May 1998 A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear

DESIGN FEATURES
A 7ns, 6mA, Single-Supply
Comparator Fabricated on Linear’s
6GHz Complementary Bipolar Process
by Jim Williams and Brian Hamilton
Introduction
The LT1394 is an ultrafast (7ns), low
power (6mA), single-supply comparator designed to operate on either 5V
or ±5V supplies. It has a maximum
offset voltage of 2.5mV, complementary TTL compatible outputs and
output latch capability. The LT1394
is the first product made with Linear
Technology’s 6GHz complementary
bipolar technology. This fine-line
geometry process results in a product
with dramatically improved speed and
power compared to industry-standard
comparators developed in slower NPNonly technologies.
These features combine to make
the LT1394 well suited for applicaVCC
I1
I2
I3
I4
D15
VCC
VEE
D2
R4
tions such as high performance NTSC
crystal oscillators, single-supply voltage-to-frequency converters and high
speed, high accuracy level detectors.
The LT1394 is offered in SO-8 and is
pin compatible with the industrystandard LT1016 and L T1116
comparators.
Circuit Description
A simplified schematic of the LT1394
can be seen in Figure 1. There are
differential inputs (+IN/–IN), differential outputs (OUT/OUT), a latch
input (LATCH) and three power supply
pins (VEE, VCC and GND). The circuit
topology consists of a differential input
R3
D1
R6
I5
R5
Q8
Q2
D17
VEE
D11
I7
R9
R11
R12
Q12
Q1
Q6 Q5
VCC
R8
Q11
Q7
D16
IN–
I6
stage, a level-shifting gain stage, a
latch stage and complementary output stages. The complementary
output stages offer improved flexibility for the user; the latch stage provides
superior sampling accuracy of the
input signal without the need for an
external latch.
The input stage of the LT1394 uses
a PNP differential pair (Q1–Q2) with
Schottky diodes in the emitters (D1–
D2) and resistive loads (R1–R2). The
Schottky diodes in series with the
emitters allow differential input voltages that are greater than the
base-emitter breakdown of the input
transistors. Two additional Schottky
D9
D4
Q13
D12
Q14
D10
D18
D3
IN+
Q10 Q9
Q4
D19
Q3
VEE
Q34
Q30
D8
Q15 Q16
Q35
Q21
Q24 Q25
R7
VCC
R10
Q31
Q22
D25
OUT
D5
VEE
D6
D27
Q19
VCC
R2
R1
D7
D26
VCC
I8
I9
I10
I11
I12
Q28
Q23
OUT
Q32
I13
Q17
Q18
Q20
Q26
Q27
D28
Q29
D20
VEE
GND
VCC
D21
D22
VEE
Q33
LATCH
D23
VCC
Authors can be contacted
at (408) 432-1900
VEE
D24
VEE
1394_01.eps
Figure 1. LT1394 simplified schematic
20
Linear Technology Magazine • May 1998
DESIGN FEATURES
diodes (D11–D12) prevent output
phase reversal when either input is
taken far enough below VEE to forward bias the base-collector junction
of its corresponding PNP input
transistor. To allow single-supply operation, the input stage has been
designed to have small voltage swings
across load resistors R1 and R2. This
ensures that the input PNPs will not
saturate with the LT1394 inputs at
VEE.
The signal path remains differential as it is buffered and level shifted
via transistors Q3–Q4 and diodes D3–
D4. The level shift prevents current
source I8 from saturating. The second
gain stage, comprising transistors Q5–
Q6 and resistors R3–R4, takes
additional gain while level shifting
the signal back to VCC. The differential output of the second gain stage is
buffered by transistors Q7–Q8, which
then drive the latch stage.
In the latch stage, transistors Q9–
Q10 and resistors R5–R6 act as a
third gain stage. Q11–Q12 buffer the
signal at resistors R5–R6, driving
another differential pair (Q13–Q14).
Q13 and Q14, when activated, provide positive feedback to resistors
R5–R6, creating the latch. When the
LATCH pin is low, the LT1394 is in
flow-through or GAIN mode. Current
I11 is steered through Q34, activating
the Q9–Q10 differential pair. When
the LATCH pin is high, the LT1394 is
in LATCH mode. Current I11 is steered
through Q35, activating the Q13–Q14
differential pair. The output of the
gain/latch stage has additional level
shifting from the emitters of transistors Q11–Q12 via diodes D9–D10.
This level shifting prevents the output stage current sources I6 and I7
from saturating.
The LT1394 provides complementary outputs by using two identical
output stages connected in opposite
phases. Examining the output circuitry for the OUT pin, a PNP
differential pair (Q15–Q16) is driven
from the outputs of the latch stage.
When I6’s current is steered through
Q16, it drives R7 and the base of Q19.
