Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF3710
Power MOSFET
57A, 100V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UF3710 uses advanced process technology to
provide excellent RDS(ON), low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or
in PWM applications.
„
FEATURES
* RDS(ON) = 23mΩ @VGS = 10 V
* Ultra low gate charge ( typical 130 nC )
* Low reverse transfer Capacitance ( CRSS = typical 72 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF3710L-TA3-T
UF3710G-TA3-T
UF3710L-TQ2-T
UF3710G-TQ2-T
UF3710L-TQ2-R
UF3710G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-220
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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QW-R203-036.E
UF3710
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
VGSS
±20
V
Drain-Source Voltage
VDSS
100
V
Continuous (VGS=10V)
ID
57
Drain Current
A
Pulsed (Note 2)
IDM
230
Avalanche Current (Note 2)
IAR
57
A
Repetitive(Note 2)
EAR
20
Avalanche Energy
mJ
Single Pulsed(Note 3)
EAS
1060 (Note 4)
Power Dissipation
PD
165
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=0.65mH, RG=25Ω, IAS=57A, VGS=10V
4. This is a typical value at device destruction and represents operation outside rated limits.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62
0.75
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BVDSS
IDSS
IGSS
△BVDSS/△TJ
VGS(TH)
RDS(ON)
gFS
CISS
COSS
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN TYP MAX UNIT
VGS=0V, ID=250μA
100
V
VDS=100V, VGS=0V
25
μA
VGS=±20V, VDS=0V
±100 nA
ID=1mμA,Referenced to 25℃
0.13
V/°C
VDS=VGS, ID=250μA
VGS=10V, ID=28A (Note)
VDS=25V, ID=28 A
VDS=25V, VGS=0V, f =1MHz
2.0
4.0
23
32
3130
410
72
V
mΩ
S
pF
pF
pF
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UF3710
„
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=80V, ID=28A, VGS=10V
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=50V, ID=28A, RG=2.5Ω
VGS=10V (Note)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=28A, VGS=0V (Note)
Maximum Continuous Drain-Source Diode
IS
MOSFET symbol showing
Forward Current
the integral reverse P-N
Maximum Pulsed Drain-Source Diode
junction diode.
ISM
Forward Current
Body Diode Reverse Recovery Time
trr
IF=28A, dI/dt=100A/μs (Note)
Body Diode Reverse Recovery Charge
QRR
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
130
26
43
nC
nC
nC
ns
ns
ns
ns
1.2
V
57
A
230
A
140 220
670 1010
ns
nC
12
58
45
47
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„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF3710
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
Switching Test Circuit
Switching Waveforms
Same Type
as D.U.T.
50kΩ
12V
0.2μF
QG
VGS
0.3μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
RG
RD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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„
Power MOSFET
TYPICAL CHARACTERISTICS
Drian Current vs Gate Threshold Voltage
800
400
700
350
Drain Current,ID(uA)
Drain Current,ID(uA)
Drian Current vs
Drain Source Breakdown Voltage
600
500
400
300
200
300
250
200
150
100
100
50
0
0
160
0
40
80
120
140
Drain Source Breakdown Voltage,BVDS(V)
0
Drain - Source On-State Resistance
Characteristics
Drain Current. Source to Drain Voltage
10
25
8
20
6
15
4
10
2
5
0
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD(V)
5
1
2
3
4
Gate Threshold Voltage. VTH(V)
ID=28A
VGS=10V
0
100
200
300
400
500
Drain to Source Voltage VDS(mV)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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