Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT40N03
Power MOSFET
40 Amps, 30 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
The UT40N03 power MOSFET provide the designer with the
best combination of fast switching,ruggedized device design, low
on-resistance and cost-effectiveness
„
FEATURES
* RDS(ON) = 17mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT40N03L-TN3-R
UT40N03G-TN3-R
UT40N03L-TM3-T
UT40N03G-TM3-T
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-252
TO-251
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
1 of 5
QW-R502-160.C
UT40N03
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
RATINGS
UNIT
30
V
±20
V
40
A
169
A
TO-251
50
W
Total Power Dissipation
PD
W
TO-252
50
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
SYMBOL
VDSS
VGSS
ID
IDM
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
TO-251
TO-252
TO-251
TO-252
θJA
θJC
RATINGS
62
62
2.5
2.5
UNIT
℃/W
℃/W
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
Drain-Source On-State Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250 µA
VDS =30 V, VGS =0 V, TJ=25℃
VGS = ±20V
30
VGS(TH)
VDS =VGS, ID =250 µA
VGS =10 V, ID =20 A
VGS=4.5 V, ID =16 A
1
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25 V, VGS =0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDS =15 V, ID=20 A, VGS =10V,
RG =3.3 Ω, RL =0.75 Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS =24V,VGS =5 V,ID =20 A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
TJ=25℃, IS=40A, VGS=0V
Maximum Continuous Drain-Source
IS
VD=VG=0V , VS=1.3V
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
1
±100
14
20
3
17
23
800
380
133
V
µA
nA
V
mΩ
pF
7.2
60
22.5
10
17
3
10
ns
nC
1.3
V
40
A
169
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QW-R502-160.C
UT40N03
Power MOSFET
TYPICAL CHARACTERISTICS
„
Typical Output Characteristics
TC=25℃
VG=10V
TC=150℃
VG=8.0V
VG=6.0V
100
VG=4.0V
50
100
VG=6.0V
50
VG=4.0V
VG=3.0V
VG=3.0V
0
0
0
1
2
3
4
5
7 8
6
Drain-to-Source Voltage,VDS (V)
0
9
On-Resistance vs. Gate Voltage
28
1.8
Normalized On-Resistance,RDS(ON)
ID=20A
TC=25℃
26
On-Resistance,RDS(ON) (mΩ)
VG=10V
VG=8.0V
Drain Current,ID (A)
150
Drain Current,ID (A)
Typical Output Characteristics
150
24
22
20
18
16
14
12
4
5
6
7
8
9
10
Gate-to-Source Voltage,VGS (V)
11
2 3 4 5 6 7 8 9 10
Drain-to-Source Voltage,VDS (V)
Normalized On-Resistance vs.
Junction Temperature
ID=20A
VG=10V
1.4
1.2
1
0.8
0.6
-50
0
50
100
Junction Temperature,TJ (℃)
150
Power,PD (W)
Drain Current,ID (A)
3
1.6
1
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www.unisonic.com.tw
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QW-R502-160.C
UT40N03
TYPICAL CHARACTERISTICS(Cont.)
Reverse Drain Current,IS (A)
100
Forward Characteristics of Reverse Diode
10
1
TJ=150℃
TJ=25℃
0.1
Gate Threshold Voltage vs. Junction
Temperature
2
1
0
-50
0.3 0.5 0.7 0.9 1.1 1.3 1.5
Body Diode Forward Voltage,VSD (V)
0
100
50
Junction Temperature,TJ (℃)
150
Drain Current,ID (A)
Normalized Thermal Response,RthJC
Capacitance,C (pF)
Gate to Source Voltage,VGS (V)
0.01
0.1
3
Gate Threshold Voltage,VGS(TH) (V)
„
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-160.C
UT40N03
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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QW-R502-160.C
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