Data Sheet

BFG10; BFG10/X
NPN 2 GHz RF power transistor
Rev. 05 — 22 November 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
FEATURES
BFG10; BFG10/X
PINNING
• High power gain
PIN
• High efficiency
DESCRIPTION
BFG10 (see Fig.1)
• Small size discrete power amplifier
1
collector
• 1.9 GHz operating area
2
base
• Gold metallization ensures
excellent reliability.
3
emitter
4
emitter
handbook, 2 columns
4
1
1
collector
• Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
2
emitter
3
base
4
emitter
DESCRIPTION
2
Top view
BFG10/X (see Fig.1)
APPLICATIONS
3
MSB014
Fig.1 SOT143.
MARKING
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
TYPE NUMBER
CODE
BFG10
%MS
BFG10/X
%MT
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 8
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
1.9
3.6
200
≥5
≥50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
250
mA
IC(AV)
average collector current
−
250
mA
Ptot
total power dissipation
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
up to Ts = 60 °C; see Fig.2; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
Rev. 05 - 22 November 2007
2 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
Rth j-s
VALUE
UNIT
290
K/W
up to Ts = 60 °C; note 1;
Ptot = 400 mW
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
20
MAX.
−
UNIT
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 5 mA
8
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5
−
V
ICES
collector leakage current
VCE = 5 V; VBE = 0
−
100
µA
hFE
DC current gain
IC = 50 mA; VCE = 5 V
25
−
Cc
collector capacitance
IE = ie = 0; VCB = 3.6 V; f = 1 MHz
−
3
pF
Cre
feedback capacitance
IC = 0; VCE = 3.6 V; f = 1 MHz
−
2
pF
MLC818
500
handbook, halfpage
MLC819
2.0
handbook, halfpage
P tot
(mW)
Cc
(pF)
400
1.5
300
1.0
200
0.5
100
0
0
0
50
100
150
o
200
0
2
Ts ( C)
4
6
8
10
V CB (V)
IC = 0; f = 1 MHz.
Fig.3
Fig.2
Power derating curve
Rev. 05 - 22 November 2007
Collector capacitance as a function of
collector-base voltage; typical values.
3 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL
(mW)
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
1
200
Gp
(dB)
ηc
(%)
>5
>50
typ. 7
typ. 60
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MLC820
10
handbook, halfpage
Gp
(dB)
8
ηc
MLC821
100
ηc
(%)
500
handbook, halfpage
PL
(mW)
80
400
60
300
4
40
200
2
20
100
Gp
6
0
0
100
200
300
0
400
500
P L (mW)
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
Fig.4
0
0
50
100
PD (mW)
150
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
Power gain and efficiency as functions
of load power; typical values.
Fig.5
Rev. 05 - 22 November 2007
Load power as a function of drive
power; typical values.
4 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
SPICE parameters for the BFG10 crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
2.714
fA
2
BF
102.8
−
3
NF
0.998
−
4
VAF
28.12
V
5
IKF
6.009
A
6
ISE
403.2
pA
7
NE
2.937
−
8
BR
31.01
−
9
NR
0.999
−
10
VAR
2.889
V
11
IKR
0.284
A
12
ISC
1.487
fA
13
NC
1.100
−
14
RB
3.500
Ω
15
IRB
1.000
µA
16
RBM
3.500
Ω
17
RE
0.217
Ω
18
RC
0.196
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
5.125
pF
23
VJE
0.600
V
24
MJE
0.367
−
25
TF
12.07
ps
C cb
handbook, halfpage
L1
LB
B
L2
B'
C be
C'
E'
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 100 MHz.
Fig.6 Package equivalent circuit SOT143.
