
High performance MOSFETs in small packages – for switching and power conversion
Discover NXP’s extensive range of high-performance, low RDSon MOSFETs in small form factors
– DFN packages save >50% space at same electrical performance of larger gullwing packages –
Solutions for very small low-power actuators and low-ohmic switches
– DFN MOSFETs in portable applications –
Key products for load switches in power management units
} DFN2020MD-6 with 1.7 W power capability
replaces larger gullwing packages like SO8,
BODY DIODE
Vout
Vin
SOT223, SOT89, and SOT457
LOAD PATH
P-FET
R1
R2
} DFN1010D-3 with 1 W power capability
replaces SOT457 and SOT23 low RDSon types
on a 85% reduced footprint size
RLOAD
CONTROL N-FET
CONTROL SIGNAL
BODY DIODE
} DFN1006 with 0.7 W power capability
PMXB40UNE
PMXB65UPE
PMDXB950UPE
PMDXB900UNE
PMCXB900UE
PMZB290UN
PMZ250UN
2N7002BKMB
NX3008NBKMB
NX3008PBKMB
PMZB350UPE
Polarity
VDS (V)
RDSon typ (mΩ)
Package
N
P
Dual P
Dual N
Compl.
N
N
N
N
P
P
12
12
20
20
20
20
20
60
30
30
20
40
65
950
900
900/950
290
250
1300
1000
2800
330
DFN1010
DFN1010
DFN1010
DFN1010
DFN1010
DFN1006
DFN1006
DFN1006
DFN1006
DFN1006
DFN1006
Polarity
VDS (V)
RDSon typ (mΩ)
Package
P
Dual P
P + RET driver
Dual P
12
30
30
20
15
70
85
58
DFN2020
DFN2020
DFN2020
DFN2020
Polarity
VDS (V)
RDSon typ (mΩ)
Package
N
N
30
30
12
16.5
DFN2020
DFN2020
replaces a large range of standard packages
like SOT23, SOT323, SOT416, and “1208size” (VEMT3, SOT723 …)
The Ultimate in Miniaturization: DFN1006(B)-3
85% space reduction
Same power dissipation (350 mW)
} 1.0 mm x 0.6 mm, height 0.37 mm (DFN1006(B)-3),
1.2 mm²
solder layout
DFN1010D-3 and DFN1010B-6:
} 1.1 x 1.0 x 0.37 mm
} Single die, with heatsink and dual die, with two
heatsinks
} Tin-plated solderable side pads for single package
} Power dissipation: 1 W (single) and 350 mW (dual)
}R
DSon range down to 50 mΩ and ID up to 3A
Q1
Q2
VBUS
PMU
0.5 mm (DFN1006-3)
} Very low Rds(on) values of less than 0.65mΩ at 2.5 V
PMPB15XP
PMDPB70XP
PMC85XP
PMDPB58UPE
PMDPB58UPE
DFN1006(B)-3:
} Single N- and P-channel MOSFETs
9 mm²
solder layout
Key products for battery switches / charger switches
GND
GND
ESD-protected devices
Key products for DC-DC conversion in Notebooks and Tablets
PMPB11EN
PMPB20EN
DFN2020MD-6 / DFN2020-6:
} 2.0 x 2.0 x 0.65 mm
} Single/dual die, with heatsinks
} Tin-plated solderable side pads for single version
} Power dissipation: 1.7 W (single) and 1.2 W (dual)
} RDSon range down to 10 mΩ and ID up to 13 A
More about NXP
ultra-small MOSFETs
www.nxp.com/ultra-small-mosfets
6
Mobile brochure
Mobile brochure
7
Highest efficiency in smallest packages – NXP low lo ss Schottky diodes and transistors in leadless DFN
Low VF Schottky rectifiers in small and flat leadless packages
– Extremely low VF with low IR, covering a current range of 0.2 – 2 A –
DFN1608D-2 is the smallest package on the market capable of carrying a current of 2 A.
Key features and benefits:
} Space saving ultra-small package size with low height (1.6 x 0.8 x 0.37 mm)
} Low values for VF and IR – ideal for battery powered devices
} IF up to 2 A
} With tin-plated, solderable side pads
} AEC-Q101 qualified
} The best possible protection of the NFC system – made by the global
Low VCEsat Transistors - Keeping power consumption and heat dissipation to a minimum Key product PBSM5240PF: PNP low VCEsat transistor / N-ch. Trench MOSFET combination in DFN2020-6
For slim designs and best-in-class thermal performance to support higher currents and longer lifetimes.
