UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design and low cost-effectiveness. This type of package is generally applied in applications in the commercial-industrial field especially suitable for the power consumption at approximately 50W. Because of its low package cost and low thermal resistance, this package is widely applied in the industry field. FEATURES * Fast switching speed * P-channel MOSFET * Repetitive avalanche rated * Simple drive requirements * Ease of paralleling SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-484.E UF9640 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF9640L-TA3-T UF9640G-TA3 -T UF9640L-TF3-T UF9640G-TF3 -T UF9640L-TN3-R UF9640G-TN3 -R UF9640L-TQ2-T UF9640G-TQ2 -T UF9640L-TQ2-R UF9640G-TQ2 -R Note: Pin Assignment: G: Gate D: Drain S: Source Power MOSFET Package TO-220 TO-220F TO-252 TO-263 TO-263 1 G G G G G Pin Assignment 2 3 D S D S D S D S D S Packing Tube Tube Tape Reel Tube Tape Reel MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-484.E UF9640 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET 3 of 8 QW-R502-484.E UF9640 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Gate to Source Voltage Avalanche Current (Note 1) Continuous Drain Current Pulsed (Note 1) SYMBOL VGSS IAR ID IDM RATINGS ±20 -11 -11 -44 UNIT V A A A Single Pulsed (Note 2) EAS 700 mJ Repetitive (Note 1) EAR 13 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt -5.0 V/ns TO-220/TO-263 73 Power Dissipation PD W TO-220F 38 TO-252 48 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Avalanche Energy THERMAL DATA PARAMETER TO-220/TO-220F TO-263 Junction-to-Ambient TO-252 TO-220/TO-263 Junction-to-Case TO-220F TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC PATINGS 62.5 110 1.71 3.31 2.6 UNIT °C/W °C/W 4 of 8 QW-R502-484.E UF9640 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Source Inductance SWITCHING PARAMETERS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time SYMBOL TEST CONDITIONS V(BR)DSS VGS=0V, ID=-250µA ID=-1mA, ∆V(BR)DSS/∆TJ Referenced to 25°C IDSS VDS=-200V, VGS=0V VGS=+20V IGSS VGS=-20V VGS(TH) RDS(ON) gFS CISS COSS CRSS LS QG QGS QGD tD(ON) tR tD(OFF) tF VDS=VGS, ID=-250µA VGS=-10V, ID=-6.6A (Note 4) VDS=-50V, ID=-6.6A (Note 4) VDS=-25V,VGS=0V,f=1.0MHz MIN TYP -200 V -0.20 -2.0 V/°C -100 +100 -100 µA nA nA -4.0 0.50 V Ω S 4.1 1200 370 81 7.5 pF pF pF nH 44 7.1 27 VDS=-160V, VGS=-10V, ID=-11A (Note4) VDD=-100V,ID=-11A,RG=9.1Ω, RD=8.6Ω (Note 4) MAX UNIT 14 43 39 38 nC nC nC ns ns ns ns Between lead, 6mm (0.25in.) from package and center of 4.5 nH die contact SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS -11 A Maximum Body-Diode Pulsed Current ISM -44 A Drain-Source Diode Forward Voltage VSD IS =-11A, VGS=0V, TJ=25°C -5.0 V Body Diode Reverse Recovery Time tRR IF=-11A, TJ=25°C 250 300 ns dI/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR 2.9 3.6 μC Intrinsic turn-on time is neglegibal (turn-on is dominated Forward Turn-On Time tON by LS+LD) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. VDD=-50V, Starting TJ=25°C, L=8.7mH, RG=25Ω, IAS=-11A 3. ISD ≤-11A, di/dt ≤150A/μs, VDD ≤BVDSS, Starting TJ=150°C 4. Pulse Test : Pulse width≤300μs, Duty cycle≤2% Internal Drain Inductance LD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-484.E UF9640 Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-484.E UF9640 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 1 4 2 3 5 Gate Threshold Voltage, -VTH (V) Drain Current, -ID (A) Drain Current, -ID (A) 0 50 100 150 200 250 300 Drain-Source Breakdown Voltage, -BVDSS (V) Maximum Safe Operating Area Operation in this Area is United by RDM Drain Current, -ID (A) 102 100µs 10 1 100 1ms Notes: 1.TC=25°C 2.TJ=150°C 3.Single Pulse 10-1 0 10 10ms 102 101 Drain-Source Voltage, -VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-484.E UF9640 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-484.E