List of components (see Fig.6)
DESIGNATION
VALUE
UNIT
Cbe
84
fF
Ccb
17
fF
Cce
191
fF
L1
0.12
nH
L2
0.21
nH
0.06
nH
26
XTF
99.40
−
L3
27
VTF
7.220
V
LB
0.95
nH
28
ITF
3.950
A
LE
0.40
nH
29
PTF
0.000
deg
30
CJC
2.327
pF
31
VJC
0.668
V
32
MJC
0.398
−
33
XCJC
0.160
−
34(1)
TR
0.000
ns
35(1)
CJS
0.000
F
36(1)
VJS
750.0
mV
37(1)
MJS
0.000
−
38
FC
0.652
−
Note
1. These parameters have not been extracted,
the default values are shown.
Rev. 05 - 22 November 2007
5 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
Test circuit information
handbook, full pagewidth
V bias
R2
VS
R1
T1
,,
,,
,,
,,
,,
,,,,
C12
,,,
,
,
,,,,
L10
C14, C15,
C16
L9
L7
C11
C10
L8
50 Ω
input
L2
C1
C13
L6
DUT
L1
C2, C3,
C4, C5
L4
L3
L5
C6, C7,
C8
50 Ω
output
C9
MLC822
Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz.
Rev. 05 - 22 November 2007
6 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
List of components used in test circuit (see Fig.7)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C9, C10, C11
multilayer ceramic chip capacitor; note 1
24 pF
C2, C3, C4, C5,
C6, C7
multilayer ceramic chip capacitor; note 1
0.86 pF
C8
multilayer ceramic chip capacitor; note 1
1.1 pF
C12, C13
electrolytic capacitor
470 µF; 10 V
C14, C15, C16
multilayer ceramic chip capacitor; note 1
10 nF
L1
stripline; note 2
length 28.5 mm
width 0.93 mm
L2
stripline; note 2
length 2.3 mm
width 0.93 mm
L3
stripline; note 2
length 3.1 mm
width 0.93 mm
L4
stripline; note 2
length 3.3 mm
width 0.93 mm
L5
stripline; note 2
length 16.3 mm
width 0.93 mm
L6
stripline; note 2
length 10 mm
width 0.93 mm
L7
stripline; note 2
length 4.4 mm
width 0.4 mm
L8
stripline; note 2
length 19.3 mm
width 0.93 mm
L9
stripline; note 2
length 19.7 mm
width 0.4 mm
L10
micro choke
T1
BD228
R1
metal film resistor
20 Ω; 0.4 W
2322 157 10209
R2
metal film resistor
530 Ω; 0.4 W
2322 157 15301
2222 031 34471
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6).
Rev. 05 - 22 November 2007
7 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
handbook, full pagewidth
60
Collector
Base
70
V bias
R2
T1
R1
L10
C12
L9
C15
C14
C11
C13
VS
C16
L8
L7
C10
C3 C4
C5
L6
C6
C2
C1
L5
L1
Base
L2 L3
L4 C7 C8 Collector
C9
MLC823
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
Rev. 05 - 22 November 2007
8 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
PACKAGE OUTLINE
handbook, full pagewidth
0.75
0.60
3.0
2.8
0.150
0.090
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
1.4
1.2
2.5
max
o
10
max
1
1.1
max
o
30
max
0.88
2
0
0.1
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
Rev. 05 - 22 November 2007
9 of 11
BFG10; BFG10/X
NXP Semiconductors
NPN 2 GHz RF power transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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reliable. However, NXP Semiconductors does not give any representations or
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Applications — Applications that are described herein for any of these
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specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
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Contact information
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For sales office addresses, send an email to: [email protected]
Rev. 05 - 22 November 2007
10 of 11
BFG10; BFG10/X
NXP Semiconductors
NPN 2 GHz RF power transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG10X_N_5
20071122
Product data sheet
-
BFG10X_4
•
Modifications:
Marking table on page 2; changed code
BFG10X_4
19950831
Product specification
-
BFG10X_3
BFG10X_3
19950307
-
-
BFG10X_2
BFG10X_2
-
-
-
BFG10X_1
BFG10X_1
-
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 November 2007
Document identifier: BFG10X_N_5
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