Application areas:
}B
oost converter for LED backlight and 5 V
USB-OTG supply (DC-DC up-conversion)
}W
ireless charging (passive rectification,
efficiency enhancement)
} Logic (low-cost OR gate, AND gate)
} Power (OR-ring of multiple supply voltage)
leader for ESD protection and NFC solutions
> 9 mm² footprint
4 mm2 footprint
Optimization
IF max (A)
VR max (V)
VF max (mV) @
IF max
IR max (mA)
@VR max
LED backlight boost converter
low VF
low VF
low VF
low VF
low IR
low IR
low IR
low IR
0.5
1
1.5
2
0.5
1
1.5
2
20
20
20
20
40
40
40
40
410
415
420
450
590
600
610
660
0.3
0.6
0.9
0.9
0.01
0.02
0.03
0.03
Type number
PBSM5240PF = +50% footprint
reduction, lower height!
Conventional solution (BJT + MOS)
requires two packages
} High collector current gain (hFE) at high IC
} Low-voltage MOSFET driver stage
Key products in DFN1608D-2:
PMEG2005EPK
PMEG2010EPK
PMEG2015EPK
PMEG2020EPK
PMEG4005EPK,
PMEG4010EPK
PMEG4015EPK
PMEG4020EPK
}2
5% better thermal performance due to heat
sink in DFN2020-6 leading to higher currents
and longer lifetimes.
}V
ery low collector-emitter saturation
voltage VCEsat
} High collector current capability IC and ICM
DCin
Applications
} L oad switches
}P
ower management
}C
harging circuits
SWout
FB
DC/DC
controller
T1
PBSM5240PF
Vc
RSense
BATT
PMU
GND
GND
brb672
Sink1
Sink2
Key product BC847QAPN: 45 V, 100 mA general purpose double NPN/PNP
in a 1 x 1 mm package
The first double bipolar transistors in DFN1010B-6 offering tremendous package
size reduction while keeping the same power density compared to SOT363 or
SOT666.
DFN1608D-2 combines improved performance with reduced size
Further single transistors are available in a leadless, ultra small DFN1010D-3
package, the fourth NXP DFN package with visible and solderable sidepads.
I F / VF
Miniaturization
High
Key products as typically used in the charger path of feature phones and entry level smart phones:
Performance
Low
0.37 mm
Small
0.6 mm
1.1 mm
Size
Large
Type number
Package
transistor
polarity
Ptot [max](mW)
VCEO [max](V)
IC [max](A)
VCEsat [max](mV)
[email protected] [max];
IC/IB =10 [typ]
(mΩ)
hFE [min]
fT [typ](MHz)
PBSS5330PA
PBSS230QA
PBSS5330X
PBSS5320X
PBSS301PD
DFN2020-3
DFN1010D-3
SOT89
SOT89
SOT457
PNP
PNP
PNP
PNP
PNP
1250
750
1600
1600
2500
-30
-30
-30
-20
-20
-3
-2
-3
-3
-4
-320
-440
-320
-300
-420
75
170
80
90
50
280
200
200
220
250
165
170
100
100
80
Many more Schottky rectifiers available in ultra-small
DFN1006(D)-2 and DSN0603-2
View complete portfolio
Low VF rectifiers
www.nxp.com/products/diodes/medium_power_schottky_diodes_200_ma
8 Mobile brochure
View complete portfolio
Low VCEsat transistors
www.nxp.com/products/bipolar_transistors/low_vcesat_biss_transistors
Mobile brochure
9
Protection of Near-Field Communication
antenna circuits
Common Mode Filter with integrated
ESD protection for MIPI CSI, DSI
New high-performance, small form factor devices to protect the NFC
antenna terminal
Near-Field Communication (NFC) is the breakthrough technology that allows tags
in posters, check-in signs, and contactless payment terminals to interact with your
mobile phone. The antenna for NFC is integrated into the battery cover or the
battery itself in many cases and is connected to the NFC ICs via small contacts on
the phone. These contacts are an entry point for ESD strikes which are potentially
hazardous to the NFC IC.
