Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT60N03
Power MOSFET
30V, 60A N-CHANNEL LOGIC
LEVEL MOSFET
1

DESCRIPTION
TO-220
This device employs advanced MOSFET technology and features
low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the
overall efficiency of DC/DC converters and allows operation to higher
switching frequencies.

1
1
1
TO-252
FEATURES
TO-251
TO-252D
* RDS(ON) < 23mΩ @ VGS=10V, ID=30A
* RDS(ON) < 30mΩ @ VGS=4.5V, ID=19A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT60N03L-TA3-T
UT60N03G-TA3-T
UT60N03L-TM3-T
UT60N03G-TM3-T
UT60N03L-TN3-R
UT60N03G-TN3-R
UT60N03L-TND-R
UT60N03G-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-251
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tape Reel
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UT60N03

Power MOSFET
MARKING
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (VGS=10V)
ID
60
A
TO-220
60
Power Dissipation
W
TO-251/TO-252
45
PD
TO-220
0.4
W/°C
Derate above 25°C
TO-251/TO-252
0.37
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
TO-220
Junction to Ambient
TO-251/TO-252
TO-220
Junction to Case
TO-251/TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATINGS
62.5
100
2.5
2.73
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=25V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
VGS=4.5V, ID=19A
1
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VDS=15V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Time
t(ON)
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=15V, ID=7.9A, RL=18Ω, VGS=4.5V
Turn-OFF Time
t(OFF)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Turn-ON Time
t(ON)
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=15V, ID=7.9A, RL=18Ω, VGS=10V
Turn-OFF Time
t(OFF)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
5V
VGS=0V~5V,VDD=15V,ID=19A IG=1.0mA
Total Gate Charge
QG
10V
VGS=0V~10V,VDD=15V,ID=19A,IG=1.0mA
Threshold Gate Charge
QG(TH) VGS=0V~1V,VDD=15V,ID=19A IG=1.0mA
Gate-Source Charge
QGS
VDD=15V, ID=19A IG=1.0mA
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
ISD=19A
Drain-Source Diode Forward Voltage
VSD
ISD=10A
Reverse Recovery Time
trr
ISD=9A, dIS/dt =100A/s,
Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP MAX UNIT
1
±100
14
24
3
23
30
900
210
90
V
mΩ
pF
pF
pF
90
11
49
83
27
28
48
6
26
120
52
28
18
9.6
1.0
3.4
3.4
V
µA
nA
28
14
1.5
1.25
1.0
58
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Switching Time Waveforms
12
10
VDS
8
90%
6
4
VGS
10%
tD(ON)
2
tD(OFF)
tTHL
tTLH
0
0
400
600
200
800
Source to Drain Voltage,VSD (mV)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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