Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMT20303H
Rev. 0, 12/2015
3--Bit Digital Step Attenuator
The MMT20303H is an integrated 3--bit digital step attenuator with a 1 dB
step size. It is controlled via a 3--bit parallel interface and operates from a 3 to 5 V
supply. The MMT20303H is suitable for 3G/4G small cell transmitter and mobile
radio applications using frequencies from 50 to 4000 MHz.
MMT20303HT1
Features
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50–4000 MHz, 3 Bit
1 dB LSB
Frequency: 50–4000 MHz
Maximum RF Input Power: 30 dBm (CW)
Typical IIP3 > 50 dBm
Programmable Attenuator with 7 dB Maximum Range, 1 dB Step Size
Low Insertion Loss
0.1 dB Typical Bit Error
Excellent Consistency over Temperature and Supply Voltage
Single 3 to 5 V Supply
50 Ohm Operation
P1dB Independent of Control Voltage
3--bit Digital Control
TTL/CMOS Interface Compatible
Cost--effective 16--pin, 3 mm QFN Surface Mount Plastic Package
QFN 3  3
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Symbol
250
MHz
900
MHz
4000
MHz
Unit
IL
–0.6
–0.7
–1.3
dB
Insertion Loss
Attenuation Accuracy (Worst Case State)
—
+0.1, –0.1
+0.1, 0
+0.1, –0.1
dB
Third Order Intercept Input Point (2)
IIP3
47
54
52
dBm
Power Input @ 1 dB Compression
P1dB
30
35 (3)
35 (3)
dBm
1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specific frequency.
2. Two--tone input power = +13 dBm each tone.
3. Operate within specified maximum rating.
VDD
b2
b1
b0
RFin
RFout
2 dB
1 dB
4 dB
Figure 1. Functional Block Diagram
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMT20303HT1
1
Table 2. Maximum Ratings
Rating
Supply Voltage
Symbol
Value
Unit
VDD
6
V
RF Input Power
Pin
30
dBm
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +85
C
Junction Temperature
TJ
175
C
Table 3. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Insertion Loss 1 (50–900 MHz)
IL1
—
0.6
1.0
dB
Insertion Loss 2 (1000–2500 MHz)
IL2
—
0.8
—
dB
Insertion Loss 3 (2500–4000 MHz)
IL3
—
1.2
—
dB
Input Return Loss (S11)
IRL
—
20
—
dB
Output Return Loss (S22)
ORL
—
20
—
dB
R
—
7
—
dB
R
—
1
—
dB
—
—
0.1
0.25
dB
Turn--on Time
ton
—
60
—
ns
Turn--off Time
toff
—
100
—
ns
Power Output @ 1dB Compression
P1dB
—
35
—
dBm
Third Order Input Intercept Point @ 5 V
IIP35
—
50
—
dBm
Third Order Input Intercept Point @ 3 V
Attenuation Control Maximum Range
Attenuation Step
Attenuation Accuracy
IIP33
—
50
—
dBm
Max Input Voltage Logic Low @ 100 A, 3 V
VIL
—
—
0.8
V
Min Input Voltage Logic High @ 100 A, 3 V
VIH
2.3
—
—
V
IDD
—
2
3
mA
Supply Current @ 5 V
Table 4. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 5. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
Table 6. Ordering Information
Device
MMT20303HT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
Package
QFN 3  3
MMT20303HT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Functional Pin Description
Pin Number
Pin Function
1, 3, 4, 5, 8,
9, 10, 12
N.C.
No Connection
Pin Description
VDD
16
b2
b1
b0
15
14
13
2
RFin
RF Input
N.C.
1
12
N.C.
6, 7
ACG (1)
AC Ground
RFin
2
11
11
RFout
RF Output
RFout
13
b0
Attenuator Bit 0 (active low)
N.C.
3
10 N.C.
14
b1
Attenuator Bit 1 (active low)
N.C.
4
9
15
b2
Attenuator Bit 2 (active low)
16
VDD
5
Supply Voltage
6
7
N.C.
8
N.C. ACG1 ACG2 N.C.
1. AC ground connection for operation below 700 MHz.
(Top View)
Note: Exposed backside of the package is DC and
RF ground. N.C. can be connected to GND.
Figure 2. Pin Connections
Table 8. Logic Truth Table
State
Attenuation
(dB)
H
111
0
H
011
1
L
H
101
2
L
H
001
3
H
H
L
110
4
L
H
L
010
5
H
L
L
100
6
L
L
L
000
7
b2
b1
b0
H
H
L
H
H
L
MMT20303HT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM APPLICATION CIRCUIT: 50–4000 MHz, 5 VOLT OPERATION
VDD
VCTL
R1
C4
16
b1
b2
b0
15
14
13
1
12
RF
INPUT
RF
OUTPUT
2
11
C1
C2
3
10
4
9
5
6
7
8
C3
Figure 3. MMT20303HT1 Test Circuit Schematic
Table 9. MMT20303HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C4
0.1 F Chip Capacitors
GRM155R61A104KA01D
Murata
C3
3300 pF Chip Capacitor
GRM1557U1A332JA01D
Murata
J1, J2, J3
3--pin Header
22--28--8360
Molex
R1
1000 , 1/16 W Chip Resistor
RC0402FR--071KL
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M60818
MTL
MMT20303HT1
4
RF Device Data
Freescale Semiconductor, Inc.