R7 improves switching speed by
reducing the gain of the differential
Linear Technology Magazine • May 1998
pair Q15–Q16 and lowering the
impedance at the base of Q19. Q19’s
emitter current then drives the base
of Q23, turning it on until the OUT
pin has been pulled low and Q23’s
Schottky clamp diode has turned on.
Conversely, if I6’s current is steered
through Q15, it allows R8 to pull up
the Darlington-connected output
transistors Q21 and Q22, bringing
the OUT pin high. For faster output
switching times, Q15’s collector current flows into the Q17/Q18/Q20
current mirror. Q20’s collector current helps turn off Q23, whereas the
collector current of Q18 helps turn
off Q19.
Linear Technology’s
6GHz Complementary
Bipolar Technology
Linear Technology’s 6GHz complementary bipolar technology (6GHz
ComBi) features vertical NPN and PNP
transistors with similar frequency
response and gain characteristics.
Both the NPN and PNP transistors
feature polysilicon emitters for
improved gain, a collector-to-emitter
breakdown voltage (BVCEO) greater
than 12V and a unity gain frequency
(fT) of 6GHz. The PNP transistors have
a nominal current gain (β) of about
45, while the NPNs have a β of
about 100.
In addition to the transistors, the
6GHz ComBi technology includes
diode, resistor and capacitor structures. Schottky barrier diodes with
low parasitic capacitance and high
breakdown voltage are included for
high speed voltage clamping and
breakdown protection of transistors.
Low parasitic capacitance polysilicon
resistors are included for use in high
speed signal paths. High resistivity
diffused resistors are used for biasing
and low power circuitry. Polysiliconoxide-metal capacitors offer low
parasitic capacitance, high capacitance density and low series resistance
for good high frequency performance.
When compared to a typical 30V
complementary bipolar process, the
reduction of transistor BVCEO from
30V to 12V has many benefits for
applications that do not require higher
supply voltages. Dramatically reduced
depletion widths within the transistor allow a 50% decrease in area. This
area reduction improves speed by
lowering parasitic capacitances associated with the transistor. The reduced
voltage requirement also allows a thinner, richer epitaxial (epi) region. This
change to the epi region dramatically
reduces the collector resistance of the
transistors, resulting in smaller
5V
47k*
1N4148
CSELECT
0.05µF
(SEE TEXT)
1M
1M
5V
2k
390Ω
100pF
MV-209
VARACTOR
DIODE
1M*
LT1004-2.5
3.9k*
VIN
0V TO 5V
1k*
1M
Y1**
15pF
100pF
+
LT1394
–
FREQUENCY
OUTPUT
2k
200pF
AN70 F51
* 1% FILM RESISTOR
** NORTHERN ENGINEERING LABS C-2350N-14.31818MHz
Figure 2. A 4× NTSC subcarrier voltage tunable crystal oscillator; tuning range and bandwidth
accommodate a variety of phase-locked loops.
21
DESIGN FEATURES
9
5V
14.3217MHz
FREQUENCY DEVIATION (kHz)
8
82Ω
7
5V
6
+
4.7µF
Q3
5
4.7k
14.31818MHz
Q1
10pF †
4
Q2
3
Q4
2
LT1004-2.5
1
INPUT
0V TO 2.5V
14.3140MHz
0
0
1
3
2
INPUT VOLTAGE (V)
4
15k*
10k
82pF
5
AN70 F52
Figure 3. Control voltage vs output frequency
for Figure 2; tuning deviation from the center
frequency exceeds ±240ppm.
Q
+
LT1394
Q
–
FREQUENCY
OUTPUT
= 2N2369 UNLESS
NOTED
8pF
1k
= 1N4148
= 1N5712
transistors for a given current level.
10k
1M
= 74HC04
Q5
With this significant reduction in tran2N2222
1000pF
* 1% FILM RESISTOR
sistor size, interconnects using a single
† POLYPROPYLENE, 5%
metallization layer becomes much
more difficult and would generate
Figure 4. This simple charge pump–based 10MHz voltage-to-frequency converter has 40dB
significant parasitic capacitance.
dynamic range and operates from a 5V supply.
Because of this, the 6GHz ComBi
The resistors at the LT1394’s posi- so that a 0V to 5V drive provides a
process utilizes two levels of
tive input set a DC bias point of reasonably symmetric, broad tuning
metallization.