The NXP solution offers:
} Bi-directional configuration, allowing operating voltages up to 18 / 24 V
} Low capacitance enabling easy design of the antenna matching circuit
} Very small voltage dependency of the diode capacitance avoiding
intermodulation distortion
} Small form factor packages down to the 0603 (0201 inch) size
} The best possible protection of NFC systems - from the global leader
in ESD protection and NFC
New Common Mode Filters:
Minimizing EMI disturbances, offering stong system protection, outperforming all other solutions
In the world of high-speed differential data lines (e.g. USB, MIPI, HDMI, LVDS), the spectrum of wired data signals overlaps with the
frequencies used in wireless transceiver modules like GSM, WIFI, LTE, and Bluetooth. Electromagnetic interference (EMI) is therefore
almost unavoidable. Careful system design and additional components can help minimize disturbances caused by EMI. Common
mode filters are designed to transmit the desired wire-bound signal without degradation while suppressing the unwanted EMI noise.
No. of protected
lines
PESD18VF1BL
VRWM (V)
1
PESD18VF1BSF
PESD24VF1BL*
Cline max (pF)
0.35
0.30
18
1
PESD24VF1BSF*
Cline typ (pF)
24
0.4
ESD rating max
(kV)
0.50
0.45
10
0.55
10
Configuration
Bi-directional
Bi-directional
Package
Size (mm)
DFN1006-2
1 x 0.6 x 0.47
DSN0603-2
0.6 x 0.3 x 0.3
DFN1006-2
1 x 0.6 x 0.47
VRWM
input ESD rating
IEC 6100-4-2
Channel series
resistance
Package / Size
(mm)
< -24 dB
0.8 pF
5.5 V
15 kV
8 Ohm
DFN2520-9 / 2.5 x 2.0 x 0.5
DFN4020-14 / 4.0 x 2.0 x 0.5
DSN0603-2
0.6 x 0.3 x 0.3
Scc21 (dB)
Scc21 (dB)
0
0
-5
-5
-10
-10
-15
NFC antenna ESD protection – Circuit diagram
0.6
-15
-20
Competitors
-25
Ferrite / Ceramic
-20
Competitors
-25
Silicon
PCMFxDFN1
NFC controller
0.5
Diode capacitance (pF)
3 GHz
Common mode suppression : NXP CMF outperform all Ferrite / Ceramic / Silicon solutions
* In development
Very small variation of diode capacitance versus bias voltage
C_d, typical
0
0
Common Mode
insertion loss
800 MHz 2.4 GHz (typ.)
Number of
protected
line pairs (bidirectional)
2
3
Differential
Mode 3 dB
frequency (typ.)
Number of
protected
line pairs (unidirectional)
PCMF2DFN1
PCMF3DFN1
} Industry-leading bandwidth of Common-Mode suppression for minimized EMI-emission and susceptibility saves time-consuming
searches for EMI sources
}H
igh system-level ESD protection due to deep snapback and low dynamic resistance
} Very thin package: 0.5 mm max. and industry standard footprint
}S
horter time-to-market due to minimized impact on signal integrity and simplified “out-of-the-box“ design
Key products:
Type number
Type name
Key products:
filter circuit
matching circuit
antenna terminal
+ ESD protection
antenna coil
PCMFxDFN1
-30
-30
-35
1E7
1E8
1E9
freq (Hz)
8E9
-35
1E7
1E8
freq (Hz)
1E9
8E9
0.4
0.3
0.2
PCMF3DFN1
CLK_P
CLK_N
0.1
D0_P
-10
-5
0
5
10
15
20
DC bias voltage (V)
LIQUID CRYSTAL
DISPLAY
(LCD)
D1_P
D1_N
FLEX FOIL CONNECTOR
-15
MIPI LANE MODULE
0
-20
FLEX FOIL
D0_N
D2_P
D2_N
More information about
NXP antenna protection
D3_P
More information about
NXP Common Mode
Filters
D3_N
PCMF2DFN1
SYSTEM-ON-CHIP
(SoC)
SUPPLY,
CONTROL
AND BACKLIGHT
aaa-007393
www.nxp.com/products/esd_emi_and_signal_conditioning/application_specific_esd_and_esd_emi_solutions/nfc_antenna_protection/
10
Mobile brochure
Using PCMFDFN1 in a MIPI DSI display interface
www.nxp.com/group/11629
Mobile brochure
11
USB 2.0 OTG protection and EMI filter
High-Speed USB protection
Key product: IP3319CX6
} Very good Common Mode suppression in the GSM/3G/LTE bands
} Very good differential mode pass band
} E xcellent SoC protection against ESD pulses
} Package details: WLCSP, 1.34 x 0.95 x 0.57 mm3
USB 3.0 and USB 2.0 High-Speed (HS) devices: Choose from integrated or discrete solutions
ESD protection devices supporting this standard require very low line capacitance and allows no series resistors in the data lines.
