Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF8010
Power MOSFET
80A, 100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UF8010 uses advanced technology to provide excellent
RDS(ON), fast switching speed, low gate charge, and excellent
efficiency. This device is suitable for high frequency DC-DC
converters, UPS and motor control.

FEATURES
* RDS(ON) :12mΩ (Typ.)
* Lower gate-drain charge for lower switching losses
* Perfect avalanche voltage and current performance
* Fully characterized capacitance including effective COSS to simplify
design

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UF8010L-TA3-T
UF8010G-TA3-T
TO-220
UF8010L-TF3-T
UF8010G-TF3-T
TO-220F
UF8010L-TQ2-T
UF8010G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
1 of 8
QW-R502-348.E
UF8010

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-348.E
UF8010

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
VGS
±20
V
Continuous Drain Current (VGS=10V,TC=25°C)
ID
80 (Note 2)
A
Pulsed Drain Current
IDM
320
A
Single Pulse (Note 2)
EAS
310
mJ
Avalanche Energy
26
mJ
Repetitive
EAR
Avalanche Current
IAR
45
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
16
V/ns
TO-220 / TO-263
260
W
Power Dissipation(TC=25°C)
TO-220F
54
W
PD
TO-220 / TO-263
1.8
W/°C
Derating above 25°C
0.36
W/°C
TO-220F
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ + 150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ = 25°C, L = 0.31mH, RG =25Ω, IAS = 45A.
3. ISD≤45A, di/dt≤110A/μs, VDD≤BVDSS, TJ≤ 150°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220 / TO-263
Junction to Case
TO-220F
SYMBOL
θJA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJC
RATINGS
62.5
0.57
2.3
UNIT
°C/W
°C/W
°C/W
3 of 8
QW-R502-348.E
UF8010

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250μA
Drain-Source Leakage Current
IDSS
VDS=100V,VGS =0V
Gate-Source Forward Current
VGS = 20 V
IGSS
Gate-Source Reverse Current
VGS = -20 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 45A (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25 V,VGS =0V, f =1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=80V, VGS=10V
Gate-Source Charge
QGS
ID= 80A (Note 1)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
VDS =30V,ID = 1A, RG = 39Ω
Rise Time
tR
VGS = 10V (Note 1)
Turn-Off Delay Time
tD(OFF)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
IS
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current (Note 1)
IS=80 A ,VGS =0 V,
Drain-Source Diode Forward Voltage
VSD
TJ = 25°C (Note 1)
Reverse Recovery Time
tRR
IF=80A, VDD=50V, TJ = 150°C
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
MIN
TYP MAX UNIT
100
2.0
12
20
200
-200
V
μA
nA
nA
4.0
15
V
mΩ
3617
620
59
399
41
96
174
370
757
392
99
460
pF
pF
pF
450
200
450
850
450
nC
nC
nC
ns
ns
ns
ns
80
A
320
A
1.3
V
150
700
ns
nC
Note: Pulse width ≤ 300μs; duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-348.E
UF8010

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-348.E
UF8010

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
6 of 8
QW-R502-348.E
UF8010

Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-348.E
UF8010

Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-348.E
Similar pages