Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF634
Power MOSFET
ADVANCED POWER MOSFET

DESCRIPTION
The UTC UF634 is a N-channel Power MOSFET and it uses UTC
advanced technology to provide customers with lower RDS(ON),
improved gate charge and so on.

FEATURES
* RDS(ON)<0.45Ω @ VGS=10V, ID=8.1A
* Lower Input Capacitance
* Improved Gate Charge
* Lower Leakage Current: 10μA (MAX.) @ VDS = 250V
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Extended Safe Operating Area

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF634L-TA3-T
UF634G-TA3-T
UF634L-TF1-T
UF634G-TF1-T
UF634L-TF3-T
UF634G-TF3-T
UF634L-TN3-R
UF634G-TN3-R
UF634G-S08-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F
TO-252
SOP-8
1
G
G
G
G
S
2
D
D
D
D
S
Pin Assignment
3 4 5 6
S - - S - - S - - S - - S G D D
7
D
Packing
8
Tube
Tube
Tube
- Tape Reel
D Tape Reel
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QW-R502-454.F
UF634

Power MOSFET
MARKING
TO-220 / TO-220F / TO-220F1
TO-220F2 / TO-252 / TO-262
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SOP-8
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QW-R502-454.F
UF634

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-to-Source Voltage
VGS
± 30
V
Drain-to-Source Voltage
VDSS
250
V
Continuous Drain Current
TC=25°C
ID
8.1
A
Drain Current-Pulsed (Note 2)
IDM
32.4
A
Avalanche Current (Note 2)
IAR
8.1
A
Single Pulsed Avalanche Energy (Note 3)
EAS
205
mJ
Repetitive Avalanche Energy (Note 2)
EAR
7.4
mJ
TO-220
74
W
TO-220F/TO-220F1
38
W
Power Dissipation
PD
TO-252
50
W
SOP-8
5
W
Operating Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
3. L=6.24mH, IAS=8.1A, VDD=50V, RG=27 Ω, Starting TJ =25°C

THERMAL RESISTANCE
PARAMETER
TO-220/TO-220F1
TO-220F
Junction to Ambient
TO-252
SOP-8
TO-220
TO-220F/TO-220F1
Junction to Case
TO-252
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°C/W
110
83
1.69
3.29
2.5
24
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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QW-R502-454.F
UF634

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=250V
Gate- Source Leakage Current
IGSS
VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=8.1A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=200V, ID=8.1A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=125V, ID=8.1A, RG=12Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=8.1A, VGS=0V, TJ=25°C
(Note 2)
Maximum Body-Diode Continuous Current
IS
Pulsed-Source Current (Note 1)
ISM
Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤2%.
3. Essentially Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
250
V
10
µA
±100 nA
2.0
4.0
0.45
V
Ω
730 950
110 130
50
60
pF
pF
pF
30
40
5.8
13.5
13
40
14
40
53 120
21
50
nC
nC
nC
ns
ns
ns
ns
1.5
V
8.1
32.4
A
A
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UF634
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF634

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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UF634

Power MOSFET
TYPICAL CHARACTERISTICS
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QW-R502-454.F
UF634
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Capacitance vs. Drain-Source Voltage
100
VGS=0V
250μs
Pulse Test
20
Capacitance (pF)
Reverse Drain Current, IDR (A)
Source- Drain Diode Forward Voltage
10
8
125°C
25°C
COSS
500
250
2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
CISS
750
CISS=CGS+CGD
(CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
0
1.6
Source-Drain Voltage, VSD (V)
CRSS
VGS=0V
f = 1MHz
10-1
100
101
Drain Current, ID (A)
Drain-Source On-Resistance, RDS(ON)
(Normalized) (Ω)
Gate-Source Voltage, VGS (V)
Drain-Source Breakdown Voltage,
BVDSS, (Normalized) (V)
Drain-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-454.F
UF634

Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Thermal Response
Max. Drain Current vs. Case Temperature
20
Thermal Response, θJC (t)
Drain Current, ID (A)
D=0.5
15
10
5
100
θJC (t) = 3.13°C/W Max.
Duty Factor, D=t1/t2
TJM-TC=PDM×θJC (t)
0.2
0.1
5
0.0
2
0.0
10-1
1
0.0
PDM
t1
Single pulse
t2
0.0
25
50
75
100
125
150
Case Temperature, TC (°C)
-5
10
-4
10
-3
10
-2
10
-1
10
100
101
Square Wave Pulse Duration, t1 (sec)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-454.F
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