Available in CSP, leadless or plastic packages, NXP offers highly integrated solutions deliver high robustness against ESD pulses
and are easy to route as well as discrete, very flexible and ultra-small solutions.
C2
to USB
controller
αil
(dB)
0
(1)
-6
(2)
-12
-18
(1) Differential pass band, f3dB > 1 GHz
Key products:
(2) Common mode suppression
IP4369CX4 / IP4303CX4
PRTR5V0U2F
IP4282CZ6
} Superior ESD and RF performance
} Small plastic package DFN1006-3
} Small plastic package
} Very small footprint (WLCSP)
} Simple “pass-thru” routing
} Simple “pass-thru” routing
} 0.8 pF line capacitance
} AEC-Q101 qualified
} 0.7 pF line capacitance
A2
A1
B1
B2
-24
C2
+5V
Micro USB
type B
1
-30
105
106
107
108
109
f (Hz)
1010
} 1.0 pF line capacitance
IP3319CX6
C1
USB 2.0
USB CONNECTOR
VBus
Dat+
DatID
HDMI interface protection
A1
A1
This device offers best protection for the various signals of the HDMI
interface and allows a very flexible layout. For the high-speed TMDS lines
PUSB3F96 offers superior system protection with very small capacitance
on each signal line. The lower-speed communication interface can be
protected by dedicated single and dual protection devices that match the
electrical requirements.
B2
D+
IP4369CX4
B1
VBUS
1
6
2
5
3
4
D−
V BUS
D-
A2
A2
B1
Key product: PUSB3F96
D−
USB layout optimazed solution
IP4282CZ6 (SOT886)
Hi-SPEED USB TRANSCEIVER
VBUS
GND
B2
D+
D+
GND
GND
IP4282CZ6
006aac466
IP4303CX4
PUSB3F96
PESD5V0F1BSF
} Industry’s best overall protection for USB 3.0 system chips
} Flexible layout options
} E xtremely low channel capacitance: 0.5 pF (typ)
} Extremely low diode capacitance: 0.25 pF (typ)
} Very low dynamic resistance (less than 0.4 Ω) for both polarities
} Ultra-small DSN0603-2 package (0.6 x 0.3 x 0.3 mm)
} RF-optimized DFN2510A-10 (SOT1176) package (1 x 2.5 x 0.5 mm)
Features
} ESD protection of ±10 kV according to IEC 61000-4-2, level 4 for all
TMDS lines
} TMDS lines with ≤ 0.05 pF matching capacitance between TMDS pairs
} Line capacitance of only 0.5 pF for each differential channel
Audio interface protection (Speaker, Mic,
Headset)
USB On-The-Go (OTG) protection
Key product: PUSBMxVX4-TL series - ideally suited for the protection of micro-USB ports
} Vbus protection with VRWM = 5.5, 12, 15 or 30 V, suitable for a range of charging applications
} 1.6 x 1.6 mm leadless DFN1616-6 package, space saving, industry-standard footprint, easy to place
} 1.1 pF low capacitance ESD protection structure for USB D+, D- and ID
} Ultra-low-clamping ESD protection
} Complies with the YT/D 1591-2006 / 2009 standard (China) and GSMA / OMTP Universal Charging Solution (UCS)
Vbus working voltages of the PUSBM series
Key product: PESD12VV1BL in ultra-small DFN1006-2
} Bi-directional ESD protection diode with 12 V reverse standoff voltage
} Low capacitance of 17 pF (typ.)