VCTL
VDD
50 OHM APPLICATION CIRCUIT: 50–4000 MHz, 5 VOLT OPERATION
R1
b2
b1
J2
J1
b0
J3
Com
RFIN
RFOUT
C4
C1
C2
C3
QFN 33 16A
Rev. 1
PCB actual size: 1.25  1.62.
Figure 4. MMT20303HT1 Test Circuit Component Layout
Table 9. MMT20303HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C4
0.1 F Chip Capacitors
GRM155R61A104KA01D
Murata
C3
3300 pF Chip Capacitor
GRM1557U1A332JA01D
Murata
J1, J2, J3
3--pin Header
22--28--8360
Molex
R1
1000 , 1/16 W Chip Resistor
RC0402FR--071KL
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M60818
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMT20303HT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM APPLICATION CIRCUIT: 50–4000 MHz, 5 VOLT OPERATION
180
–0.4
135
INSERTION PHASE ()
INSERTION LOSS (dB)
–0.6
–0.8
–40C
–1
25C
–1.2
85C
–1.4
0
45
0
–45
–90
–135
VDD = 5 Vdc
–1.6
90
1000
2000
f, FREQUENCY (MHz)
3000
Figure 5. Insertion Loss versus Frequency
versus Temperature
4000
–180
VDD = 5 Vdc
0
1000
2000
f, FREQUENCY (MHz)
3000
4000
Figure 6. Insertion Phase versus Frequency
versus Temperature (–40C, 25C, 85C)
MMT20303HT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 50–4000 MHz, 5 VOLT OPERATION
–10
–10
–15
–15 State = 111
State = 111
–20
S22 (dB)
S11 (dB)
State = 000
State = 000
–20
–25
State = 101
–30
State = 110
State = 101
–25
–30
State = 011
State = 011
–35
–40
VDD = 5 Vdc
0
1000
–35
State = 110
VDD = 5 Vdc
2000
f, FREQUENCY (MHz)
3000
4000
–40
1000
0
2000
3000
4000
f, FREQUENCY (MHz)
Figure 7. S11 versus Frequency
Figure 8. S22 versus Frequency
1
State = 111
0
State = 011
ATTENUATION (dB)
–1
State = 101
–2
–3
State = 110
–4
–5
–6
State = 000
–7
–8
VDD = 5 Vdc
0
1000
2000
f, FREQUENCY (MHz)
3000
4000
Attenuation Error Due to Temperature
Major Setting
Temperature
Range
Attenuation due
to Temperature
0 dB
–40C to 85C
0 dB
1 dB
0.08 dB
2 dB
0.08 dB
4 dB
0.08 dB
7 dB
0.20 dB
Figure 9. Attenuation versus Frequency
MMT20303HT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM APPLICATION CIRCUIT: 50–4000 MHz, 5 VOLT OPERATION
62
6
5
State = 110
60
3
2
IIP3 (dBm)
PHASE SHIFT ()
4
State = 000
1
State = 111
0
–1
–3
VDD = 5 Vdc
0
1000
State = 011
2000
3000
58
State = 111
56
54
State = 101
–2
State = 000
4000
VDD = 5 Vdc
52
900
1350
f, FREQUENCY (MHz)
1800
2250
2700
f, FREQUENCY (MHz)
Figure 10. Phase Shift versus Frequency
Figure 11. IIP3 versus Frequency
3150
3600
35
INPUT P0.1dB
34
33
32
State = 111
31
VDD = 5 Vdc
30
500
1000
2000
2500
1500
f, FREQUENCY (MHz)
3000
3500
Figure 12. Input P0.1dB versus Frequency
MMT20303HT1
8
RF Device Data
Freescale Semiconductor, Inc.
3.0  3.0
0.70
0.30
2.00
3.40
x
0.50
1.6  1.6 solder pad with
thermal via structure. All
dimensions in mm.
Figure 13. PCB Pad Layout for QFN 3  3, 16 Lead
MT01
WLYW
Figure 14. Product Marking
MMT20303HT1
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MMT20303HT1
10
RF Device Data
Freescale Semiconductor, Inc.
MMT20303HT1
RF Device Data
Freescale Semiconductor, Inc.
11
MMT20303HT1
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2015
Description
 Initial release of data sheet
MMT20303HT1
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2015 Freescale Semiconductor, Inc.
MMT20303HT1
14
Document Number: MMT20303H
Rev. 0, 12/2015
RF Device Data
Freescale Semiconductor, Inc.
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