840mV. The 2kΩ– 200pF path sets up range around the 14.31818MHz cenApplications
phase-shifted negative feedback, put- ter frequency. The capacitor labeled
ting the DC output in the active region CSELECT sets the tuning bandwidth. It
4× NTSC Voltage-Tunable
with a gain of 35 at the oscillation should be picked to complement loop
frequency. The crystal’s path pro- response in phase-locking applicaCrystal Oscillator
The first of three representative vides resonant positive feedback and tions. Figure 3 is a plot of frequency
applications for the LT1394 can be stable oscillation occurs. The varac- deviation versus tuning input voltage.
seen in Figure 2. This circuit is a tor diode is biased from the tuning Tuning deviation from the 4× NTSC
crystal oscillator with voltage tuning input. The tuning network is arranged 14.31818MHz center frequency exof the output frequency. This applica5V
tion makes use of the LT1394’s high
+
speed, complementary outputs and
A2
200pF
1/2 LT1126
single-supply 5V operation. Such volt2k
–
10k
age controlled crystal oscillators
(VCXO) are often employed where
slight variation of a stable carrier is
200Ω
required. This example is specifically
intended to provide a 4× NTSC sub10k
–
carrier tunable oscillator suitable for
A3
1/2 LT1126
phase locking.
AN70 F55
+
A= 0.1V/DIV
–5V
2k
B = 2V/DIV
200pF
5V
+INPUT
C = 1V/DIV
–INPUT
D = 10mA/DIV
20ns/DIV
+
+
1µF
1k
+
A1
LM733
–A = 100
–
LT1394
OUTPUT
–
1µF
1k
–5V
AN70 F60
Figure 5. Waveforms for the 10MHz voltage-to-frequency
converter; charge pump–based feedback provides linearity
and fast response to input.
22
Figure 6. Parallel preamplified paths allow 18ns response to 500µV
overdrive.
Linear Technology Magazine • May 1998
DESIGN FEATURES
A = 1mV/DIV
B = 0.1V/DIV
(AC-COUPLED)
C = 0.1V/DIV
A = 1mV/DIV
D = 0.1V/DIV
B = 1V/DIV
E = 5V/DIV
10ns/DIV
5µs/DIV
Figure 7. 500µV input (Trace A) is split into wideband and
low frequency gain paths (Traces B and C) and recombined
(Trace D). Trace E is the level-detector output.
Figure 8. Parallel-path level detector shows 18ns response
(Trace B) to 500µV overdrive (Trace A).
18ns 500µV Level Detector
ceeds ±240ppm for a 0V to 5V tuning capacitor at the input via the Q1–
range.
10pF route (Trace D). This current
removal resets the LT1394’s positive
Simple 10MHz
input ramp to a potential slightly
Single-Supply V/F Converter
below ground, forcing the Q output
A second application for the LT1394 low and the paralleled inverters high.
is shown in Figure 4. It is a simple The 8pF capacitor at the LT1394’s
10MHz single-supply voltage-to-fre- inverting output furnishes AC posiquency converter that makes use of tive feedback to the negative input
the LT1394’s speed, single-supply (Trace C). This ensures that the Q
operation and complementary out- output remains high long enough for
puts. A 0V to 2.5V input produces a a complete discharge of the 10pF
0Hz to 10MHz output with 40dB of capacitor. The Schottky diode predynamic range, 1% linearity and 400 vents the LT1394’s input from being
ppm/°C gain drift. Power supply driven outside its negative common
rejection is 0.5% for 4.75V to 5.25V mode limit. When the 8pF capacitor’s
feedback decays, the LT1394 again
supply excursions.
To understand circuit operation, switches and the entire cycle repeats.
assume the LT1394’s positive input The oscillation frequency depends
is slightly below its negative input. entirely upon the input-derived curThe circuit’s input voltage causes a rent. The LT1004 is the circuit’s
positive-going ramp at the com- voltage reference, with Q1 and Q2
parator’s positive input (Trace A, temperature compensating Q3 and
Figure 5). The Q output is low, forcing Q4.
Start-up or overdrive can cause
the CMOS inverter outputs high. This
the
circuit’s AC-coupled feedback to
allows current flow from diode Q1’s
latch.
If this occurs, the LT1394’s
collector, through the CMOS inverter
output
goes high, causing the paralsupply pin, to the 10pF capacitor. The
leled
inverters
to go low. After a time
4.7µF capacitor provides high fredetermined
by
the 1MΩ–1000pF RC,
quency bypass, maintaining low
the
associated
lone
inverter goes high.
impedance at Q1’s collector. Diode
This
lifts
the
LT1394’s
negative input
connected Q3 provides a path to
and
grounds
the
positive
input with
ground. The voltage to which the 10pF
Q5,
initiating
normal
circuit
action.
capacitor charges is a function of
To
calibrate
this
circuit,
apply
2.5V
Q1’s collector potential and Q3’s drop.
and
adjust
the
10k
potentiometer
for
When the ramp at the comparator’s
a
10MHz
output.
positive input goes high enough, the
Q output goes high and the paralleled
inverters switch low (Trace B). This
action pulls current from the 82pF
Linear Technology Magazine • May 1998
The ultimate limitation on comparator sensitivity is available gain.