} Ideal for protecting speaker lines in portable devices, particularly active boost drivers with
high output voltages
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL




VRWM of 5.5 V for V bus
VRWM of 12 V for V bus
VRWM of 15 V for V bus
Equivalent circuit of the complete
PUSBM device
Read more about NXP
Circuit protection
= outside
connector pin
= internal
connection
VRWM of 30 V for V bus
www.nxp.com/circuit-protection
12
Mobile brochure
Mobile brochure
13
SIM card interface – ESD protection and
EMI filter
Key products: IP4064CX8/LF, IP4364CX8/LF, IP4264CX8-20, IP4264CZ8-40
} 3 -channel SIM card interface integrated RC-filter array
} Integrated 100 Ω/100 Ω/47 Ω series channel resistors
} Suppression of all 2G and 3G mobile phone frequencies
} Downstream ESD protection up to ±15 kV (contact), exceeding
IEC 61000-4-2, level 4 for ultra-robust ESD protection with low clamping voltage
} Available in leadless and wafer-level chip-scale packages with 0.5 or
0.4 mm pitch, simplifying design and saving space
IP4264CZ8 – SIM Application
I/O
CLK
VPP
RST
IP4252CZ12-6
VCC
Strict EMI regulations and system requirements – as specified for mobile phones
– demand filters that reduce the radiated and/or conducted EMI, but which
still comply with the electrical requirements of the interface specification. The
continuing trend in miniaturization of portable appliances implies that interface
devices offering ESD protection and EMI filtering should also, where possible,
integrate biasing circuits or resistors into a single, small-sized package.
VPP
100 nF
brb448
IP4365CX11 – SIM Application
IEC61000-4-2
level 1
protection pins
IEC61000-4-2
level 4
protection pins
R1
R2
B1
NXP’s SD-memory card interface conditioning devices fully support this
continuing trend and offer interface conditioning functions such as:
}H
igh-level ESD protection according the IEC61000-4-2 standard, often
exceeding the highest level 4 specification
}E
MI filtering, suppressing unwanted RF, in combination with SD interface
compliant physical signaling
} Integrated biasing resistor networks to reduce component count and to free
up additional space on the PCB
B3
47
R3
C3
100
D1
D2
D3
A2, C2
008aaa216
IP4264CZ8 – USIM Application
VSIM
D3
CLK
I/O
USB
A1
R1
A3
100
B1
R2
B3
47
C1
R3
C3
100
VCC
GND
RST
SPU
CLK
I/O
D2
D−
SIM/smart card
baseband
A2, C2
008aaa217
Product details
Type number
Cline (pF)
Pitch (mm)
Package
Size (mm)
IP4064CX8
<20 pF
0.5 mm
CSP
1.41 x 1.41 mm
IP4364CX8
<20 pF
0.4 mm
CSP
1.16 x 1.16 mm
IP4365CX11
<10 pF
0.4 mm
CSP
1.16 x 1.56 mm
IP4366CX8
<10 pF
0.4 mm
CSP
1.16 x 1.16 mm
IP4264CZ8
10 pF / 40 pF
0.4 mm
Plastic
1.35 x 1.75 mm
Key products for alternative ESD protection without EMI Filtering
PESD5V0F5UF and PESD5V0F5UV
} Unidirectional fivefold ESD protection array
} Small DFN1006-3, DFN1410-6 and SOT666 plastic packages
} Femtofarad line capacitance of 0.55 pF (typ.)
