Data Sheet

BF1108; BF1108R
Silicon RF switches
Rev. 04 — 29 May 2008
Product data sheet
1. Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
n Various RF switching applications such as:
u Passive loop through for VCR tuner
u Transceiver switching
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Lins(on)
on-state insertion loss RS = RL = 50 Ω; f ≤ 1 GHz;
VSK = VDK = 0 V; IF = 0 mA
ISLoff
off-state isolation
RDSon
VGS(p)
[1]
Min
Typ
Max
Unit
-
-
2
dB
RS = RL = 50 Ω; f ≤ 1 GHz;
VSK = VDK = 5 V; IF = 1 mA
30
-
-
dB
drain-source on-state
resistance
VKS = 0 V; ID = 1 mA
-
12
20
Ω
gate-source pinch-off
voltage
VDS = 1 V; ID = 20 µA
-
−3
−4
V
IF = diode forward current.
Conditions
[1]
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BF1108 (SOT143B)
1
FET gate; diode anode
2
diode cathode
3
source
[1]
4
drain
[1]
4
1
3
4
2
1
3
2
001aai042
BF1108R (SOT143R)
1
FET gate; diode anode
2
diode cathode
3
source
[1]
4
drain
[1]
3
2
3
4
2
1
4
1
001aai043
[1]
Drain and source are interchangeable.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BF1108
-
plastic surface-mounted package; 4 leads
SOT143B
BF1108R
-
plastic surface-mounted package; reverse pinning;
4 leads
SOT143R
4. Marking
Table 4.
Marking
Type number
Marking code
BF1108
NGp
BF1108R
NHp
BF1108_BF1108R_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 29 May 2008
2 of 10
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
FET
VDS
drain-source voltage
-
3
V
VSD
source-drain voltage
-
3
V
VDG
drain-gate voltage
-
7
V
VSG
source-gate voltage
-
7
V
ID
drain current
-
10
mA
VR
reverse voltage
-
35
V
IF
forward current
-
100
mA
Diode
FET and diode
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
[1]
Thermal characteristics
Parameter
Conditions
[1]
thermal resistance from junction
to solder point
Typ
Unit
250
K/W
Soldering point of FET gate and diode anode lead.
7. Static characteristics
Table 7.
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS = 0 V; IGS = 0.1 mA
7
-
-
V
FET
V(BR)GSS gate-source breakdown
voltage
VGS(p)
gate-source pinch-off voltage
VDS = 1 V; ID = 20 µA
-
−3
−4
V
IDSX
drain cut-off current
VGS = −5 V; VDS = 2 V
-
-
10
µA
IGSS
gate leakage current
VGS = −5 V; VDS = 0 V
-
-
100
nA
RDSon
drain-source on-state
resistance
VGS = 0 V; ID = 1 mA
-
12
20
Ω
VF
forward voltage
IF = 10 mA
-
-
1
V
IR
reverse current
VR = 25 V
-
-
50
nA
VR = 20 V; Tamb = 75 °C
-
-
1
µA
Diode
BF1108_BF1108R_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 29 May 2008
3 of 10
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
8. Dynamic characteristics
Table 8.
Dynamic characteristics
Common cathode; Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
RS = RL = 50 Ω; f ≤ 1 GHz
-
-
2
dB
RS = RL = 50 Ω; f = 1 GHz
-
1.3
-
dB
RS = RL = 75 Ω; f ≤ 1 GHz
-
-
3
dB
RS = RL = 50 Ω; f ≤ 1 GHz
30
-
-
dB
RS = RL = 50 Ω; f = 1 GHz
-
38
-
dB
RS = RL = 75 Ω; f ≤ 1 GHz
30
-
-
dB
-
12
20
Ω
-
1
-
pF
-
0.65
0.9
pF
VSK = VDK = 5 V; IF = 1 mA
-
1
-
pF
VSK = VDK = 0 V; IF = 0 mA
-
0.65
0.9
pF
-
1.1
-
pF
-
-
0.7
Ω
FET and diode
Lins(on)
ISLoff
on-state insertion loss
off-state isolation
VSK = VDK = 0 V; IF = 0 mA
[1]
VSK = VDK = 5 V; IF = 1 mA
RDSon
drain-source on-state
resistance
VKS = 0 V; ID = 1 mA
Ci
input capacitance
f = 1 MHz
[2]
VSK = VDK = 5 V; IF = 1 mA
VSK = VDK = 0 V; IF = 0 mA
output capacitance
Co
f = 1 MHz
[2]
Diode
Cd
rD
diode capacitance
diode forward resistance
f = 1 MHz; VR = 0 V
IF = 2 mA; f = 100 MHz
[1]
IF = diode forward current.
[2]
Ci is the series connection of CGS and CGK; Co is the series connection of CGD and CGK.
[3]
Guaranteed on AQL basis; inspection level S4, AQL 1.0.
BF1108_BF1108R_4
Product data sheet
[3]
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 29 May 2008
4 of 10
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
mgs357
0
mgs358
0
Lins(on)
ISLoff
−1
−20
−2
−40
−3
−4
0
400
800
f (MHz)
−60
1200
0
400
800
f (MHz)
1200
VSK = VDK = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode
forward current).
VSK = VDK = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode
forward current).
Measured in test circuit see Figure 3.
Measured in test circuit see Figure 3.
Fig 1. On-state insertion loss as a function of
frequency; typical values
Fig 2. Off-state isolation as a function of frequency;
typical values
V
1 nF
100 kΩ
47 kΩ
BF1108/BF1108R
50 Ω
input
1 nF
1 nF
50 Ω
output
4.7 kΩ
100 kΩ
V
1 nF
mbl028
On-state: V = 0 V.
Off-state: V = 5 V.
Fig 3. Test circuit
BF1108_BF1108R_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 29 May 2008
5 of 10
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
9. Package outline
Plastic surface-mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
mm
1.1
0.9
OUTLINE
VERSION
A1
max
bp
b1
c
D
E
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
e
1.9
e1
HE
Lp
Q
v
w
y
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
04-11-16
06-03-16
SOT143B
Fig 4.
EUROPEAN
PROJECTION
Package outline SOT143B
BF1108_BF1108R_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 29 May 2008
6 of 10
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
SOT143R
Fig 5.
JEDEC
JEITA
SC-61AA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-16
06-03-16
Package outline SOT143R
BF1108_BF1108R_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 29 May 2008
7 of 10
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
AQL
Acceptable Quality Level
MOSFET
Metal-Oxide Semiconductor Field-Effect Transistor
RF
Radio Frequency
S4
Special inspection level 4
VCR
VideoCassette Recorder
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
BF1108_BF1108R_4
20080529
Product data sheet
-
Modifications:
BF1108_1108R_3
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Symbol notation has been adapted to comply with the current guidelines of NXP
Semiconductors.
BF1108_1108R_3
(9397 750 06477)
19991118
Product data sheet
-
BF1108_1108R_2
BF1108_1108R_2
(9397 750 06073)
19990819
Product data sheet
-
BF1108_1108R_1
BF1108_1108R_1
(9397 750 05899)
19990517
Preliminary specification
-
-
BF1108_BF1108R_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 29 May 2008
8 of 10
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BF1108_BF1108R_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 29 May 2008
9 of 10
BF1108; BF1108R
NXP Semiconductors
Silicon RF switches
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 May 2008
Document identifier: BF1108_BF1108R_4
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