Unfortunately, increasing gain invariably involves giving up speed. The
gain vs speed trade-off in fast comparators is usually a practical
compromise designed to satisfy most
applications. Some situations, however, require more sensitivity (that is,
higher gain) with minimal effect on
speed. Figure 6’s circuit adds a differential preamplifier ahead of the
LT1394, increasing gain. This permits
500µV comparisons in 18ns. A parallel-path DC stabilization approach
eliminates preamplifier drift as an
error source. A1 is the differential
amplifier, operating at a gain of 100.
Its output is AC coupled to the LT1394.
A1 has poorly defined DC characteristics, necessitating some form of DC
correction. A2 and A3, operating at a
differential gain of 100, provide this
function. They differentially sense a
band-limited version of A1’s inputs
and feed DC and low frequency
amplified information to the comparator. The low frequency roll-off of A1’s
signal path complements A2–A3’s high
frequency roll-off. The summation of
these two signal channels at the
LT1394’s inputs results in flat
response from DC to high frequency.
Figure 7 shows waveforms for the
high sensitivity level detector. Trace A
is a 500µV overdrive on a 1mV step
applied to the circuit’s positive input
(negative input grounded). Trace B
shows the resulting amplified step at
A1’s positive output. Trace C is A2’s
23
DESIGN FEATURES
1100
Conclusion
1000
Innovative circuit design, coupled
with Linear Technology’s 6GHz
complementary bipolar process
simultaneously achieves the seemingly contradictory goals of high speed
and low power. The LT1394 is easy to
use, thanks to its single-supply
capability and complementary outputs. Additional LT1394 applications
appear in the forthcoming Linear
Technology Application Note, A Seven
Nanosecond Comparator for Single
Supply Operation.
900
OVERDRIVE (µV)
band-limited output. A1’s wideband
output combines with A2’s DC-corrected information to yield the correct,
amplified composite signal at the
LT1394’s positive input in Trace D.
The LT1394’s output is Trace E. Figure 8 details circuit propagation delay.
The output responds in 18ns to a
500µV overdrive on a 1mV step. Figure 9 plots response time versus
overdrive. As might be expected,
propagation delay decreases at higher
overdrives. A1’s noise limits usable
sensitivity.
800
700
600
500
15
16
17
RESPONSE TIME (ns)
18
AN70 F68
Figure 9. Response time vs overdrive for
the composite level detector
LTC1401/LTC1404, continued from page 19
0
1.0
–40
–60
–80
–100
–120
0
60
120
180
FREQUENCY (kHz)
240
300
1.0
UNIPOLAR INL ERROR (LSB)
BIPOLAR AMPLITUDE (dB)
–20
UNIPOLAR DNL ERROR (LSB)
fSAMPLE = 600kHz
fIN = 298.68kHz
SINAD = 71dB
THD = –84dB
0.5
0
–0.5
–1.0
0
512 1024 1536 2048 2560 3072 3584 4096
0.5
0
–0.5
–1.0
0
512 1024 1536 2048 2560 3072 3584 4096
CODE
1401_06a.EPS
Figure 6a. LTC1404 FFT
CODE
1401_06b.EPS
Figure 6b. LTC1404 DNL error
1401_06c. EPS
Figure 6c. LTC1404 INL error
Applications
The LTC1401 and LTC1404 will find
applications in telecommunications,
digital signal processing, portablecomputer data acquisition boards and
high speed or multiplexed data
acquisition.
In telecommunication applications
such as HDSL (high-bit-rate digital
subscriber line interface), high speed
and low power dissipation are a must
because the systems are usually powered by the phone line itself. Excellent
dynamic performance is required of
the ADC’s sample-and-hold. The serial
interface minimizes the number of
signal lines that must be routed,
thereby saving significant board
24
space. The 600ksps LTC1404, with
its SO-8 footprint, is an excellent
choice for HDSL applications. At
584ksps, with 2B1Q coding, the
LTC1404 receives at 2.048Mbps over
two wires.
Another common use of ADCs is in
data acquisition applications. System designers have always faced
problems in optimizing data acquisition applications for speed, size, power
and cost, especially in the case of
portable designs. The high sample
rate, the high level of functional integration and the low cost of these
converters make them ideal choices
for these applications. The LTC1401
and LTC1404 can be easily interfaced
to a low cost MUX (for example, a
CD4051, 74HC4051 or LTC1391)
through their high impedance inputs.
The high input impedance of these
ADCs eliminates the need for a buffer
between the MUX and the ADC,
resulting in savings of both cost and
board space.
Conclusion
The new LTC1401 and LTC1404 come
with full ADC performance and an
easy-to-use serial interface. These
complete, stand alone, high speed,
low power devices will simplify the job
of system designers.
Linear Technology Magazine • May 1998