} AEC-Q101 qualified
PESD5V0V4Ux – SIM Application
I/O
VPP
CLK
RST
to
interface
1
DAT3/CD
DAT2
SET_CLR_CARD_DETECT
(ACMD42)
CLK
VCC(V SD )
50 kΩ
pull-up
CMD
DAT3/CD
DAT3/CD-pull-down
> 270 kΩ,
Exact value depends
on required logic levels
DAT2
IP4340CX15 – Pin configuration and
bump A1
index area
VCC
1
2
3
4
R13
R12
R11
CLK
A
CMD
DATA0
B
DATA1
DATA2
C
DATA3
R10
R9
R1
SDCLK
R2
SDCMD
R3
SDDATA0
R4
SDDATA1
R5
SDDATA2
R6
SDDATA3
D
GND
aaa-003573
aaa-003575
Transparent top view
Key product:
IP4340CX15
} Provides EMI filtering and ESD protection for six channels of an SD card interface
} Pull-up resistors for the data lines already integrated to reduce the PCB area and application size
} 1.56 x 1.56 mm wafer-level chip-scale package (WLCSP), fabricated using monolithic silicon semiconductor technology
} At the connector side terminals, the ESD protection exceeds 15 kV acc. to IEC 61000-4-2 test condition
Type number
Application
Feature
3 dB frequency (MHz)
Package
Size (mm)
IP4340CX15
SD3.0 and 2.0
Small SD3.0 solution
~ 450
WLCSP15
1.56 x 1.56 x 0.5 mm
IP4357CX17
SD 2.0
High attenuation at 800 MHz
~ 190
WLCSP17
1.1 x 2.4 x 0.61 mm
IP4251CZ12-6-TTL
SD 2.0
High attenuation at 800 MHz
~ 300
DFN2514-12 (SOT1167)
2.5 x 1.35 x 0.53 mm
IP4252CZ12-6-TTL
SD 2.0
Low pass band insertion loss
~ 300
DFN2514-12 (SOT1167)
2.5 x 1.35 x 0.53 mm
5
2
GND
3
www.nxp.com/products/esd_emi_and_signal_conditioning/application_specific_esd_and_esd_emi_solutions/
sd_sim_card_and_mmc_esd_protection_and_emi_filter/
14 Mobile brochure
GND
Further products:
Mobile phone SIM card protection
PESD5V0V4Ux product family
}U
nidirectional quadruple ESD protection diode arrays
} Small SMD plastic packages and DFN plastic packages
} Line capacitance of 12 pF / 15 pF (typ.)
DAT0
AUX1 AUX2
D1
D+
SD Memory Card
DAT1
DAT1
DAT0
CLK
CMD
schematic diagram
A3
100
C1
RST
VCC(VSD)
Optional electrical
Card Detect
Pull-up resistors
10 kΩ – 100 kΩ
A1
Key product for SIM card protection with USB connection pins: IP4365CX11
}O
ffering exceptional EMI filtering and ESD protection while adding additional
connector pins for use with USB
} 3-channel SIM card interface integrated RC-filter array
} Additional protection diodes for internal USB connection protection
} Integrated 100 Ω/100 Ω/47 Ω series channel resistors integrated
}D
ownstream ESD protection up to ±15 kV (contact), exceeding
IEC 61000-4-2, level 4
}W
afer-level chip-scale package with 0.4 mm pitch to simplify design and
save space
IP4252CZ16 – Application diagram
GND
VCC
GND
Integrated, small-sized solutions to protect SD- and micro SD-cards
SD-memory card communication is based on an 8-/9-pin interface (clock,
command, 1- or 4-bit data and 2/3 power/GND lines).
host interface
Choose one of the many devices that offer three digital lines and an
additional protection for the supply rail
SD card interface – ESD protection
and EMI filter
4
bra228
Download Application
Note on SD(HD)memory card and MMC
interface cond.
More details about
NXP SIM and SD card
solutions
www.nxp.com/documents/application_note/AN10911.pdf
Mobile brochure
15
Charger interfaces
Wireless charging
Low RDSon is key
In the conventional charger circuit, a ‘battery MOSFET’ is used to disconnect the
battery, e.g. in case of temperature violation, excessive (dis-)charge currents or over-/
under-voltage conditions. A low RDSon value is important in this MOSFET to minimize
losses.
Battery MOSFET in smart phones
Switch-mode
battery charger
Battery MOSFET
e.g. PMPB15XP
Battery voltage
detection
Key product: PMPB15XP – 12 V single P-ch MOSFET
} Very low RDSon of 15 mΩ at VGS = 4.5 V
} Housed in a 0.65 mm flat, small 2 x 2 mm DFN2020MD-6 package with tin-plated
solderable side pads
MOSFETs are also used in the pass element of chargers, which isolates the USB
Vbus line from the internal supply (“USB OTG Vbus protection”). Here, a double
MOSFET in back-to-back configuration can be used.
Key products in DFN2020-6 (SOT1118) a 0.65 mm flat, 2 x 2 mm leadless package
Phone supply
Multi-Standard wireless charging pad
Battery current
detection
In the charger pad MOSFETs drive a current through the windings of a copper
coil to transmit inductive energy to the phone. In the phone itself either
dedicated integrated circuits or MOSFETs are used for synchronous rectification
behind the receiver coil. Additional Schottky diodes can enhance the efficiency
of the rectifier.
