MICROSEMI APTM20TDUM16PG

APTM20TDUM16PG
Triple dual common source
MOSFET Power Module
D3
G3
G5
S3
S1
S5
S1/S2
S3/S4
S5/S6
S2
S4
S6
G2
G4
G6
D2
D4
D1
D6
D3
G1
S1/S2
D2
S1
D5
G3
S3/S4
S3
G5
S5/S6
S5
S2
S4
S6
G2
G4
G6
D4
D6
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
104
77
416
±30
19
390
104
50
3000
Unit
V
A
V
mΩ
W
A
July, 2006
G1
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
D5
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–8
APTM20TDUM16PG – Rev 1
D1
VDSS = 200V
RDSon = 16mΩ typ @ Tj = 25°C
ID = 104A @ Tc = 25°C
APTM20TDUM16PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Min
VGS = 10V, ID = 52A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VSD
dv/dt
trr
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS
16
3
Min
VGS = 10V
VBus = 100V
ID =104A
Typ
7220
2330
146
140
Unit
Max
Unit
µA
mΩ
V
nA
pF
nC
67
32
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 104A
R G = 5Ω
64
116
849
µJ
929
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 104A, R G = 5Ω
Test Conditions
ns
88
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 104A, R G = 5Ω
936
µJ
986
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 104A
IS = - 104A
VR = 133V
diS/dt = 100A/µs
Max
250
1000
19
5
±100
53
Source - Drain diode ratings and characteristics
Symbol
Typ
Tj = 25°C
Tj = 125°C
Max
104
77
1.3
5
Unit
A
Tj = 25°C
360
V
V/ns
ns
Tj = 25°C
6.7
µC
www.microsemi.com
July, 2006
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 104A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
2–8
APTM20TDUM16PG – Rev 1
Symbol
APTM20TDUM16PG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
3
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
Typ
Max
0.32
150
125
100
5
250
Unit
°C/W
V
°C
N.m
g
SP6-P Package outline (dimensions in mm)
5 places (3:1)
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3–8
APTM20TDUM16PG – Rev 1
July, 2006
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTM20TDUM16PG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
V GS=15V
600
10V
500
9V
400
8.5V
300
8V
7.5V
200
7V
100
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
250
200
150
100
TJ=25°C
50
T J=125°C
6.5V
0
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
1.2
Normalized to
V GS=10V @ 52A
1.1
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
120
RDS(on) vs Drain Current
ID, DC Drain Current (A)
VGS=10V
1
VGS=20V
0.9
0.8
100
80
60
40
20
0
0
25
50
75
100
125
150
ID, Drain Current (A)
25
50
75
100
125
150
July, 2006
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
TC, Case Temperature (°C)
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4–8
APTM20TDUM16PG – Rev 1
ID, Drain Current (A)
Transfert Characteristics
300
ID, Drain Current (A)
700
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 52A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
0.6
limited by
RDSon
100
100µs
1ms
10
Single pulse
TJ=150°C
TC=25°C
10ms
100ms
1
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
I D=104A
V DS=40V
12
TJ =25°C
VDS=100V
10
8
VDS=160V
6
4
2
0
0
20
40
60
80 100 120 140 160
Gate Charge (nC)
July, 2006
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
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5–8
APTM20TDUM16PG – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20TDUM16PG
APTM20TDUM16PG
Delay Times vs Current
Rise and Fall times vs Current
160
120
VDS=133V
RG=5Ω
T J=125°C
L=100µH
60
40
120
tr and tf (ns)
t d(on) and td(off) (ns)
t d(off)
80
t d(on)
100
80
tr
60
20
0
0
0
25
50 75 100 125 150 175
I D, Drain Current (A)
0
25
50 75 100 125 150 175
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
2
VDS=133V
RG=5Ω
T J=125°C
L=100µH
Switching Energy (mJ)
1.5
Eoff
Eon
1
0.5
Eoff
0
VDS=133V
ID=104A
T J=125°C
L=100µH
2.5
2
Eoff
1.5
Eon
1
0.5
0
25
50
75
100 125 150 175
0
I D, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
150
VDS=133V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
100
50
ZVS
Hard
switching
0
25
38
50
63
75
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
250
200
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
300
Frequency (kHz)
tf
40
20
Eon and Eoff (mJ)
V DS=133V
R G=5Ω
T J=125°C
L=100µH
140
100
88
100
I D, Drain Current (A)
1000
100
TJ =150°C
TJ =25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6–8
APTM20TDUM16PG – Rev 1
July, 2006
VSD, Source to Drain Voltage (V)
www.microsemi.com
7–8
APTM20TDUM16PG – Rev 1
July, 2006
APTM20TDUM16PG
APTM20TDUM16PG
Microsemi reserves the right to change, without notice, the specifications and information contained herein
www.microsemi.com
8–8
APTM20TDUM16PG – Rev 1
July, 2006
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.