Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF9640
Power MOSFET
11 Amps, 200 Volts
P-CHANNEL POWER MOSFET

DESCRIPTION
The UF9640 is a P-channel Power MOSFET that developed by
UTC’s advanced technlogy. The device has an advantage of
including fast switching, low on-resistance, ruggedized device design
and low cost-effectiveness.
This type of package is generally applied in applications in the
commercial-industrial field especially suitable for the power
consumption at approximately 50W. Because of its low package cost
and low thermal resistance, this package is widely applied in the
industry field.

FEATURES
* Fast switching speed
* P-channel MOSFET
* Repetitive avalanche rated
* Simple drive requirements
* Ease of paralleling

SYMBOL
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UF9640

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF9640L-TA3-T
UF9640G-TA3 -T
UF9640L-TF3-T
UF9640G-TF3 -T
UF9640L-TN3-R
UF9640G-TN3 -R
UF9640L-TQ2-T
UF9640G-TQ2 -T
UF9640L-TQ2-R
UF9640G-TQ2 -R
Note: Pin Assignment: G: Gate D: Drain S: Source

Power MOSFET
Package
TO-220
TO-220F
TO-252
TO-263
TO-263
1
G
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
D
S
Packing
Tube
Tube
Tape Reel
Tube
Tape Reel
MARKING
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UF9640
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Power MOSFET
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UF9640

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Gate to Source Voltage
Avalanche Current (Note 1)
Continuous
Drain Current
Pulsed (Note 1)
SYMBOL
VGSS
IAR
ID
IDM
RATINGS
±20
-11
-11
-44
UNIT
V
A
A
A
Single Pulsed (Note 2)
EAS
700
mJ
Repetitive (Note 1)
EAR
13
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
-5.0
V/ns
TO-220/TO-263
73
Power Dissipation
PD
W
TO-220F
38
TO-252
48
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Avalanche Energy

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-263
Junction-to-Ambient
TO-252
TO-220/TO-263
Junction-to-Case
TO-220F
TO-252
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
PATINGS
62.5
110
1.71
3.31
2.6
UNIT
°C/W
°C/W
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ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
SYMBOL
TEST CONDITIONS
V(BR)DSS
VGS=0V, ID=-250µA
ID=-1mA,
∆V(BR)DSS/∆TJ
Referenced to 25°C
IDSS
VDS=-200V, VGS=0V
VGS=+20V
IGSS
VGS=-20V
VGS(TH)
RDS(ON)
gFS
CISS
COSS
CRSS
LS
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=VGS, ID=-250µA
VGS=-10V, ID=-6.6A (Note 4)
VDS=-50V, ID=-6.6A (Note 4)
VDS=-25V,VGS=0V,f=1.0MHz
MIN
TYP
-200
V
-0.20
-2.0
V/°C
-100
+100
-100
µA
nA
nA
-4.0
0.50
V
Ω
S
4.1
1200
370
81
7.5
pF
pF
pF
nH
44
7.1
27
VDS=-160V, VGS=-10V,
ID=-11A (Note4)
VDD=-100V,ID=-11A,RG=9.1Ω,
RD=8.6Ω (Note 4)
MAX UNIT
14
43
39
38
nC
nC
nC
ns
ns
ns
ns
Between lead, 6mm (0.25in.)
from package and center of
4.5
nH
die contact
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-11
A
Maximum Body-Diode Pulsed Current
ISM
-44
A
Drain-Source Diode Forward Voltage
VSD
IS =-11A, VGS=0V, TJ=25°C
-5.0
V
Body Diode Reverse Recovery Time
tRR
IF=-11A, TJ=25°C
250
300
ns
dI/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
QRR
2.9
3.6
μC
Intrinsic turn-on time is neglegibal (turn-on is dominated
Forward Turn-On Time
tON
by LS+LD)
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. VDD=-50V, Starting TJ=25°C, L=8.7mH, RG=25Ω, IAS=-11A
3. ISD ≤-11A, di/dt ≤150A/μs, VDD ≤BVDSS, Starting TJ=150°C
4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
Internal Drain Inductance
LD
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UF9640

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
250
200
200
150
150
100
100
50
50
0
0
0
1
4
2
3
5
Gate Threshold Voltage, -VTH (V)
Drain Current, -ID (A)
Drain Current, -ID (A)
0
50
100 150 200 250 300
Drain-Source Breakdown Voltage, -BVDSS (V)
Maximum Safe Operating Area
Operation in this Area is United by RDM
Drain Current, -ID (A)
102
100µs
10
1
100
1ms
Notes:
1.TC=25°C
2.TJ=150°C
3.Single Pulse
10-1 0
10
10ms
102
101
Drain-Source Voltage, -VDS (V)
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UF9640
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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