PMDPB58UPE
Q1
Q2
VBUS
PMU
GND
Key products:
GND
}Offering best-in-class thermal performance due to extra heat sink
PMDP58UPE – Dual P-ch ESD protected MOSFET
} ESD protected MOSFET of > 2 kV HBM
} Very low RDSon of <58 mΩ at VGS = 4.5 V
} 1.8 V RDSon rating for operation at low voltage gate drive levels
Free the phone from the cable, allow simpler charging
– With highly efficient small-sized MOSFETs and Schottky rectifers –
Today’s smart phones tend to provide limited operating time. Wireless charging
is highly convenient and straightforward: just place the phone on a charger pad
integrated into a desk or work surface (e.g. in the office, at home, or in a coffee
shop).
Very efficient low RDSon MOSFETs in a 2 x 2 mm DFN2020 package with tin-plated solderable side pads
PMDPB70XP – 30 V Dual P-ch MOSFET
} Very low RDSon of 70 mΩ at
Type number
VDS (V)
RDSon typ (mΩ) @ VGS = 4.5 V
Package
N-ch, single
20
12
DFN2020MD-6
DFN2020MD-6
PMPB15XN
N-ch, single
20
15
N-ch, dual, ESD protected
20
85
DFN2020-6
PMPB16XN
N-ch, single
30
16
DFN2020MD-6
PMPB40SNA
N-ch, single
60
40
DFN2020MD-6
PMPB33XP
P-ch, single
20
33
DFN2020MD-6
PMPB48EP
P-ch, single
30
43
DFN2020MD-6
PMDPB85UPE
VGS = 4.5 V
Polarity and configuration
PMPB12UN
Surge protection in Charger interfaces
Very efficient low VF and IR Schottky diodes in ultra small packages with tin-plated solderable side pads
Type number
Protect the battery with strong TVS and Zener diodes
Smart phones with large displays usually come with high capacitance batteries to provide sufficient operating
time for the user. For a reasonable charging time, these phones typically use dedicated charger ICs in
combination with over-voltage protection circuits. While these circuits can disconnect the battery in case of a
permanent over-voltage condition, they can be sensitive to surge events. To protect against this, a TVS diode
is placed at the Vbus line of the USB connector. In addition, a Zener or ESD protection diode can be placed in
parallel to the battery to protect it against short duration over-voltage spikes.
IF max (A)
VR max (V)
VF max (mV) @ IF max
IR max (mA) @VR max
Optimization
Package
0.5
20
410
0.3
low VF
DFN1608D-2
PMEG2010EPK
1
20
415
0.6
low VF
DFN1608D-2
PMEG2015EPK
1.5
20
420
0.9
low VF
DFN1608D-2
PMEG2020EPK
2
20
450
0.9
low VF
DFN1608D-2
PMEG4005EPK.
0.5
40
590
0.01
low IR
DFN1608D-2
PMEG4010EPK
1
40
600
0.02
low IR
DFN1608D-2
PMEG4015EPK
1.5
40
610
0.03
low IR
DFN1608D-2
PMEG4020EPK
2
40
660
0.03
low IR
DFN1608D-2
PMEG2010BELD
1
20
490
0.2
low VF
DFN1006D-2
PMEG3005BELD
0.5
30
500
0.5
low VF
DFN1006D-2
PMEG2005EPK
Key products:
Wireless Charging Application
} PTVS12VS1UR, 12 V, 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W FlatPower package (2.6 x 1.7 x 1 mm)
} PTVS26VS1UR, 16 V, 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W FlatPower package (2.6 x 1.7 x 1 mm)
} BZX884-C5V6, 16 V, Low-power voltage regulator diode in an ultra small DFN1006-2 plastic package
} TDZ5V6J: 5.6 V General-purpose Zener diode in a SOD323F very small and flat lead plastic package
Download application
Vbus /+5V
