Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT85N03
Power MOSFET
85 Amps, 30 Volts
N-CHANNEL POWER MOSFET

DESCRIPTION
The UT85N03 uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suited for all low voltage applications.

FEATURES
* RDS(ON)<6 mΩ @VGS=10V
* RDS(ON)<10mΩ @VGS=4.5V
* Low Reverse Transfer Capacitance ( CRSS = Typical: 380 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT85N03L-TA3-T
UT85N03G-TA3-T
UT85N03L-TN3-T
UT85N03G-TN3-T
UT85N03L-TN3-R
UT85N03G-TN3-R
UT85N03L-TQ2-T
UT85N03G-TQ2-T
UT85N03L-TQ2-R
UT85N03G-TQ2-R
UT85N03L-TN3-T
Package
TO-220
TO-252
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tube
Tape Reel
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2)Package Type
(2) TA3: TO-220, TN3: TO-252, TQ2: TO-263
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-292.D
UT85N03

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
ID
85
A
Pulsed Drain Current
IDM
350
A
TO-220/TO-263
83
Total Power Dissipation
PD
W
TO-252
56
Junction Temperature
TJ
+75
°C
Strong Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
TO-220/TO-263
Junction to Ambient
TO-252
TO-220/TO-263
Junction to Case
TO-252

SYMBOL
RATINGS
62.5
110
1.8
2.7
θJA
θJC
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
BVDSS
TEST CONDITIONS
VGS=0V, ID=250µA
30
∆BVDSS/ ∆TJ ID=1mA, Reference to 25°C
IDSS
IGSS
VDS=30V, VGS=0V
VDS=0V, VGS= ±20V
VGS(TH)
VDS=VGS, ID=250µA
VGS=10V, ID=45A
VGS=4.5V, ID=30A
VDS=10V, ID=30A
RDS(ON)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note)
QG
VDS=24V, VGS=4.5V, ID=30A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time (Note)
tD(ON)
Turn-ON Rise Time
tR
VGS=10V, VDS=15V, RD=0.5Ω,
RG=3.3Ω, ID=30A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS =45A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=30A, VGS=0V, dIS/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
Note: Pulse width≦300μs, Duty cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
V
0.018
1
V/°C
1
±100
µA
nA
3
6
10
V
32
mΩ
S
2700 4200
550
380
pF
pF
pF
240
35
78
52
100
460
280
300
nC
nC
nC
ns
ns
ns
ns
1.3
V
ns
nC
28
10
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QW-R502-292.D
UT85N03
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-292.D
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