Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF630
Power MOSFET
200V, 9A N-CHANNEL
POWER MOSFET

1
1
1
TO-220F1
TO-220F2
FEATURES
* RDS(ON) < 0.4Ω@ VGS = 10V, ID = 5A
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( CRSS = typical 80 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability

TO-220F
TO-220
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.

1
1
1
TO-262
TO-251
1
SYMBOL
TO-252

SOP-8
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF630L-TA3-T
UF630G-TA3-T
UF630L-TF1-T
UF630G-TF1-T
UF630L-TF2-T
UF630G-TF2-T
UF630L-TF3-T
UF630G-TF3-T
UF630L-TM3-T
UF630G-TM3-T
UF630L-TN3-R
UF630G-TN3-R
UF630L-T2Q-T
UF630G-T2Q-T
UF630G-S08-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-262
SOP-8
1
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6
S - - S - - S - - S - - S - - S - - S - - S G D D
7
D
Packing
8
Tube
Tube
Tube
Tube
Tube
- Tape Reel
Tube
D Tape Reel
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UF630

Power MOSFET
MARKING
TO-220 / TO-220F / TO-220F1
TO-220F2 / TO-252 / TO-262
UNISONIC TECHNOLOGIES CO., LTD
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SOP-8
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
Drain-Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C)
VDGR
200
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
9
A
Pulsed Drain Current (Note 2)
IDM
36
A
Single Pulse Avalanche Energy (Note 3)
EAS
150
mJ
TO-220/TO-262
73
TO-220F1/ TO-220F
38
Power Dissipation
PD
W
TO-220F2
42
TO-251/ TO-252
46
SOP-8
5
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-262
TO-220F1/ TO-220F
TO-220F2
Junction to Ambient
TO-251/ TO-252
SOP-8
TO-220/TO-262
TO-220F1/ TO-220F
Junction to Case
TO-220F2
TO-251/ TO-252
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
RATING
UNIT
62.5
θJA
θJC
°C/W
100.3
83
1.71
3.31
2.98
2.7
24
°C/W
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
Power MOSFET
ELECTRICAL SPECIFICATIONS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 1)
BVDSS
ID(ON)
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS > ID(ON) x RDS(ON)MAX,
VGS = 10V
VDS = Rated BVDSS, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 90V, ID≈9A, RGS = 9.1Ω,
Turn-On Rise Time
tR
VGS = 10V, RL = 9.6Ω
Turn-Off Delay Time
tD(OFF)
(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VGS = 10V, ID = 9A,
VDS = 0.8 x Rated BVDSS
Gate-Source Charge
QGS
IG(REF) = 1.5mA
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS = 9.0A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
IS = 9.0A, dIS/dt = 100A/μs
(Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%.
Notes: 2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP MAX UNIT
200
V
9
A
2
0.25
10
100
-100
μA
nA
nA
4
0.4
V
Ω
600
250
80
19
10
9
450
3
pF
pF
pF
30
50
50
40
30
ns
ns
ns
ns
nC
nC
nC
2
V
9
A
36
A
ns
μC
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
BVDSS
L
RG
VDS
VDD
IAS
VDD
D.U.T.
0
0.01Ω
tp
tAV
IAS
Fig1. Unclamped Energy Test Circuit
Fig.2 Unclamped Energy Waveforms
VDS
RL
10%
0
RG
VDD
VGS
90%
D.U.T.
90%
VGS
50%
10%
0
tD(ON)
tON
Fig.3 Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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tR
PULSE WIDTH
50%
tD(OFF) tF
tOFF
Fig.4 Resistive Switching Waveforms
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TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Power Dissipation, PD

Power MOSFET
Forward Bias Safe Operating Area
Normalized Transient Thermal Impedance
1.0
0.5
Drain Current, ID (A)
Normalized Transient Thermal
Impedance, ZθJC
100
0.2
PDM
0.1
0.1 0.05
t1
0.02
t2
0.01
0.01
10-5
Single pulse Duty Factor, D=t1/t2
Peak TJ =PDM×ZθJC RθJC +TC
10-4
10-3
10-2
10-1
1
1ms
10ms
Operation in This Area
May be Limited by RDS (ON)
1
100ms
DC
TC=25℃
TJ=Max Rated
1
Rectangular Pulse Duration, t1 (s)
10
100
1000
Drain to Source Voltage, VDS (V)
Drain Current, ID (A)
Drain Current, ID (A)
100μs
0.1
10
10μs
10
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Normalized Drain to Source Breakdown
Voltage
Normalized Drain to Source on Resistance
Drain to Source on Resistance, RDS (ON)
Drain Current, ID (A)

Gate to Source Voltage, VGS (V)
Source to Drain Current, ISD (A)
UF630
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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UF630
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)

Capacitance vs. Drain to Source Voltage
2000
Drain Current vs. Source to Drain Voltage
40
VGS = 0V, f = 1MHz
CISS = CGS + CGD, CDS
CRSS = CGD
COSS = CDS + CGD
1600
35
30
25
1200
20
800
15
CISS
400
0
10
5
COSS
0
CRSS
1
10
20
30
40
1
50
1
1.5
2
2.5
3
Source to Drain Voltage, VSD (V)
Drain to Source Voltage, VDS (V)
Drain Current, ID (A)
Drain Current, ID (μA)
0.5
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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