TVS diode
over-voltage
protection
circuit
power
management
unit
Zener diode
Vbat
Charger station
GND
www.nxp.com/documents/application_note/AN10910.pdf
16
Read more about Wireless
Charging of Mobile
Devices
data
Micro USB
1
power
note about how to protect
a mobile device charger
Mobile brochure
Mobile phone
www.nxp.com/news/whats-cooking-in-rd/wireless-charging.html
Mobile brochure
17
(SOT617)
5.0 x 5.0 x 1.0
DFN5050-32
(SOT873-1)
3.3 x 3.3 x 1.0
DFN3333-8
(SOT1220)
2.0 x 2.0 x 0.62
DFN2020MD-6
(SOT1061)
2.0 x 2.0 x 0.62
DFN2020-3
Download the application guide for LDOs & DC-to-DC buck converter for power management
solutions in portable devices
www.nxp.com/documents/brochure/939775017406.pdf
The largest supplier of discrete leadless packages
(SOT1168)
3.3 x 1.35 x 0.53
DFN3314-16
(SOT985)
3.3 x 1.35 x 0.48
DFN3314U-16
(SOT1159)
3.3 x 1.2 x 0.48
DFN3312-16
(SOT1167)
2.5 x 1.35 x 0.53
DFN2514-12
(SOT984)
2.5 x 1.35 x 0.48
DFN2514U-12
(SOT1158)
2.5 x 1.2 x 0.48
DFN2512-12
(SOT1197)
2.6 x 2.6 x 0.48
DFN2626-10
(SOT1333)
2.5 x 2.0 x 0.48
DFN2520-9
(SOT1176)
2.5 x 1.0 x 0.48
DFN2510A-10
DFN2110-9
DFN1712-8
(SOT1157)
1.7 x 1.2 x 0.48
(SOT983)
1.7 x 1.35 x 0.48
DFN1714U-8
(SOT1166)
1.7 x 1.35 x 0.52
DFN1714-8
(SOT1178)
2.1 x 1.0 x 0.48
(SOT1118)
2.0 x 2.0 x 0.62
DFN2020-6
(SOT1189)
1.6 x 1.6 x 0.48
DFN1616-6
(SOT886)
1.45 x 1.0 x 0.48
(SOT1194)
1.0 x 1.0 x 0.52
DFN1010C-4
(SOT1202)
1.0 x 1.0 x 0.33
DFN1010E-6
(SOT1216)
1.0 x 1.0 x 0.37
DFN1010B-6
(SOT891)
1.0 x 1.0 x 0.48
DFN1010-6
DFN1410-6
(SOD1608)
1.6 x 0.8 x 0.37
DFN1608D-2
(SOT1215)
1.1 x 1.0 x 0.37
DFN1010D-3
(SOD882)
1.0 x 0.6 x 0.48
(SOT883)
1.0 x 0.6 x 0.48
DFN1006-2
DFN1006-3
(SOT883B)
1.0 x 0.6 x 0.37
(SOD962)
0.6 x 0.3 x 0.3
DSN0603-2*
(SOD882D)
1.0 x 0.6 x 0.37
DFN1006D-2
DFN1006B-3
4 - 6 Pins
Medium power
suited for mobile devices. Check out these documents to learn more:
8 - 10 Pins
2 - 3 Pins
Ultra small
NXP also offers a broad range of power management and logic solutions ideally
Download the leaflet about SD 3.0 signal conditioners IP4755CZ24 and IP4855CX25
www.nxp.com/documents/leaflet/939775017446.pdf
Download the AXP Logic family leaflet. Advanced, extremely-low voltage and power logic
solutions – designed for portable applications:
www.nxp.com/documents/leaflet/75017461.pdf
Selection Guides – Catalog pdf versions to download
Discrete Semiconductors Selection Guide
www.nxp.com/discrete_selection_guide
General Purpose Logic solutions
www.nxp.com/documents/brochure/75017351.pdf
Contact to sales offices and distributors
Dedicated and skilled sales and distribution teams provide support on a regional level:
http://www.nxp.com/profile/sales
Download NXP App – free app for iPhone, iPad, iPod Touch or Android
This free NXP application allows engineers to search, buy and share more than 10,000 products parts from
NXP‘s product portfolio on your iPhone, iPad and iPod Touch or Android:
http://www.nxp.com/news/mobile-app.html
12 - 32 Pins
Our extensive Discrete Flat No-leads portfolio
*Discrete Silicon No-leads
Document order number: 9397 750 17441
Support material
Mobile brochure
19